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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQS401ENW-T1_GE3

Name: SQS401ENW-T1_GE3
Brand: Vishay Siliconix
SKU: SQS401ENW-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQS401ENW-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8W

Datasheet:: SQS401ENW-T1_GE3.pdf

Description:: MOSFET P-CH 40V 16A PPAK1212-8

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Product details

Overview

SQS401ENW-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET designed for high-side load switching in 12 V and 24 V systems. It features -40 V V_DS, 0.029 Ω R_DS(on) at -10 V V_GS, -16 A continuous drain current, and AEC-Q101 qualification for under-hood applications including body control modules and power distribution units.

For engineers reviewing the SQS401ENW-T1_GE3 datasheet, SQS401ENW-T1_GE3 pinout, SQS401ENW-T1_GE3 application, or SQS401ENW-T1_GE3 equivalent, key selection criteria include its 175 °C junction rating, PowerPAK 1212-8W leadless package thermal performance, -2.0 V typical gate threshold, and robust UIS/100 % R_g testing for automotive reliability validation.

Technical Context

This MOSFET uses TrenchFET® technology to achieve low on-resistance with fast switching dynamics: 11 ns turn-on delay, 10 ns rise time, and 36.5 ns turn-off delay at -20 V V_DS. Its gate charge profile (17.7 nC total, 8.1 nC Q_gd) supports efficient PWM control in DC-DC converters and motor drivers.

The device operates across -55 °C to +175 °C, with R_DS(on) increasing predictably with temperature - 0.040 Ω at 175 °C (V_GS = -10 V, I_D = -12 A). Thermal resistance is specified as 2.4 °C/W junction-to-case and 81 °C/W junction-to-ambient on a 1"² FR4 PCB.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Supports 24 V automotive battery transients up to ISO 7637-2 Pulse 5a.
R_DS(on) @ -10 V	0.029 Ω - Enables <1 W conduction loss at 16 A, critical for thermally constrained modules.
I_D Continuous	-16 A - Rated at T_C = 25 °C; maintains full current capability up to 125 °C case temperature.
Q_g Total	17.7 nC - Low gate drive energy reduces controller loading in high-frequency (>100 kHz) switching.
T_J Max	+175 °C - Qualified for under-hood placement without derating in engine control units.
E_AS	33.8 mJ - Withstands repetitive inductive switching stress in solenoid and relay driver circuits.
V_GS(th)	-2.0 V (typ) - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers.

Pinout & Package

Package: PowerPAK^® 1212-8W - 3.3 mm × 3.3 mm leadless surface-mount package with exposed drain paddle for enhanced thermal dissipation. Bottom-side solder interconnection is achieved via copper pad exposure; no solder fillet required at terminal tips.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5	Source (S)	Common source connection; pins 1–3 and 5 are internally tied to reduce source inductance in high-di/dt switching.
4	Gate (G)	Single gate input; low 1.95 Ω gate resistance enables stable driving without external gate resistor in most cases.
6, 7, 8	Drain (D)	Internally connected drain terminals; mounted to exposed copper paddle for optimal heat transfer to PCB ground plane.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTGB, HTRB, and UHAST - no parametric verification exceptions noted in final release documentation.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures in solenoid and motor commutation.
TrenchFET® architecture	Delivers 20 % lower R_DS(on) vs. planar P-channel MOSFETs at same die size - improves power density in space-constrained ECUs.
175 °C operation	Enables direct mounting near heat sources (e.g., ignition coils) without thermal derating - verified over full temperature range per S15-1309 Rev. A.

Applications

Body Control Module (BCM)	Engine Control Unit (ECU)
Use Scenario: High-side switching of interior lighting, door locks, and window lift motors in 12 V vehicle architectures. IC Role / Device Role / Timing Role: P-channel MOSFET used as load switch with integrated reverse polarity protection and short-circuit current limiting. Use Value: Low 0.029 Ω R_DS(on) minimizes voltage drop and self-heating during sustained 10–15 A loads, extending module lifetime.	Use Scenario: Controlling fuel injector drivers and ignition coil primary circuits in gasoline and diesel engines. IC Role / Device Role / Timing Role: Fast-switching high-side switch managing inductive loads with controlled turn-off to suppress voltage spikes. Use Value: 33.8 mJ E_AS rating ensures reliable operation under repeated inductive kickback without snubber components.
Power Distribution Unit (PDU)	Advanced Driver Assistance Systems (ADAS)
Use Scenario: Solid-state replacement of mechanical relays in centralized 24 V commercial vehicle power hubs. IC Role / Device Role / Timing Role: Load switch with diagnostics enabled via V_GS monitoring and current sensing feedback paths. Use Value: -2.0 V V_GS(th) allows direct interface with 3.3 V microcontroller GPIOs, reducing BOM count and layout complexity.	Use Scenario: Power gating of radar sensor modules and camera power supplies in autonomous driving platforms. IC Role / Device Role / Timing Role: Hot-swap capable high-side switch supporting controlled power-up sequencing and fault isolation. Use Value: 175 °C T_J(max) and AEC-Q101 qualification ensure uninterrupted operation in sealed, thermally isolated ADAS enclosures.

Body Control Module (BCM)

Engine Control Unit (ECU)

Use Scenario: High-side switching of interior lighting, door locks, and window lift motors in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: P-channel MOSFET used as load switch with integrated reverse polarity protection and short-circuit current limiting.

