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Vishay Siliconix SQS460CENW-T1_GE3
- Part No.:
- SQS460CENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8W
- Datasheet:
-
SQS460CENW-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 60 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:5,725
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Product details
Overview
SQS460CENW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 8 A continuous drain current at 25 °C and 125 °C, and 0.030 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, serving as a high-reliability switching element in engine control units and DC-DC converters.
For engineers reviewing the SQS460CENW-T1_GE3 datasheet, SQS460CENW-T1_GE3 pinout, SQS460CENW-T1_GE3 application, or SQS460CENW-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values, gate charge metrics, body diode characteristics, and validated alternative parts for automotive power design validation.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V automotive systems. Its PowerPAK 1212-8W package integrates four source terminals and four drain terminals to reduce package inductance and improve current sharing under pulsed loads.
The device features a 100 % Rg and UIS tested structure with guaranteed avalanche energy rating (EAS = 9.11 mJ) and reverse recovery performance (trr = 15–30 ns, Qrr = 8–16 nC), enabling robust operation in inductive load switching and synchronous rectification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V automotive architectures and transient overvoltage tolerance per ISO 7637-2. |
| RDS(on) @ VGS = 10 V | 0.030 Ω - Enables ≤ 1.92 W conduction loss at 8 A, supporting thermally constrained PCB layouts. |
| Qg | 7.2–11 nC - Low gate charge supports efficient PWM drive with standard gate drivers at ≥100 kHz switching frequencies. |
| EAS | 9.11 mJ - Confirmed single-pulse avalanche capability allows safe operation during inductive turn-off without external snubbers. |
| RthJC | 5.5 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for high-power density designs. |
| ID (pulsed) | 32 A - Supports peak motor startup currents and short-circuit fault handling in safety-critical subsystems. |
| VSD | 0.845–1.1 V - Body diode forward voltage at 6 A ensures low-loss freewheeling in half-bridge configurations. |
Pinout & Package
Package: PowerPAK® 1212-8W - 3.3 mm × 3.3 mm surface-mount package with exposed drain paddle for enhanced thermal dissipation and four parallel source/drain terminals to minimize parasitic inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Source (S) | Four low-inductance source connections reduce common-source inductance and improve switching stability in high-dI/dt applications. |
| 4 | Gate (G) | Single gate input with Rg = 0.63–1.90 Ω - supports direct drive from microcontroller GPIO or dedicated gate drivers without external series resistance. |
| 6, 7, 8, D-Pad | Drain (D) | Four drain terminals plus bottom-exposed copper paddle provide low-resistance current path and thermal conduction to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use across -55 °C to +175 °C operating range with zero defects in HTOL, TC, and UHAST stress tests. |
| TrenchFET® architecture | Enables 24% lower RDS(on) vs. planar MOSFETs at same die size, improving power efficiency in space-constrained ECUs. |
| 100 % Rg and UIS testing | Each unit undergoes production-level gate resistance screening and unclamped inductive switching validation for field reliability. |
| Low Ciss/Coss ratio | Ciss = 493–580 pF, Coss = 226–290 pF - improves hard-switching efficiency and reduces EMI generation in buck regulators. |
| Exposed drain paddle | Thermal interface to PCB provides 5.5 °C/W RthJC, enabling >2× power handling vs. SO-8 equivalents at same footprint. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-speed switching of 12 V fuel injectors with 2 ms on-time and 100 kHz PWM modulation. IC Role / Device Role / Timing Role: Main power switch controlling solenoid actuation via low-side configuration with precise current limiting. Use Value: 0.030 Ω RDS(on) minimizes injector coil heating; 32 A pulsed rating handles cold-start surge currents without derating. |
Use Scenario: Primary-side switch in 12 V to 5 V/3.3 V synchronous buck converter for ADAS camera modules. IC Role / Device Role / Timing Role: High-frequency (500 kHz) hard-switched power transistor with integrated body diode for freewheeling. Use Value: 9.11 mJ EAS withstands output short-circuit events; 15–30 ns trr reduces cross-conduction losses in synchronous rectification. |
| Electric Power Steering (EPS) Motor Phase Leg | Automotive LED Headlamp Dimming Circuit |
Use Scenario: Half-bridge phase leg in 48 V EPS motor driver delivering 20 A peak phase current. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter with active freewheeling via body diode. Use Value: 175 °C max junction temperature supports sealed motor housing environments; 81 °C/W RthJA enables convection-only cooling on 1" FR4 PCB. |
Use Scenario: PWM-controlled current sink for high-brightness LED strings in adaptive front lighting systems. IC Role / Device Role / Timing Role: Precision current-regulated switch with fast turn-on/off for flicker-free dimming at 1–2 kHz. Use Value: 7.2–11 nC Qg ensures <14 ns td(on) and <24 ns td(off), eliminating visible LED strobing during dynamic beam shaping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PbF | Higher RDS(on) (0.055 Ω @ 10 V), TO-220 package, no AEC-Q101 qualification | Limited to non-safety-critical industrial use; unsuitable for under-hood automotive deployment | Select only for cost-sensitive non-automotive prototypes where thermal margin exceeds 40 °C. |
| STL100N6LF6 | Lower RDS(on) (0.0085 Ω @ 10 V), PowerFLAT 5x6 package, AEC-Q101 qualified | Better conduction efficiency but higher Ciss (1400 pF) limits switching speed above 200 kHz | Prefer for high-current, low-frequency (<100 kHz) motor drives where thermal budget dominates switching loss. |
Compared with IRF4905PbF and STL100N6LF6, SQS460CENW-T1_GE3 delivers optimal balance of low RDS(on), moderate gate charge, and AEC-Q101 compliance in a thermally efficient 3.3 mm × 3.3 mm footprint-making it ideal for space-constrained, high-reliability 12 V/48 V automotive power stages.
