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Vishay Siliconix SQS850EN-T1_GE3
- Part No.:
- SQS850EN-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SQS850EN-T1_GE3.pdf
- Description:
- MOSFET N-CH 60V 12A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,806
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Product details
Overview
SQS850EN-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 60 V MOSFET in PowerPAK® 1212-8 package, delivering RDS(on) = 0.0215 Ω at VGS = 10 V and 12 A continuous drain current at TC = 125 °C. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for engine control, transmission, and body electronics.
For engineers reviewing the SQS850EN-T1_GE3 datasheet, SQS850EN-T1_GE3 pinout, SQS850EN-T1_GE3 application, or SQS850EN-T1_GE3 equivalent, key selection criteria include its trench-based low-RDS(on) performance, 100 % Rg and UIS tested reliability, and thermal resistance of RthJC = 4.5 °C/W for high-power density automotive switching designs.
Technical Context
This device uses Vishay's TrenchFET® process to achieve low on-resistance with fast switching dynamics: total gate charge Qg = 27.4 nC (typ), turn-on delay td(on) = 9 ns, and rise time tr = 9.6 ns under standard 30 V/1 A test conditions. Its gate threshold voltage VGS(th) is tightly specified at 1.5–2.5 V, enabling robust drive compatibility with 3.3 V and 5 V logic controllers.
The PowerPAK 1212-8 package features exposed drain pads on the bottom side for ultra-low thermal impedance-RthJC = 4.5 °C/W-and supports high-current operation without derating when mounted on FR4 PCBs with adequate copper area. Integrated source-drain diode has VSD = 0.78 V (typ) at IF = 4 A, supporting synchronous rectification and freewheeling in DC-DC converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 48 V automotive systems with transient margin |
| RDS(on) @ VGS = 10 V | 0.0215 Ω - Enables <1.3 W conduction loss at 8 A, critical for thermally constrained ECUs |
| RDS(on) @ VGS = 4.5 V | 0.0261 Ω - Ensures stable on-state performance with standard 5 V microcontroller gate drive |
| ID Continuous @ TC = 125 °C | 12 A - Sustains full rated current in under-hood environments without forced cooling |
| Junction Temp Range | −55 °C to +175 °C - Meets AEC-Q101 requirements for powertrain and chassis applications |
| Qg Total Gate Charge | 27.4 nC (typ) - Balances switching speed and gate driver power consumption in 100–500 kHz converters |
| RthJC | 4.5 °C/W - Allows direct heat transfer from die to PCB copper, reducing thermal design overhead |
Pinout & Package
PowerPAK® 1212-8 is a leadless surface-mount package with 8 terminals: four drain (D), one gate (G), and three source (S) connections. Its 3.3 mm × 3.3 mm footprint and 1.05 mm height enable high-density layout in space-constrained automotive modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals tied to internal die backside - provide low-inductance, high-current path to PCB ground plane |
| 5, 6, 7 | Source (S) | Three source terminals connected to source metallization - reduce source inductance and improve current sharing in high-di/dt switching |
| 8 | Gate (G) | Single gate input with Rg = 1.25 Ω (typ) - enables stable, oscillation-free turn-on/turn-off with minimal external gate resistor |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and safety-critical systems per stress test requirements |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching ruggedness |
| TrenchFET® technology | Delivers 20 % lower RDS(on) vs. planar MOSFETs at same die size, improving power efficiency |
| Exposed drain pad | Enables direct thermal coupling to PCB copper - reduces RthJA to 81 °C/W on 1"² FR4 |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile |
Applications
| Engine Control Unit (ECU) | Automotive DC-DC Converter |
|---|---|
Use Scenario: High-side load switch for fuel injector or ignition coil driver in gasoline/diesel engines. IC Role / Device Role / Timing Role: N-channel MOSFET operating in saturated switch mode with 10–20 kHz PWM control. Use Value: Low RDS(on) minimizes power loss during extended duty cycles; 175 °C rating ensures reliability at under-hood temperatures. | Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V buck converter for infotainment and ADAS modules. IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (tf = 9.3 ns) to minimize dead-time losses. Use Value: Low Qgd/Qg ratio improves efficiency at 300 kHz switching; integrated body diode enables soft recovery. |
| Transmission Control Module (TCM) | Electric Power Steering (EPS) |
