My Inquiry
My Account
Vishay Siliconix SQS405EN-T1_GE3
- Part No.:
- SQS405EN-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SQS405EN-T1_GE3.pdf
- Description:
- MOSFET P-CH 12V 16A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:20,590
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQS405EN-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET designed for high-efficiency, space-constrained power switching in 12 V systems. It features -12 V VDS, 0.020 Ω RDS(on) at VGS = -4.5 V, -16 A continuous drain current, and operates up to +175 °C junction temperature - enabling use in engine control units, body electronics, and load switch applications.
For engineers reviewing the SQS405EN-T1_GE3 datasheet, SQS405EN-T1_GE3 pinout, SQS405EN-T1_GE3 application, or SQS405EN-T1_GE3 equivalent, key selection criteria include AEC-Q101 qualification, trench-based low-RDS(on) performance at low gate drive, thermal robustness in PowerPAK 1212-8, and verified UIS/100% Rg testing for automotive reliability.
Technical Context
This P-channel MOSFET uses Vishay's TrenchFET® technology to achieve low on-resistance with minimal gate charge (Qg = 49.8 nC typ.) and fast switching (td(on) = 27 ns, tf = 26 ns). Its -0.6 V typical gate threshold voltage enables reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers in high-side configurations.
The device is optimized for DC load switching where reverse polarity protection, hot-swap control, or battery disconnect are required. Its 3.3 mm × 3.3 mm PowerPAK 1212-8 package delivers 3.8 °C/W junction-to-case thermal resistance and supports PCB-mounted thermal dissipation up to 39 W at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Rated for 12 V automotive battery systems with margin against transients. |
| RDS(on) @ VGS = -4.5 V | 0.020 Ω - Enables <1.5 W conduction loss at 13.5 A, critical for thermally constrained modules. |
| ID Continuous | -16 A - Supports high-current loads such as fuel pumps, HVAC actuators, and lighting drivers. |
| Junction Temp Range | -55 °C to +175 °C - Validated for under-hood operation per AEC-Q101 stress requirements. |
| Qg Total Gate Charge | 49.8 nC typ. - Low drive power demand allows use with low-power microcontrollers or integrated gate drivers. |
| RthJC | 3.8 °C/W - Direct thermal path from die to PCB enables efficient heat transfer without external heatsinks. |
| Avalanche Energy EAS | 18 mJ - Withstands inductive switching surges in relay/coil driving without external snubbers. |
Pinout & Package
Package: PowerPAK® 1212-8 - leadless, surface-mount, 3.3 mm × 3.3 mm footprint with exposed drain pad for thermal and electrical connection. Height: 1.05 mm max.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 5, 6, 7, 8 | Drain (D) | Exposed copper drain pad (pins 5–8 bottom-side) provides primary thermal path and high-current return path. |
| 4 (top-side) | Gate (G) | Single top-side gate pad; requires controlled trace routing to minimize ringing and EMI in high-speed switching. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, transmission, and ADAS subsystems. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness. |
| TrenchFET® architecture | Delivers 20 % lower RDS(on) vs. planar P-channel MOSFETs at same die size and voltage rating. |
| PowerPAK 1212-8 package | 40 % smaller footprint than TSSOP-8 with 20× better thermal performance than TSSOP-8 and 10× vs. SO-8. |
| 175 °C maximum TJ | Enables operation in high-ambient environments without derating, reducing need for thermal margin overhead. |
Applications
| Engine Control Module (ECM) | Body Control Module (BCM) |
|---|---|
|
Use Scenario: High-side switching of solenoid valves and fuel injectors in gasoline/diesel engine management. IC Role / Device Role / Timing Role: P-channel load switch controlling 12 V actuator power with fast turn-off to prevent coil flyback damage. Use Value: 18 mJ avalanche energy rating eliminates need for external TVS diodes; 175 °C rating ensures reliability near exhaust manifolds. |
Use Scenario: Reverse polarity protection and battery disconnect in door module, seat control, or lighting circuits. IC Role / Device Role / Timing Role: High-side protection switch placed between battery and downstream LDOs/microcontrollers. Use Value: -0.6 V VGS(th) ensures full enhancement with 3.3 V MCU GPIO; low RDS(on) minimizes voltage drop during cranking. |
| Advanced Driver Assistance Systems (ADAS) | Electric Power Steering (EPS) |
|
Use Scenario: Power sequencing and fault-isolation for radar sensor supply rails in front-end ADAS domain controllers. IC Role / Device Role / Timing Role: Controlled hot-swap switch enabling safe insertion/removal of sensor submodules. Use Value: 49.8 nC Qg allows precise timing control via PWM gate drive; AEC-Q101 qualification meets ASIL-B system requirements. |
Use Scenario: Motor phase enable/disable and safety shutdown in EPS motor driver H-bridge auxiliary supplies. IC Role / Device Role / Timing Role: Redundant high-side switch providing fail-safe power cutoff during torque fault conditions. Use Value: 3.8 °C/W RthJC maintains <100 °C junction temp under 15 A continuous load; -16 A rating supports peak assist currents. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SQS406EN-T1_GE3 | Same PowerPAK 1212-8 package, but -20 V VDS, 0.015 Ω RDS(on) @ -4.5 V, higher ID rating (-20 A). | Better suited for 24 V commercial vehicle systems or designs requiring higher voltage margin. | Select when higher VDS headroom or lower conduction loss at >15 A is required; not a direct replacement due to different breakdown rating. |
| SI7401DN-T1-GE3 | SO-8 package, -30 V VDS, 0.022 Ω RDS(on) @ -10 V, 175 °C rated, but larger footprint and higher RthJA (65 °C/W). | Used where legacy SO-8 layout compatibility is mandatory or where higher VDS is needed for industrial 24 V systems. | Choose only if board redesign for PowerPAK is impractical; expect ~30 % higher thermal resistance and reduced power density. |
Compared with SQS405EN-T1_GE3, SQS406EN-T1_GE3 offers higher voltage capability and lower RDS(on) but requires validation of gate drive compatibility at -20 V rating, while SI7401DN-T1-GE3 trades compactness and thermal efficiency for package familiarity and broader voltage range - making SQS405EN-T1_GE3 optimal for new 12 V automotive designs prioritizing size and thermal performance.
