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Vishay Siliconix SQS484EN-T1_GE3
- Part No.:
- SQS484EN-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SQS484EN-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 16A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,518
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Product details
Overview
SQS484EN-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 16 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature. It features RDS(on) of 9 mΩ at VGS = 10 V and 10 mΩ at VGS = 4.5 V, and is housed in the thermally optimized PowerPAK® 1212-8 leadless package. It serves as a high-efficiency main or synchronous rectifier switch in 12 V automotive DC/DC converters and motor control modules.
For engineers reviewing the SQS484EN-T1_GE3 datasheet, SQS484EN-T1_GE3 pinout, SQS484EN-T1_GE3 application, or SQS484EN-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % Rg and UIS testing, ultra-low RthJC of 2.4 °C/W, and validated performance under pulsed avalanche conditions (EAS = 45 mJ).
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with Qg = 25.5 nC (typ.) and Qgd = 4.0 nC (typ.). Its gate threshold voltage (VGS(th)) is tightly specified at 1.5–2.5 V, enabling robust turn-on with standard 3.3 V or 5 V logic-level drivers in automotive microcontroller interfaces.
The device integrates a body diode with VSD = 0.8–1.2 V at IF = 10 A and ISM = 64 A pulsed rating, supporting bidirectional current handling in H-bridge and regenerative braking circuits. Thermal design leverages the exposed-drain PowerPAK 1212-8 footprint, delivering RthJA = 81 °C/W on 1"² FR4 PCB and enabling high-power density without heatsinks in space-constrained ECUs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage compatible with 12 V automotive battery systems including load dump transients. |
| RDS(on) @ VGS = 10 V | 9 mΩ (typ.) - Enables ≤1.5 W conduction loss at 16 A, critical for thermal management in sealed ECU enclosures. |
| RDS(on) @ VGS = 4.5 V | 10 mΩ (typ.) - Ensures reliable switching with 4.5 V gate drive from automotive MCUs, eliminating need for external level shifters. |
| ID (continuous) | 16 A at TC = 25 °C - Supports high-current loads such as radiator fan drivers and seat motor controllers without derating at ambient. |
| EAS | 45 mJ - Withstands single-pulse inductive energy from solenoid or motor coil flyback without failure, verified per JEDEC JESD24-1. |
| RthJC | 2.4 °C/W - Direct thermal path from die to PCB copper enables >20 W power dissipation with minimal ΔT, reducing need for thermal vias or heatsinks. |
| TJ max | +175 °C - Qualified for under-hood applications where ambient temperatures exceed 125 °C, meeting AEC-Q101 stress test requirements. |
Pinout & Package
PowerPAK® 1212-8 is a surface-mount, leadless package with 8 terminals: four drain (D) pads on one side, one gate (G), and three source (S) terminals - two on the same side as G and one opposite - enabling low-inductance, high-current routing and optimal thermal spreading across PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals provide low-inductance, high-current connection to high-side or low-side switching node; exposed copper bottom enhances thermal transfer to PCB. |
| 5, 6, 7 | Source (S) | Three source terminals reduce source inductance and improve current sharing in high-frequency PWM; S1–S3 connect directly to ground plane or low-side return path. |
| 8 | Gate (G) | Single gate input with Rg = 5–20 Ω (typ.), optimized for stable switching with minimal ringing when driven by 1 Ω gate resistor per datasheet layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use across temperature, humidity, vibration, and lifetime stress tests - required for engine control, ADAS, and body electronics. |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures due to gate oxide defects or avalanche overstress. |
| PowerPAK 1212-8 package | Footprint 3.3 mm × 3.3 mm - 40 % smaller than TSSOP-8 yet delivers 20× better thermal performance than TSSOP-8 and matches SO-8 RthJC. |
| TrenchFET® technology | Enables 9 mΩ RDS(on) at 40 V - achieves higher current density than planar MOSFETs, allowing smaller die size and lower cost without sacrificing efficiency. |
| 175 °C TJ operation | Rated for continuous operation up to +175 °C junction temperature - supports placement near heat sources (e.g., power inductors) in compact power modules. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Controller |
|---|---|
Use Scenario: High-speed, pulse-width modulated switching of 12 V fuel injectors with peak currents up to 12 A and 1 ms on-time. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling injector coil current; operates at 10–20 kHz with <12 ns rise/fall times. Use Value: 10 mΩ RDS(on) at 4.5 V ensures <0.6 W conduction loss at full load, while 45 mJ EAS withstands coil flyback without snubber circuitry. | Use Scenario: Bidirectional PWM control of brushed DC blower motors in climate control systems, requiring reverse-current capability during deceleration. IC Role / Device Role / Timing Role: Half-bridge low-side switch with integrated body diode conducting regenerative current during PWM off-time. Use Value: VSD = 0.8–1.2 V at 10 A enables efficient freewheeling; 64 A ISM rating supports motor stall current without diode failure. |
| 12 V → 5 V/3.3 V Automotive DC/DC Converter | Electronic Power Steering (EPS) Assist Motor Driver |
Use Scenario: Synchronous rectification in buck converter output stage powering infotainment and ADAS sensors. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode; switched at same frequency as primary FET (300–500 kHz). Use Value: 9 mΩ RDS(on) reduces conduction loss by >60 % vs. 40 V Schottky, improving efficiency from 88 % to 93 % at 10 A load. | Use Scenario: High-current half-bridge leg driving 24 V assist motor with peak phase currents exceeding 30 A during torque boost. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter; handles 16 A continuous and 64 A pulsed current with <72 ns turn-off delay. Use Value: RthJC = 2.4 °C/W allows direct mounting to 2 oz. copper plane, limiting ΔT to <40 °C at 20 W dissipation - avoids thermal shutdown during sustained assist. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL8726PBF | RDS(on) = 7.5 mΩ @ 10 V but only rated to 150 °C TJ; no AEC-Q101 qualification; TO-220AB package. | Not suitable for under-hood automotive use; requires heatsink for >10 A continuous operation. | Select only for non-automotive industrial or commercial 12 V systems where qualification and thermal density are not critical. |
| DMTH4007LPSQ-13 | RDS(on) = 7.2 mΩ @ 10 V; AEC-Q101 qualified; PowerDI™ 5060 package; RthJC = 3.0 °C/W. | Higher thermal resistance and larger footprint (5.0 mm × 6.0 mm) than PowerPAK 1212-8; slightly lower EAS (38 mJ). | Preferred when board layout allows larger footprint and marginally lower RDS(on) justifies trade-off in thermal density and package size. |
Compared with IRL8726PBF and DMTH4007LPSQ-13, SQS484EN-T1_GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, and 2.4 °C/W RthJC in a 3.3 mm × 3.3 mm footprint - making it the only option for high-reliability, space-constrained automotive power stages requiring both thermal headroom and transient robustness.
