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Vishay Siliconix SQS423EN-T1_GE3
- Part No.:
- SQS423EN-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SQS423EN-T1_GE3.pdf
- Description:
- MOSFET P-CH 30V 16A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,615
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Product details
Overview
SQS423EN-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in PowerPAK® 1212-8 package, rated for -30 V drain-source voltage, 0.021 Ω RDS(on) at VGS = -10 V, and continuous drain current of -16 A at TC = 25 °C. It serves as a high-efficiency high-side load switch in 12 V automotive power distribution systems.
For engineers reviewing the SQS423EN-T1_GE3 datasheet, SQS423EN-T1_GE3 pinout, SQS423EN-T1_GE3 application, or SQS423EN-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, ultra-low thermal resistance (RthJC = 2.4 °C/W), and robust avalanche energy rating (EAS = 24 mJ).
Technical Context
This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with total gate charge of 17–26 nC at VGS = -4.5 V. Its gate threshold voltage range (-1.5 V to -2.5 V) ensures reliable turn-on in 3.3 V and 5 V logic-controlled automotive circuits.
The device integrates a body diode with forward voltage of -0.8 V to -1.2 V at -8.8 A and supports synchronous rectification in buck converters. Its PowerPAK 1212-8 package provides exposed-drain thermal path and achieves junction-to-ambient thermal resistance of 81 °C/W on standard FR4 PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum reverse-blocking capability for 12 V automotive battery systems with load dump transients. |
| RDS(on) @ VGS = -10 V | 0.021 Ω - Enables <1.3 W conduction loss at -16 A, critical for thermally constrained ECUs. |
| RDS(on) @ VGS = -4.5 V | 0.060 Ω - Ensures functional operation with 5 V gate drive, supporting legacy microcontroller interfaces. |
| ID Continuous | -16 A @ TC = 25 °C - Sustains full-load current without derating when mounted on ≥1"² copper area. |
| EAS | 24 mJ - Withstands single-pulse inductive energy during relay coil de-energization or motor commutation. |
| TJ max | +175 °C - Meets under-hood temperature requirements for engine control modules and transmission controllers. |
| Qg | 17–26 nC - Enables fast switching (td(on) ≤ 100 ns) while minimizing gate driver power consumption. |
Pinout & Package
PowerPAK® 1212-8 is a leadless surface-mount package with 8 terminals: four drain pads (D), one gate (G), and three source (S) terminals. The exposed bottom-side drain pad provides primary thermal conduction path to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 5, S | Source | Common source node for internal die; connects to ground or low-side return path. |
| 4, G | Gate | Control input; requires ≤±20 V drive; gate resistance 1.6–6 Ω affects switching speed and ringing. |
| 2, 3, 6, 7, 8, D | Drain | High-side power input; all four drain pads and bottom thermal pad are electrically connected and must be soldered to same net. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD HBM ≥2 kV. |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness. |
| Exposed-drain thermal design | RthJC = 2.4 °C/W enables direct heat transfer from die to PCB, reducing junction temperature rise by >40 °C vs. SO-8. |
| TrenchFET® architecture | Optimized cell layout delivers 3× lower RDS(on) × Qg figure-of-merit than planar P-channel MOSFETs. |
| 175 °C operation | Rated for continuous operation up to +175 °C junction temperature, enabling placement near heat sources. |
Applications
| Body Control Module (BCM) | Engine Control Unit (ECU) |
|---|---|
|
Use Scenario: High-side switching of fuel pump, radiator fan, or headlight relays in 12 V vehicle electrical architecture. IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch; controlled by microcontroller GPIO with active-low logic. Use Value: Low RDS(on) minimizes voltage drop and self-heating during sustained 10–15 A loads; AEC-Q101 ensures reliability over 15-year vehicle lifetime. |
Use Scenario: Power sequencing and fault-isolation of sensors (e.g., MAP, O2) and actuators (e.g., injectors, VVT solenoids). IC Role / Device Role / Timing Role: High-side protection switch placed between battery rail and downstream LDO or DC/DC converter input. Use Value: 175 °C rating allows integration into compact ECU housings; avalanche energy rating protects against inductive kickback from solenoid drivers. |
| Transmission Control Module (TCM) | Advanced Driver Assistance Systems (ADAS) |
|
Use Scenario: Clutch and torque converter solenoid control in automatic transmissions with PWM-driven current regulation. IC Role / Device Role / Timing Role: Switching element in high-side current sink configuration; body diode conducts freewheeling current during PWM off-time. Use Value: VSD = -0.8 to -1.2 V at -8.8 A reduces freewheeling losses; low Ciss (1575–1975 pF) enables clean 20 kHz PWM edges. |
Use Scenario: Power management for radar modules, camera ISPs, and domain controllers requiring rapid on/off cycling. IC Role / Device Role / Timing Role: Hot-swap enable switch for subsystem power domains; supports controlled inrush current via gate slew rate limiting. Use Value: Fast turn-on delay (≤100 ns) and rise time (≤65 ns) allow precise timing alignment with system power-up sequences; Rg spec enables predictable gate drive design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPbF | TO-220 package; RDS(on) = 0.3 Ω @ -10 V; 100× higher on-resistance; no AEC-Q101 qualification. | Not suitable for space-constrained or automotive-qualified designs; limited to industrial bench testing. | Select only if through-hole mounting and legacy footprint compatibility are mandatory. |
| DMT6009LPS-13 | PowerDI™ 5060 package; RDS(on) = 0.009 Ω @ -10 V; higher current rating (-30 A); same AEC-Q101 and 175 °C rating. | Better thermal performance but larger footprint (5.0 × 6.0 mm vs. 3.3 × 3.3 mm); requires PCB redesign. | Choose when lower conduction loss is critical and board area permits larger package. |
Compared with IRF9530NPbF, SQS423EN-T1_GE3 delivers 93 % lower RDS(on) and automotive qualification; compared with DMT6009LPS-13, it offers 30 % smaller footprint with acceptable trade-off in on-resistance for cost-sensitive BCM applications.
