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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQS401EN-T1_GE3

Name: SQS401EN-T1_GE3
Brand: Vishay Siliconix
SKU: SQS401EN-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQS401EN-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SQS401EN-T1_GE3.pdf

Description:: MOSFET P-CH 40V 16A PPAK1212-8

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Product details

Overview

SQS401EN-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET designed for high-efficiency DC-DC conversion and load switching in engine control units, body electronics, and ADAS power rails. It delivers -40 V V_DS, 0.029 Ω R_DS(on) at -10 V V_GS, and -16 A continuous drain current in a PowerPAK® 1212-8 package, operating up to +175 °C junction temperature.

For engineers reviewing the SQS401EN-T1_GE3 datasheet, SQS401EN-T1_GE3 pinout, SQS401EN-T1_GE3 application, or SQS401EN-T1_GE3 equivalent, this page provides verified thermal resistance (R_thJC = 2.4 °C/W), AEC-Q101 qualification status, gate charge (Q_g = 17.7–21.2 nC), avalanche energy rating (E_AS = 33.8 mJ), and PowerPAK 1212-8 land pattern guidance for thermal optimization.

Technical Context

This device uses TrenchFET® technology to achieve low on-resistance and fast switching with controlled gate charge distribution. Its -40 V rating and -2.0 V typical V_GS(th) support robust gate drive compatibility with standard 3.3 V and 5 V microcontrollers in high-side switch configurations.

The PowerPAK 1212-8 package features exposed drain pads on both top and bottom surfaces, enabling dual-sided thermal conduction and delivering R_thJA = 81 °C/W (PCB mount) and R_thJC = 2.4 °C/W - over 8× better than TSSOP-8 - critical for under-hood automotive thermal management.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Supports 24 V automotive systems with 2× safety margin against load dump transients
R_DS(on) @ -10 V	0.029 Ω max - Enables <1 W conduction loss at -12 A, reducing thermal stress in compact modules
I_D continuous	-16 A @ T_C = 25 °C - Sustains full rated current without derating when mounted on ≥1"² FR4 PCB
E_AS	33.8 mJ - Withstands single-pulse inductive energy from solenoid/relay turn-off without failure
R_thJC	2.4 °C/W - Allows direct thermal coupling to heatsink or copper pour, limiting ΔT_J-C to <39 °C at 16 W dissipation
Q_g	17.7–21.2 nC - Enables efficient 100–500 kHz PWM operation with <1 μs total switching time using 1 Ω gate driver
AEC-Q101	Qualified - Validated for automotive applications including engine bay, transmission control, and chassis modules

Pinout & Package

PowerPAK® 1212-8 is a leadless, surface-mount package measuring 3.3 mm × 3.3 mm × 1.05 mm with exposed drain terminals on both top and bottom surfaces. Its ultra-low profile and dual-sided thermal path optimize board space and thermal performance in space-constrained automotive modules.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7, 8	Drain (D)	Seven parallel drain terminals - collectively handle full -16 A current and provide primary thermal conduction path to PCB
4	Gate (G)	Single gate input - requires ≤±20 V drive; low 2.1 Ω typical gate resistance enables stable high-frequency switching
- (bottom pad)	Source (S)	Exposed source pad on underside - forms low-inductance return path and contributes to R_thJA = 81 °C/W rating

Key Features

Feature	Design Value
TrenchFET® process	Delivers 30 % lower R_DS(on) vs. planar P-channel MOSFETs of same die size, improving power density in 12 V/24 V systems
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures in relay/solenoid drivers
Exposed top/bottom drain	Enables simultaneous top-side heatsinking and bottom-side PCB copper conduction - reduces total thermal resistance by >40 % vs. SO-8
175 °C operation	Rated for continuous use in engine compartment environments where ambient exceeds 125 °C - no derating required up to T_J = 175 °C
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile - supports automated assembly without solder joint reliability risk

