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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQS482EN-T1_GE3

Name: SQS482EN-T1_GE3
Brand: Vishay Siliconix
SKU: SQS482EN-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQS482EN-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SQS482EN-T1_GE3.pdf

Description:: MOSFET N-CH 30V 16A PPAK1212-8

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Product details

Overview

SQS482EN-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 30 V MOSFET in PowerPAK® 1212-8 package, delivering R_DS(on) = 8.5 mΩ at V_GS = 10 V and 10.0 mΩ at V_GS = 4.5 V, rated for continuous 16 A drain current and 175 °C junction operation - deployed in high-efficiency DC-DC converters and motor control stages of ADAS power modules.

For engineers reviewing the SQS482EN-T1_GE3 datasheet, SQS482EN-T1_GE3 pinout, SQS482EN-T1_GE3 application, or SQS482EN-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 2.4 °C/W junction-to-case thermal resistance, 100 % R_g and UIS tested reliability, and compatibility with 4.5 V logic-level gate drive in space-constrained automotive PCBs.

Technical Context

This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with Q_g = 26–39 nC and t_d(on)/t_r/t_d(off)/t_f = 7–11 ns / 21–32 ns / 49–74 ns / 18–27 ns under standard test conditions (V_DD = 15 V, R_g = 1 Ω). Its 100 % UIS-tested ruggedness supports reliable operation in inductive load switching.

The device features integrated body diode with V_SD = 0.82–1.2 V at I_F = 15 A and exhibits normalized R_DS(on) drift of ≤ 2.0× from −55 °C to +175 °C, enabling stable performance across automotive ambient extremes without derating beyond datasheet limits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage compatible with 24 V automotive systems and transient clamping up to ISO 7637-2 Pulse 1/2a.
R_DS(on) @ 10 V	8.5 mΩ - enables ≤ 2.2 W conduction loss at 16 A, critical for thermally constrained engine bay power stages.
R_DS(on) @ 4.5 V	10.0 mΩ - ensures full enhancement with standard 5 V microcontroller GPIO or PMIC gate drivers without level-shifting.
I_D Continuous	16 A - supports peak load currents in 12–24 V BLDC motor gate drivers and solenoid drivers.
R_thJC	2.4 °C/W - allows direct thermal coupling to PCB copper pour, achieving < 50 °C junction rise over board at 2 W dissipation.
AEC-Q101	Qualified - validated for automotive electronics per stress test requirements including HTGB, HTRB, and temperature cycling.
Q_g	26–39 nC - balances switching speed and gate driver power loss in 100–500 kHz DC-DC applications.

Pinout & Package

PowerPAK® 1212-8 is a leadless surface-mount package measuring 3.3 mm × 3.3 mm × 1.05 mm with exposed drain pad on bottom side for optimal thermal transfer. The top-side marking "Q017" identifies the SQS482EN variant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain (D)	All eight pins connect internally to the large bottom-side drain paddle - provides low-inductance, high-current path and primary thermal conduction route to PCB.
4 (Gate)	Gate (G)	Single dedicated gate terminal located at corner - minimizes gate loop inductance for clean turn-on/turn-off in high-dI/dt applications.
1, 2, 3 (Source)	Source (S)	Three source terminals on one side - reduce source inductance and improve current sharing in parallel configurations.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 8.5 mΩ R_DS(on) in 3.3 mm × 3.3 mm footprint - delivers 2× current density vs. comparable TSOP-6 MOSFETs.
100 % R_g and UIS tested	Guarantees gate robustness and single-pulse avalanche energy rating of 48 mJ - eliminates field failures in inductive switching.
Exposed drain paddle	Provides 2.4 °C/W R_thJC - reduces thermal impedance by >80 % versus SO-8, enabling higher power in same area.
AEC-Q101 qualification	Validated for automotive underhood use up to 175 °C TJ - supports ASIL-B system integration without additional qualification effort.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile - compatible with standard lead-free SMT assembly.

