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Vishay Siliconix SQS407ENW-T1_GE3
- Part No.:
- SQS407ENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8W
- Datasheet:
-
SQS407ENW-T1_GE3.pdf
- Description:
- MOSFET P-CH 30V 16A PPAK1212-8W
- Quantity:
- Payment:
- Shipping:
Inventory:27,453
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Product details
Overview
SQS407ENW-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in PowerPAK 1212-8W package, rated for -30 V VDS, 0.0108 Ω RDS(on) at -10 V VGS, and -16 A continuous drain current at TC = 25 °C, operating up to +175 °C junction temperature in engine control modules and power distribution units.
For engineers reviewing the SQS407ENW-T1_GE3 datasheet, SQS407ENW-T1_GE3 pinout, SQS407ENW-T1_GE3 application, or SQS407ENW-T1_GE3 equivalent, key selection criteria include AEC-Q101 qualification, 100 % Rg and UIS testing, thermal performance under high ambient conditions, and compatibility with 4.5 V gate drive in low-voltage automotive systems.
Technical Context
This MOSFET uses Vishay's TrenchFET® technology to achieve low on-resistance and fast switching with controlled Qg (77 nC max) and low Crss (465 pF max), enabling efficient high-frequency PWM operation in DC-DC converters and load switches. Its -2.0 V typical VGS(th) ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers.
The device integrates a robust body diode with -0.8 V typical VSD at -8.8 A, supporting synchronous rectification and reverse-current protection in bidirectional power paths. Thermal design is supported by RthJC = 2.4 °C/W and RthJA = 81 °C/W (PCB mount), validated per JEDEC JESD51-7 standards on 1"² FR4 board.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for 12 V automotive battery rail applications with load dump margin. |
| RDS(on) @ -10 V | 0.0108 Ω - Enables <1.4 W conduction loss at -12 A, critical for thermally constrained under-hood modules. |
| RDS(on) @ -4.5 V | 0.0170 Ω - Ensures usable on-resistance with 5 V microcontroller gate drive in start-stop systems. |
| ID (cont.) | -16 A @ TC = 25 °C - Sustains full-rated current without derating when mounted on heatsinked PCB areas. |
| TJ Range | -55 to +175 °C - Qualified for engine compartment placement per AEC-Q101, eliminating need for external thermal sensors. |
| Qg | 77 nC - Balances switching speed and gate driver power demand in 100–500 kHz DC-DC stages. |
| EAS | 26.5 mJ - Withstands single-pulse inductive energy from solenoid or motor coil flyback without failure. |
Pinout & Package
PowerPAK 1212-8W is a leadless surface-mount package measuring 3.3 mm × 3.3 mm × 0.85 mm, with exposed drain copper on the bottom side for enhanced thermal transfer and top-side source/gate terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Source (S) | Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt loads. |
| 4 | Gate (G) | Single gate input optimized for low Rg (5 Ω typ) to minimize Miller-induced oscillation during hard switching. |
| 6, 7, 8, D-bottom | Drain (D) | Eight-terminal drain connection plus bottom-exposed copper enables <2.4 °C/W junction-to-case thermal path to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use across temperature, humidity, and mechanical shock profiles per Rev. D test plan. |
| 100 % Rg tested | Ensures consistent gate drive timing and eliminates batch-to-batch variation in switching behavior. |
| 100 % UIS tested | Each unit passes unclamped inductive switching stress at rated IAS = -23 A, guaranteeing ruggedness in relay replacement. |
| TrenchFET® architecture | Delivers 17 % lower RDS(on) vs. planar P-channel equivalents at same die size, improving power density. |
| Exposed drain thermal pad | Enables direct thermal coupling to inner-layer copper pours, reducing TJ rise by up to 35 °C vs. standard SO-8. |
Applications
| Engine Control Unit (ECU) Power Switch | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: High-side switch controlling fuel injector solenoids in gasoline direct injection systems. IC Role / Device Role / Timing Role: P-channel high-side load switch with fast turn-off (<81 ns td(off)) to meet precise fuel pulse width requirements. Use Value: -175 °C rated junction temperature allows mounting directly on ECU main PCB near MCU, eliminating discrete heatsinks. | Use Scenario: Reverse-polarity protection and load switching for interior lighting and window lift motors. IC Role / Device Role / Timing Role: Low-RDS(on) P-channel MOSFET used as ideal diode and smart load switch in 12 V supply rail. Use Value: 0.0170 Ω RDS(on) at -4.5 V VGS minimizes voltage drop and heat generation during cold-cranking (6.5 V battery). |
| Start-Stop System Battery Management | Electric Power Steering (EPS) Motor Driver |
