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Vishay Siliconix SQS405ENW-T1_GE3
- Part No.:
- SQS405ENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SQS405ENW-T1_GE3.pdf
- Description:
- MOSFET P-CH 12V 16A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,687
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Product details
Overview
SQS405ENW-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET designed for high-efficiency, space-constrained power switching in 12 V systems. It delivers -16 A continuous drain current at TC = 25 °C, features RDS(on) of 0.020 Ω at VGS = -4.5 V, and operates up to +175 °C junction temperature - enabling use in engine control units, body electronics, and load switch applications requiring AEC-Q101 compliance.
For engineers reviewing the SQS405ENW-T1_GE3 datasheet, SQS405ENW-T1_GE3 pinout, SQS405ENW-T1_GE3 application, or SQS405ENW-T1_GE3 equivalent, key selection criteria include its PowerPAK 1212-8 leadless package thermal performance (RthJC = 3.8 °C/W), -12 V VDS rating, 100 % UIS and Rg tested qualification, and guaranteed operation across -55 °C to +175 °C.
Technical Context
This device employs TrenchFET® technology to achieve low on-resistance and fast switching with optimized gate charge (Qg = 49.8 nC typ. at VGS = -8 V). Its P-channel architecture enables high-side switching without level-shifting circuitry in 12 V automotive rails.
The PowerPAK 1212-8 package integrates an exposed copper drain pad for direct thermal conduction to PCB copper, delivering RthJA = 81 °C/W (PCB mount) and supporting high-power density designs where thermal management is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Supports full operation within standard 12 V automotive battery range including load dump transients. |
| RDS(on) @ VGS = -4.5 V | 0.020 Ω - Enables <1.5 W conduction loss at -13.5 A, reducing thermal stress in compact layouts. |
| ID (continuous) | -16 A - Sustains high-current loads such as fuel pumps, solenoids, and LED matrix drivers without derating at TC = 25 °C. |
| Junction temp. range | -55 °C to +175 °C - Qualified for under-hood environments including engine compartments and transmission control modules. |
| Qg (total gate charge) | 49.8 nC (typ.) - Balances switching speed and drive strength for 10–100 kHz PWM control without excessive gate driver power demand. |
| VGS(th) | -0.45 V to -1.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level controllers in high-side configurations. |
| AEC-Q101 qualified | Yes - Meets automotive reliability requirements including HTOL, UHAST, and temperature cycling per AEC specification. |
Pinout & Package
Package: PowerPAK® 1212-8 - 3.3 mm × 3.3 mm × 1.05 mm leadless surface-mount package with exposed drain pad for enhanced thermal dissipation. Footprint compatible with TSOP-6 but with >2× die area and superior thermal resistance (RthJC = 3.8 °C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Drain (D) | High-current output node; electrically and thermally connected to exposed bottom copper pad - must be soldered to large PCB copper pour for thermal integrity. |
| 4 | Gate (G) | Control input; requires stable negative bias relative to source to turn on; gate resistance Rg = 1.1–4 Ω limits ringing and EMI during switching. |
| 5, 6, 7 | Source (S) | Reference node for gate drive; tied to system ground or load return path; forms intrinsic body diode anode (S) to drain (D). |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process | Enables ultra-low RDS(on) and high cell density in small footprint - critical for minimizing board area in ECUs and ADAS modules. |
| 100 % Rg and UIS tested | Ensures robustness against gate overvoltage and unclamped inductive switching events common in motor and solenoid drives. |
| Exposed drain thermal pad | Provides direct thermal path to PCB - reduces junction-to-ambient resistance by >50 % vs. TSSOP-8, enabling higher sustained current in same area. |
| AEC-Q101 qualification | Validated for automotive production use with zero defects in reliability stress tests - eliminates need for additional qualification by Tier-1 suppliers. |
| 175 °C maximum TJ | Supports operation in high-temperature zones (e.g., near exhaust manifolds or inverters) without thermal shutdown or parameter drift. |
Applications
| Engine Control Module (ECM) Load Switch | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: Switching 12 V power to fuel injectors, ignition coils, or idle air control valves in engine management systems. IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing controlled power delivery with fast turn-on/turn-off timing (td(on) = 27 ns, tf = 26 ns). Use Value: Low RDS(on) minimizes voltage drop and self-heating during extended duty cycles; 175 °C rating ensures reliability under hood ambient temperatures. | Use Scenario: Managing power distribution to door locks, window lift motors, interior lighting, and HVAC actuators. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays - operated via microcontroller GPIO with no external level shifter required. Use Value: Eliminates relay wear-out and contact arcing; AEC-Q101 qualification guarantees >15-year field life in harsh vibration and thermal cycling environments. |
| LED Headlamp Driver | Start-Stop System Battery Disconnect |
Use Scenario: PWM dimming and on/off control of high-brightness LED arrays in adaptive front lighting systems (AFS). IC Role / Device Role / Timing Role: Low-loss, high-frequency switching element handling up to 10 A pulsed current with minimal thermal rise. Use Value: Fast switching (tr = 29 ns) supports >5 kHz PWM without audible noise; low Qgd (8.2 nC) reduces Miller-induced shoot-through risk. | Use Scenario: Isolating starter battery from auxiliary loads during engine cranking to preserve voltage for ECU and sensors. IC Role / Device Role / Timing Role: Bidirectional blocking switch activated only during cranking event - leveraging body diode for reverse current protection. Use Value: Rugged UIS rating (EAS = 18 mJ) withstands inductive kickback from solenoids and alternator field collapse; -64 A pulsed current handles peak cranking surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SQS405EN-T1_GE3 | Same die, identical electrical specs; differs only in tape-and-reel packaging (GE3 = 3,000 pcs/reel vs. GE2 = 1,000 pcs/reel). | No functional difference; both rated for automotive use and share identical thermal and reliability data. | Select SQS405ENW-T1_GE3 for automated SMT assembly requiring standard 3k reel format and moisture sensitivity level (MSL) 1 handling. |