Availability
SQS423EN-T1_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, engine control units, transmission control modules, and ADAS power domains requiring stable component supply across multi-year production cycles.
Supply support for SQS423EN-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS423EN-T1_GE3 belongs to Vishay's automotive-qualified PowerPAK® 1212-8 MOSFET family, engineered for high-density, thermally demanding power switching in engine bays and electronic control units.
FAQ
What is the maximum gate-source voltage rating for SQS423EN-T1_GE3?
The absolute maximum gate-source voltage for SQS423EN-T1_GE3 is ±20 V. Exceeding this rating risks permanent gate oxide damage. In practice, gate drive should be limited to -10 V for full enhancement and -4.5 V for logic-level compatibility, both well within safe operating limits. The device's gate leakage remains below ±100 nA at ±20 V, confirming robust gate insulation integrity in SQS423EN-T1_GE3.
Does SQS423EN-T1_GE3 require a gate resistor in series with the driver?
Yes, a gate resistor is recommended for SQS423EN-T1_GE3 to control dV/dt and suppress ringing during switching transitions. The datasheet specifies gate resistance Rg = 1.6–6 Ω, and typical evaluation circuits use 2.2–10 Ω resistors. This limits peak gate current, reduces EMI, and prevents overshoot that could trigger parasitic turn-on. Proper gate resistor selection directly impacts switching losses and electromagnetic compatibility in SQS423EN-T1_GE3 applications.
How does the PowerPAK 1212-8 package improve thermal performance versus SO-8?
The PowerPAK 1212-8 package in SQS423EN-T1_GE3 achieves RthJC = 2.4 °C/W-nearly 10× better than standard SO-8 (≈20 °C/W)-by exposing the drain pad on the bottom surface for direct PCB thermal coupling. Its compact 3.3 mm × 3.3 mm footprint also allows denser layouts while maintaining superior heat dissipation. This enables SQS423EN-T1_GE3 to sustain -16 A continuously where SO-8 equivalents would thermally throttle or require heatsinks.
Is SQS423EN-T1_GE3 suitable for reverse polarity protection?
Yes, SQS423EN-T1_GE3 is commonly used for reverse polarity protection in automotive 12 V systems. Its P-channel configuration allows placement in the high-side rail, blocking reverse current when battery terminals are swapped. With VDS = -30 V and low RDS(on), it introduces minimal voltage drop (<0.3 V at 10 A) and dissipates less than 3 W under fault conditions. Its AEC-Q101 qualification and 175 °C rating make SQS423EN-T1_GE3 ideal for under-hood reverse protection circuits.
What is the avalanche energy rating of SQS423EN-T1_GE3 and how is it validated?
SQS423EN-T1_GE3 is rated for 24 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH. This rating is verified per JEDEC JESD24-11 using unclamped inductive switching (UIS) tests on 100 % of production units. The parameter ensures robustness against inductive kickback from solenoids, motors, and relays-critical in automotive power distribution. EAS remains valid across the full -55 °C to +175 °C operating range, confirming consistent ruggedness in SQS423EN-T1_GE3.
SQS423EN-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1975 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 62.5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SQS423EN-T1_GE3 FAQ
1.How can I place an order for SQS423EN-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS423EN-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS423EN-T1_GE3 reliable?
The price and inventory of SQS423EN-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS423EN-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS423EN-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS423EN-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS423EN-T1_GE3?
SQS423EN-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS423EN-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS423EN-T1_GE3?
For technical support, including SQS423EN-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS423EN-T1_GE3 requirements.
6.How does Aetrix verify that SQS423EN-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS423EN-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS423EN-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS423EN-T1_GE3?
All SQS423EN-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS423EN-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS423EN-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS423EN-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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