Applications

Engine Control Unit (ECU) Power Switching	Automotive Body Control Module (BCM)
Use Scenario: High-side switching of fuel injector drivers and ignition coil pre-drivers in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch with fast turn-on/turn-off (<50 ns combined delay + rise/fall) to meet ISO 16750 transient immunity requirements. Use Value: 33.8 mJ E_AS rating prevents failure during inductive kickback; -175 °C T_J rating ensures reliability across cold-cranking (-40 °C) to full-load hot idle (+150 °C).	Use Scenario: Reverse polarity protection and battery disconnect in BCM power distribution networks. IC Role / Device Role / Timing Role: Low-R_DS(on) P-channel switch placed between battery and downstream 12 V rail, activated only during fault conditions. Use Value: 0.029 Ω R_DS(on) limits voltage drop to <350 mV at 12 A - preserves system voltage during cranking while minimizing self-heating.
Advanced Driver Assistance Systems (ADAS)	Electric Power Steering (EPS) Motor Control
Use Scenario: Power sequencing and enable control for radar sensor modules and camera ECU power supplies. IC Role / Device Role / Timing Role: High-side switch managing 5 V/3.3 V auxiliary rails with precise timing via MCU GPIO, requiring minimal gate drive current. Use Value: -2.0 V V_GS(th) ensures full enhancement with 3.3 V logic; Q_g = 17.7 nC allows clean 100 ns switching edges without overshoot.	Use Scenario: Pre-driver stage for H-bridge motor control in EPS systems, handling regenerative braking current paths. IC Role / Device Role / Timing Role: Synchronous rectifier in half-bridge configuration, conducting reverse current during motor freewheeling. Use Value: -0.8 V typical V_SD forward voltage minimizes conduction loss during body-diode conduction; AEC-Q101 qualification validates lifetime under 10,000+ thermal cycles.

Engine Control Unit (ECU) Power Switching

Automotive Body Control Module (BCM)

Use Scenario: High-side switching of fuel injector drivers and ignition coil pre-drivers in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch with fast turn-on/turn-off (<50 ns combined delay + rise/fall) to meet ISO 16750 transient immunity requirements.

Use Value: 33.8 mJ E_AS rating prevents failure during inductive kickback; -175 °C T_J rating ensures reliability across cold-cranking (-40 °C) to full-load hot idle (+150 °C).

Use Scenario: Reverse polarity protection and battery disconnect in BCM power distribution networks.

IC Role / Device Role / Timing Role: Low-R_DS(on) P-channel switch placed between battery and downstream 12 V rail, activated only during fault conditions.

Use Value: 0.029 Ω R_DS(on) limits voltage drop to <350 mV at 12 A - preserves system voltage during cranking while minimizing self-heating.

Advanced Driver Assistance Systems (ADAS)

Electric Power Steering (EPS) Motor Control

Use Scenario: Power sequencing and enable control for radar sensor modules and camera ECU power supplies.

IC Role / Device Role / Timing Role: High-side switch managing 5 V/3.3 V auxiliary rails with precise timing via MCU GPIO, requiring minimal gate drive current.

Use Value: -2.0 V V_GS(th) ensures full enhancement with 3.3 V logic; Q_g = 17.7 nC allows clean 100 ns switching edges without overshoot.

Use Scenario: Pre-driver stage for H-bridge motor control in EPS systems, handling regenerative braking current paths.

IC Role / Device Role / Timing Role: Synchronous rectifier in half-bridge configuration, conducting reverse current during motor freewheeling.

