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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQS420EN-T1_GE3

Name: SQS420EN-T1_GE3
Brand: Vishay Siliconix
SKU: SQS420EN-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQS420EN-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SQS420EN-T1_GE3.pdf

Description:: MOSFET N-CH 20V 8A PPAK1212-8

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Product details

Overview

SQS420EN-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 20 V drain-source voltage, 8 A continuous drain current at 25 °C and 125 °C, and 0.028 Ω R_DS(on) at V_GS = 4.5 V - optimized for high-efficiency DC-DC converter synchronous rectification in engine control units and body electronics.

For engineers reviewing the SQS420EN-T1_GE3 datasheet, SQS420EN-T1_GE3 pinout, SQS420EN-T1_GE3 application, or SQS420EN-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, PowerPAK 1212-8 leadless package thermal performance (R_thJC = 8.1 °C/W), and verified 100 % R_g and UIS testing.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: total gate charge is 9–14 nC at V_GS = 4.5 V, with turn-on delay of 8–12 ns and fall time of 8–12 ns under standard test conditions (V_DD = 10 V, R_g = 1 Ω). Its gate threshold voltage ranges from 0.45 V to 1.5 V, enabling robust operation with low-voltage logic-level drive.

The device integrates a source-drain diode with forward voltage of 0.73–1.2 V at I_F = 5 A and V_GS = 0 V, and supports pulsed avalanche energy up to 5 mJ (L = 0.1 mH). Thermal design leverages the exposed copper drain pad of the PowerPAK 1212-8 package to deliver R_thJC = 8.1 °C/W and R_thJA = 81 °C/W on 1" FR4 PCB.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients
R_DS(on) @ V_GS = 4.5 V	0.028 Ω - enables <140 mW conduction loss at 5 A, critical for thermally constrained ECUs
I_D Continuous	8 A @ T_C = 25 °C and 125 °C - sustained current capability without derating across full automotive ambient range
T_J Max	+175 °C - supports operation in under-hood environments with minimal thermal margin loss
Q_g	9–14 nC - low gate charge reduces driver power loss and enables efficient 500 kHz+ switching in buck converters
R_thJC	8.1 °C/W - direct die-to-PCB thermal path via exposed drain pad minimizes junction temperature rise
AEC-Q101	Qualified - validated for automotive reliability including temperature cycling, HTRB, and UIS stress

Pinout & Package

Package: PowerPAK® 1212-8 - leadless surface-mount package with 3.30 mm × 3.30 mm footprint, 1.05 mm height, and exposed copper drain pad on bottom side for enhanced thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7, 8	Drain (D)	Seven parallel drain terminals connected to internal die and exposed copper pad - primary heat dissipation path and high-current output node
4	Gate (G)	Single gate input terminal - controls channel conduction; requires ≤ ±8 V gate drive per absolute max ratings
-	Source (S)	Three dedicated source terminals (pins 1, 2, 3) - low-inductance return path for high di/dt switching currents

Key Features

Feature	Design Value
TrenchFET® Technology	Enables 0.028 Ω R_DS(on) at 4.5 V drive while maintaining ruggedness against repetitive avalanche events
AEC-Q101 Qualified	Validated for automotive use with zero defects in HTGB, TC, and H3TRB tests per JESD47 requirements
100 % R_g and UIS Tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - no field failures due to latent parametric drift
PowerPAK 1212-8 Package	Delivers 20× lower R_thJA than TSSOP-8 and 10× better thermal performance than SO-8 in same footprint class
Halogen-Free & RoHS	Complies with IEC 61249-2-21 and Directive 2002/95/EC - suitable for global automotive supply chains with strict material restrictions

