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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQS166ELNW-T1_GE3

Name: SQS166ELNW-T1_GE3
Brand: Vishay Siliconix
SKU: SQS166ELNW-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQS166ELNW-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: SQS166ELNW-T1_GE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 60V (D-S)

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Product details

Overview

SQS166ELNW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 60 V MOSFET in PowerPAK® 1212-8SLW package, delivering R_DS(on) = 0.0089 Ω at V_GS = 10 V and 71 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency power switch in 48 V mild-hybrid DC/DC converters and motor control stages.

For engineers reviewing the SQS166ELNW-T1_GE3 datasheet, SQS166ELNW-T1_GE3 pinout, SQS166ELNW-T1_GE3 application, or SQS166ELNW-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, wettable flank terminals for automated optical inspection, 175 °C junction rating, and low R_DS(on) with thermal resistance R_thJC = 1.64 °C/W.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology optimized for low conduction loss and fast switching in high-current automotive power stages. Its gate charge profile (Q_g = 21–32 nC, Q_gd = 4 nC) supports efficient operation in synchronous buck topologies up to 500 kHz.

The device integrates a robust body diode with t_rr = 35–70 ns and Q_rr = 22–44 nC, enabling reliable reverse recovery in bidirectional energy transfer circuits such as regenerative braking interfaces and active clamp converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports 48 V nominal bus systems with 20 % overvoltage margin per ISO 7637-2.
R_DS(on) @ 10 V	0.0089 Ω - Enables <1 W conduction loss at 33 A RMS in typical 48 V/1 kW DC/DC stage.
I_D (cont.) @ 25 °C	71 A - Sustains peak load currents in electric power steering (EPS) motor drivers without derating.
T_J max	+175 °C - Qualified for under-hood applications including engine control modules and battery disconnect units.
R_thJC	1.64 °C/W - Allows direct thermal coupling to heatsink or copper pour for compact 0.75 mm profile PCB layouts.
AEC-Q101	Qualified - Meets stress test requirements for automotive electronics per JESD22-A108 and JESD22-A110.
Wettable flanks	Yes - Enables automated solder joint inspection (AOI) on bottom-side terminals without X-ray.

Pinout & Package

PowerPAK® 1212-8SLW: 3.3 mm × 3.3 mm × 0.75 mm profile, exposed drain pad on bottom, wettable flank side terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (all sides)	Drain (D)	Eight parallel drain terminals connect directly to internal die drain metallization; provide low-inductance, high-current path and thermal conduction to PCB copper.
Terminal G (top center)	Gate (G)	Single top-side gate pad enables standard pick-and-place and controlled gate drive routing with minimal loop inductance.
Terminal S (top edge)	Source (S)	Top-side source terminal simplifies Kelvin sensing and reduces source inductance in high-di/dt switching paths.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 22 % lower R_DS(on) vs. prior generation at same die size, reducing conduction loss in space-constrained EPS modules.
100 % R_g and UIS tested	Ensures gate robustness against ESD and ruggedness against unclamped inductive switching events in motor drive fault conditions.
Low-profile 0.75 mm height	Enables stacking of dual-sided power stages in ultra-thin 48 V battery management system (BMS) modules.
175 °C rated junction	Supports operation in engine bay environments where ambient exceeds 125 °C without thermal shutdown.
Wettable flank terminals	Permits full-spectrum AOI coverage of solder fillets on all eight side terminals, eliminating manual inspection in high-volume automotive assembly.

Applications

Electric Power Steering (EPS)	48 V Mild-Hybrid DC/DC Converter
Use Scenario: High-current H-bridge driving 3-phase brushless motor in column-assist EPS module. IC Role / Device Role / Timing Role: Low-side and high-side synchronous rectifier switch in three-phase inverter stage. Use Value: 0.0089 Ω R_DS(on) minimizes I²R loss during peak assist torque (≥100 A burst), extending battery range by 1.2 % per cycle.	Use Scenario: Primary-side synchronous rectifier in 48 V-to-12 V bi-directional buck-boost converter for vehicle electrical architecture. IC Role / Device Role / Timing Role: Main power switch handling 50 A continuous current with 500 kHz PWM switching. Use Value: Low Q_gd/Q_g ratio (≈0.19) reduces switching loss and improves light-load efficiency above 94 % at 25 % duty cycle.
Engine Control Unit (ECU) Load Switch	Battery Disconnect Unit (BDU)
Use Scenario: High-side load switch controlling fuel pump, injector drivers, or turbocharger actuators in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Single-pole, normally-open power switch with integrated overtemperature protection interface. Use Value: AEC-Q101 qualification and 175 °C T_J rating ensure reliable operation at exhaust manifold proximity (T_amb ≥ 140 °C).	Use Scenario: Isolation switch between high-voltage traction battery and 48 V auxiliary system during crash or service disconnect. IC Role / Device Role / Timing Role: Fail-safe mechanical bypass replacement with fast turn-off (<30 ns fall time) and avalanche energy rating (E_AS = 18 mJ). Use Value: Single-pulse avalanche capability withstands 19 A inductive kick from contactor coil de-energization without failure.

Electric Power Steering (EPS)

48 V Mild-Hybrid DC/DC Converter

Use Scenario: High-current H-bridge driving 3-phase brushless motor in column-assist EPS module.

IC Role / Device Role / Timing Role: Low-side and high-side synchronous rectifier switch in three-phase inverter stage.

Use Value: 0.0089 Ω R_DS(on) minimizes I²R loss during peak assist torque (≥100 A burst), extending battery range by 1.2 % per cycle.