Use Scenario: Bidirectional current sensing and isolation between starter battery and auxiliary AGM battery. IC Role / Device Role / Timing Role: P-channel MOSFET configured in back-to-back pair for controlled battery disconnect and regenerative braking energy routing. Use Value: Matched VGS(th) (-2.0 V typ) and low Crss ensure symmetrical turn-on/turn-off timing, preventing shoot-through during polarity reversal. | Use Scenario: Half-bridge high-side switch in 3-phase EPS inverter driving 24 V BLDC motor. IC Role / Device Role / Timing Role: High-reliability P-channel switch handling peak currents up to -64 A (IDM) during torque assist transients. Use Value: 26.5 mJ EAS rating withstands motor phase collapse energy without avalanche failure during emergency stop events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPbF | TO-220 package, higher RDS(on) (0.3 Ω @ -10 V), no AEC-Q101 qualification | Requires heatsink and external thermal management; limited to non-automotive industrial use | Select only for cost-sensitive non-automotive designs where footprint and thermal performance are secondary. |
| DMT6009LPS-13 | PowerDI 5060 package, similar RDS(on) (0.011 Ω @ -10 V), AEC-Q101 qualified, but lower ID (-12 A) | Lower current rating restricts use to sub-10 A loads like HVAC actuators or small pumps | Prefer for space-constrained BCM nodes where 12 A max current suffices and smaller 5.0 × 6.0 mm footprint is required. |
Compared with IRF9530NPbF and DMT6009LPS-13, SQS407ENW-T1_GE3 delivers superior thermal efficiency (RthJC = 2.4 °C/W), higher current capability (-16 A), and verified automotive reliability-making it optimal for under-hood ECU and EPS applications demanding long-term stability at 175 °C.
Availability
SQS407ENW-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, battery management systems, and electric power steering modules requiring stable component supply across automotive production lifecycles.
Supply support for SQS407ENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS407ENW-T1_GE3 belongs to Vishay's TrenchFET® Automotive P-Channel family, engineered specifically for high-temperature, high-reliability switching in 12 V and 24 V vehicle electrical architectures.
FAQ
What is the maximum junction temperature rating for SQS407ENW-T1_GE3?
The SQS407ENW-T1_GE3 is rated for continuous operation from -55 °C to +175 °C junction temperature, fully compliant with AEC-Q101 stress test conditions for under-hood automotive environments. This rating is validated through accelerated life testing and thermal transient characterization, and applies to all units shipped under the GE3 suffix revision.
Is SQS407ENW-T1_GE3 compatible with lead-free reflow soldering processes?
Yes, SQS407ENW-T1_GE3 supports lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260 °C. The PowerPAK 1212-8W package uses matte tin terminations and is qualified for standard Pb-free profiles; manual soldering with iron is not recommended due to its leadless construction and exposed copper drain pad.
Does SQS407ENW-T1_GE3 require a gate resistor for stable switching?
A gate resistor is recommended for SQS407ENW-T1_GE3 to dampen ringing caused by layout inductance and gate-drain capacitance (Crss = 465 pF max). Typical values range from 2.2 Ω to 10 Ω depending on switching frequency and driver strength; the device's specified Rg = 5 Ω (typ) informs optimal external resistance selection.
What is the body diode forward voltage of SQS407ENW-T1_GE3 at -8.8 A?
The body diode forward voltage (VSD) of SQS407ENW-T1_GE3 is -0.8 V (typical) and -1.2 V (max) at -8.8 A and VGS = 0 V, measured at TA = 25 °C. This low VSD reduces conduction loss in freewheeling paths, such as in half-bridge motor drivers or reverse-current protection circuits.
How is the SQS407ENW-T1_GE3 marked on the package?
The SQS407ENW-T1_GE3 is marked with the code "Q033" on the top surface of the PowerPAK 1212-8W package, per Vishay's standard marking convention for this product family. The "GE3" suffix indicates the tape-and-reel packaging variant compliant with EIA-481-D standards.
SQS407ENW-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8W
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10.8mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 77 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4572 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 62.5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8W
SQS407ENW-T1_GE3 FAQ
1.How can I place an order for SQS407ENW-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS407ENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS407ENW-T1_GE3 reliable?
The price and inventory of SQS407ENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS407ENW-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS407ENW-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS407ENW-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS407ENW-T1_GE3?
SQS407ENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS407ENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS407ENW-T1_GE3?
For technical support, including SQS407ENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS407ENW-T1_GE3 requirements.
6.How does Aetrix verify that SQS407ENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS407ENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS407ENW-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS407ENW-T1_GE3?
All SQS407ENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS407ENW-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS407ENW-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS407ENW-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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