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Vishay Siliconix SQS482EN-T1_BE3
- Part No.:
- SQS482EN-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SQS482EN-T1_BE3.pdf
- Description:
- N-CHANNEL 30-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
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Product details
Overview
SQS482EN-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 16 A continuous drain current at 25 °C, and 0.0085 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is housed in a PowerPAK® 1212-8 leadless package, targeting high-efficiency DC-DC converters and motor control stages in engine management systems.
For engineers reviewing the SQS482EN-T1_BE3 datasheet, SQS482EN-T1_BE3 pinout, SQS482EN-T1_BE3 application, or SQS482EN-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % Rg and UIS testing, ultra-low RDS(on) at 4.5 V (0.0100 Ω), and junction-to-case thermal resistance of 2.4 °C/W - critical for thermally constrained automotive power stages.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in synchronous buck converters and H-bridge drivers. Its gate charge profile (Qg = 26–39 nC, Qgd = 4.3 nC) supports efficient PWM operation at frequencies up to 1 MHz while maintaining low EMI due to controlled dV/dt.
The device integrates a robust body diode with VSD = 0.82–1.2 V at IF = 15 A and is fully characterized for unclamped inductive switching (UIS), enabling reliable operation in inductive load switching without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V automotive battery systems including load dump transients. |
| RDS(on) @ VGS = 10 V | 0.0085 Ω - Enables ≤1.36 W conduction loss at 16 A, reducing thermal stress in compact power modules. |
| RDS(on) @ VGS = 4.5 V | 0.0100 Ω - Ensures stable on-resistance under typical 5 V gate drive from automotive microcontrollers. |
| ID Continuous | 16 A @ TC = 25 °C - Sustains high-current loads such as fuel injector drivers or fan motors without derating at board-level heatsinking. |
| Junction Temp Range | −55 to +175 °C - Certified for under-hood applications including transmission control units and EPS modules. |
| RthJC | 2.4 °C/W - Delivers direct thermal path from die to PCB copper, enabling >20 W dissipation with minimal ΔT across junction-to-drain pad. |
| Qg | 26–39 nC - Supports efficient gate driving with standard 1-A peak drivers, minimizing driver losses in high-frequency SMPS. |
| AEC-Q101 Qualified | Yes - Validated per automotive reliability stress test standards including HTGB, HTRB, and temperature cycling. |
Pinout & Package
Package: PowerPAK® 1212-8 (3.3 mm × 3.3 mm × 1.05 mm), leadless surface-mount, exposed drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 6, 7, 8 | Drain (D) | Seven parallel drain terminals tied to large exposed copper pad - provides low-inductance, high-current path and primary thermal conduction path to PCB. |
| 4 | Gate (G) | Single gate input terminal - requires <20 Ω series resistance to suppress ringing during fast switching transitions. |
| - (Bottom Pad) | Source (S) | Exposed source metallization on underside - forms low-impedance return path and contributes to thermal dissipation via soldered copper area. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Technology | Enables 30% lower RDS(on) vs. planar MOSFETs at same die size, improving power density in space-constrained ECUs. |
| AEC-Q101 Qualified | Validated for automotive mission profiles including 1000+ thermal cycles and 1000 h HTOL - ensures long-term reliability in safety-critical systems. |
| 100% Rg and UIS Tested | Each unit screened for gate resistance consistency and single-pulse avalanche energy (EAS = 48 mJ), eliminating field failures from inductive kickback. |
| PowerPAK 1212-8 Package | Delivers 20× better thermal performance than TSSOP-8 and 40% smaller footprint - enables PCB real estate savings without sacrificing thermal headroom. |
| Low Qgd/Qg Ratio | 0.165 (4.3/26 nC) - reduces Miller effect, enabling stable hard-switching at high duty cycles in synchronous rectifiers. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Controller |
|---|---|
Use Scenario: High-speed switching of 12 V solenoid injectors with 2–5 ms pulse width and 10 kHz PWM modulation. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; must withstand 80 V inductive flyback and operate continuously at 150 °C ambient. Use Value: 0.0100 Ω RDS(on) at 4.5 V gate drive ensures full saturation from MCU GPIO, while 175 °C rating eliminates derating in sealed ECU enclosures. |
Use Scenario: PWM-controlled 24 V blower motor delivering 10–15 A peak current in cabin air circulation systems. IC Role / Device Role / Timing Role: Half-bridge low-side switch in 20–100 kHz inverter stage; handles bidirectional current during regenerative braking phases. Use Value: 48 mJ single-pulse avalanche energy absorbs back-EMF spikes during abrupt motor stop, eliminating need for external TVS diodes. |
| Electric Power Steering (EPS) Torque Assist Module | 12 V Automotive DC-DC Converter Primary Switch |
Use Scenario: Compact 48 V–12 V bidirectional buck-boost converter supplying assist torque electronics in steer-by-wire systems. IC Role / Device Role / Timing Role: Synchronous rectifier in high-frequency (300 kHz) converter; conducts reverse current during light-load discontinuous conduction mode. Use Value: Body diode forward voltage of 0.82 V minimizes conduction loss during reverse conduction, improving light-load efficiency by ≥1.2%. |