Availability
SQS484EN-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control units, HVAC motor drives, and ADAS power supplies requiring stable component supply across extended production lifecycles and temperature extremes.
Supply support for SQS484EN-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS484EN-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V and 24 V vehicle subsystems operating up to 175 °C junction temperature.
FAQ
What is the maximum gate-source voltage rating for SQS484EN-T1_GE3?
The absolute maximum gate-source voltage (VGS) for SQS484EN-T1_GE3 is ±20 V. Exceeding this rating risks permanent gate oxide damage. In practice, gate drive should be limited to 10 V for optimal RDS(on) and reliability, with transient spikes clamped below ±20 V using Zener protection networks. The SQS484EN-T1_GE3 datasheet specifies VGS(th) between 1.5 V and 2.5 V, confirming compatibility with standard 3.3 V and 5 V logic-level drivers without level shifting.
Is SQS484EN-T1_GE3 suitable for synchronous rectification in automotive DC/DC converters?
Yes, SQS484EN-T1_GE3 is explicitly designed for synchronous rectification in 12 V automotive buck converters. Its 9 mΩ RDS(on) at VGS = 10 V and 10 mΩ at VGS = 4.5 V minimizes conduction loss versus Schottky diodes, while its 25.5 nC total gate charge enables efficient 300–500 kHz switching. The SQS484EN-T1_GE3 body diode forward voltage (VSD = 0.8–1.2 V) and 64 A pulsed source current rating ensure robust freewheeling during dead-time intervals without external diodes.
Does SQS484EN-T1_GE3 require special PCB layout considerations due to its PowerPAK 1212-8 package?
Yes - the PowerPAK 1212-8 package of SQS484EN-T1_GE3 demands specific layout practices. The exposed drain pad (pins 1–4) must be connected to a large copper pour with ≥8 thermal vias (0.3 mm diameter) to inner ground/power planes. Recommended minimum pad dimensions are 2.39 mm × 3.86 mm for drain and 0.99 mm × 1.725 mm for gate/source. The SQS484EN-T1_GE3 datasheet AN822 and Application Note 72597 provide exact land patterns to maximize thermal performance and solder joint reliability.
What is the avalanche energy rating of SQS484EN-T1_GE3 and how is it validated?
SQS484EN-T1_GE3 is rated for 45 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, tested per JEDEC JESD24-1. This rating is confirmed through 100 % unclamped inductive switching (UIS) screening on every production lot. The SQS484EN-T1_GE3 can safely absorb inductive flyback energy from automotive solenoids, motors, and relays without degradation - a critical requirement for AEC-Q101 compliance and field reliability in harsh environments.
How does the thermal performance of SQS484EN-T1_GE3 compare to standard SO-8 MOSFETs?
SQS484EN-T1_GE3 delivers 20× lower junction-to-ambient thermal resistance than TSSOP-8 and matches SO-8's RthJC (2.4 °C/W) despite being over 40 % smaller. On a 1"² FR4 PCB, its RthJA is 81 °C/W versus >160 °C/W for TSSOP-8. This means at 2 W dissipation, SQS484EN-T1_GE3 junction temperature rises only ~4.8 °C above board temperature, whereas TSSOP-8 would rise >40 °C - directly preserving RDS(on) stability and enabling higher current density. The SQS484EN-T1_GE3 PowerPAK 1212-8 construction makes this possible via direct die-to-PCB thermal conduction.
SQS484EN-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 16.4A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 39 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1855 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 62W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SQS484EN-T1_GE3 FAQ
1.How can I place an order for SQS484EN-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS484EN-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS484EN-T1_GE3 reliable?
The price and inventory of SQS484EN-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS484EN-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS484EN-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS484EN-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS484EN-T1_GE3?
SQS484EN-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS484EN-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS484EN-T1_GE3?
For technical support, including SQS484EN-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS484EN-T1_GE3 requirements.
6.How does Aetrix verify that SQS484EN-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS484EN-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS484EN-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS484EN-T1_GE3?
All SQS484EN-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS484EN-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS484EN-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS484EN-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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