Applications

Engine Control Unit (ECU) Synchronous Rectifier	Body Control Module (BCM) Load Switch
Use Scenario: High-side switch in 12 V input buck converter supplying 3.3 V/5 V rails to microcontroller and CAN transceivers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction losses and improve efficiency above 85 %. Use Value: 0.028 Ω R_DS(on) cuts rectifier loss by >60 % vs. 40 V Schottky, enabling smaller heatsink and higher power density in confined ECU housing.	Use Scenario: Solid-state replacement for electromechanical relay controlling HVAC blower motor or headlight circuits. IC Role / Device Role / Timing Role: N-channel high-side load switch with integrated charge pump or external bootstrap circuit for 12 V rail control. Use Value: 175 °C rating ensures reliable operation during prolonged 85 °C under-hood ambient exposure, eliminating thermal shutdown in BCM modules.
Advanced Driver Assistance Systems (ADAS) Camera Power Supply	Electric Power Steering (EPS) Motor Gate Driver Stage
Use Scenario: Input stage of dual-phase buck converter powering image sensor and ISP in rear-view camera module. IC Role / Device Role / Timing Role: Primary switching FET in high-frequency (1 MHz) power stage requiring low Q_g and fast turn-off. Use Value: 9–14 nC Q_g and 21–32 ns t_d(off) enable clean 1 MHz switching with <5 % dead-time penalty, reducing output ripple and EMI filtering cost.	Use Scenario: Half-bridge low-side switch in three-phase inverter driving 24 V EPS motor with peak currents up to 32 A. IC Role / Device Role / Timing Role: Robust low-side switch handling pulsed drain current (I_DM = 32 A) and avalanche energy (E_AS = 5 mJ). Use Value: 100 % UIS tested and 5 mJ single-pulse avalanche rating prevent failure during motor phase commutation transients and regenerative braking spikes.

Engine Control Unit (ECU) Synchronous Rectifier

Body Control Module (BCM) Load Switch

Use Scenario: High-side switch in 12 V input buck converter supplying 3.3 V/5 V rails to microcontroller and CAN transceivers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction losses and improve efficiency above 85 %.

Use Value: 0.028 Ω R_DS(on) cuts rectifier loss by >60 % vs. 40 V Schottky, enabling smaller heatsink and higher power density in confined ECU housing.

Use Scenario: Solid-state replacement for electromechanical relay controlling HVAC blower motor or headlight circuits.

IC Role / Device Role / Timing Role: N-channel high-side load switch with integrated charge pump or external bootstrap circuit for 12 V rail control.

Use Value: 175 °C rating ensures reliable operation during prolonged 85 °C under-hood ambient exposure, eliminating thermal shutdown in BCM modules.

Advanced Driver Assistance Systems (ADAS) Camera Power Supply

Electric Power Steering (EPS) Motor Gate Driver Stage

Use Scenario: Input stage of dual-phase buck converter powering image sensor and ISP in rear-view camera module.

IC Role / Device Role / Timing Role: Primary switching FET in high-frequency (1 MHz) power stage requiring low Q_g and fast turn-off.

Use Value: 9–14 nC Q_g and 21–32 ns t_d(off) enable clean 1 MHz switching with <5 % dead-time penalty, reducing output ripple and EMI filtering cost.

Use Scenario: Half-bridge low-side switch in three-phase inverter driving 24 V EPS motor with peak currents up to 32 A.

IC Role / Device Role / Timing Role: Robust low-side switch handling pulsed drain current (I_DM = 32 A) and avalanche energy (E_AS = 5 mJ).

Use Value: 100 % UIS tested and 5 mJ single-pulse avalanche rating prevent failure during motor phase commutation transients and regenerative braking spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiL320DP-T1-GE3	R_DS(on) = 0.025 Ω @ 4.5 V, but rated only to 155 °C TJ and not AEC-Q101 qualified	Lacks automotive qualification; suitable for industrial/commercial DC-DC where 175 °C is not required	Select when cost sensitivity outweighs automotive reliability requirements and thermal margin is ≥20 °C
IRLML6344TRPBF	R_DS(on) = 0.035 Ω @ 4.5 V, TO-236 package with R_thJA = 200 °C/W - significantly higher thermal resistance	Lower power density; limited to <2 W continuous dissipation without large copper pour	Choose only for prototyping or low-power (<3 A) applications where board space allows larger thermal relief

Compared with SiL320DP-T1-GE3 and IRLML6344TRPBF, SQS420EN-T1_GE3 delivers superior automotive reliability (AEC-Q101 + 175 °C), lower R_DS(on), and best-in-class thermal performance (R_thJC = 8.1 °C/W), making it the optimal choice for production ECU, BCM, and ADAS power stages demanding long-term under-hood stability.

Availability

SQS420EN-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, body control modules, and advanced driver assistance systems requiring stable component supply across automotive production lifecycles.

