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Vishay Siliconix SQS180ENW-T1_GE3
- Part No.:
- SQS180ENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8SLW
- Datasheet:
-
SQS180ENW-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 80 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:2,481
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Product details
Overview
SQS180ENW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET rated for 80 V drain-source voltage, 72 A continuous drain current at TC = 25 °C, and 0.00867 Ω RDS(on) at VGS = 10 V and ID = 10 A. It features wettable flank terminals, AEC-Q101 qualification, and a low-profile PowerPAK® 1212-8SLW package optimized for high-current motor control and DC-DC conversion in under-hood automotive systems.
For engineers reviewing the SQS180ENW-T1_GE3 datasheet, SQS180ENW-T1_GE3 pinout, SQS180ENW-T1_GE3 application, or SQS180ENW-T1_GE3 equivalent, key selection criteria include its 175 °C junction temperature rating, 1.26 °C/W junction-to-case thermal resistance, 100 % Rg and UIS testing, and compatibility with automated optical inspection (AOI) due to wettable flanks.
Technical Context
This MOSFET employs trench-based silicon architecture delivering low on-resistance and fast switching with 37 nC typical total gate charge and 15 ns turn-on delay. Its dynamic parameters-including 2208 pF typical input capacitance and 26 pF reverse transfer capacitance-are optimized for high-frequency synchronous buck converters and BLDC motor gate drive stages.
The device integrates a robust body diode with 35 ns typical reverse recovery time and 52 nC reverse recovery charge, enabling efficient freewheeling in inductive loads. Thermal design is supported by a 0.75 mm profile and validated junction-to-ambient resistance of 54 °C/W on 1"² FR4 PCB.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection and high-side switching |
| RDS(on) @ VGS = 10 V | 0.00867 Ω - Enables <1 W conduction loss at 33 A, critical for thermally constrained engine control units |
| ID (continuous) | 72 A @ TC = 25 °C - Supports high-current solenoid drivers and EPS motor phases without forced cooling |
| TJ max | +175 °C - Rated for under-hood operation in ambient temperatures up to +125 °C with derating |
| Qg (total) | 37 nC typical - Reduces gate driver power demand and enables use with low-power MCU GPIOs via buffer stage |
| RthJC | 1.26 °C/W - Allows direct thermal coupling to heatsink or copper pour for >90 W power dissipation capability |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics including HTGB, HTRB, and UHAST |
Pinout & Package
Package: PowerPAK® 1212-8SLW - 3.3 mm × 3.3 mm × 0.75 mm low-profile surface-mount package with wettable flank terminals for AOI-compatible solder joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications |
| 5, 6, 7, 8 | Drain (D) | Four exposed drain pads on bottom side provide primary thermal path to PCB copper and mechanical anchoring |
| G | Gate (G) | Single top-side gate pad compatible with standard SMT reflow; low 0.9 Ω typical gate resistance minimizes ringing |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 15 % lower RDS(on) vs. prior generation while maintaining avalanche ruggedness (EAS = 42 mJ) |
| Wettable flank terminals | Enables automated optical inspection of solder fillets on all four side edges-critical for zero-defect automotive manufacturing |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness per AEC-Q101 |
| Low thermal resistance | RthJC = 1.26 °C/W supports >90 W continuous power dissipation when mounted on ≥2 oz. copper thermal pad |
| 175 °C operation | Extended junction temperature range allows full-rated performance in engine bay environments without derating |
Applications
| Engine Control Unit (ECU) | Electric Power Steering (EPS) |
|---|---|
Use Scenario: High-side switch for fuel injector driver circuit operating at 12 V nominal with 80 V load dump transients. IC Role / Device Role / Timing Role: Primary power switch controlling precise 1–2 ms injection pulses with fast turn-off to prevent dribble. Use Value: 80 V VDS rating withstands ISO 7637-2 Pulse 5a; 0.00867 Ω RDS(on) limits self-heating during repetitive pulsing. |
Use Scenario: Low-side phase switch in 3-phase BLDC motor inverter for 12 V EPS system. IC Role / Device Role / Timing Role: Power stage transistor handling up to 72 A peak phase current with PWM switching at 20 kHz. Use Value: 37 nC Qg enables efficient gate driving with integrated half-bridge ICs; wettable flanks ensure solder joint reliability under vibration. |
| DC-DC Converter (48 V–12 V) | Transmission Control Module (TCM) |
Use Scenario: Synchronous rectifier in high-efficiency bidirectional buck-boost converter for 48 V mild hybrid architectures. IC Role / Device Role / Timing Role: Secondary-side switch conducting continuous 50+ A with <100 ns dead-time constraints. Use Value: 35 ns trr and 52 nC Qrr minimize reverse recovery losses; 175 °C rating sustains operation during sustained boost mode. |
Use Scenario: Solenoid actuator driver for hydraulic pressure control valves in automatic transmissions. IC Role / Device Role / Timing Role: High-current switch energizing 12 V solenoids with 200 ms dwell time and rapid de-energization. Use Value: 205 A pulsed drain current (IDM) handles inrush; 100 % UIS tested ensures survival during inductive kickback events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1807ZPBF | Higher RDS(on) (0.0095 Ω), TO-220AB package, no wettable flanks, non-AEC-Q101 | Limited to non-automotive industrial power supplies; lacks AOI support and high-temp qualification | Select only for cost-sensitive non-automotive designs where thermal profile permits larger footprint |
| STL220N6F7 | 60 V rating, 220 A ID, PowerFLAT™ 5x6 package, AEC-Q101 qualified | Better suited for 48 V systems requiring higher current; insufficient for 80 V load dump compliance | Choose for 48 V traction inverters but not for 12/24 V automotive main battery switching |
Compared with IRF1807ZPBF and STL220N6F7, the SQS180ENW-T1_GE3 uniquely combines 80 V rating, AEC-Q101 qualification, wettable flanks, and 0.00867 Ω RDS(on) in a 3.3 mm × 3.3 mm footprint-making it the only option meeting full ISO 16750-2 load dump and IATF 16949 process requirements for compact under-hood modules.
