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Vishay Siliconix SQS850EN-T1_BE3
- Part No.:
- SQS850EN-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SQS850EN-T1_BE3.pdf
- Description:
- N-CHANNEL 60-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,990
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Product details
Overview
SQS850EN-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel 60 V MOSFET in PowerPAK® 1212-8 package, delivering RDS(on) = 0.0215 Ω at VGS = 10 V and 12 A continuous drain current at TC = 125 °C. It serves as a high-efficiency power switch in 12 V/24 V automotive body control modules, motor drivers, and LED lighting systems requiring AEC-Q101 qualification and 175 °C junction operation.
For engineers reviewing the SQS850EN-T1_BE3 datasheet, SQS850EN-T1_BE3 pinout, SQS850EN-T1_BE3 application, or SQS850EN-T1_BE3 equivalent, key selection criteria include its trench-based low RDS(on), 100 % UIS testing, leadless thermal performance (RthJC = 4.5 °C/W), and validated operation up to +175 °C junction temperature in under-hood environments.
Technical Context
This device uses Vishay's TrenchFET® process to achieve optimized on-resistance and gate charge trade-offs for fast-switching DC-DC converters and load switches. Its 8-pin PowerPAK 1212-8 package exposes the drain pad on the bottom for direct PCB thermal conduction, enabling low RthJA = 81 °C/W on 1" FR4 board.
The MOSFET features fully characterized dynamic parameters including Qg = 27.4 nC (typ), Ciss = 1617 pF (typ), and td(on)/tf < 14 ns, supporting high-frequency PWM control while maintaining robust avalanche capability (EAS = 26 mJ).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 42 V automotive systems and transient clamping up to ISO 7637-2 Pulse 5a. |
| RDS(on) @ VGS = 10 V | 0.0215 Ω - Enables ≤ 1.5 W conduction loss at 8.7 A, critical for thermally constrained ECUs. |
| RDS(on) @ VGS = 4.5 V | 0.0261 Ω - Ensures reliable turn-on with standard 5 V logic or automotive microcontroller GPIOs. |
| ID Continuous @ TC = 125 °C | 12 A - Sustains full rated current in hot under-hood locations without derating. |
| Junction Temp Range | –55 °C to +175 °C - Meets AEC-Q101 requirements for engine bay and transmission control units. |
| Qg Total Gate Charge | 27.4 nC (typ) - Supports efficient gate driving with low-power controllers and minimizes switching losses at ≥ 100 kHz. |
| RthJC | 4.5 °C/W - Enables direct heat transfer from die to PCB copper, reducing thermal margin risk vs. SO-8 or TSSOP-8. |
Pinout & Package
PowerPAK® 1212-8 is a surface-mount, leadless, 8-terminal package with exposed drain pad on the bottom side. Dimensions: 3.3 mm × 3.3 mm × 1.05 mm (L × W × H). The top-side terminals are arranged in two rows of four pins; drain terminals occupy positions 5–8 and 1–3, source occupies 1–3 and 8, gate is at position 4.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 6, 7, 8 | Drain (D) | Multiple parallel drain terminals reduce current density and package inductance; connects directly to exposed bottom drain pad for thermal and electrical path. |
| 1, 2, 3, 8 | Source (S) | Source terminals tied internally to common source node; used for Kelvin sensing or low-inductance return routing. |
| 4 | Gate (G) | Single gate input with Rg = 1.25 Ω (typ); designed for stable switching with minimal external gate resistance. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications per stress test requirements including HTOL, TC, UHAST, and ESD-HBM ≥ 2 kV. |
| 100 % Rg and UIS tested | Each unit undergoes production-level unclamped inductive switching validation to ensure ruggedness in motor drive flyback events. |
| Exposed drain pad | Bottom-side copper pad provides ultra-low RthJC = 4.5 °C/W and supports > 90 % of total power dissipation via PCB copper. |
| TrenchFET® technology | Enables 20 % lower RDS(on) vs. planar MOSFETs at same die size, improving efficiency in space-constrained 12 V systems. |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, suitable for global automotive supply chains. |
Applications
| Body Control Module (BCM) | Automotive HVAC Blower |
|---|---|
Use Scenario: High-side switching of solenoids, relays, and lamps in centralized vehicle body electronics. IC Role / Device Role / Timing Role: N-channel MOSFET used as low-loss, thermally robust power switch controlled by 5 V MCU outputs. Use Value: 0.0261 Ω RDS(on) at 4.5 V enables full 12 A load drive without external level-shifting, reducing BOM count and layout area. | Use Scenario: PWM-controlled DC motor driver for cabin air blower fans in passenger compartment. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration with fast turn-off (tf = 9.3 ns typ) to minimize shoot-through risk. Use Value: 26 mJ single-pulse avalanche energy ensures survival during motor inductive kickback without snubber circuits. |
| LED Headlamp Driver | Start-Stop System Load Switch |
Use Scenario: Constant-current switching regulator output stage for adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: Synchronous rectifier and current-sense switch operating at 200–500 kHz PWM frequency. Use Value: Low Qgd/Qgs ratio (0.94) improves duty-cycle linearity and reduces gate-drive power consumption. | Use Scenario: Main battery disconnect switch activated during engine cranking to protect sensitive infotainment and ADAS modules. IC Role / Device Role / Timing Role: High-reliability, high-current load switch with overtemperature shutdown support via junction monitoring. Use Value: 175 °C max junction rating allows uninterrupted operation during extended cranking events where ambient exceeds 125 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.023 Ω @ 10 V; TO-252 package; RthJC = 3.0 °C/W but larger footprint (6.73 mm × 6.22 mm). | Higher thermal resistance to case but better heatsink mounting; unsuitable for ultra-dense layouts. | Select when mechanical mounting to external heatsink is required and PCB area is not constrained. |
| DMTH6016LPSQ-13 | RDS(on) = 0.016 Ω @ 10 V; PowerDI 5060 package; AEC-Q101 qualified; RthJC = 3.5 °C/W. | Lower RDS(on) but higher gate charge (Qg = 35 nC); less optimized for high-frequency PWM. | Select when lowest conduction loss dominates over switching loss, e.g., static load switching. |
Compared with IRF7470PBF and DMTH6016LPSQ-13, SQS850EN-T1_BE3 offers the best balance of compact 3.3 mm × 3.3 mm footprint, 4.5 °C/W thermal resistance, and 27.4 nC gate charge-making it optimal for space- and thermally constrained automotive DC-DC and motor control designs.
