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Vishay Siliconix SQS460EN-T1_BE3
- Part No.:
- SQS460EN-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SQS460EN-T1_BE3.pdf
- Description:
- MOSFET N-CH 60V 8A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:57,855
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Product details
Overview
SQS460EN-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel 60 V (D-S) MOSFET in PowerPAK® 1212-8 package, rated for continuous drain current of 8 A at TC = 25 °C, RDS(on) = 0.036 Ω at VGS = 10 V and 0.048 Ω at VGS = 4.5 V, and qualified to AEC-Q101 for under-hood power switching in engine control units and body electronics.
For engineers reviewing the SQS460EN-T1_BE3 datasheet, SQS460EN-T1_BE3 pinout, SQS460EN-T1_BE3 application, or SQS460EN-T1_BE3 equivalent, key selection criteria include its 175 °C junction temperature rating, 100 % Rg and UIS tested reliability, ultra-low thermal resistance (RthJC = 3.8 °C/W), and leadless PowerPAK 1212-8 footprint optimized for high-power density DC/DC converters and motor drivers.
Technical Context
This TrenchFET® power MOSFET uses silicon technology optimized for low RDS(on) and fast switching in 12 V automotive systems. Its gate charge profile (Qg = 13–20 nC, Qgd = 3 nC) supports efficient PWM operation in synchronous buck regulators, while the integrated source-drain diode (VSD = 0.8–1.2 V at IF = 6 A) enables freewheeling in H-bridge motor control.
The device operates across -55 °C to +175 °C junction temperature range with stable threshold voltage (VGS(th) = 1.5–2.5 V) and normalized RDS(on) variation ≤2× over full temperature range. Thermal design leverages exposed drain pad for direct PCB heat sinking, achieving RthJA = 81 °C/W on 1"² FR4 board.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage for 12 V battery rail protection and load switching |
| RDS(on) @ VGS = 10 V | 0.036 Ω - Enables <1 W conduction loss at 5.3 A, critical for thermally constrained ECUs |
| RDS(on) @ VGS = 4.5 V | 0.048 Ω - Ensures robust turn-on with standard 3.3 V or 5 V logic-level gate drivers |
| ID (continuous) | 8 A - Sustains peak load currents in HVAC actuators and fuel pump drivers without derating |
| Junction temp. range | -55 to +175 °C - Certified for under-hood placement in engine management modules |
| RthJC | 3.8 °C/W - Direct thermal path from die to PCB enables >30 W power dissipation with minimal heatsink |
| Qg / Qgd | 13–20 nC / 3 nC - Low gate drive energy reduces controller loading and switching losses in 200–500 kHz SMPS |
Pinout & Package
PowerPAK® 1212-8 is a leadless surface-mount package with 3.3 mm × 3.3 mm footprint, 1.05 mm height, and exposed drain pad on bottom side for thermal and electrical connection. The top-side terminals are arranged in single-row configuration with G, S, D assignments verified per Vishay's official top-view diagram.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 | Drain (D) | Exposed copper drain pad on bottom provides primary thermal path and low-inductance power return |
| 4 (top-side) | Gate (G) | Single gate terminal located adjacent to source for minimized gate loop inductance and EMI reduction |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, humidity bias, and mechanical shock per JESD47 |
| 100 % Rg and UIS testing | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® structure | Enables lower RDS(on) and higher cell density than planar MOSFETs in same footprint |
| Exposed drain thermal pad | Reduces RthJC to 3.8 °C/W - 5.3× better than SO-8 and 20× better than TSSOP-8 |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material definitions |
Applications
| Engine Control Unit (ECU) Load Switch | Automotive HVAC Blower Driver |
|---|---|
Use Scenario: High-side switching of solenoid valves and fuel injectors in gasoline/diesel engine management systems. IC Role / Device Role / Timing Role: N-channel MOSFET used as low-loss, high-reliability power switch controlled by microcontroller GPIO with external level-shifting. Use Value: 175 °C rating allows placement near engine compartment electronics; 0.036 Ω RDS(on) limits self-heating to <1.5 W at 6 A, eliminating need for discrete heatsinks. | Use Scenario: Half-bridge driver for brushed DC blower motors in climate control systems. IC Role / Device Role / Timing Role: Low-side switch in PWM-controlled motor drive with integrated body diode enabling freewheeling during off-time. Use Value: VSD = 0.8–1.2 V ensures low conduction loss during flyback; Qgd = 3 nC minimizes shoot-through risk in complementary gate drive timing. |
| Body Control Module (BCM) Power Distribution | Start-Stop System Battery Management |
Use Scenario: Solid-state replacement for mechanical relays in door lock, window lift, and lighting circuits. IC Role / Device Role / Timing Role: Single N-channel MOSFET configured as high-side switch with charge pump gate driver. Use Value: AEC-Q101 qualification guarantees 15+ year field life; 8 A continuous rating supports multiple loads per channel with margin. | Use Scenario: Bidirectional current sensing and isolation in 12 V battery disconnect units for idle-stop functionality. IC Role / Device Role / Timing Role: Low-RDS(on) switch enabling precise current measurement via shunt resistor during cranking and regenerative braking phases. Use Value: RDS(on) stability over -40 to +150 °C ensures consistent voltage drop across shunt; 32 A pulsed rating handles 200 ms cranking surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.032 Ω @ 10 V but only rated to 150 °C TJ; no AEC-Q101 qualification | Not suitable for under-hood automotive use; limited to industrial or consumer power supplies | Select only if ambient temperature stays below 85 °C and automotive qualification is not required |
