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Vishay Siliconix SQS415ENW-T1_GE3
- Part No.:
- SQS415ENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8W
- Datasheet:
-
SQS415ENW-T1_GE3.pdf
- Description:
- MOSFET P-CH 40V 16A PPAK1212-8W
- Quantity:
- Payment:
- Shipping:
Inventory:6,341
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Product details
Overview
SQS415ENW-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in PowerPAK 1212-8W package, rated for -40 V VDS, 0.0161 Ω RDS(on) at VGS = -10 V and -12 A, and qualified to AEC-Q101 for operation up to +175 °C junction temperature. It serves as a high-efficiency high-side load switch in 12 V automotive power distribution systems.
For engineers reviewing the SQS415ENW-T1_GE3 datasheet, SQS415ENW-T1_GE3 pinout, SQS415ENW-T1_GE3 application, or SQS415ENW-T1_GE3 equivalent, key selection criteria include its -40 V rating, low RDS(on) at -4.5 V gate drive, 100 % UIS testing, thermal performance on FR4 PCB, and AEC-Q101 qualification status for under-hood use.
Technical Context
This device uses TrenchFET® technology to achieve low on-resistance and fast switching with controlled Qg (63–82 nC) and low Crss (228–297 pF), enabling efficient PWM control in DC-DC converters and motor drivers. Its gate threshold voltage range (-1.5 to -2.5 V) ensures reliable turn-on with standard automotive logic-level signals.
The PowerPAK 1212-8W leadless package provides low RthJC of 2.4 °C/W and supports high-current handling via exposed drain copper pads on the bottom side, while requiring reflow-only assembly per Vishay's solder profile (doc# 73257).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -40 V - Maximum blocking voltage for 12 V automotive battery systems with load dump protection margin |
| RDS(on) @ VGS = -10 V | 0.0161 Ω - Enables ≤2 W conduction loss at -12 A continuous current at 25 °C |
| RDS(on) @ VGS = -4.5 V | 0.0230 Ω - Ensures robust switching with typical microcontroller GPIO drive in space-constrained modules |
| ID Continuous | -16 A - Sustained current capability at TC = 25 °C, derated to -16 A at 125 °C per package thermal limits |
| TJ Range | -55 to +175 °C - Validated operation across full automotive under-hood ambient conditions |
| Qg | 63–82 nC - Determines gate driver power requirement and switching speed in high-frequency applications |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronic components including HTOL, TC, HTRB |
Pinout & Package
PowerPAK 1212-8W is a surface-mount, leadless, thermally enhanced package with 8 terminals: three source (S), one gate (G), and four drain (D) connections distributed across bottom and top sides. Exposed drain copper enables direct thermal path to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 (Top) | Source | Common source connection for internal MOSFET die; electrically tied to pins 5 and S-bottom pads |
| 4 (Top) | Gate | Control input; requires < ±20 V gate-source voltage; Rg = 2.8–7.5 Ω affects switching timing |
| 5 (Bottom) | Source | Bottom-side source pad; used for thermal and electrical connection to PCB ground plane |
| 6, 7, 8 (Bottom) | Drain | Primary high-current drain terminals; exposed copper pads provide low-inductance, high-current path to power rail |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers lower RDS(on) per mm² than planar MOSFETs, improving power density in compact automotive modules |
| 100 % UIS tested | Each unit validated for unclamped inductive switching energy (EAS = 31.2 mJ), ensuring reliability in relay/coil driving |
| RthJC = 2.4 °C/W | Enables >20 W power dissipation directly to heatsink or copper pour without external thermal interface material |
| VGS(th) = -1.5 to -2.5 V | Guarantees turn-on with standard 3.3 V or 5 V logic outputs, eliminating need for level-shifting circuitry |
| Leadless PowerPAK 1212-8W | Reduces parasitic inductance vs. SO-8; 3.3 mm × 3.3 mm footprint saves >50 % board area over DPAK |
Applications
| Body Control Module (BCM) Load Switch | Automotive HVAC Blower Driver |
|---|---|
Use Scenario: High-side switching of solenoids, lamps, and actuators in centralized vehicle body control units. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side load switch, controlled by MCU GPIO with active-low logic. Use Value: Low RDS(on) at -4.5 V enables direct drive from 5 V MCU; AEC-Q101 qualification ensures 15+ year field life in vibration-prone environments. | Use Scenario: PWM-controlled blower motor in climate control systems requiring variable speed and reverse polarity protection. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration, paired with N-channel low-side FET for bidirectional control. Use Value: Fast tf (16–21.2 ns) and low Crss minimize shoot-through risk; 175 °C TJ rating supports sealed enclosure operation near engine bay heat sources. |
| Start-Stop System Battery Disconnect | ADAS Camera Power Sequencing |
Use Scenario: Isolating auxiliary battery circuits during engine cranking to prevent voltage sag-induced camera resets. IC Role / Device Role / Timing Role: High-reliability power path switch activated by vehicle network command (CAN/LIN) via discrete driver. Use Value: 100 % UIS testing ensures survival during repeated inductive load disconnection; -40 V rating accommodates ISO 7637-2 pulse 5a transients. | Use Scenario: Controlled power-up/down sequencing of image sensor, ISP, and lens actuator in rear-view or surround-view cameras. IC Role / Device Role / Timing Role: Precision power switch enabling timed ramp-up of multiple rails with independent enable control. Use Value: Tight VGS(th) distribution (-1.5 to -2.5 V) guarantees consistent turn-on timing across temperature; low IDSS (< -1 μA at 25 °C) prevents leakage-induced wake-up faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PbF | TO-220 package, higher RDS(on) (0.02 Ω @ -10 V), no AEC-Q101 qualification, RthJA = 62 °C/W | Requires heatsink; unsuitable for under-hood mounting or space-constrained modules | Choose only for non-automotive industrial use where qualification and size are not constraints |