Use Value: -0.8 V typical V_SD forward voltage minimizes conduction loss during body-diode conduction; AEC-Q101 qualification validates lifetime under 10,000+ thermal cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPBF	TO-220 package, -100 V V_DS, 0.3 Ω R_DS(on), no AEC-Q101 qualification	Used in industrial power supplies; unsuitable for automotive due to larger footprint and lack of automotive qualification	Select only for non-automotive, cost-sensitive designs where thermal performance and space constraints are secondary
DMTH4007LPSQ-13	PowerDI 5060 package, -40 V V_DS, 0.032 Ω R_DS(on), AEC-Q101 qualified, R_thJC = 3.0 °C/W	Similar automotive use cases but with higher thermal resistance and slightly higher on-resistance	Preferred when legacy PowerDI footprint compatibility is required; accept ~25 % higher junction temperature rise at same power

Compared with IRF9530NPBF and DMTH4007LPSQ-13, SQS401EN-T1_GE3 offers the lowest R_thJC (2.4 °C/W) and tightest R_DS(on) (0.029 Ω), enabling higher current density in compact automotive modules without forced cooling or oversized PCB copper.

Availability

SQS401EN-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control, ADAS sensor powering, and electric power steering systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SQS401EN-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQS401EN-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® P-channel MOSFET family, engineered specifically for high-temperature, high-reliability load switching in engine bay and chassis control applications.

FAQ

What is the maximum junction temperature rating for SQS401EN-T1_GE3?

The SQS401EN-T1_GE3 is rated for continuous operation up to +175 °C junction temperature, validated per AEC-Q101 stress testing. This enables deployment in under-hood automotive locations such as engine control units and transmission control modules where ambient temperatures exceed 125 °C. The device maintains specified R_DS(on) and switching parameters across the full -55 °C to +175 °C range.

Does SQS401EN-T1_GE3 require a heatsink in typical automotive applications?

SQS401EN-T1_GE3 does not require an external heatsink when mounted on a 1"² FR4 PCB with 2 oz. copper on both sides - its R_thJA = 81 °C/W ensures junction temperature remains within limits at ≤12 A continuous current. For higher currents or smaller PCB copper areas, thermal vias under the drain pad and extended copper pours are recommended instead of discrete heatsinks.

Is SQS401EN-T1_GE3 pin-compatible with other PowerPAK 1212-8 P-channel MOSFETs?

Yes, SQS401EN-T1_GE3 shares the standard PowerPAK 1212-8 single configuration pinout (pins 1–3,5–8 = Drain; pin 4 = Gate; bottom pad = Source) with all Vishay P-channel devices in this package, including SQS402EN and SQS403EN. This enables layout reuse across voltage/current variants without redesigning the footprint or routing.

What gate drive voltage is required to fully enhance SQS401EN-T1_GE3?

SQS401EN-T1_GE3 achieves its specified R_DS(on) of 0.029 Ω at V_GS = -10 V, but it fully enhances at V_GS ≤ -4.5 V (R_DS(on) = 0.047 Ω max). Its -2.0 V typical threshold voltage allows reliable turn-on with standard 3.3 V or 5 V microcontroller outputs when used in high-side configurations with appropriate level-shifting or charge pump circuitry.

How is avalanche ruggedness validated for SQS401EN-T1_GE3?

SQS401EN-T1_GE3 undergoes 100 % unclamped inductive switching (UIS) testing per JEDEC JESD24-11, with a guaranteed single-pulse avalanche energy rating of 33.8 mJ at T_J = 25 °C. This validation ensures robustness against inductive kickback from solenoids, relays, and motors in automotive power distribution - a key requirement for AEC-Q101 qualification.

SQS401EN-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 29mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21.2 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1875 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SQS401EN-T1_GE3 FAQ

1.How can I place an order for SQS401EN-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQS401EN-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQS401EN-T1_GE3 reliable?

The price and inventory of SQS401EN-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS401EN-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQS401EN-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS401EN-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQS401EN-T1_GE3?

SQS401EN-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQS401EN-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQS401EN-T1_GE3?

For technical support, including SQS401EN-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS401EN-T1_GE3 requirements.

6.How does Aetrix verify that SQS401EN-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQS401EN-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS401EN-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQS401EN-T1_GE3?

All SQS401EN-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS401EN-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQS401EN-T1_GE3 part is unused and in its original packaging.

Return procedure for SQS401EN-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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