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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQS482ENW-T1_GE3

Name: SQS482ENW-T1_GE3
Brand: Vishay Siliconix
SKU: SQS482ENW-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQS482ENW-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8W

Datasheet:: SQS482ENW-T1_GE3.pdf

Description:: MOSFET N-CH 30V 16A PPAK1212-8W

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Product details

Overview

SQS482ENW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 30 V MOSFET in PowerPAK 1212-8W package, delivering R_DS(on) = 8.5 mΩ at V_GS = 10 V and 10.0 mΩ at V_GS = 4.5 V, rated for 16 A continuous drain current and 175 °C junction operation - used in high-efficiency DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the SQS482ENW-T1_GE3 datasheet, SQS482ENW-T1_GE3 pinout, SQS482ENW-T1_GE3 application, or SQS482ENW-T1_GE3 equivalent, key selection criteria include AEC-Q101 qualification, 100% R_g and UIS testing, thermal robustness up to +175 °C, and low gate charge (Q_g = 26–39 nC) for fast switching in 12 V automotive power rails.

Technical Context

This MOSFET employs TrenchFET® technology to achieve low on-resistance and optimized gate charge trade-offs. Its 30 V V_DS rating targets 12 V battery-derived systems, and the 175 °C T_J rating enables placement near hot zones like engine compartments without derating.

The PowerPAK 1212-8W leadless package provides low R_thJC = 2.4 °C/W and supports high-current PCB mounting with exposed drain copper on the bottom side. Gate threshold voltage (V_GS(th) = 1.5–2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports full operation across automotive battery transients (up to ISO 7637-2 Pulse 5a).
R_DS(on) @ 10 V	8.5 mΩ - Enables <1 W conduction loss at 16 A, critical for thermally constrained under-hood modules.
R_DS(on) @ 4.5 V	10.0 mΩ - Ensures robust switching with common 5 V microcontroller GPIOs or gate drivers.
I_D (continuous)	16 A - Sustains peak load currents in BLDC motor phase legs and solenoid drivers.
Q_g	26–39 nC - Balances switching speed and drive strength requirements for <100 kHz PWM applications.
T_J max	+175 °C - Qualified for engine control units (ECUs), transmission control modules (TCMs), and turbocharger actuators.
AEC-Q101	Qualified - Meets stress test requirements for automotive electronics reliability per JESD22-A108.

Pinout & Package

Package: PowerPAK 1212-8W - 3.3 mm × 3.3 mm leadless surface-mount package with exposed drain pad on bottom side for thermal and electrical connection. No leads; soldering requires controlled reflow profile per Vishay doc#73257.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7, 8	Drain (D)	Seven parallel drain terminals - collectively carry full load current and connect to internal die source metallization and exposed bottom copper pad.
4	Gate (G)	Single gate input - accepts standard CMOS/TTL logic-level signals; R_g = 5–20 Ω supports stable gate drive without external damping.
1, 2, 3	Source (S)	Three dedicated source terminals - provide low-inductance return path for high di/dt switching and body diode conduction.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for reduced switching + conduction losses in 12 V systems.
AEC-Q101 qualification	Validated for automotive use via temperature cycling, HTRB, UHAST, and ESD tests - eliminates need for additional qualification by Tier 1 suppliers.
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching ruggedness - ensures field reliability in motor flyback events.
Exposed drain thermal pad	Enables direct thermal coupling to PCB copper pour, achieving R_thJA = 81 °C/W on 1"² FR4 - reduces heatsink dependency in space-constrained ECUs.

Applications

Engine Control Unit (ECU) Power Stage	Transmission Control Module (TCM) Solenoid Driver
Use Scenario: High-side switching of fuel injector or ignition coil loads in gasoline direct injection (GDI) engines. IC Role / Device Role / Timing Role: N-channel MOSFET used as low-side switch in saturated mode with fast turn-off to control precise fuel pulse width. Use Value: 175 °C rating allows placement directly on ECU main board near MCU; 10 mΩ R_DS(on) at 4.5 V enables direct drive from ASIL-B microcontroller outputs.	Use Scenario: Driving linear solenoids for shift control and pressure regulation in 8-speed automatic transmissions. IC Role / Device Role / Timing Role: Low-side switch modulated via PWM to regulate solenoid current and hydraulic pressure with <10 μs response. Use Value: 64 A pulsed current rating handles inrush; 48 mJ single-pulse avalanche energy absorbs inductive kickback without snubbers.
Electric Power Steering (EPS) Motor Phase Leg	On-Board Charger (OBC) DC-DC Isolation Stage
Use Scenario: Half-bridge leg in 3-phase inverter driving brushless torque assist motor (24–48 V nominal). IC Role / Device Role / Timing Role: N-channel MOSFET in synchronous rectification configuration with complementary high-side driver. Use Value: Low Q_gd/Q_gs ratio (4.3/4.7 nC) minimizes shoot-through risk; 1492 pF C_iss supports stable 20–50 kHz PWM operation.	Use Scenario: Primary-side switch in isolated flyback or active clamp forward converter for 400 V to 12 V conversion in bidirectional OBCs. IC Role / Device Role / Timing Role: Fast-switching power switch operating at 100–200 kHz with zero-voltage switching (ZVS) assistance. Use Value: 2.4 °C/W R_thJC enables direct thermal interface to heatsink; 30 V rating accommodates reflected voltage spikes in transformer-coupled topologies.

Engine Control Unit (ECU) Power Stage

Transmission Control Module (TCM) Solenoid Driver

Use Scenario: High-side switching of fuel injector or ignition coil loads in gasoline direct injection (GDI) engines.

