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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQS840EN-T1_GE3

Name: SQS840EN-T1_GE3
Brand: Vishay Siliconix
SKU: SQS840EN-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQS840EN-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SQS840EN-T1_GE3.pdf

Description:: MOSFET N-CH 40V 12A PPAK1212-8

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Product details

Overview

SQS840EN-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 40 V MOSFET in PowerPAK® 1212-8 package, delivering R_DS(on) = 0.020 Ω at V_GS = 10 V and 12 A continuous drain current at T_C = 125 °C. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for engine control, powertrain, and body electronics.

For engineers reviewing the SQS840EN-T1_GE3 datasheet, SQS840EN-T1_GE3 pinout, SQS840EN-T1_GE3 application, or SQS840EN-T1_GE3 equivalent, key selection criteria include its trench-based low-R_DS(on) performance, 100 % UIS testing, leadless thermal-enhanced footprint, and validated operation under automotive thermal cycling and humidity stress conditions.

Technical Context

This MOSFET uses Vishay's TrenchFET® technology to achieve ultra-low on-resistance in a compact 3.3 mm × 3.3 mm leadless package. Its gate threshold voltage (1.5–2.5 V) enables robust 4.5 V logic-level drive compatibility while maintaining tight V_GS(th) distribution across temperature.

The device features fully characterized dynamic parameters including Q_g = 15–22.5 nC, C_iss = 825–1031 pF, and fast switching with t_d(on) ≤ 11.4 ns and t_f ≤ 9.6 ns - optimized for high-frequency DC/DC converters and motor gate drivers where conduction and switching losses must be jointly minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails and transient clamping requirements.
R_DS(on) @ 10 V	0.020 Ω - Enables <1 W conduction loss at 7.5 A, critical for thermally constrained under-hood modules.
R_DS(on) @ 4.5 V	0.030 Ω - Ensures reliable turn-on with standard 5 V microcontroller GPIO or automotive PMIC outputs.
I_D (cont.)	12 A @ T_C = 125 °C - Sustains full load current in high-ambient environments without derating.
Junction Temp	−55 to +175 °C - Validated for engine bay, transmission control, and EPS applications per AEC-Q101.
R_thJC	4.5 °C/W - Low junction-to-case resistance enables direct thermal coupling to PCB copper or heatsink for efficient heat extraction.
Q_g	15–22.5 nC - Optimized gate charge supports efficient PWM switching up to 500 kHz in buck regulators.

Pinout & Package

PowerPAK® 1212-8 is a surface-mount, leadless, thermally enhanced package with exposed drain pad on the bottom side. Dimensions: 3.30 mm × 3.30 mm × 1.04 mm (L × W × H), footprint compatible with TSOP-6 but with >2× die area and ~20× better thermal performance than TSSOP-8.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain (D)	All eight pins connect to internal drain metallization and exposed bottom pad - forms primary current path and main thermal conduction path to PCB.
4, 5 (Gate)	Gate (G)	Two dedicated gate terminals reduce gate loop inductance and improve switching stability in high-dI/dt applications.
1, 2, 3 (Source)	Source (S)	Three source terminals provide low-inductance return path and support Kelvin sensing in precision current monitoring designs.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use including temperature cycling, HAST, and mechanical shock - eliminates need for additional qualification by Tier-1 suppliers.
100 % UIS tested	Each unit undergoes unclamped inductive switching stress test - guarantees ruggedness in motor drive and solenoid control with inductive kickback.
TrenchFET® architecture	Enables 0.020 Ω R_DS(on) in 3.3 mm × 3.3 mm footprint - reduces board space vs. SO-8 equivalents while improving power density.
Exposed drain pad	Direct thermal interface to PCB copper - achieves R_thJA = 81 °C/W on 1"² FR4, enabling higher power handling without external heatsinks.
Low gate resistance	R_g = 1.6–5 Ω - minimizes gate driver power loss and improves EMI behavior during edge transitions.

Applications

Engine Control Unit (ECU)	Electric Power Steering (EPS)
Use Scenario: High-side switch for fuel injector or ignition coil driver in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Power switch controlling 12 V inductive loads with precise pulse-width modulation at 1–10 kHz. Use Value: 175 °C rating ensures reliability near hot engine blocks; low R_DS(on) limits self-heating during extended duty cycles.	Use Scenario: Low-side MOSFET in three-phase inverter for brushless DC assist motor. IC Role / Device Role / Timing Role: Phase-leg switching element operating at 20–40 kHz PWM with fast fall time (≤9.6 ns) to minimize dead-time losses. Use Value: Dual gate-source terminals enable clean gate drive routing; 100 % UIS test ensures survival during motor regeneration events.
Body Control Module (BCM)	Advanced Driver Assistance Systems (ADAS)
Use Scenario: Load switch for LED headlamp matrix or HVAC blower motor. IC Role / Device Role / Timing Role: Robust power delivery switch supporting PWM dimming and overcurrent protection via integrated sense capability. Use Value: AEC-Q101 qualification and −55 °C start-up capability ensure compliance with ISO 16750-4 for cold cranking environments.	Use Scenario: Power supply switch in radar sensor module requiring stable 5 V/3.3 V rail sequencing. IC Role / Device Role / Timing Role: Hot-swap and reverse-polarity protection switch with fast turn-off (<32.4 ns delay) for fault containment. Use Value: Low Q_gd/Q_gs ratio (≈1.04) improves Miller immunity in noisy RF environments; 4.5 V drive supports PMIC-controlled startup sequences.

