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Vishay Siliconix SQS405CENW-T1_GE3
- Part No.:
- SQS405CENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SQS405CENW-T1_GE3.pdf
- Description:
- AUTOMOTIVE P-CHANNEL 12 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:5,813
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Product details
Overview
SQS405CENW-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET rated for -12 V drain-source voltage, 0.015 Ω RDS(on) at -4.5 V gate drive, and -16 A continuous drain current at TC = 25 °C. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, making it suitable for high-reliability power switching in automotive body control modules and load management systems.
For engineers reviewing the SQS405CENW-T1_GE3 datasheet, SQS405CENW-T1_GE3 pinout, SQS405CENW-T1_GE3 application, or SQS405CENW-T1_GE3 equivalent, key selection criteria include its low RDS(on) at 2.5 V gate drive (0.022 Ω), 100 % UIS and Rg testing, PowerPAK 1212-8W thermally enhanced package, and guaranteed operation across -55 °C to +175 °C ambient.
Technical Context
This P-channel MOSFET uses Vishay's TrenchFET® technology to achieve low on-resistance and fast switching with controlled gate charge (Qg = 53.6 nC typ., Qgd = 9.6 nC). Its gate threshold voltage range of -0.45 V to -1.0 V enables robust turn-on with standard 3.3 V or 5 V logic-level controllers in high-side switch configurations.
The device integrates a low-VSD body diode (VSD = -0.81 V typ. at -10 A) with reverse recovery time trr = 44 ns and Qrr = 32 nC, supporting synchronous rectification and bidirectional current handling in compact DC/DC converters and motor drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum blocking voltage for 12 V automotive battery rail applications |
| RDS(on) @ VGS = -4.5 V | 0.0106 Ω typ. - Enables <1.0 W conduction loss at 10 A, reducing thermal stress in space-constrained modules |
| RDS(on) @ VGS = -2.5 V | 0.0166 Ω typ. - Ensures reliable turn-on with 3.3 V microcontroller GPIOs without level-shifting |
| ID (continuous) | -16 A @ TC = 25 °C - Supports high-current loads such as HVAC actuators and LED headlamp drivers |
| Junction temp. range | -55 °C to +175 °C - Meets under-hood thermal requirements per AEC-Q101 Grade 0 |
| Qg / Qgd | 53.6 nC / 9.6 nC - Enables efficient PWM switching up to 200 kHz with minimal gate driver power demand |
| RthJC | 3.8 °C/W - Allows direct heatsinking via exposed drain pad for >30 W power dissipation in PCB-mounted designs |
Pinout & Package
Package: PowerPAK® 1212-8W - thermally optimized 3.3 mm × 3.3 mm leadless package with exposed drain paddle for low RthJC.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Source (S) | Common source connection; electrically tied to internal source metallization and bottom thermal pad |
| 4 | Gate (G) | Control input; requires ≤ ±8 V gate drive; 1.55–4.65 Ω gate resistance affects switching speed and ringing |
| 6, 7, 8 | Drain (D) | High-side switched output; connected to exposed copper paddle for thermal conduction to PCB |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test conditions including HTOL, TC, UHAST, and ESD-HBM ≥ 2 kV |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching ruggedness (EAS = 12.8 mJ) |
| TrenchFET® architecture | Delivers 30 % lower RDS(on) vs. planar P-channel MOSFETs at same die size, improving power density |
| Low VGS(th) range | -0.45 V to -1.0 V ensures turn-on with 3.3 V logic and stable operation over temperature and process variation |
| Body diode with fast trr | 44 ns typical reverse recovery time supports high-frequency freewheeling in buck regulators and H-bridge drives |
Applications
| Automotive Body Control Module (BCM) | LED Headlamp Driver |
|---|---|
Use Scenario: High-side switching of solenoids, relays, and window lift motors in centralized vehicle body electronics. IC Role / Device Role / Timing Role: P-channel high-side load switch controlling 12 V battery-fed loads with logic-level gate drive. Use Value: Low RDS(on) minimizes I²R heating during extended duty cycles; AEC-Q101 qualification ensures field reliability over 15-year vehicle life. | Use Scenario: Constant-current regulation and PWM dimming of high-brightness LED arrays in adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: Synchronous rectifier and current-sense path switch in buck-based LED driver topology. Use Value: Fast trr and low Qrr reduce switching losses and EMI; 175 °C rating accommodates under-hood ambient temperatures. |
| Engine Control Unit (ECU) Power Distribution | Electric Power Steering (EPS) Auxiliary Load Switch |
Use Scenario: Redundant power routing for critical sensors and actuators in engine management systems requiring fail-safe isolation. IC Role / Device Role / Timing Role: Fault-tolerant high-side switch enabling hot-plug and short-circuit protection via external current sensing. Use Value: Guaranteed RDS(on) stability over -40 °C to +150 °C junction enables accurate current monitoring across full operating range. | Use Scenario: Controlled engagement/disengagement of auxiliary hydraulic pumps or cooling fans in EPS subsystems. IC Role / Device Role / Timing Role: Thermally robust load switch interfacing with 3.3 V CAN/LIN microcontrollers. Use Value: 0.022 Ω RDS(on) at -2.5 V gate drive eliminates need for gate boosters, simplifying PCB layout and BOM. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | TO-220 package, higher RDS(on) (0.3 Ω @ -10 V), no AEC-Q101 qualification, 150 °C max TJ | Non-automotive industrial switching only; unsuitable for under-hood or safety-critical use | Select only for cost-sensitive non-automotive prototypes where thermal performance and qualification are secondary |
