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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQS484CENW-T1_GE3

Name: SQS484CENW-T1_GE3
Brand: Vishay Siliconix
SKU: SQS484CENW-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQS484CENW-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8W

Datasheet:: SQS484CENW-T1_GE3.pdf

Description:: MOSFET N-CH 40V 16A PPAK 1212-8W

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Product details

Overview

SQS484CENW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 16 A continuous drain current at 25 °C, and 0.0095 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, making it suitable for high-reliability engine control, transmission, and body electronics switching applications.

For engineers reviewing the SQS484CENW-T1_GE3 datasheet, SQS484CENW-T1_GE3 pinout, SQS484CENW-T1_GE3 application, or SQS484CENW-T1_GE3 equivalent, key selection criteria include its PowerPAK 1212-8W leadless package, 100% R_g and UIS tested reliability, low gate charge (27 nC typ.), and robust thermal resistance (R_thJC = 2.4 °C/W).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V automotive systems. Its gate threshold voltage (1.5–2.5 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers, while the integrated body diode supports synchronous rectification and freewheeling in DC-DC converters and motor drives.

The device features a thermally enhanced PowerPAK 1212-8W package with exposed drain copper on the bottom side for direct PCB heat sinking. Its dynamic parameters-including C_iss = 1565 pF (typ.), Q_gd = 3.6 nC (typ.), and t_r = 2.4 ns (typ.)-support high-frequency PWM operation up to several hundred kHz in compact power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) @ V_GS = 10 V	0.0095 Ω - Enables <1.5 W conduction loss at 16 A, reducing heatsink requirements in space-constrained modules.
I_D (continuous)	16 A @ T_C = 25 °C - Sustains full-rated current when mounted on 1"² FR4 PCB with 2 oz copper.
Q_g (total gate charge)	27 nC (typ.) - Low drive power requirement supports efficient gate driving with small-footprint controllers.
R_thJC	2.4 °C/W - Enables rapid heat transfer from junction to PCB copper, critical for sustained high-current operation.
T_J max	+175 °C - Meets under-hood temperature requirements for engine control units and transmission control modules.
AEC-Q101 qualified	Yes - Validated for automotive use per stress test standards including HTGB, HTRB, and UIS.

Pinout & Package

Package: PowerPAK® 1212-8W - 3.3 mm × 3.3 mm leadless surface-mount package with exposed drain paddle on bottom side for thermal enhancement. No leads; soldered via bottom-side copper land pattern per Application Note AN826.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5	Source (S)	Common source connection; electrically tied internally and externally to PCB ground plane for low-inductance return path.
4	Gate (G)	Control input; requires <20 V absolute max rating; low R_g (3.6–12.8 Ω) minimizes ringing during switching.
6, 7, 8	Drain (D)	High-side or low-side power switch node; connected to exposed copper paddle for primary thermal conduction to PCB.

Key Features

Feature	Design Value
TrenchFET® technology	Enables ultra-low R_DS(on) and high cell density in compact 3.3 mm × 3.3 mm footprint.
AEC-Q101 qualification	Validated for automotive mission-critical functions including engine management and ADAS power stages.
100% R_g and UIS testing	Ensures gate robustness against ESD and ruggedness against unclamped inductive switching stress.
Exposed drain thermal pad	Provides direct thermal path to PCB copper, achieving R_thJA = 81 °C/W on 1"² FR4 board.
Low Q_gd/Q_g ratio	3.6/27 nC = 0.13 - Improves Miller immunity and reduces switching loss during hard commutation.

Applications

Engine Control Unit (ECU)	Transmission Control Module (TCM)
Use Scenario: High-side switching of fuel injectors and ignition coils in gasoline/diesel ECUs operating at ambient up to 125 °C. IC Role / Device Role / Timing Role: Power switch controlling pulsed 12 V loads with precise timing resolution down to 10 μs. Use Value: 0.0095 Ω R_DS(on) minimizes injector coil heating and improves duty cycle accuracy over temperature.	Use Scenario: Solenoid driver for hydraulic pressure control valves in automatic transmissions. IC Role / Device Role / Timing Role: Low-side switch enabling PWM-controlled current regulation (0–2 A) with fast turn-off (<12 ns fall time). Use Value: 175 °C max junction temperature ensures stable operation near hot gearbox housings without derating.
Body Control Module (BCM)	Electric Power Steering (EPS)
Use Scenario: Load switching for interior lighting, window lift motors, and HVAC blower fans in BCMs. IC Role / Device Role / Timing Role: Single N-channel MOSFET used in high-side configuration with integrated charge pump or in low-side with microcontroller GPIO. Use Value: AEC-Q101 qualification and 100% UIS testing guarantee long-term reliability across 15+ year vehicle lifecycles.	Use Scenario: H-bridge half-bridge leg in EPS motor phase drivers requiring bidirectional current handling. IC Role / Device Role / Timing Role: High-efficiency switching element supporting >20 kHz PWM with low Q_rr (12–24 nC) body diode. Use Value: Low reverse recovery charge reduces shoot-through risk and EMI during freewheeling transitions.

Engine Control Unit (ECU)

Transmission Control Module (TCM)

Use Scenario: High-side switching of fuel injectors and ignition coils in gasoline/diesel ECUs operating at ambient up to 125 °C.

IC Role / Device Role / Timing Role: Power switch controlling pulsed 12 V loads with precise timing resolution down to 10 μs.

Use Value: 0.0095 Ω R_DS(on) minimizes injector coil heating and improves duty cycle accuracy over temperature.