| DMN6070LFG-7 | Same 60 V rating and PowerDI™ 3333 package, but RDS(on) = 0.052 Ω @ 4.5 V and 150 °C max TJ | Larger footprint (3.3 × 3.3 mm vs. 3.3 × 3.3 mm), identical thermal performance but lower gate drive margin | Prefer when existing layout uses PowerDI™ 3333 land pattern and 4.5 V gate drive is marginal |
Compared with IRF7470PBF and DMN6070LFG-7, SQS460EN-T1_BE3 delivers superior high-temperature reliability (175 °C vs. 150 °C), automotive qualification, and tighter RDS(on) tolerance at 4.5 V gate drive-making it the only choice for safety-critical, thermally aggressive automotive power switching.
Availability
SQS460EN-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, HVAC blower drivers, and body control module power distribution requiring stable component supply across extended automotive product lifecycles.
Supply support for SQS460EN-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS460EN-T1_BE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® family, engineered specifically for space-constrained, high-temperature power switching in next-generation vehicle electronics.
FAQ
What is the maximum continuous drain current rating for SQS460EN-T1_BE3 at 125 °C case temperature?
The SQS460EN-T1_BE3 maintains a continuous drain current rating of 8 A even at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and 175 °C junction rating, allowing sustained operation in high-ambient environments like engine compartments without current derating beyond the datasheet curve.
Does SQS460EN-T1_BE3 require a gate resistor for safe switching in automotive applications?
Yes, SQS460EN-T1_BE3 benefits from an external gate resistor (typically 5–22 Ω) to control dV/dt and prevent oscillation during high-speed switching. Its gate resistance Rg is specified as 1.3–6 Ω, and using a series resistor ensures reliable turn-on/turn-off timing, especially when driven by low-impedance microcontroller outputs or dedicated gate drivers in noisy automotive environments.
Is SQS460EN-T1_BE3 compatible with lead-free reflow soldering profiles?
Yes, SQS460EN-T1_BE3 is qualified for lead-free reflow soldering with a peak temperature of 240 °C (±5 °C) for 20–40 seconds, per Vishay document 73257. The PowerPAK 1212-8 package is fully compatible with standard JEDEC J-STD-020 profiles, and no special pre-bake or moisture sensitivity handling is required due to its MSL1 rating.
How does the RDS(on) of SQS460EN-T1_BE3 change with junction temperature?
The RDS(on) of SQS460EN-T1_BE3 increases predictably with junction temperature: at VGS = 10 V and ID = 5.3 A, it rises from 0.036 Ω at 25 °C to 0.066 Ω at 125 °C and 0.082 Ω at 175 °C. This behavior is documented in the "RDS(on) vs. Junction Temperature" graph on page 4 of the datasheet and enables accurate thermal modeling in worst-case conduction loss calculations.
Can SQS460EN-T1_BE3 be used in synchronous rectification applications?
No, SQS460EN-T1_BE3 is not recommended for synchronous rectification because its body diode forward voltage (VSD = 0.8–1.2 V) and reverse recovery characteristics are not optimized for high-frequency freewheeling. It lacks specified trr or Qrr parameters, and its design prioritizes low RDS(on) and ruggedness over fast diode recovery-making it suitable for switching but not rectification roles.
SQS460EN-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 36mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 755 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 39W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SQS460EN-T1_BE3 FAQ
1.How can I place an order for SQS460EN-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS460EN-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS460EN-T1_BE3 reliable?
The price and inventory of SQS460EN-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS460EN-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQS460EN-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS460EN-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS460EN-T1_BE3?
SQS460EN-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS460EN-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS460EN-T1_BE3?
For technical support, including SQS460EN-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS460EN-T1_BE3 requirements.
6.How does Aetrix verify that SQS460EN-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQS460EN-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS460EN-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQS460EN-T1_BE3?
All SQS460EN-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS460EN-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS460EN-T1_BE3 part is unused and in its original packaging.
Return procedure for SQS460EN-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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