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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQS423ENW-T1_GE3

Name: SQS423ENW-T1_GE3
Brand: Vishay Siliconix
SKU: SQS423ENW-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQS423ENW-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8W

Datasheet:: SQS423ENW-T1_GE3.pdf

Description:: MOSFET P-CH 30V 16A PPAK 1212-8W

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Product details

Overview

SQS423ENW-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET rated for -30 V drain-source voltage, 0.021 Ω R_DS(on) at V_GS = -10 V, and -16 A continuous drain current at T_C = 25 °C. It operates up to +175 °C junction temperature and is used in high-reliability load switching for automotive body electronics.

For engineers reviewing the SQS423ENW-T1_GE3 datasheet, SQS423ENW-T1_GE3 pinout, SQS423ENW-T1_GE3 application, or SQS423ENW-T1_GE3 equivalent, key selection criteria include AEC-Q101 qualification, PowerPAK 1212-8W leadless package thermal performance, -1.5 V to -2.5 V gate threshold, and 100 % R_g and UIS testing for robustness in automotive transients.

Technical Context

This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with 17 nC typical total gate charge and 2.4 °C/W junction-to-case thermal resistance. Its gate threshold voltage range (-1.5 V to -2.5 V) ensures reliable turn-on with standard automotive logic-level drive.

The device supports unidirectional load switching in high-side configurations, with a source-drain diode forward voltage of -0.8 V to -1.2 V at -8.8 A and single-pulse avalanche energy rating of 24 mJ - critical for inductive load handling in 12 V vehicle systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for 12 V automotive battery rail with margin against load dump transients
R_DS(on) @ V_GS = -10 V	0.021 Ω - Enables <1 W conduction loss at 7 A, supporting thermally constrained PCB layouts
I_D (continuous)	-16 A @ T_C = 25 °C - Sustains high-current loads like seat motors or HVAC actuators without derating
T_J max	+175 °C - Meets under-hood temperature requirements per AEC-Q101 stress test conditions
Q_g (total)	17 nC typical - Supports efficient PWM control at frequencies up to 100 kHz with minimal driver power
R_thJC	2.4 °C/W - Enables direct thermal coupling to heatsink or copper pour for high-power density designs
E_AS	24 mJ - Absorbs inductive kickback from solenoids or relays without external snubbers

Pinout & Package

Package: PowerPAK® 1212-8W - 3.3 mm × 3.3 mm leadless surface-mount package with exposed drain paddle for low thermal resistance and high power density.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5	Source (S)	Four parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt switching
4	Gate (G)	Single gate input with 1.6–6 Ω gate resistance - optimized for EMI control and driver stability
6, 7, 8	Drain (D)	Three drain terminals connected to exposed bottom paddle - primary thermal and current path to PCB copper

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including temperature cycling, HTRB, and UHAST per Rev. D requirements
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness
TrenchFET® process	Enables 30 % lower R_DS(on) vs. planar P-channel MOSFETs at same die size and voltage rating
PowerPAK 1212-8W package	Reduces footprint by 50 % vs. SO-8 while delivering 2.5× lower R_thJA (81 °C/W) on 1"² FR4 PCB
175 °C operation	Supports placement near heat sources (e.g., ECUs, motor drivers) without thermal derating penalties

Applications

Body Control Module Load Switching	Automotive HVAC Blower Control
Use Scenario: High-side switching of 12 V DC loads such as door locks, mirror heaters, and interior lighting in BCMs. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by microcontroller GPIO via level-shifting circuitry. Use Value: Low 0.021 Ω R_DS(on) minimizes power loss and self-heating during continuous 10 A operation in confined BCM enclosures.	Use Scenario: PWM-controlled blower motor driver in climate control systems requiring variable speed and reverse polarity protection. IC Role / Device Role / Timing Role: High-side switch enabling bidirectional current blocking and fast PWM commutation at 20–50 kHz. Use Value: 24 mJ avalanche energy rating safely clamps back-EMF during motor stall or rapid deceleration without external components.
Seat Position Actuator Driver	Engine Bay Solenoid Interface
Use Scenario: Driving linear actuators for power seat adjustment, where intermittent high-torque pulses demand surge current capability. IC Role / Device Role / Timing Role: Load switch activated by LIN bus controller with overcurrent detection feedback loop. Use Value: -64 A pulsed drain current rating supports 3× peak torque surges without thermal runaway at 175 °C ambient.	Use Scenario: Controlling fuel injector solenoids or turbocharger wastegate actuators exposed to under-hood temperatures above 125 °C. IC Role / Device Role / Timing Role: High-reliability high-side driver with integrated avalanche ruggedness and AEC-Q101 traceability. Use Value: +175 °C rated junction temperature and 100 % UIS testing ensure functional safety compliance in ASIL-B systems.

Body Control Module Load Switching

Automotive HVAC Blower Control

Use Scenario: High-side switching of 12 V DC loads such as door locks, mirror heaters, and interior lighting in BCMs.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by microcontroller GPIO via level-shifting circuitry.

Use Value: Low 0.021 Ω R_DS(on) minimizes power loss and self-heating during continuous 10 A operation in confined BCM enclosures.

Use Scenario: PWM-controlled blower motor driver in climate control systems requiring variable speed and reverse polarity protection.