Use Scenario: H-bridge motor driver stage for solenoid actuation and valve control in automatic transmissions. IC Role / Device Role / Timing Role: Half-bridge N-MOSFET with bidirectional current capability via source-drain diode. Use Value: 48 A pulsed drain current (IDM) supports peak torque demands; UIS-tested ruggedness prevents failure during inductive kickback. | Use Scenario: High-current motor phase switch in 12 V EPS assist system with regenerative braking. IC Role / Device Role / Timing Role: N-channel power switch handling >10 A continuous current with reverse recovery during commutation. Use Value: VSD = 0.78 V (typ) limits freewheeling loss; 23 A single-pulse avalanche current (IAS) absorbs energy during fault events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.022 Ω @ 10 V but only rated to 150 °C; no AEC-Q101 qualification | Not suitable for under-hood powertrain use; limited to cabin or non-safety systems | Select only for cost-sensitive industrial or consumer applications where automotive qualification is not required |
| STL220N6F7 | 60 V, RDS(on) = 0.020 Ω @ 10 V, AEC-Q101 qualified, but in SO-8 package with RthJC = 1.8 °C/W | Larger footprint (5 mm × 6 mm) and higher thermal resistance limit board-level power density | Prefer when legacy SO-8 layout reuse is needed, but expect 2× larger PCB area and reduced thermal headroom |
Compared with IRF7470PBF and STL220N6F7, SQS850EN-T1_GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, and PowerPAK 1212-8's 3.3 mm × 3.3 mm footprint with 4.5 °C/W RthJC, making it optimal for next-generation compact, high-temperature automotive power stages.
Availability
SQS850EN-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and transmission control modules requiring stable component supply across long production lifecycles.
Supply support for SQS850EN-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS850EN-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® series, engineered specifically for high-efficiency, high-temperature switching in engine, chassis, and body control applications.
FAQ
What is the maximum continuous drain current for SQS850EN-T1_GE3 at 150 °C case temperature?
The SQS850EN-T1_GE3 datasheet specifies 12 A continuous drain current at TC = 125 °C. At 150 °C, derating applies: based on the Safe Operating Area curve and thermal resistance RthJC = 4.5 °C/W, the practical continuous current is approximately 8.5 A to maintain TJ ≤ 175 °C with adequate margin. Always verify using actual board thermal conditions.
Is SQS850EN-T1_GE3 compatible with lead-free reflow soldering profiles?
Yes, SQS850EN-T1_GE3 is qualified for lead-free reflow per JEDEC J-STD-020. The peak temperature is rated to 260 °C, and Vishay's recommended profile specifies 240 °C ± 5 °C for 20–40 seconds. Full details are in document 73257 on vishay.com/doc?73257.
Does SQS850EN-T1_GE3 have integrated ESD protection on the gate?
No, SQS850EN-T1_GE3 does not include on-chip ESD protection diodes. Its gate oxide is rated for ±20 V VGS, and gate-source leakage is specified at ±100 nA. External gate protection (e.g., Zener clamp or RC snubber) is recommended in noisy automotive environments per AEC-Q100 guidelines.
Can SQS850EN-T1_GE3 be used in parallel configurations?
Yes, SQS850EN-T1_GE3 supports paralleling due to its positive temperature coefficient of RDS(on). As junction temperature rises, on-resistance increases, promoting current sharing. For stable operation, match gate drive loop inductance and use individual gate resistors (≥1 Ω) to suppress oscillation between paralleled devices.
What is the typical reverse recovery charge Qrr of the body diode in SQS850EN-T1_GE3?
The SQS850EN-T1_GE3 datasheet does not specify Qrr or reverse recovery time trr. However, typical VSD = 0.78 V at IF = 4 A and soft recovery behavior are confirmed in the "Source-Drain Diode" section. For synchronous rectifier designs requiring precise Qrr, consult Vishay's application note AN822 or contact [email protected] for characterization data.
SQS850EN-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 21.5mOhm @ 6.1A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2021 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 33W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SQS850EN-T1_GE3 FAQ
1.How can I place an order for SQS850EN-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS850EN-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS850EN-T1_GE3 reliable?
The price and inventory of SQS850EN-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS850EN-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS850EN-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS850EN-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS850EN-T1_GE3?
SQS850EN-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS850EN-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS850EN-T1_GE3?
For technical support, including SQS850EN-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS850EN-T1_GE3 requirements.
6.How does Aetrix verify that SQS850EN-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS850EN-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS850EN-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS850EN-T1_GE3?
All SQS850EN-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS850EN-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS850EN-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS850EN-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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