Use Scenario: Primary-side synchronous rectifier in 48 V-to-12 V bi-directional buck-boost converter for vehicle electrical architecture.

IC Role / Device Role / Timing Role: Main power switch handling 50 A continuous current with 500 kHz PWM switching.

Use Value: Low Q_gd/Q_g ratio (≈0.19) reduces switching loss and improves light-load efficiency above 94 % at 25 % duty cycle.

Engine Control Unit (ECU) Load Switch

Battery Disconnect Unit (BDU)

Use Scenario: High-side load switch controlling fuel pump, injector drivers, or turbocharger actuators in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Single-pole, normally-open power switch with integrated overtemperature protection interface.

Use Value: AEC-Q101 qualification and 175 °C T_J rating ensure reliable operation at exhaust manifold proximity (T_amb ≥ 140 °C).

Use Scenario: Isolation switch between high-voltage traction battery and 48 V auxiliary system during crash or service disconnect.

IC Role / Device Role / Timing Role: Fail-safe mechanical bypass replacement with fast turn-off (<30 ns fall time) and avalanche energy rating (E_AS = 18 mJ).

Use Value: Single-pulse avalanche capability withstands 19 A inductive kick from contactor coil de-energization without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 0.004 Ω @ 10 V but only rated to 150 °C; no wettable flanks; TO-220AB package.	Lacks AEC-Q101 qualification and automotive thermal rating; unsuitable for under-hood mounting.	Select only for non-automotive industrial DC/DC where footprint and AOI are not constraints.
STL220N6F7AG	R_DS(on) = 0.0055 Ω @ 10 V; PowerFLAT™ 5x6 package; AEC-Q101 qualified; 175 °C rated.	Smaller 5 mm × 6 mm footprint but higher R_thJA (60 °C/W); no wettable flanks.	Prefer when board area is critical and AOI is not required; verify thermal performance with 1"² FR4 copper.

Compared with IRL1404ZPBF and STL220N6F7AG, SQS166ELNW-T1_GE3 uniquely combines AEC-Q101 qualification, 175 °C rating, wettable flanks, and PowerPAK® 1212-8SLW's 1.64 °C/W R_thJC, making it optimal for thermally dense, optically inspectable automotive power stages.

Availability

SQS166ELNW-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild-hybrid DC/DC converters, and battery disconnect units requiring stable component supply across automotive production lifecycles.

Supply support for SQS166ELNW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQS166ELNW-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET product line, engineered specifically for high-reliability, high-current switching in 48 V vehicle architectures and engine bay environments.

FAQ

What is the maximum continuous drain current rating for SQS166ELNW-T1_GE3 at 125 °C case temperature?

The SQS166ELNW-T1_GE3 supports 41 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® 1212-8SLW package and ensures safe operation in high-ambient under-hood locations. The 71 A rating applies only at T_C = 25 °C.

Does SQS166ELNW-T1_GE3 have a qualified AEC-Q101 status, and what tests does that include?

Yes, SQS166ELNW-T1_GE3 is AEC-Q101 qualified. This includes stress testing per JESD22-A108 (temperature cycling), JESD22-A110 (highly accelerated stress test), and JESD22-A111 (autoclave), plus 100 % R_g and UIS screening. The qualification confirms suitability for automotive power electronics where reliability under thermal, mechanical, and electrical stress is mandatory.

What is the gate-source threshold voltage range for SQS166ELNW-T1_GE3, and how does it affect drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SQS166ELNW-T1_GE3 is 1.5 V to 2.5 V at T_J = 25 °C. This low threshold enables logic-level drive compatibility with 3.3 V microcontrollers, but requires careful gate driver selection to avoid partial turn-on during noise transients. A minimum 4.5 V gate drive is recommended to achieve full R_DS(on) specification.

How does the wettable flank feature of SQS166ELNW-T1_GE3 improve manufacturing yield in automotive PCB assembly?

The wettable flank terminals on SQS166ELNW-T1_GE3 expose solderable metal along all eight side edges of the PowerPAK® 1212-8SLW package, enabling full optical inspection (AOI) of solder fillet formation without X-ray. This eliminates manual visual checks and increases first-pass yield in high-volume automotive SMT lines where zero-defect standards apply.

What is the single-pulse avalanche energy rating for SQS166ELNW-T1_GE3, and in which failure modes is it relevant?

The SQS166ELNW-T1_GE3 has a single-pulse avalanche energy rating (E_AS) of 18 mJ at I_AS = 19 A and L = 0.1 mH. This rating protects against inductive energy dissipation during fault events such as short-circuit turn-off in motor drives or contactor coil de-energization in battery disconnect units-scenarios where the device must absorb stored magnetic energy without destruction.

SQS166ELNW-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 71A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1790 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 91W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerPAK® 1212-8SLW

SQS166ELNW-T1_GE3 FAQ

1.How can I place an order for SQS166ELNW-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQS166ELNW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQS166ELNW-T1_GE3 reliable?

The price and inventory of SQS166ELNW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS166ELNW-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQS166ELNW-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS166ELNW-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQS166ELNW-T1_GE3?

SQS166ELNW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQS166ELNW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQS166ELNW-T1_GE3?

For technical support, including SQS166ELNW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS166ELNW-T1_GE3 requirements.

6.How does Aetrix verify that SQS166ELNW-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQS166ELNW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS166ELNW-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQS166ELNW-T1_GE3?

All SQS166ELNW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS166ELNW-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQS166ELNW-T1_GE3 part is unused and in its original packaging.

Return procedure for SQS166ELNW-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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