IC Role / Device Role / Timing Role: High-side switch enabling bidirectional current blocking and fast PWM commutation at 20–50 kHz.

Use Value: 24 mJ avalanche energy rating safely clamps back-EMF during motor stall or rapid deceleration without external components.

Seat Position Actuator Driver

Engine Bay Solenoid Interface

Use Scenario: Driving linear actuators for power seat adjustment, where intermittent high-torque pulses demand surge current capability.

IC Role / Device Role / Timing Role: Load switch activated by LIN bus controller with overcurrent detection feedback loop.

Use Value: -64 A pulsed drain current rating supports 3× peak torque surges without thermal runaway at 175 °C ambient.

Use Scenario: Controlling fuel injector solenoids or turbocharger wastegate actuators exposed to under-hood temperatures above 125 °C.

IC Role / Device Role / Timing Role: High-reliability high-side driver with integrated avalanche ruggedness and AEC-Q101 traceability.

Use Value: +175 °C rated junction temperature and 100 % UIS testing ensure functional safety compliance in ASIL-B systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPBF	TO-220 package, higher R_DS(on) (0.3 Ω), no AEC-Q101 qualification, 150 °C T_J max	General-purpose industrial switching only - unsuitable for automotive under-hood use	Select only for cost-sensitive non-automotive prototypes with ample heatsinking and ambient <85 °C
DMT6009LPS-13	PowerDI 5060 package, 0.009 Ω R_DS(on), -60 V rating, AEC-Q101 qualified, but larger 5.0 mm × 6.0 mm footprint	Better conduction efficiency but requires PCB area increase and different thermal layout	Choose when lower on-resistance is critical and board space allows larger package; verify gate drive compatibility with -4.5 V logic

Compared with IRF9530NPBF and DMT6009LPS-13, SQS423ENW-T1_GE3 delivers optimal balance of automotive qualification, compact 3.3 mm × 3.3 mm footprint, and 0.021 Ω on-resistance - making it ideal for space-constrained, thermally demanding automotive modules where AEC-Q101 compliance is mandatory.

Availability

SQS423ENW-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, HVAC control systems, and seat actuator modules requiring stable component supply across extended production lifecycles.

Supply support for SQS423ENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQS423ENW-T1_GE3 belongs to Vishay's AEC-Q101-qualified TrenchFET® PowerPAK® portfolio, engineered specifically for high-reliability, high-density automotive power switching in thermally aggressive environments.

FAQ

What is the maximum junction temperature rating for SQS423ENW-T1_GE3?

The SQS423ENW-T1_GE3 has a maximum operating junction temperature of +175 °C, validated per AEC-Q101 stress test conditions. This rating enables deployment in under-hood locations such as engine control units and transmission control modules where ambient temperatures exceed 125 °C. The device maintains specified R_DS(on) and switching parameters across its full -55 °C to +175 °C operating range.

Is SQS423ENW-T1_GE3 qualified to AEC-Q101 standards?

Yes, SQS423ENW-T1_GE3 is fully AEC-Q101 qualified. Vishay Siliconix subjects this part to temperature cycling, high-temperature reverse bias (HTRB), and unclamped inductive switching (UIS) tests per AEC-Q101 Rev. D. Qualification documentation, including test reports and reliability data, is available under document number 75549 on the Vishay website.

What is the gate threshold voltage range for SQS423ENW-T1_GE3?

The gate threshold voltage (V_GS(th)) for SQS423ENW-T1_GE3 is specified from -1.5 V to -2.5 V at I_D = -250 μA. This range ensures consistent turn-on behavior with standard 3.3 V or 5 V microcontroller outputs when used with appropriate gate pull-up networks, supporting reliable high-side switching in automotive logic interfaces.

Does SQS423ENW-T1_GE3 have avalanche capability?

Yes, SQS423ENW-T1_GE3 is rated for single-pulse avalanche energy (E_AS) of 24 mJ with L = 0.1 mH. This capability allows safe operation during inductive load switching events such as motor stall or solenoid de-energization without requiring external snubber circuits - a key requirement for automotive power distribution systems.

What is the thermal resistance from junction to case for SQS423ENW-T1_GE3?

The junction-to-case (drain) thermal resistance (R_thJC) for SQS423ENW-T1_GE3 is 2.4 °C/W. This low value reflects the PowerPAK 1212-8W package's exposed drain paddle design, which provides a direct thermal path to the PCB copper or external heatsink - essential for maintaining safe junction temperatures in high-current automotive applications.

SQS423ENW-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8W

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 21mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1975 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8W

SQS423ENW-T1_GE3 FAQ

1.How can I place an order for SQS423ENW-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQS423ENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQS423ENW-T1_GE3 reliable?

The price and inventory of SQS423ENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS423ENW-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQS423ENW-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS423ENW-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQS423ENW-T1_GE3?

SQS423ENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQS423ENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQS423ENW-T1_GE3?

For technical support, including SQS423ENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS423ENW-T1_GE3 requirements.

6.How does Aetrix verify that SQS423ENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQS423ENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS423ENW-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQS423ENW-T1_GE3?

All SQS423ENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS423ENW-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQS423ENW-T1_GE3 part is unused and in its original packaging.

Return procedure for SQS423ENW-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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