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Vishay Siliconix SQS840EN-T1_BE3
- Part No.:
- SQS840EN-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SQS840EN-T1_BE3.pdf
- Description:
- N-CHANNEL 40-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:8,928
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Product details
Overview
SQS840EN-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel 40 V MOSFET in PowerPAK® 1212-8 package, delivering RDS(on) = 0.0200 Ω at VGS = 10 V and 0.0300 Ω at VGS = 4.5 V, rated for continuous 12 A drain current and 175 °C junction operation - used in high-efficiency DC-DC converters and motor control stages in engine management systems.
For engineers reviewing the SQS840EN-T1_BE3 datasheet, SQS840EN-T1_BE3 pinout, SQS840EN-T1_BE3 application, or SQS840EN-T1_BE3 equivalent, key selection criteria include AEC-Q101 qualification, ultra-low RDS(on) at 4.5 V gate drive, 100 % Rg and UIS tested reliability, and thermal performance enabled by exposed-drain PowerPAK 1212-8 packaging.
Technical Context
This device uses TrenchFET® technology to achieve low on-resistance with fast switching dynamics: total gate charge Qg = 15–22.5 nC (VGS = 10 V), gate resistance Rg = 1.6–5 Ω, and turn-off delay td(off) = 21.6–32.4 ns under standard test conditions (VDD = 20 V, Rg = 6 Ω).
It features a robust body diode with VSD = 0.8–1.2 V at IF = 4.8 A and supports single-pulse avalanche energy EAS = 18 mJ (L = 0.1 mH), enabling reliable operation in inductive load switching and regenerative braking circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - maximum drain-source blocking voltage for 12 V automotive rail and 24 V industrial supply applications |
| RDS(on) @ VGS = 10 V | 0.0200 Ω - enables <1.8 W conduction loss at 12 A, critical for high-current power stages |
| RDS(on) @ VGS = 4.5 V | 0.0300 Ω - ensures stable operation with 3.3 V/5 V logic-level gate drivers in modern microcontroller-based systems |
| ID Continuous | 12 A - supported at TC = 25 °C with PCB mount; derates to 12 A at TC = 125 °C due to thermal design margin |
| Junction Temp Range | −55 °C to +175 °C - meets automotive under-hood temperature requirements per AEC-Q101 stress testing |
| RthJC | 4.5 °C/W - low junction-to-case thermal resistance enables direct heat transfer to PCB copper or heatsink |
| Qg | 15–22.5 nC - determines gate driver power requirement and switching loss trade-off in PWM frequency scaling |
Pinout & Package
PowerPAK® 1212-8 is a leadless surface-mount package with 8 terminals, 4 drain pads (pins 1, 2, 3, 5), 1 gate (pin 4), and 3 source pads (pins 6, 7, 8). The exposed bottom-side drain pad provides primary thermal path and mechanical anchoring.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Drain (D) | High-current output node; electrically and thermally connected to large copper area on PCB for heat dissipation |
| 4 | Gate (G) | Control input; requires low-impedance gate driver to manage Qg = 15–22.5 nC and minimize switching losses |
| 6, 7, 8 | Source (S) | Return path for load current; tied to power ground plane; forms Kelvin sense path when separated from power source |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HAST, and mechanical shock per JESD22 standards |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® architecture | Enables lower RDS(on) per die area vs. planar MOSFETs, improving power density in space-constrained modules |
| Exposed drain thermal pad | Reduces RthJC to 4.5 °C/W and allows >90 % of heat to flow directly into PCB, lowering junction temperature rise |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material content requirements |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Control |
|---|---|
Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 12 A and pulse widths down to 1 ms. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization/de-energization; handles reverse recovery and flyback energy via integrated body diode. Use Value: RDS(on) = 0.0300 Ω @ 4.5 V ensures minimal voltage drop during microcontroller-driven 5 V gate drive, preserving injector solenoid voltage margin. |
Use Scenario: PWM-controlled 24 V blower motor in passenger cabin HVAC system operating continuously at ambient up to 85 °C. IC Role / Device Role / Timing Role: N-channel high-side or low-side switch in half-bridge topology; manages 10 A continuous load with thermal stability. Use Value: 175 °C rated junction and RthJC = 4.5 °C/W allow sustained operation without derating in confined dashboard enclosures. |
| 12 V–48 V Automotive DC-DC Converter Primary Switch | Electric Power Steering (EPS) Assist Motor Phase Leg |
Use Scenario: Synchronous buck converter stepping 48 V battery down to 12 V for infotainment and ADAS subsystems. IC Role / Device Role / Timing Role: High-frequency (200–500 kHz) primary-side switch; optimized for low Qg and fast tf = 6.4–9.6 ns to reduce switching loss. Use Value: Qg = 15–22.5 nC and Crss = 58–73 pF enable efficient operation at elevated frequencies while maintaining EMI compliance. |
