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Vishay Siliconix SQS840CENW-T1_GE3
- Part No.:
- SQS840CENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8W
- Datasheet:
-
SQS840CENW-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 12A PPAK 1212-8W
- Quantity:
- Payment:
- Shipping:
Inventory:3,829
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Product details
Overview
SQS840CENW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 12 A continuous drain current at 25 °C, and 0.020 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control and DC-DC converter switching in electric power steering and body control modules.
For engineers reviewing the SQS840CENW-T1_GE3 datasheet, SQS840CENW-T1_GE3 pinout, SQS840CENW-T1_GE3 application, or SQS840CENW-T1_GE3 equivalent, key selection criteria include its PowerPAK 1212-8W leadless package thermal performance (RthJC = 4.5 °C/W), 100 % Rg and UIS tested reliability, and low gate charge (Qg = 15–22.5 nC) enabling high-frequency PWM operation with reduced drive loss.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in automotive 12 V systems. Its 4.5 V gate threshold (VGS(th) = 1.5–2.5 V) ensures robust turn-on with standard logic-level drivers, while the integrated body diode supports synchronous rectification and freewheeling in buck converters and H-bridge motor drives.
The device features a thermally enhanced PowerPAK 1212-8W package with exposed drain copper on the bottom side for direct PCB heat sinking. Its 19 A single-pulse avalanche rating (EAS = 18 mJ) and 100 % UIS testing provide validated ruggedness against inductive load transients in automotive solenoid and fan control circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V automotive battery systems with load dump margin |
| RDS(on) @ VGS = 10 V | 0.020 Ω - Enables ≤1.8 W conduction loss at 9.5 A, critical for thermally constrained ECUs |
| ID Continuous | 12 A @ TC = 25 °C - Sustained current capability with FR4 PCB mounting per datasheet test condition |
| Qg | 15–22.5 nC - Low gate charge reduces driver power and enables >500 kHz switching in DC-DC stages |
| TJ Range | −55 to +175 °C - Qualified for under-hood placement without derating in engine control units |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive semiconductor reliability (vibration, temperature cycling, HTRB) |
| RthJC | 4.5 °C/W - Enables efficient heat transfer to heatsink or copper plane, supporting high-power density designs |
Pinout & Package
Package: PowerPAK® 1212-8W - 3.3 mm × 3.3 mm leadless surface-mount package with exposed drain pad on bottom side for thermal management. No leads; soldered via bottom-side copper area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 4 | Gate (G) | Single gate input with Rg = 1.6–5 Ω - Supports stable gate drive without external damping resistor |
| 6, 7, 8 | Drain (D) | Three drain terminals connected to exposed bottom copper - primary thermal path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables lower RDS(on) per die area than planar MOSFETs, improving power density in space-constrained modules |
| 100 % Rg and UIS tested | Each unit verified for gate resistance consistency and unclamped inductive switching robustness - no screening failures in production |
| PowerPAK 1212-8W package | Thermal resistance RthJA = 81 °C/W on 1"² FR4 PCB - 3× better than SO-8 for same footprint, enabling smaller heatsinks |
| Body diode trr = 18–36 ns | Fast reverse recovery minimizes shoot-through risk and switching loss in synchronous rectifier applications |
| VGS = ±20 V rating | Withstands gate transients during ESD events and hot-plug conditions without degradation |
Applications
| Electric Power Steering (EPS) | Automotive DC-DC Converters |
|---|---|
Use Scenario: High-side switch in three-phase EPS motor inverter bridge, operating continuously at 150 °C ambient. IC Role / Device Role / Timing Role: N-channel power switch controlling phase current with PWM frequency up to 20 kHz. Use Value: 0.022 Ω RDS(on) @ 4.5 V ensures full enhancement using MCU GPIO, reducing gate driver BOM cost. |
Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V buck converter for ADAS camera module power supply. IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode to improve efficiency above 3 A load. Use Value: Body diode VSD = 0.82–1.2 V and Qrr = 12–24 nC enable >92 % efficiency at 1 MHz switching with minimal ringing. |
| Engine Control Unit (ECU) Solenoid Drivers | Body Control Module (BCM) Fan Control |
Use Scenario: Driving fuel injector or turbocharger VGT solenoid with 100 ms pulse width and 2 A peak current. IC Role / Device Role / Timing Role: Low-side switch handling inductive kickback with integrated avalanche energy rating. Use Value: 18 mJ EAS and 19 A IAS eliminate need for external TVS, simplifying layout and improving reliability. |
Use Scenario: PWM-controlled radiator fan driver in passenger compartment, subject to 85 °C ambient and vibration. IC Role / Device Role / Timing Role: High-current switching element in half-bridge configuration with PWM dimming. Use Value: AEC-Q101 qualification and 175 °C TJ rating ensure long-term stability without thermal shutdown in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH7107TRPBF | RDS(on) = 0.019 Ω @ 10 V but only rated to 150 °C TJ; no AEC-Q101 documentation in public datasheet | Lacks formal automotive qualification - suitable for industrial motor drives but not safety-critical ECU use | Select when AEC-Q101 is not mandated and lower RDS(on) is prioritized over junction temperature margin |
| DMTH4007LPSQ-13 | Same PowerPAK 1212-8W package and 40 V rating; RDS(on) = 0.023 Ω @ 10 V; AEC-Q101 qualified with 175 °C rating | Higher RDS(on) increases conduction loss by ~15 % at 10 A - acceptable where thermal headroom exists | Choose for second-source assurance with identical footprint and qualification, accepting minor efficiency trade-off |
Compared with IRFH7107TRPBF and DMTH4007LPSQ-13, the SQS840CENW-T1_GE3 delivers optimal balance of low RDS(on), full AEC-Q101 compliance, and 175 °C operation - making it preferred for thermally aggressive, safety-relevant automotive subsystems where qualification traceability is mandatory.