Applications

Engine Control Unit (ECU) Power Stage	ADAS Camera Module Power Supply
Use Scenario: High-side switch for fuel injector or ignition coil driver in gasoline/diesel ECUs operating at 125 °C ambient. IC Role / Device Role / Timing Role: N-channel MOSFET configured as high-side switch with external charge pump or bootstrap gate driver. Use Value: 175 °C rated junction and 100 % UIS testing ensure survival during cold-crank transients and load dump events per ISO 16750-2.	Use Scenario: Synchronous rectifier in 5 V/3 A buck converter powering image sensor and ISP in forward-facing camera module. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with 4.5 V gate drive from controller IC. Use Value: 10.0 mΩ R_DS(on) at 4.5 V reduces conduction loss by 35 % vs. standard logic-level MOSFETs, improving efficiency above 92 % at full load.
Electric Power Steering (EPS) Motor Driver	Automotive HVAC Blower Control
Use Scenario: Half-bridge leg in 3-phase inverter driving 24 V EPS motor with PWM frequency up to 20 kHz. IC Role / Device Role / Timing Role: Low-side switch in three-phase bridge with gate drive sourced from isolated gate driver IC. Use Value: 26–39 nC total gate charge and 21–32 ns rise time enable clean switching with minimal shoot-through risk and EMI below CISPR 25 Class 5 limits.	Use Scenario: PWM-controlled high-side switch regulating airflow in cabin HVAC blower motor (12 V, 15 A peak). IC Role / Device Role / Timing Role: N-channel MOSFET used with integrated high-side driver IC providing 10 V gate bias. Use Value: 8.5 mΩ R_DS(on) limits I²R loss to < 1.9 W at 15 A, reducing heatsink requirement and enabling fanless enclosure design.

Engine Control Unit (ECU) Power Stage

ADAS Camera Module Power Supply

Use Scenario: High-side switch for fuel injector or ignition coil driver in gasoline/diesel ECUs operating at 125 °C ambient.

IC Role / Device Role / Timing Role: N-channel MOSFET configured as high-side switch with external charge pump or bootstrap gate driver.

Use Value: 175 °C rated junction and 100 % UIS testing ensure survival during cold-crank transients and load dump events per ISO 16750-2.

Use Scenario: Synchronous rectifier in 5 V/3 A buck converter powering image sensor and ISP in forward-facing camera module.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with 4.5 V gate drive from controller IC.

Use Value: 10.0 mΩ R_DS(on) at 4.5 V reduces conduction loss by 35 % vs. standard logic-level MOSFETs, improving efficiency above 92 % at full load.

Electric Power Steering (EPS) Motor Driver

Automotive HVAC Blower Control

Use Scenario: Half-bridge leg in 3-phase inverter driving 24 V EPS motor with PWM frequency up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side switch in three-phase bridge with gate drive sourced from isolated gate driver IC.

Use Value: 26–39 nC total gate charge and 21–32 ns rise time enable clean switching with minimal shoot-through risk and EMI below CISPR 25 Class 5 limits.

Use Scenario: PWM-controlled high-side switch regulating airflow in cabin HVAC blower motor (12 V, 15 A peak).

IC Role / Device Role / Timing Role: N-channel MOSFET used with integrated high-side driver IC providing 10 V gate bias.

Use Value: 8.5 mΩ R_DS(on) limits I²R loss to < 1.9 W at 15 A, reducing heatsink requirement and enabling fanless enclosure design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiL670ADN-T1-GE3	R_DS(on) = 9.0 mΩ @ 10 V; R_thJC = 2.5 °C/W; same PowerPAK 1212-8 package and AEC-Q101 rating.	Marginally higher on-resistance increases conduction loss by ~6 % at 16 A; identical thermal and layout compatibility.	Select when SiL670ADN-T1-GE3 offers better distributor stock or pricing while maintaining functional equivalence in existing designs.
IRL8726PBF	R_DS(on) = 7.0 mΩ @ 10 V but in larger SO-8 package; R_thJC = 1.8 °C/W; not AEC-Q101 qualified.	Higher thermal performance but lacks automotive qualification; requires PCB redesign due to SO-8 footprint and different pinout.	Consider only for non-automotive industrial applications where AEC-Q101 is not required and board space permits SO-8 layout.