Availability
SQS180ENW-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, 48 V–12 V DC-DC converters, and transmission control modules requiring stable component supply across automotive production lifecycles.
Supply support for SQS180ENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS180ENW-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in engine bay and chassis control modules.
FAQ
What is the maximum junction temperature rating for SQS180ENW-T1_GE3?
The SQS180ENW-T1_GE3 has a maximum operating junction temperature of +175 °C, verified per AEC-Q101 stress testing. This rating enables reliable operation in under-hood environments where ambient temperatures reach +125 °C, provided thermal design maintains TJ ≤ 175 °C using the specified RthJC = 1.26 °C/W path. The SQS180ENW-T1_GE3 datasheet confirms this limit applies across the full voltage and current operating range.
Is SQS180ENW-T1_GE3 qualified to AEC-Q101 standards?
Yes, the SQS180ENW-T1_GE3 is fully AEC-Q101 qualified, with documentation confirming completion of high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), and unclamped inductive switching (UIS) tests. All units undergo 100 % Rg and UIS screening per the qualification protocol. The SQS180ENW-T1_GE3 meets the failure rate and defect detection requirements for automotive safety-critical applications.
What does "wettable flank terminals" mean for SQS180ENW-T1_GE3?
Wettable flank terminals on the SQS180ENW-T1_GE3 refer to solderable vertical sidewalls on all four edges of the PowerPAK® 1212-8SLW package. These enable automated optical inspection (AOI) of solder fillet formation during reflow, a requirement for zero-defect automotive manufacturing. The SQS180ENW-T1_GE3's flank geometry is optimized for IPC-A-610 Class 3 acceptance without mandating post-solder X-ray verification.
What is the typical total gate charge (Qg) of SQS180ENW-T1_GE3 and why does it matter?
The SQS180ENW-T1_GE3 has a typical total gate charge of 37 nC at VGS = 10 V, VDS = 40 V, and ID = 4 A. This value directly determines gate driver power consumption and switching speed: lower Qg reduces driver losses and enables faster turn-on/turn-off transitions. For the SQS180ENW-T1_GE3, 37 nC supports efficient 20 kHz PWM in EPS inverters while minimizing gate driver thermal load.
Can SQS180ENW-T1_GE3 replace older Vishay SQ series MOSFETs in existing designs?
The SQS180ENW-T1_GE3 is not a direct pin-to-pin replacement for earlier SQ series devices like SQ4940E due to differences in PowerPAK® 1212-8SLW terminal layout and thermal pad configuration. While electrical specs are improved, board-level validation-including solder joint integrity, thermal performance, and EMI behavior-is required before substitution. The SQS180ENW-T1_GE3 requires review against the original design's layout and thermal model.
SQS180ENW-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® GenIV
- Package/Case:
- PowerPAK® 1212-8SLW
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8.67mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 56 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3092 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 119W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerPAK® 1212-8SLW
SQS180ENW-T1_GE3 FAQ
1.How can I place an order for SQS180ENW-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS180ENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS180ENW-T1_GE3 reliable?
The price and inventory of SQS180ENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS180ENW-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS180ENW-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS180ENW-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS180ENW-T1_GE3?
SQS180ENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS180ENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS180ENW-T1_GE3?
For technical support, including SQS180ENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS180ENW-T1_GE3 requirements.
6.How does Aetrix verify that SQS180ENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS180ENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS180ENW-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS180ENW-T1_GE3?
All SQS180ENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS180ENW-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS180ENW-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS180ENW-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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