Use Scenario: Solenoid driver for hydraulic pressure control valves in automatic transmissions.

IC Role / Device Role / Timing Role: Low-side switch enabling PWM-controlled current regulation (0–2 A) with fast turn-off (<12 ns fall time).

Use Value: 175 °C max junction temperature ensures stable operation near hot gearbox housings without derating.

Body Control Module (BCM)

Electric Power Steering (EPS)

Use Scenario: Load switching for interior lighting, window lift motors, and HVAC blower fans in BCMs.

IC Role / Device Role / Timing Role: Single N-channel MOSFET used in high-side configuration with integrated charge pump or in low-side with microcontroller GPIO.

Use Value: AEC-Q101 qualification and 100% UIS testing guarantee long-term reliability across 15+ year vehicle lifecycles.

Use Scenario: H-bridge half-bridge leg in EPS motor phase drivers requiring bidirectional current handling.

IC Role / Device Role / Timing Role: High-efficiency switching element supporting >20 kHz PWM with low Q_rr (12–24 nC) body diode.

Use Value: Low reverse recovery charge reduces shoot-through risk and EMI during freewheeling transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.012 Ω @ 10 V; SO-8 package; R_thJA = 62 °C/W; not AEC-Q101 qualified.	Limited to non-automotive industrial or consumer power supplies due to lack of automotive qualification.	Select only if AEC-Q101 is not required and SO-8 layout is already established.
STL220N4F7AG	R_DS(on) = 0.0037 Ω @ 10 V; PowerFLAT 5x6 package; AEC-Q101 qualified; higher current rating (220 A pulsed).	Better suited for high-power EPS or inverters where lower R_DS(on) justifies larger footprint and cost premium.	Choose when thermal budget is tighter and PCB area allows 5x6 mm package.

Compared with IRF7470PBF and STL220N4F7AG, SQS484CENW-T1_GE3 delivers optimal balance of automotive qualification, thermal performance in a 3.3 mm × 3.3 mm footprint, and proven robustness in under-hood environments-making it ideal for mid-power automotive switches where size, reliability, and cost must all be tightly controlled.

Availability

SQS484CENW-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, transmission control modules, and body control modules requiring stable component supply across extended automotive production lifecycles.

Supply support for SQS484CENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQS484CENW-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK family, designed specifically for high-temperature, high-reliability power switching in engine, chassis, and body electronics.

FAQ

What is the maximum junction temperature rating for SQS484CENW-T1_GE3?

The SQS484CENW-T1_GE3 has a maximum operating junction temperature of +175 °C, validated per AEC-Q101 stress tests. This rating enables reliable operation in under-hood environments such as engine control units and transmission control modules where ambient temperatures exceed 125 °C. The device maintains specified R_DS(on) and switching parameters up to this limit, with derating applied above T_C = 125 °C per the datasheet thermal curves.

Is SQS484CENW-T1_GE3 suitable for high-frequency PWM applications?

Yes, SQS484CENW-T1_GE3 supports high-frequency PWM operation up to several hundred kHz due to its low gate charge (Q_g = 27 nC typ.), fast switching times (t_r = 2.4 ns typ., t_f = 7.2 ns typ.), and low output capacitance (C_oss = 193 pF typ.). These characteristics reduce switching losses and improve efficiency in DC-DC converters and motor control stages where switching frequency exceeds 200 kHz.

Does SQS484CENW-T1_GE3 have an integrated body diode, and what are its key parameters?

Yes, SQS484CENW-T1_GE3 includes an integrated body diode with V_SD = 0.82 V (typ.) at I_F = 10 A and V_GS = 0 V, reverse recovery time t_rr = 18 ns (typ.), and Q_rr = 12 nC (typ.). These values support efficient freewheeling in synchronous buck converters and reduce voltage spikes during inductive load switching in automotive solenoid drivers.

What is the gate threshold voltage range for SQS484CENW-T1_GE3, and how does it affect drive compatibility?

The gate threshold voltage V_GS(th) for SQS484CENW-T1_GE3 is specified from 1.5 V to 2.5 V at I_D = 250 μA. This low-threshold range ensures full enhancement with standard 3.3 V or 5 V logic-level gate drivers, eliminating the need for external level shifters in most automotive microcontroller interfaces while maintaining noise immunity through controlled turn-on behavior.

How is thermal management handled in the PowerPAK 1212-8W package of SQS484CENW-T1_GE3?

The SQS484CENW-T1_GE3 uses a PowerPAK 1212-8W package with an exposed drain copper paddle on the bottom side, providing a low-resistance thermal path to the PCB. With R_thJC = 2.4 °C/W and R_thJA = 81 °C/W on a 1"² FR4 board, effective cooling relies on proper copper land design per Vishay Application Note AN826-specifically, a minimum 2.235 mm × 3.860 mm thermal pad with thermal vias to internal ground planes.

SQS484CENW-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8W

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8W

SQS484CENW-T1_GE3 FAQ

1.How can I place an order for SQS484CENW-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQS484CENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQS484CENW-T1_GE3 reliable?

The price and inventory of SQS484CENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS484CENW-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQS484CENW-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS484CENW-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQS484CENW-T1_GE3?

SQS484CENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQS484CENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQS484CENW-T1_GE3?

For technical support, including SQS484CENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS484CENW-T1_GE3 requirements.

6.How does Aetrix verify that SQS484CENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQS484CENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS484CENW-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQS484CENW-T1_GE3?

All SQS484CENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS484CENW-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQS484CENW-T1_GE3 part is unused and in its original packaging.

Return procedure for SQS484CENW-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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