Compared with SiL670ADN-T1-GE3, SQS482EN-T1_GE3 offers lower R_DS(on) and tighter gate charge distribution; versus IRL8726PBF, it trades minor on-resistance increase for AEC-Q101 compliance and 40 % smaller footprint - making SQS482EN-T1_GE3 the preferred choice for new automotive designs requiring space and qualification alignment.

Availability

SQS482EN-T1_GE3 is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and lighting applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SQS482EN-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQS482EN-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® portfolio, engineered specifically for high-current, high-temperature switching in engine control, ADAS, and electrification subsystems.

FAQ

What is the maximum junction temperature rating for SQS482EN-T1_GE3?

The SQS482EN-T1_GE3 is rated for continuous operation up to +175 °C junction temperature, verified per AEC-Q101 stress test conditions. This rating is supported by its thermal design - R_thJC = 2.4 °C/W and R_thJA = 81 °C/W - allowing reliable use in under-hood automotive environments where ambient temperatures reach +125 °C. The SQS482EN-T1_GE3 datasheet specifies derating curves confirming full 16 A current capability at 175 °C TJ.

Is SQS482EN-T1_GE3 pin-compatible with other PowerPAK 1212-8 MOSFETs?

Yes, SQS482EN-T1_GE3 uses the standard PowerPAK 1212-8 single configuration pinout: pins 1–3 are Source, pin 4 is Gate, and pins 5–8 are Drain (internally connected to the bottom paddle). This matches all Vishay PowerPAK 1212-8 single MOSFETs including SiL670ADN-T1-GE3 and SQJQ482EP-T1_GE3, enabling direct layout reuse across qualified alternatives without PCB modification.

Does SQS482EN-T1_GE3 require special PCB layout considerations for thermal performance?

Yes - optimal thermal performance for SQS482EN-T1_GE3 requires maximizing copper area under the exposed drain paddle. Vishay recommends ≥ 0.3 in² (≈ 193 mm²) of 2 oz. copper on inner or bottom layers connected via ≥ 6 thermal vias (0.3 mm diameter, 0.8 mm pitch) to the drain land. The SQS482EN-T1_GE3 application note AN822 confirms that exceeding 0.5 in² yields diminishing returns, and insufficient copper causes R_thJA to degrade beyond 81 °C/W.

What gate drive voltage range is recommended for SQS482EN-T1_GE3?

SQS482EN-T1_GE3 is characterized for operation from V_GS = ±20 V absolute maximum, with full enhancement achieved at V_GS = 4.5 V (R_DS(on) = 10.0 mΩ) and optimized conduction at V_GS = 10 V (R_DS(on) = 8.5 mΩ). For automotive systems, 5 V or 10 V logic-level gate drivers are recommended; gate resistors between 1 Ω and 10 Ω balance switching speed and EMI. The SQS482EN-T1_GE3 gate threshold voltage range is 1.5–2.5 V, ensuring noise immunity in noisy vehicle environments.

How is SQS482EN-T1_GE3 qualified for automotive use?

SQS482EN-T1_GE3 is AEC-Q101 qualified, meaning it has passed stress tests including high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), temperature cycling (−55 °C to +175 °C), and unbiased highly accelerated stress test (uHAST). It also undergoes 100 % R_g and UIS (unclamped inductive switching) screening per the SQS482EN-T1_GE3 datasheet revision C. These qualifications validate its suitability for safety-critical automotive functions without additional component-level qualification.

SQS482EN-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 16.4A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1865 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 62W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SQS482EN-T1_GE3 FAQ

1.How can I place an order for SQS482EN-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQS482EN-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQS482EN-T1_GE3 reliable?

The price and inventory of SQS482EN-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS482EN-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQS482EN-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS482EN-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQS482EN-T1_GE3?

SQS482EN-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQS482EN-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQS482EN-T1_GE3?

For technical support, including SQS482EN-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS482EN-T1_GE3 requirements.

6.How does Aetrix verify that SQS482EN-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQS482EN-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS482EN-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQS482EN-T1_GE3?

All SQS482EN-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS482EN-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQS482EN-T1_GE3 part is unused and in its original packaging.

Return procedure for SQS482EN-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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