Supply support for SQS420EN-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics with focus on power efficiency, reliability, and miniaturization.

The SQS420EN-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® Power MOSFET family, engineered specifically for high-reliability 12 V system power conversion and load switching in harsh under-hood environments.

FAQ

What is the maximum gate-source voltage rating for SQS420EN-T1_GE3?

The absolute maximum gate-source voltage (V_GS) for SQS420EN-T1_GE3 is ±8 V, as specified in the Absolute Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. For reliable operation, gate drive circuits must clamp V_GS within this range - especially during transient events such as hot-plug or shoot-through conditions. The SQS420EN-T1_GE3 gate threshold voltage (0.45–1.5 V) allows safe operation with 3.3 V or 5 V logic-level drivers when properly decoupled.

Is SQS420EN-T1_GE3 suitable for high-frequency switching applications like 1 MHz DC-DC converters?

Yes, SQS420EN-T1_GE3 supports high-frequency operation up to 1 MHz due to its low total gate charge (9–14 nC) and fast switching times: turn-on delay 8–12 ns, rise time 8–12 ns, turn-off delay 21–32 ns, and fall time 8–12 ns. These parameters were measured under standardized conditions (V_DD = 10 V, R_g = 1 Ω), confirming suitability for compact, high-efficiency buck converters. The SQS420EN-T1_GE3 also exhibits low C_iss (392–490 pF) and C_rss (40–50 pF), minimizing Miller effect and improving controllability at elevated frequencies.

How does the PowerPAK 1212-8 package of SQS420EN-T1_GE3 improve thermal performance compared to SO-8?

The PowerPAK 1212-8 package of SQS420EN-T1_GE3 achieves R_thJC = 8.1 °C/W - over 2× better than typical SO-8 packages (~18–20 °C/W) - by exposing the drain pad directly to the PCB copper. This eliminates thermal bottlenecks from leadframe plating and solder joint resistance. On a 1" FR4 board, R_thJA is 81 °C/W versus ~150 °C/W for SO-8. As a result, the SQS420EN-T1_GE3 junction temperature rises only ~4.8 °C above board temperature at 2 W dissipation, preserving R_DS(on) stability and enabling higher current density in space-constrained automotive modules.

Does SQS420EN-T1_GE3 include integrated protection features such as overtemperature shutdown?

No, SQS420EN-T1_GE3 is a discrete N-channel MOSFET without integrated thermal shutdown, overcurrent, or short-circuit protection circuitry. It relies on external system-level protection - such as current-sense amplifiers, microcontroller-based fault detection, or dedicated gate drivers with desaturation sensing - to manage overload, short-circuit, or overtemperature conditions. The SQS420EN-T1_GE3 does feature 100 % UIS (unclamped inductive switching) testing and 5 mJ avalanche energy rating, providing inherent ruggedness against transient overvoltage events during inductive load switching.

Can SQS420EN-T1_GE3 be used in high-side switch configurations?

Yes, SQS420EN-T1_GE3 can be used in high-side switch configurations, but requires appropriate gate drive architecture - such as a charge pump or bootstrap circuit - to ensure V_GS remains ≥4.5 V relative to the source when the source is at elevated potential. Its 20 V V_DS rating and 8 A continuous current capability make it suitable for 12 V automotive high-side loads like fuel pumps or radiator fans. However, layout must minimize source inductance and gate loop area to prevent oscillation, and the SQS420EN-T1_GE3 gate threshold (0.45–1.5 V) demands careful noise immunity design to avoid unintended turn-on during transients.

SQS420EN-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 28mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 490 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 18W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SQS420EN-T1_GE3 FAQ

1.How can I place an order for SQS420EN-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQS420EN-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQS420EN-T1_GE3 reliable?

The price and inventory of SQS420EN-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS420EN-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQS420EN-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS420EN-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQS420EN-T1_GE3?

SQS420EN-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQS420EN-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQS420EN-T1_GE3?

For technical support, including SQS420EN-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS420EN-T1_GE3 requirements.

6.How does Aetrix verify that SQS420EN-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQS420EN-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS420EN-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQS420EN-T1_GE3?

All SQS420EN-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS420EN-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQS420EN-T1_GE3 part is unused and in its original packaging.

Return procedure for SQS420EN-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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