Availability
SQS850EN-T1_BE3 is available at Aetrix Electronics and suitable for automotive body electronics, HVAC motor drives, LED lighting systems, and start-stop load management requiring stable component supply across multi-year vehicle production cycles.
Supply support for SQS850EN-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS850EN-T1_BE3 belongs to Vishay's AEC-Q101-qualified TrenchFET® PowerPAK® portfolio, engineered specifically for high-reliability, high-temperature automotive power switching where miniaturization and thermal efficiency are critical.
FAQ
What is the maximum allowable gate-source voltage for SQS850EN-T1_BE3?
The absolute maximum gate-source voltage for SQS850EN-T1_BE3 is ±20 V. Exceeding this rating-even momentarily-may cause irreversible gate oxide damage. Designers must ensure gate drive circuits include clamping (e.g., Zener diodes) or rail-to-rail limiting, especially in noisy automotive environments where transients can couple into gate traces. The SQS850EN-T1_BE3 gate threshold voltage is specified between 1.5 V and 2.5 V, making it compatible with standard 3.3 V and 5 V logic interfaces.
Is SQS850EN-T1_BE3 suitable for synchronous rectification in automotive DC-DC converters?
Yes, SQS850EN-T1_BE3 is well-suited for synchronous rectification due to its low RDS(on) of 0.0215 Ω at 10 V and fast switching times (td(off) = 25 ns typ, tf = 9.3 ns typ). Its 4.5 °C/W junction-to-case thermal resistance allows efficient heat removal when mounted on thick copper PCBs, and its 175 °C maximum junction temperature supports sustained operation in high-ambient converter designs. The SQS850EN-T1_BE3 also exhibits low reverse recovery charge (Qrr) typical of trench MOSFETs, minimizing body diode conduction loss during dead-time intervals.
Does SQS850EN-T1_BE3 require special PCB layout considerations for thermal performance?
Yes. To achieve the rated RthJA = 81 °C/W, the SQS850EN-T1_BE3 requires a minimum 1" × 1" FR4 PCB with 2 oz. copper on both sides. The exposed drain pad must be connected to a large copper pour-ideally ≥ 0.3 in²-using multiple thermal vias (≥ 8× 0.3 mm diameter) to inner ground/power planes. Avoid narrow traces connecting the drain pad; instead use solid copper polygons. The SQS850EN-T1_BE3 datasheet recommends the land pattern from Application Note 72597, which specifies 0.094" × 0.152" solder mask openings for optimal wetting and thermal transfer.
How is the avalanche rating of SQS850EN-T1_BE3 validated, and what does it mean for circuit design?
The SQS850EN-T1_BE3 is 100 % unclamped inductive switching (UIS) tested per JESD22-A116, with a guaranteed single-pulse avalanche energy (EAS) of 26 mJ at TJ = 25 °C. This means the device can safely absorb inductive energy from loads like motors or solenoids without external snubbers-provided peak current (IAS = 23 A) and voltage (VDS ≤ 60 V) remain within limits. Designers must verify worst-case L·I²/2 energy in their application does not exceed 26 mJ; the SQS850EN-T1_BE3's consistent UIS performance eliminates need for iterative reliability testing in production.
Can SQS850EN-T1_BE3 be used in a high-side switch configuration with 12 V automotive supply?
While SQS850EN-T1_BE3 is an N-channel MOSFET and thus not ideal for direct high-side switching, it can be deployed in high-side configurations using a charge pump or bootstrap gate driver (e.g., LM5113 or TPS4812). Its 20 V maximum VGS rating and 2.5 V max VGS(th) allow clean turn-on when driven to ≥ 10 V above source potential. However, for dedicated high-side applications, a P-channel alternative like SQM40014EL may offer simpler biasing. The SQS850EN-T1_BE3 remains preferred where high efficiency and low RDS(on) outweigh driver complexity.
SQS850EN-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 21.5mOhm @ 6.1A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2021 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 33W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SQS850EN-T1_BE3 FAQ
1.How can I place an order for SQS850EN-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS850EN-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS850EN-T1_BE3 reliable?
The price and inventory of SQS850EN-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS850EN-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQS850EN-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS850EN-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS850EN-T1_BE3?
SQS850EN-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS850EN-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS850EN-T1_BE3?
For technical support, including SQS850EN-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS850EN-T1_BE3 requirements.
6.How does Aetrix verify that SQS850EN-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQS850EN-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS850EN-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQS850EN-T1_BE3?
All SQS850EN-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS850EN-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS850EN-T1_BE3 part is unused and in its original packaging.
Return procedure for SQS850EN-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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