| DMT6009LPS-13 | PowerDI 5060 package, RDS(on) = 0.0095 Ω @ -4.5 V, AEC-Q101 qualified, but lower ID (-12 A) | Better RDS(on) but reduced current capability; smaller footprint limits heat spreading | Prefer for space-constrained designs with <12 A peak load; verify thermal margin with RthJA = 90 °C/W |
Compared with IRF9530NPBF and DMT6009LPS-13, SQS405CENW-T1_GE3 delivers optimal balance of current rating (-16 A), low gate-threshold compatibility (down to -2.5 V), and automotive qualification in a thermally superior PowerPAK 1212-8W package-making it the preferred choice for production BCM and EPS load-switching designs.
Availability
SQS405CENW-T1_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, LED lighting drivers, and electric power steering auxiliary load switching requiring stable component supply and long-term lifecycle support.
Supply support for SQS405CENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQS405CENW-T1_GE3 belongs to Vishay's TrenchFET® Automotive P-Channel MOSFET product line, engineered specifically for high-reliability, high-temperature power switching in 12 V battery systems where low gate-drive voltage operation and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum continuous drain current rating for SQS405CENW-T1_GE3 at 125 °C case temperature?
The SQS405CENW-T1_GE3 maintains a continuous drain current rating of -16 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and stable RDS(on) performance up to elevated temperatures, enabling use in high-ambient environments like engine compartments without derating.
Does SQS405CENW-T1_GE3 support 3.3 V logic-level gate drive in automotive applications?
Yes, SQS405CENW-T1_GE3 supports 3.3 V logic-level gate drive: its gate threshold voltage range is -0.45 V to -1.0 V, and RDS(on) is fully characterized at -2.5 V (0.0166 Ω typ.). This allows direct interface with 3.3 V microcontrollers in automotive body control units without external level shifters or gate drivers.
Is SQS405CENW-T1_GE3 qualified to AEC-Q101, and what tests does that include?
Yes, SQS405CENW-T1_GE3 is AEC-Q101 qualified. This includes stress testing per the AEC-Q101 standard: high-temperature operating life (HTOL), temperature cycling (TC), unbiased highly accelerated stress test (UHAST), and electrostatic discharge (HBM ≥ 2 kV). Full qualification data is documented in Vishay's reliability report for document number 63134.
What is the thermal resistance from junction to case (RthJC) for SQS405CENW-T1_GE3, and how does it impact heatsinking?
The junction-to-case thermal resistance (RthJC) of SQS405CENW-T1_GE3 is 3.8 °C/W. This low value results from the exposed drain paddle in the PowerPAK 1212-8W package, enabling efficient heat transfer to a PCB copper plane or external heatsink-supporting >30 W continuous power dissipation when properly mounted.
Can SQS405CENW-T1_GE3 be used in synchronous rectification topologies?
Yes, SQS405CENW-T1_GE3 is suitable for synchronous rectification due to its low RDS(on) (0.0106 Ω typ. at -4.5 V), fast body diode (trr = 44 ns, Qrr = 32 nC), and low Qgd/Qg ratio. These characteristics minimize conduction and switching losses in buck-derived DC/DC converters used in automotive infotainment and ADAS power supplies.
SQS405CENW-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 13.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 81 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3050 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 39W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SQS405CENW-T1_GE3 FAQ
1.How can I place an order for SQS405CENW-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS405CENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS405CENW-T1_GE3 reliable?
The price and inventory of SQS405CENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS405CENW-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS405CENW-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS405CENW-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS405CENW-T1_GE3?
SQS405CENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS405CENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS405CENW-T1_GE3?
For technical support, including SQS405CENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS405CENW-T1_GE3 requirements.
6.How does Aetrix verify that SQS405CENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS405CENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS405CENW-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS405CENW-T1_GE3?
All SQS405CENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS405CENW-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS405CENW-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS405CENW-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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