Use Value: Low 0.029 Ω R_DS(on) minimizes voltage drop and self-heating during sustained 10–15 A loads, extending module lifetime.

Use Scenario: Controlling fuel injector drivers and ignition coil primary circuits in gasoline and diesel engines.

IC Role / Device Role / Timing Role: Fast-switching high-side switch managing inductive loads with controlled turn-off to suppress voltage spikes.

Use Value: 33.8 mJ E_AS rating ensures reliable operation under repeated inductive kickback without snubber components.

Power Distribution Unit (PDU)

Advanced Driver Assistance Systems (ADAS)

Use Scenario: Solid-state replacement of mechanical relays in centralized 24 V commercial vehicle power hubs.

IC Role / Device Role / Timing Role: Load switch with diagnostics enabled via V_GS monitoring and current sensing feedback paths.

Use Value: -2.0 V V_GS(th) allows direct interface with 3.3 V microcontroller GPIOs, reducing BOM count and layout complexity.

Use Scenario: Power gating of radar sensor modules and camera power supplies in autonomous driving platforms.

IC Role / Device Role / Timing Role: Hot-swap capable high-side switch supporting controlled power-up sequencing and fault isolation.

Use Value: 175 °C T_J(max) and AEC-Q101 qualification ensure uninterrupted operation in sealed, thermally isolated ADAS enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPbF	TO-220 package, higher R_DS(on) (0.3 Ω), lower I_D (-12 A), not AEC-Q101 qualified	Requires heatsink; unsuitable for under-hood automotive deployment	Select only for non-automotive industrial prototypes where cost outweighs thermal and qualification requirements.
DMT4005LPS-13	PowerDI^® 5060 package, -40 V, 0.025 Ω R_DS(on) at -10 V, AEC-Q101 qualified, but lower I_D (-12.5 A)	Better R_DS(on) but reduced current handling; smaller footprint limits thermal mass	Prefer when board space is constrained and peak load currents remain below 12.5 A.

Compared with IRF9530NPbF and DMT4005LPS-13, SQS401ENW-T1_GE3 uniquely balances -16 A current capability, 0.029 Ω on-resistance, AEC-Q101 compliance, and PowerPAK 1212-8W thermal efficiency - making it optimal for production automotive modules requiring both power density and long-term reliability.

Availability

SQS401ENW-T1_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, engine control units, and power distribution units requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for SQS401ENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The SQS401ENW-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® family, engineered specifically for high-side switching in harsh-environment vehicle subsystems demanding AEC-Q101 compliance and 175 °C operation.

FAQ

What is the maximum junction temperature rating for SQS401ENW-T1_GE3?

The SQS401ENW-T1_GE3 has a maximum operating junction temperature of +175 °C, validated per AEC-Q101 stress testing and confirmed in Vishay's S15-1309-Rev. A datasheet. This rating enables direct placement in high-temperature zones such as engine compartments and transmission control units without thermal derating up to the specified limit.

Is SQS401ENW-T1_GE3 pin-compatible with other PowerPAK 1212-8W P-channel MOSFETs?

SQS401ENW-T1_GE3 uses the standard PowerPAK 1212-8W footprint with pins 1–3 and 5 as Source, pin 4 as Gate, and pins 6–8 as Drain. While physical layout matches the JEDEC MO-229WEED-1 outline, electrical compatibility requires verification of R_DS(on), Q_g, and V_GS(th) - SQS401ENW-T1_GE3 is not guaranteed pin-compatible with non-Vishay variants due to internal die differences.

Does SQS401ENW-T1_GE3 require a gate resistor for typical automotive PWM applications?

SQS401ENW-T1_GE3 has a measured gate resistance of 1.95 Ω (typ), which provides inherent damping for most automotive PWM applications up to 100 kHz. A series gate resistor is optional and typically unnecessary unless EMI suppression or precise slew rate control is required - refer to layout guidelines in Application Note AN826 for recommended PCB routing.

What is the avalanche energy rating of SQS401ENW-T1_GE3 and how is it tested?

SQS401ENW-T1_GE3 is rated for 33.8 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, tested per JEDEC JESD24-1. This rating applies to unclamped inductive switching events such as relay coil de-energization or motor phase commutation, and is verified 100 % during production screening.

How does the R_DS(on) of SQS401ENW-T1_GE3 change with temperature and gate voltage?

SQS401ENW-T1_GE3 exhibits a normalized R_DS(on) increase of ~1.8× from 25 °C to 175 °C at V_GS = -10 V, reaching 0.040 Ω (max). At V_GS = -4.5 V, R_DS(on) rises to 0.047 Ω (max) at 25 °C and scales similarly - data confirmed in Figure 7 and Table 2 of the official datasheet.

SQS401ENW-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8W

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 29mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21.2 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1875 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8W

SQS401ENW-T1_GE3 FAQ

1.How can I place an order for SQS401ENW-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQS401ENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQS401ENW-T1_GE3 reliable?

The price and inventory of SQS401ENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS401ENW-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQS401ENW-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS401ENW-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQS401ENW-T1_GE3?

SQS401ENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQS401ENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQS401ENW-T1_GE3?

For technical support, including SQS401ENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS401ENW-T1_GE3 requirements.

6.How does Aetrix verify that SQS401ENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQS401ENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS401ENW-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQS401ENW-T1_GE3?

All SQS401ENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS401ENW-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQS401ENW-T1_GE3 part is unused and in its original packaging.

Return procedure for SQS401ENW-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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