Availability
SQS840CENW-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering, automotive DC-DC conversion, and engine control unit applications requiring stable component supply across extended temperature and lifetime requirements.
Supply support for SQS840CENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS840CENW-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK series, engineered specifically for high-efficiency, high-temperature switching in next-generation vehicle electrification systems.
FAQ
What is the maximum continuous drain current rating for SQS840CENW-T1_GE3 at 125 °C case temperature?
The SQS840CENW-T1_GE3 maintains a continuous drain current rating of 12 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and AEC-Q101 qualification for sustained operation in high-ambient environments such as engine compartments. The SQS840CENW-T1_GE3 achieves this without derating due to its low RthJC of 4.5 °C/W and optimized PowerPAK 1212-8W package construction.
Is SQS840CENW-T1_GE3 pin-compatible with other PowerPAK 1212-8W MOSFETs like SQJQ480E?
No, SQS840CENW-T1_GE3 is not pin-compatible with SQJQ480E. While both use the PowerPAK 1212-8W footprint, SQJQ480E has a different pin assignment (e.g., Gate on Pin 1) and is a dual-N device. The SQS840CENW-T1_GE3 uses Pins 1–3 and 5 for Source, Pin 4 for Gate, and Pins 6–8 for Drain - a configuration unique to its single-N trench design. Always verify pinout from the official Vishay datasheet before board reuse.
Does SQS840CENW-T1_GE3 require a gate resistor for driving with a microcontroller GPIO?
Yes, a small gate resistor (typically 5–22 Ω) is recommended when driving the SQS840CENW-T1_GE3 directly from an MCU GPIO to dampen ringing and limit peak gate current. Although the SQS840CENW-T1_GE3 has an internal Rg of 1.6–5 Ω, external resistance improves EMI performance and prevents overshoot during fast edge transitions, especially in noisy automotive environments where signal integrity is critical.
What is the body diode forward voltage of SQS840CENW-T1_GE3 at 4.8 A and room temperature?
The body diode forward voltage (VSD) of the SQS840CENW-T1_GE3 is 0.82–1.2 V at IF = 4.8 A and VGS = 0 V, as measured per the datasheet's Source-Drain Diode Ratings section. This low VSD supports efficient freewheeling in H-bridge motor drivers and reduces conduction loss compared to external Schottky diodes in compact layouts. The SQS840CENW-T1_GE3 maintains this performance across its full −55 to +175 °C operating range.
Can SQS840CENW-T1_GE3 be used in a synchronous buck converter as the low-side switch?
Yes, the SQS840CENW-T1_GE3 is well-suited as the low-side switch in synchronous buck converters for automotive applications. Its 0.022 Ω RDS(on) at VGS = 4.5 V ensures full enhancement with standard logic-level drivers, and its 18–36 ns body diode reverse recovery time (trr) minimizes cross-conduction loss. The SQS840CENW-T1_GE3 also provides 12 A continuous current and 24 A pulsed capability, supporting output currents up to 10 A in thermally managed designs.
SQS840CENW-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8W
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1031 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 33W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8W
SQS840CENW-T1_GE3 FAQ
1.How can I place an order for SQS840CENW-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS840CENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS840CENW-T1_GE3 reliable?
The price and inventory of SQS840CENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS840CENW-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS840CENW-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS840CENW-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS840CENW-T1_GE3?
SQS840CENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS840CENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS840CENW-T1_GE3?
For technical support, including SQS840CENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS840CENW-T1_GE3 requirements.
6.How does Aetrix verify that SQS840CENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS840CENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS840CENW-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS840CENW-T1_GE3?
All SQS840CENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS840CENW-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS840CENW-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS840CENW-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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