Use Scenario: Primary-side switch in 12 V input, 5 V/3 A isolated flyback converter powering ADAS camera modules. IC Role / Device Role / Timing Role: High-side switch operating at 250 kHz with 50% duty cycle; subjected to repetitive 60 V transient surges per ISO 7637-2. Use Value: 30 V VDS rating with 100 % UIS screening ensures survival during load-dump events without clamping circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N04LS6 | RDS(on) = 1.4 mΩ @ 10 V (lower), but 40 V VDS; larger PowerSO-8 package (5 × 6 mm); RthJC = 1.8 °C/W. | Better conduction loss at high current, but less suitable for tight 3.3 mm × 3.3 mm layouts; higher cost. | Select when maximum efficiency at >20 A is required and PCB area permits larger footprint. |
| ON Semiconductor NTMFS4C09NT1G | RDS(on) = 9.5 mΩ @ 10 V (slightly higher); same PowerPAK 1212-8; AEC-Q101 qualified; RthJC = 2.5 °C/W. | Nearly identical mechanical fit and thermal behavior; marginally higher conduction loss increases Ploss by ~0.12 W at 16 A. | Preferred for second-source assurance where identical board layout reuse is mandatory and 5% RDS(on) increase is acceptable. |
Compared with BSC014N04LS6 and NTMFS4C09NT1G, the SQS482EN-T1_BE3 delivers optimal balance of ultra-compact footprint, proven 175 °C operation, and tightly specified 4.5 V drive capability - making it the preferred choice for next-generation ECU and ADAS power stages where space, temperature, and gate drive voltage constraints converge.
Availability
SQS482EN-T1_BE3 is available at Aetrix Electronics and suitable for automotive engine control, electric power steering, HVAC motor drives, and ADAS domain controller power supplies requiring stable component supply across extended product lifecycles.
Supply support for SQS482EN-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS482EN-T1_BE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® portfolio, engineered specifically for high-current, high-temperature switching in engine bay and chassis-mounted electronic control units.
FAQ
What is the maximum continuous drain current rating for SQS482EN-T1_BE3 at 125 °C case temperature?
The SQS482EN-T1_BE3 maintains a continuous drain current rating of 16 A even at TC = 125 °C, as confirmed in the Absolute Maximum Ratings table. This reflects its robust thermal design and 175 °C junction rating - enabling sustained operation in high-ambient environments like transmission control modules without current derating.
Is SQS482EN-T1_BE3 suitable for 4.5 V logic-level gate drive applications?
Yes, the SQS482EN-T1_BE3 is fully specified for 4.5 V gate drive, with RDS(on) = 0.0100 Ω (max) at VGS = 4.5 V and ID = 16.4 A. Its gate threshold voltage range (1.5–2.5 V) ensures strong turn-on with standard 5 V microcontroller outputs, making it ideal for automotive MCU-driven power stages.
Does SQS482EN-T1_BE3 have avalanche ruggedness certification?
Yes, the SQS482EN-T1_BE3 undergoes 100 % unclamped inductive switching (UIS) testing per JEDEC JESD24-1, with a guaranteed single-pulse avalanche energy rating of 48 mJ (L = 0.1 mH). This validates its ability to safely absorb inductive energy during fault conditions without failure.
What is the thermal resistance from junction to case (RthJC) for SQS482EN-T1_BE3?
The SQS482EN-T1_BE3 has a junction-to-case (drain) thermal resistance of 2.4 °C/W, measured under standard test conditions. This low value is enabled by the exposed drain pad in the PowerPAK 1212-8 package, allowing efficient heat transfer directly to the PCB copper plane.
How does the PowerPAK 1212-8 package of SQS482EN-T1_BE3 compare thermally to SO-8 or TSSOP-8 packages?
The PowerPAK 1212-8 package used in SQS482EN-T1_BE3 delivers 20× lower junction-to-ambient thermal resistance than TSSOP-8 and ≈8× better than SO-8. With RthJC = 2.4 °C/W and minimal thermal interface resistance, SQS482EN-T1_BE3 achieves die temperatures only ~4.8 °C above board temperature at 2 W dissipation - versus >40 °C rise in legacy packages.
SQS482EN-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 16.4A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 39 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1865 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 62W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SQS482EN-T1_BE3 FAQ
1.How can I place an order for SQS482EN-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS482EN-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS482EN-T1_BE3 reliable?
The price and inventory of SQS482EN-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS482EN-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQS482EN-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS482EN-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS482EN-T1_BE3?
SQS482EN-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS482EN-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS482EN-T1_BE3?
For technical support, including SQS482EN-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS482EN-T1_BE3 requirements.
6.How does Aetrix verify that SQS482EN-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQS482EN-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS482EN-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQS482EN-T1_BE3?
All SQS482EN-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS482EN-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS482EN-T1_BE3 part is unused and in its original packaging.
Return procedure for SQS482EN-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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