| DMT4001LPS-13 | PowerDI 5060 package, -40 V, RDS(on) = 0.019 Ω @ -10 V, AEC-Q101 qualified, RthJC = 3.0 °C/W | Slightly higher on-resistance and thermal resistance; smaller 5.0 mm × 6.0 mm footprint but less copper area for thermal spreading | Prefer when board area is tighter than thermal budget; verify layout for 175 °C operation with reduced copper mass |
Compared with IRF4905PbF and DMT4001LPS-13, SQS415ENW-T1_GE3 offers the lowest RDS(on) and best thermal resistance in a 3.3 mm × 3.3 mm AEC-Q101-compliant package-making it optimal for high-density, high-temperature automotive power switches where conduction loss and thermal headroom are critical.
Availability
SQS415ENW-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, HVAC subsystems, and ADAS power management requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for SQS415ENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on high-reliability, high-performance solutions.
The SQS415ENW-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-efficiency, high-temperature power switching in 12 V and 48 V vehicle architectures.
FAQ
What is the maximum continuous drain current rating for SQS415ENW-T1_GE3 at 125 °C case temperature?
The SQS415ENW-T1_GE3 maintains a continuous drain current rating of -16 A at TC = 125 °C, matching its 25 °C rating due to package thermal design and silicon derating characteristics. This reflects its optimized thermal path via the PowerPAK 1212-8W drain-exposed construction, allowing sustained high-current operation without additional heatsinking in properly designed PCB layouts.
Is SQS415ENW-T1_GE3 suitable for use in high-side switch configurations with 3.3 V microcontroller gate drive?
Yes, SQS415ENW-T1_GE3 is fully compatible with 3.3 V logic-level gate drive: its VGS(th) range (-1.5 to -2.5 V) ensures turn-on, and RDS(on) = 0.0230 Ω at VGS = -4.5 V guarantees low conduction loss. The SQS415ENW-T1_GE3 delivers predictable switching behavior without external level shifters in automotive body control modules using 3.3 V MCUs.
Does SQS415ENW-T1_GE3 include integrated ESD protection on the gate terminal?
No, SQS415ENW-T1_GE3 does not integrate gate ESD protection diodes. Its gate-source leakage (IGSS) is specified at ±100 nA at ±20 V, and gate robustness relies on external layout practices-such as series gate resistors and local TVS clamping-to meet IEC 61000-4-2 Level 4 requirements. This is consistent with high-performance discrete MOSFET design philosophy reflected in the SQS415ENW-T1_GE3 datasheet.
What is the single-pulse avalanche energy rating for SQS415ENW-T1_GE3, and how is it verified?
The SQS415ENW-T1_GE3 has a guaranteed single-pulse avalanche energy rating of 31.2 mJ, measured under L = 0.1 mH, IAS = -25 A conditions. This value is confirmed through 100 % production UIS (unclamped inductive switching) testing per Vishay's quality protocol-ensuring each SQS415ENW-T1_GE3 unit can safely absorb inductive energy spikes common in automotive solenoid and motor control applications.
Can SQS415ENW-T1_GE3 be manually reworked using a soldering iron?
No, manual soldering with a soldering iron is not recommended for SQS415ENW-T1_GE3 due to its PowerPAK 1212-8W leadless construction. Vishay explicitly advises reflow-only assembly (per doc# 73257) to ensure uniform heating of all eight terminals and avoid thermal stress cracking or voided solder joints. Attempting hand-soldering risks damage to the SQS415ENW-T1_GE3 package and compromises AEC-Q101 reliability validation.
SQS415ENW-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8W
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16.1mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 82 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4825 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 62.5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8W
SQS415ENW-T1_GE3 FAQ
1.How can I place an order for SQS415ENW-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS415ENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS415ENW-T1_GE3 reliable?
The price and inventory of SQS415ENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS415ENW-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS415ENW-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS415ENW-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS415ENW-T1_GE3?
SQS415ENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS415ENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS415ENW-T1_GE3?
For technical support, including SQS415ENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS415ENW-T1_GE3 requirements.
6.How does Aetrix verify that SQS415ENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS415ENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS415ENW-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS415ENW-T1_GE3?
All SQS415ENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS415ENW-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS415ENW-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS415ENW-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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