Use Scenario: Three-phase inverter driving 300 W assist motor in column-mounted EPS module with vibration and thermal cycling. IC Role / Device Role / Timing Role: Low-side phase leg switch in 60 kHz three-phase bridge; withstands repetitive UIS events during torque transients. Use Value: 100 % UIS tested and EAS = 18 mJ ensure survivability during motor stall and sudden load reversal without external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR870DP-T1-GE3 | RDS(on) = 0.022 Ω @ 10 V, but higher Qg = 32 nC and larger PowerSO-8 package (RthJC = 3.5 °C/W) | Less suitable for high-frequency DC-DC where gate drive loss dominates; better for lower-frequency, higher-current motor drives | Select when board layout accommodates larger footprint and thermal design prioritizes case-to-heatsink over PCB conduction |
| IRFH8325TRPBF | RDS(on) = 0.023 Ω @ 10 V, same PowerPAK 1212-8, but only AEC-Q101 compliant (not qualified) and no 100 % UIS test data published | Acceptable for non-safety-critical consumer or industrial 12 V loads; not recommended for ASIL-B/C ECU functions | Select only after internal validation of UIS robustness and long-term high-temp reliability in target application |
Compared with SiR870DP-T1-GE3 and IRFH8325TRPBF, SQS840EN-T1_BE3 offers the lowest combination of RDS(on) at 4.5 V, verified UIS margin, and smallest thermal footprint - making it optimal for space- and efficiency-constrained automotive power stages requiring production-grade AEC-Q101 assurance.
Availability
SQS840EN-T1_BE3 is available at Aetrix Electronics and suitable for automotive engine control units, HVAC motor drives, and 48 V DC-DC converters requiring stable component supply across extended product lifecycles.
Supply support for SQS840EN-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency performance.
The SQS840EN-T1_BE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK 1212-8 family, engineered specifically for under-hood power switching where thermal density, AEC-Q101 compliance, and gate-drive compatibility with 3.3 V/5 V MCUs are mandatory.
FAQ
What is the maximum gate-source voltage rating for SQS840EN-T1_BE3?
The absolute maximum VGS rating for SQS840EN-T1_BE3 is ±20 V, as specified in the Absolute Maximum Ratings table. Exceeding this voltage risks permanent gate oxide damage. For reliable operation, gate drive circuits should be clamped to ≤ ±15 V, especially during transient conditions or hot-plug events in automotive environments.
Is SQS840EN-T1_BE3 suitable for high-frequency switching above 1 MHz?
SQS840EN-T1_BE3 supports switching up to ~1 MHz in practical designs, with measured tf = 6.4–9.6 ns and Ciss = 825–1031 pF. However, gate drive strength must scale with Qg = 15–22.5 nC to maintain clean edges; at 1 MHz, average gate power exceeds 200 mW, requiring careful thermal design of the driver IC and PCB layout.
Does SQS840EN-T1_BE3 have a built-in ESD protection diode on the gate?
No - SQS840EN-T1_BE3 does not integrate gate ESD protection diodes. Its gate oxide is rated for ±100 nA IGSS leakage at ±20 V, indicating standard thin-oxide construction. External gate protection (e.g., 12 V Zener clamp) is required in systems exposed to IEC 61000-4-2 level 4 (±8 kV contact) or automotive ESD events.
How is the thermal performance of SQS840EN-T1_BE3 affected by PCB copper area?
Thermal resistance RthJA drops from 81 °C/W (1"² FR4) to ~45 °C/W with ≥0.3 in² of 2 oz. copper spreading under the drain pad. Beyond 0.5 in², diminishing returns occur. The exposed drain pad dominates heat transfer - so thermal vias to inner ground planes and solid backside copper significantly improve steady-state junction temperature in real-world layouts.
Can SQS840EN-T1_BE3 replace older SO-8 MOSFETs without PCB redesign?
No - SQS840EN-T1_BE3 uses PowerPAK 1212-8 (3.3 mm × 3.3 mm), which is incompatible with SO-8 footprints. It shares pinout symmetry with PowerPAK SO-8 but has different pad geometry, land pattern, and solder profile requirements (peak 240 °C, 20–40 s dwell). A new PCB layout using Vishay's AN826 recommended pads is mandatory.
SQS840EN-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1031 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 33W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SQS840EN-T1_BE3 FAQ
1.How can I place an order for SQS840EN-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS840EN-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS840EN-T1_BE3 reliable?
The price and inventory of SQS840EN-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS840EN-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQS840EN-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS840EN-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS840EN-T1_BE3?
SQS840EN-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS840EN-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS840EN-T1_BE3?
For technical support, including SQS840EN-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS840EN-T1_BE3 requirements.
6.How does Aetrix verify that SQS840EN-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQS840EN-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS840EN-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQS840EN-T1_BE3?
All SQS840EN-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS840EN-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS840EN-T1_BE3 part is unused and in its original packaging.
Return procedure for SQS840EN-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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