IC Role / Device Role / Timing Role: N-channel MOSFET used as low-side switch in saturated mode with fast turn-off to control precise fuel pulse width.

Use Value: 175 °C rating allows placement directly on ECU main board near MCU; 10 mΩ R_DS(on) at 4.5 V enables direct drive from ASIL-B microcontroller outputs.

Use Scenario: Driving linear solenoids for shift control and pressure regulation in 8-speed automatic transmissions.

IC Role / Device Role / Timing Role: Low-side switch modulated via PWM to regulate solenoid current and hydraulic pressure with <10 μs response.

Use Value: 64 A pulsed current rating handles inrush; 48 mJ single-pulse avalanche energy absorbs inductive kickback without snubbers.

Electric Power Steering (EPS) Motor Phase Leg

On-Board Charger (OBC) DC-DC Isolation Stage

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless torque assist motor (24–48 V nominal).

IC Role / Device Role / Timing Role: N-channel MOSFET in synchronous rectification configuration with complementary high-side driver.

Use Value: Low Q_gd/Q_gs ratio (4.3/4.7 nC) minimizes shoot-through risk; 1492 pF C_iss supports stable 20–50 kHz PWM operation.

Use Scenario: Primary-side switch in isolated flyback or active clamp forward converter for 400 V to 12 V conversion in bidirectional OBCs.

IC Role / Device Role / Timing Role: Fast-switching power switch operating at 100–200 kHz with zero-voltage switching (ZVS) assistance.

Use Value: 2.4 °C/W R_thJC enables direct thermal interface to heatsink; 30 V rating accommodates reflected voltage spikes in transformer-coupled topologies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL8721PBF	R_DS(on) = 9.0 mΩ @ 10 V; TO-220AB package; no AEC-Q101 qualification.	Requires external heatsink; unsuitable for under-hood mounting due to plastic package thermal limits.	Select only for non-automotive industrial prototypes where qualification is not required.
STL220N3LLH6	R_DS(on) = 1.8 mΩ @ 10 V; PowerFLAT 5x6 package; AEC-Q101 qualified; higher cost.	Better efficiency at >20 A but over-specified for 16 A applications; larger footprint than PowerPAK 1212-8W.	Prefer when system-level efficiency gain justifies cost and layout impact.

Compared with IRL8721PBF and STL220N3LLH6, SQS482ENW-T1_GE3 delivers optimal balance of AEC-Q101 compliance, thermal performance in ultra-compact size, and cost for 12–24 V automotive power stages up to 16 A.

Availability

SQS482ENW-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, transmission control modules, electric power steering systems, and on-board chargers requiring stable component supply across automotive production lifecycles.

Supply support for SQS482ENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with focus on power efficiency, reliability, and miniaturization.

SQS482ENW-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-temperature, high-reliability switching in engine bay and chassis-mounted electronic control modules.

FAQ

What is the maximum junction temperature rating for SQS482ENW-T1_GE3?

The SQS482ENW-T1_GE3 is rated for a maximum junction temperature of +175 °C, verified per AEC-Q101 stress testing. This enables operation in high-ambient environments such as engine control units mounted near exhaust manifolds or turbochargers. The device maintains specified R_DS(on) performance up to this limit, with normalized on-resistance rising to 1.6× typical at 175 °C.

Is SQS482ENW-T1_GE3 qualified to AEC-Q101 standards?

Yes, SQS482ENW-T1_GE3 is fully AEC-Q101 qualified. Vishay confirms qualification through temperature cycling, high-temperature reverse bias (HTRB), unbiased highly accelerated stress test (UHAST), and electrostatic discharge (ESD) testing per JESD22-A108. Documentation is available in Vishay's reliability report for document number 75543.

What is the gate threshold voltage range for SQS482ENW-T1_GE3?

The gate threshold voltage (V_GS(th)) for SQS482ENW-T1_GE3 is specified as 1.5 V minimum, 2.0 V typical, and 2.5 V maximum at I_D = 250 μA. This range ensures compatibility with both 3.3 V and 5 V logic-level gate drivers while maintaining noise immunity in electrically noisy automotive environments.

Does SQS482ENW-T1_GE3 have integrated avalanche ruggedness?

Yes, SQS482ENW-T1_GE3 is 100 % tested for unclamped inductive switching (UIS) and rated for single-pulse avalanche energy (E_AS) of 48 mJ at I_AS = 31 A and L = 0.1 mH. This ruggedness protects against inductive kickback in motor and solenoid drive applications without requiring external snubber circuits.

What is the recommended PCB pad layout for SQS482ENW-T1_GE3?

Vishay specifies recommended minimum pads for the PowerPAK 1212-8W package in Application Note AN826 (doc#72597): 2.235 mm × 3.860 mm for drain, 0.990 mm × 1.725 mm for gate, and 2.390 mm × 0.255 mm for each source pad. Thermal vias under the exposed drain pad are strongly advised to enhance heat transfer to inner ground planes.

SQS482ENW-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8W

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 16.4A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1865 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 62W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8W

SQS482ENW-T1_GE3 FAQ

1.How can I place an order for SQS482ENW-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQS482ENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQS482ENW-T1_GE3 reliable?

The price and inventory of SQS482ENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS482ENW-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQS482ENW-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS482ENW-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQS482ENW-T1_GE3?

SQS482ENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQS482ENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQS482ENW-T1_GE3?

For technical support, including SQS482ENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS482ENW-T1_GE3 requirements.

6.How does Aetrix verify that SQS482ENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQS482ENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS482ENW-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQS482ENW-T1_GE3?

All SQS482ENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS482ENW-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQS482ENW-T1_GE3 part is unused and in its original packaging.

Return procedure for SQS482ENW-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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