Engine Control Unit (ECU)

Electric Power Steering (EPS)

Use Scenario: High-side switch for fuel injector or ignition coil driver in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Power switch controlling 12 V inductive loads with precise pulse-width modulation at 1–10 kHz.

Use Value: 175 °C rating ensures reliability near hot engine blocks; low R_DS(on) limits self-heating during extended duty cycles.

Use Scenario: Low-side MOSFET in three-phase inverter for brushless DC assist motor.

IC Role / Device Role / Timing Role: Phase-leg switching element operating at 20–40 kHz PWM with fast fall time (≤9.6 ns) to minimize dead-time losses.

Use Value: Dual gate-source terminals enable clean gate drive routing; 100 % UIS test ensures survival during motor regeneration events.

Body Control Module (BCM)

Advanced Driver Assistance Systems (ADAS)

Use Scenario: Load switch for LED headlamp matrix or HVAC blower motor.

IC Role / Device Role / Timing Role: Robust power delivery switch supporting PWM dimming and overcurrent protection via integrated sense capability.

Use Value: AEC-Q101 qualification and −55 °C start-up capability ensure compliance with ISO 16750-4 for cold cranking environments.

Use Scenario: Power supply switch in radar sensor module requiring stable 5 V/3.3 V rail sequencing.

IC Role / Device Role / Timing Role: Hot-swap and reverse-polarity protection switch with fast turn-off (<32.4 ns delay) for fault containment.

Use Value: Low Q_gd/Q_gs ratio (≈1.04) improves Miller immunity in noisy RF environments; 4.5 V drive supports PMIC-controlled startup sequences.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 0.035 Ω @ 4.5 V; 1.25 A I_D; SOT-23 package; no AEC-Q101 qualification	Lower current, smaller package - suitable only for low-power signal switching, not automotive power stages	Select only for non-automotive, low-current (<2 A), cost-sensitive consumer applications.
DMN3029LSD-13	R_DS(on) = 0.029 Ω @ 4.5 V; 6.5 A I_D; PowerDI3333 package; AEC-Q101 qualified	Lower current rating and higher R_DS(on) - acceptable for auxiliary loads but insufficient for main motor phases	Use where space constraints allow larger 3.3 mm × 3.3 mm footprint but thermal budget is tighter than SQS840EN-T1_GE3 allows.

Compared with IRLML6344TRPBF and DMN3029LSD-13, SQS840EN-T1_GE3 delivers 12 A continuous current with 0.030 Ω R_DS(on) at 4.5 V in an AEC-Q101-qualified PowerPAK 1212-8 - making it uniquely suited for high-reliability, high-current automotive power switching where thermal margin and ruggedness are non-negotiable.

Availability

SQS840EN-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and body control modules requiring stable component supply across long production lifecycles and global manufacturing sites.

Supply support for SQS840EN-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQS840EN-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® family, engineered specifically for high-efficiency, high-reliability power switching in under-hood and safety-critical vehicle subsystems.

FAQ

What is the maximum junction temperature rating for SQS840EN-T1_GE3?

The SQS840EN-T1_GE3 has a specified operating junction temperature range of −55 °C to +175 °C, verified per AEC-Q101 stress testing. This rating enables deployment in high-ambient locations such as engine compartments and transmission control units where ambient temperatures exceed 125 °C.

Is SQS840EN-T1_GE3 suitable for 4.5 V logic-level gate drive?

Yes, SQS840EN-T1_GE3 is fully characterized at V_GS = 4.5 V, with R_DS(on) = 0.030 Ω max at I_D = 6.5 A and T_J = 25 °C. Its gate threshold voltage (1.5–2.5 V) ensures strong enhancement-mode turn-on with standard 5 V microcontroller outputs or automotive PMICs.

Does SQS840EN-T1_GE3 have built-in avalanche ruggedness?

Yes, SQS840EN-T1_GE3 is 100 % tested for unclamped inductive switching (UIS), with single-pulse avalanche energy E_AS = 18 mJ and peak avalanche current I_AS = 19 A. This ensures survivability during inductive load switching transients common in motor and solenoid applications.

What is the thermal resistance from junction to case for SQS840EN-T1_GE3?

The junction-to-case (drain) thermal resistance R_thJC of SQS840EN-T1_GE3 is 4.5 °C/W, measured under standard test conditions. This low value reflects the exposed drain pad design and enables efficient heat transfer to the PCB or heatsink in high-power automotive modules.

How does the PowerPAK 1212-8 package of SQS840EN-T1_GE3 compare to SO-8 in thermal performance?

SQS840EN-T1_GE3 in PowerPAK 1212-8 achieves R_thJC = 4.5 °C/W versus ~20 °C/W for typical SO-8 MOSFETs - over 4× better thermal conduction. Its 3.3 mm × 3.3 mm footprint is also >40 % smaller than TSSOP-8 while supporting higher current density and lower thermal rise.

SQS840EN-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1031 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SQS840EN-T1_GE3 FAQ

1.How can I place an order for SQS840EN-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQS840EN-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQS840EN-T1_GE3 reliable?

The price and inventory of SQS840EN-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS840EN-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQS840EN-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS840EN-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQS840EN-T1_GE3?

SQS840EN-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQS840EN-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQS840EN-T1_GE3?

For technical support, including SQS840EN-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS840EN-T1_GE3 requirements.

6.How does Aetrix verify that SQS840EN-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQS840EN-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS840EN-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQS840EN-T1_GE3?

All SQS840EN-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS840EN-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQS840EN-T1_GE3 part is unused and in its original packaging.

Return procedure for SQS840EN-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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