Availability
SQS405EN-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control, body electronics, and ADAS subsystems requiring stable component supply across long production lifecycles and stringent quality traceability.
Supply support for SQS405EN-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS405EN-T1_GE3 belongs to Vishay's AEC-Q101-qualified TrenchFET® PowerPAK family, engineered specifically for high-current, high-temperature automotive power switching where small size, low RDS(on), and ruggedness are critical.
FAQ
What is the maximum gate-source voltage rating for SQS405EN-T1_GE3?
The absolute maximum VGS for SQS405EN-T1_GE3 is ±8 V. Exceeding this rating risks permanent gate oxide damage. Designers should limit gate drive to -4.5 V or -2.5 V for optimal RDS(on) and ensure transient clamping (e.g., Zener diode) is used if driving from higher-voltage sources. This specification is confirmed in the Absolute Maximum Ratings table of Vishay document 65704.
Is SQS405EN-T1_GE3 suitable for hot-swap applications?
Yes, SQS405EN-T1_GE3 is well-suited for hot-swap applications due to its low RDS(on) (0.020 Ω), fast switching (tf = 26 ns), and AEC-Q101 qualification. Its 100 % UIS testing ensures robustness against inrush currents and line transients. When used with appropriate current-limiting circuitry and gate slew-rate control, SQS405EN-T1_GE3 reliably manages live-insertion events in automotive domain controllers and modular ECUs.
Does SQS405EN-T1_GE3 have integrated ESD protection?
No, SQS405EN-T1_GE3 does not include integrated ESD protection diodes. The datasheet specifies only gate-source leakage (±100 nA) and does not list human-body model (HBM) or charged-device model (CDM) ESD ratings. External TVS or RC filtering is recommended on the gate line in systems exposed to handling or connector mating cycles. This absence is consistent across Vishay's TrenchFET® PowerPAK portfolio per document 65704.
What is the thermal resistance from junction to ambient for SQS405EN-T1_GE3 on a standard PCB?
The junction-to-ambient thermal resistance (RthJA) for SQS405EN-T1_GE3 is 81 °C/W when mounted on a 1" square FR4 PCB (2 oz copper, double-sided). This value assumes no additional copper pour; adding ≥0.3 in² of drain-side spreading copper reduces RthJA significantly. The 3.8 °C/W RthJC confirms strong thermal coupling to the PCB, making board-level thermal design highly effective for this part.
Can SQS405EN-T1_GE3 be used in synchronous rectification?
No, SQS405EN-T1_GE3 is not recommended for synchronous rectification. It is a P-channel enhancement-mode MOSFET optimized for high-side switching, not bidirectional conduction. Its body diode forward voltage (VSD = -0.8 V typ. at -10 A) is higher than dedicated synchronous rectifiers, and it lacks the low Qrr and tight VF distribution required for high-frequency AC-DC or DC-DC converter secondary-side operation. Use N-channel devices like SiR626DP for such roles.
SQS405EN-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 13.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2650 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 39W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SQS405EN-T1_GE3 FAQ
1.How can I place an order for SQS405EN-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS405EN-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS405EN-T1_GE3 reliable?
The price and inventory of SQS405EN-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS405EN-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS405EN-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS405EN-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS405EN-T1_GE3?
SQS405EN-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS405EN-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS405EN-T1_GE3?
For technical support, including SQS405EN-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS405EN-T1_GE3 requirements.
6.How does Aetrix verify that SQS405EN-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS405EN-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS405EN-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS405EN-T1_GE3?
All SQS405EN-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS405EN-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS405EN-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS405EN-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQS405EN-T1_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