| SI7401DN-T1-GE3 | P-channel, -20 V VDS, 0.025 Ω RDS(on) @ -4.5 V, PowerPAK SO-8 package (larger footprint, higher RthJC = 1.8 °C/W). | Better voltage margin for 16 V systems; less compact layout due to 5.0 mm × 6.0 mm footprint and lower power density. | Choose SI7401DN-T1-GE3 only if design requires higher VDS margin or existing SO-8 land pattern reuse - not a drop-in replacement. |
Compared with SQS405ENW-T1_GE3, the SQS405EN-T1_GE3 offers identical performance in a different reel configuration, while SI7401DN-T1-GE3 trades compactness and thermal efficiency for higher voltage headroom and legacy package compatibility - making SQS405ENW-T1_GE3 optimal for new 12 V automotive designs prioritizing size and thermal performance.
Availability
SQS405ENW-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control, body electronics, LED lighting, and start-stop system designs requiring stable component supply, AEC-Q101 compliance, and high-temperature operational continuity.
Supply support for SQS405ENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS405ENW-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK 1212-8 family, engineered specifically for high-power-density, high-temperature switching in next-generation vehicle electronics where space, thermal, and reliability constraints are most stringent.
FAQ
What is the maximum continuous drain current rating for SQS405ENW-T1_GE3 at 125 °C case temperature?
The SQS405ENW-T1_GE3 maintains a continuous drain current rating of -16 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and AEC-Q101 qualification - ensuring stable operation in hot under-hood locations without current derating below 125 °C. The device's RDS(on) increases only modestly to 0.024 Ω at TJ = 125 °C, preserving efficiency across its full operating range.
Does SQS405ENW-T1_GE3 require a gate driver IC for microcontroller-level control?
No, SQS405ENW-T1_GE3 does not require an external gate driver IC when driven from standard 3.3 V or 5 V microcontrollers. Its gate threshold voltage (VGS(th)) ranges from -0.45 V to -1.0 V, and it achieves full enhancement at VGS = -4.5 V - compatible with most automotive MCUs' GPIO outputs. However, a series gate resistor (10–100 Ω) is recommended to dampen ringing and control dV/dt during switching.
How is thermal management handled in the PowerPAK 1212-8 package of SQS405ENW-T1_GE3?
The SQS405ENW-T1_GE3 uses a PowerPAK 1212-8 package with an exposed copper drain pad on the bottom side, which serves as the primary thermal path. To maximize heat transfer, the drain pad must be soldered to a large, thermally robust PCB copper area - ideally ≥0.3 in² - connected to internal ground or power planes. This configuration achieves RthJC = 3.8 °C/W and RthJA = 81 °C/W (1"² FR4), significantly outperforming TSSOP-8 alternatives.
Is SQS405ENW-T1_GE3 suitable for reverse polarity protection circuits?
Yes, SQS405ENW-T1_GE3 is well-suited for reverse polarity protection due to its P-channel topology, -12 V VDS rating, and low RDS(on) of 0.020 Ω. When placed in the high-side rail with source tied to battery positive and drain to load, it blocks reverse current while introducing minimal forward voltage drop (<320 mV at 16 A). Its 100 % UIS testing further ensures resilience against load dump and battery reversal transients.
What is the avalanche energy rating (EAS) of SQS405ENW-T1_GE3, and how is it validated?
The SQS405ENW-T1_GE3 has a single-pulse avalanche energy rating (EAS) of 18 mJ, measured under standardized test conditions (L = 0.1 mH, ID = -19 A). This rating is validated through 100 % production UIS (unclamped inductive switching) testing per JEDEC JESD24-11, confirming ruggedness against inductive kickback in motor, solenoid, and relay driving applications - a critical requirement for automotive power switches.
SQS405ENW-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 13.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2650 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 39W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SQS405ENW-T1_GE3 FAQ
1.How can I place an order for SQS405ENW-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS405ENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS405ENW-T1_GE3 reliable?
The price and inventory of SQS405ENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS405ENW-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS405ENW-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS405ENW-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS405ENW-T1_GE3?
SQS405ENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS405ENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS405ENW-T1_GE3?
For technical support, including SQS405ENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS405ENW-T1_GE3 requirements.
6.How does Aetrix verify that SQS405ENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS405ENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS405ENW-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS405ENW-T1_GE3?
All SQS405ENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS405ENW-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS405ENW-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS405ENW-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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