Availability
SQS460CENW-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for SQS460CENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS460CENW-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-reliability switching in engine bay and chassis-mounted electronic control modules.
FAQ
What is the maximum junction temperature rating for SQS460CENW-T1_GE3?
The SQS460CENW-T1_GE3 has a specified operating junction temperature range of -55 °C to +175 °C. This rating is validated per AEC-Q101 stress test conditions and applies to continuous operation under absolute maximum ratings. The device maintains stable RDS(on) performance up to 175 °C, with normalized on-resistance rising to 1.9× its 25 °C value at full temperature limit, as confirmed in the datasheet's "On-Resistance vs. Junction Temperature" graph.
Is SQS460CENW-T1_GE3 suitable for synchronous rectification in automotive DC-DC converters?
Yes, SQS460CENW-T1_GE3 is well-suited for synchronous rectification due to its low RDS(on) (0.030 Ω @ 10 V), fast body diode recovery (trr = 15–30 ns), and low Qrr (8–16 nC). These characteristics minimize conduction and switching losses when used as the low-side switch in buck or flyback topologies. Its 175 °C rating also supports reliable operation in thermally dense converter modules near engine compartments.
Does SQS460CENW-T1_GE3 require a gate resistor for standard microcontroller drive?
SQS460CENW-T1_GE3 can be driven directly by most 3.3 V or 5 V microcontroller GPIO pins without an external gate resistor in low-frequency (<10 kHz) applications, thanks to its low gate charge (7.2–11 nC) and internal Rg (0.63–1.90 Ω). For PWM frequencies above 100 kHz or high-noise environments, a 5–10 Ω series gate resistor is recommended to damp ringing and ensure clean edge transitions-verified in Vishay's Application Note AN826.
What is the meaning of the marking code Q056 on SQS460CENW-T1_GE3?
The marking code Q056 on SQS460CENW-T1_GE3 is Vishay's internal lot- and wafer-traceable identifier, not a functional or parametric code. It corresponds to specific fabrication batch, process node, and test lot data stored in Vishay's quality database. This marking enables full traceability for automotive PPAP submissions and failure analysis but does not encode voltage rating, RDS(on), or temperature grade-those are defined solely by the full part number SQS460CENW-T1_GE3.
How does the PowerPAK 1212-8W package of SQS460CENW-T1_GE3 improve thermal performance versus SO-8?
The PowerPAK 1212-8W package of SQS460CENW-T1_GE3 achieves 5.5 °C/W junction-to-case thermal resistance-over 2× better than typical SO-8 packages (~12–15 °C/W)-due to its exposed copper drain paddle and symmetric 4-source/4-drain terminal layout. When mounted on a 1" FR4 PCB with 2 oz. copper, its RthJA is 81 °C/W, enabling 27 W power dissipation at 25 °C ambient, compared to ~12 W for SO-8 equivalents under identical conditions.
SQS460CENW-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8W
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 580 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 27W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8W
SQS460CENW-T1_GE3 FAQ
1.How can I place an order for SQS460CENW-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS460CENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS460CENW-T1_GE3 reliable?
The price and inventory of SQS460CENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS460CENW-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS460CENW-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS460CENW-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS460CENW-T1_GE3?
SQS460CENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS460CENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS460CENW-T1_GE3?
For technical support, including SQS460CENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS460CENW-T1_GE3 requirements.
6.How does Aetrix verify that SQS460CENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS460CENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS460CENW-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS460CENW-T1_GE3?
All SQS460CENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS460CENW-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS460CENW-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS460CENW-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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