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Vishay Siliconix SQS966ENW-T1_GE3
- Part No.:
- SQS966ENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FET, MOSFET Arrays
- Package:
- PowerPAK® 1212-8W Dual
- Datasheet:
-
SQS966ENW-T1_GE3.pdf
- Description:
- MOSFET 2N-CH 60V 6A PWRPAK1212
- Quantity:
- Payment:
- Shipping:
Inventory:8,257
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Product details
Overview
SQS966ENW-T1_GE3 from Vishay Siliconix is an automotive-grade dual N-channel 60 V MOSFET in PowerPAK 1212-8W package, with RDS(on) = 0.036 Ω at VGS = 10 V, 175 °C junction rating, AEC-Q101 qualified, and 100 % Rg and UIS tested - used in high-reliability DC-DC converters and motor control modules for engine management systems.
For engineers reviewing the SQS966ENW-T1_GE3 datasheet, SQS966ENW-T1_GE3 pinout, SQS966ENW-T1_GE3 application, or SQS966ENW-T1_GE3 equivalent, key selection criteria include its dual-channel layout, low thermal resistance (RthJC = 5.4 °C/W), 175 °C continuous operation, trench-based RDS(on) stability over temperature, and leadless PowerPAK 1212-8W mounting compatibility with high-density PCBs.
Technical Context
This dual N-channel MOSFET integrates two independent 60 V, 6 A rated channels in a single PowerPAK 1212-8W package, sharing no internal connection between channels - each channel features separate gate, source, and drain terminals with matched RDS(on) and dynamic parameters. Its trench architecture enables stable threshold voltage (VGS(th) = 1.5–2.5 V) and low gate charge (Qg = 6.2–8.8 nC) across -55 to +175 °C.
The device supports synchronous rectification and half-bridge topologies via independent gate control, with body diode recovery (trr = 22.7–44 ns, Qrr = 20–26 nC) optimized for fast-switching 12 V/48 V automotive power stages. Thermal design leverages exposed copper drain pads on both sides of the package, enabling direct board-level heat sinking without thermal vias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V automotive systems and transient clamping up to ISO 7637-2 Pulse 5a. |
| RDS(on) @ VGS = 10 V | 0.036 Ω - Enables ≤ 0.5 W conduction loss at 3.7 A per channel in continuous operation at 125 °C junction. |
| ID Continuous | 6 A per channel - Sustained current capability at TC = 25 °C with derating to 6 A at TC = 125 °C due to package thermal limits. |
| Junction Temp Range | -55 to +175 °C - Full specification compliance across automotive under-hood environments without derating. |
| Qg | 6.2–8.8 nC - Low total gate charge reduces driver power demand and switching losses in 100–500 kHz PWM applications. |
| RthJC | 5.4 °C/W - Junction-to-case thermal resistance enables efficient heat transfer to PCB copper when mounted on ≥ 0.3 in² drain pad area. |
| AEC-Q101 Qualified | Yes - Validated for automotive electronics per stress test requirements including HTGB, HTRB, uHAST, and temperature cycling. |
Pinout & Package
Package: PowerPAK® 1212-8W - leadless, surface-mount dual-channel package with exposed copper drain pads on bottom side; 3.3 mm × 3.3 mm footprint, 1.05 mm height; requires reflow soldering per J-STD-020 profile (peak 240 °C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; electrically isolated from S2 and all drains; connects to PCB ground plane or local source trace. |
| 2 (G1) | Gate of Channel 1 | Control input for first MOSFET; requires <10 Ω series gate resistor to suppress ringing during 10 ns rise/fall transitions. |
| 3 (S2) | Source of Channel 2 | Independent source node for second MOSFET; allows floating or referenced configuration; not internally tied to S1. |
| 4 (G2) | Gate of Channel 2 | Separate control terminal enabling asynchronous or complementary drive; no internal coupling to G1. |
| 5–8 (D1/D2) | Drain terminals (D1 = pins 7–8, D2 = pins 5–6) | Exposed copper drain pads on bottom side; pins 5–8 are electrically common per channel (D1: pins 7+8; D2: pins 5+6); primary heat transfer path to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 0.036 Ω RDS(on) at 10 V in 3.3 mm × 3.3 mm footprint - 40 % smaller than TSSOP-8 while maintaining SO-8 thermal performance. |
| AEC-Q101 qualification | Validated for automotive use including HTGB at 150 °C/1000 h and temperature cycling (-55 °C to +175 °C, 1000 cycles) - suitable for engine control units and ADAS power supplies. |
| 100 % Rg and UIS testing | Each unit screened for gate resistance consistency (0.5–1.5 Ω) and unclamped inductive switching robustness (EAS = 7.2 mJ) - ensures reliability in flyback and boost converter hard-switching. |
| PowerPAK 1212-8W thermal design | 5.4 °C/W RthJC and exposed drain pads allow >2× current density vs. TSOP-6 - enables compact 12 V → 3.3 V buck regulators with <10 K thermal rise at 2 W dissipation. |
| Body diode optimization | trr = 22.7–44 ns and Qrr = 20–26 nC support ZVS/ZCS operation in synchronous rectifiers - reduces reverse recovery loss by >30 % vs. standard TrenchFETs. |
Applications
| Engine Control Unit (ECU) Power Distribution | Automotive HVAC Blower Motor Driver |
|---|---|
Use Scenario: Switching 12 V battery power to solenoid valves, fuel injectors, and ignition coils in ECU submodules. IC Role / Device Role / Timing Role: Dual-channel high-side/low-side switch providing independent load control with fast turn-on (td(on) = 7.9 ns) and low RDS(on) to minimize I²R loss. Use Value: 175 °C rating enables placement near engine compartment electronics without thermal throttling; AEC-Q101 ensures functional safety compliance. |
Use Scenario: Driving brushed DC blower motors in climate control systems with PWM speed regulation. IC Role / Device Role / Timing Role: Half-bridge output stage where SQS966ENW-T1_GE3 channels serve as high-side and low-side switches with matched timing (tr/tf = 1.7–7.2 ns). Use Value: Low Qg and fast switching reduce PWM losses at 20–50 kHz; body diode recovery minimizes shoot-through risk during dead-time transitions. |
| 48 V Mild Hybrid DC-DC Converter | ADAS Camera Module Power Supply |
Use Scenario: Primary-side synchronous rectifier in 48 V → 12 V bidirectional buck-boost converters for 48 V mild hybrid architectures. IC Role / Device Role / Timing Role: Dual N-channel configuration enables synchronous rectification on both input and output sides with independent gate control. Use Value: 60 V VDS withstands 48 V transients (ISO 16750-2); RDS(on) stability over temperature maintains efficiency across -40 to +105 °C ambient. |
Use Scenario: Point-of-load (POL) regulator supplying 1.8 V/3.3 V to image sensors and ISP processors in rear-view and surround-view camera modules. IC Role / Device Role / Timing Role: Compact dual MOSFET for high-frequency (≥300 kHz) buck converter output stage, leveraging small footprint and low thermal resistance. Use Value: PowerPAK 1212-8W's 1.05 mm height fits behind tight camera lens mounts; 5.4 °C/W RthJC prevents thermal shutdown during sustained 2 W operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SQJQ960EL_T1_GE3 | 60 V, 10 A per channel, PowerPAK 5x6; RDS(on) = 0.018 Ω @ 10 V; higher current rating but larger 5 mm × 6 mm footprint. | Better suited for 48 V bus distribution where >6 A per channel is required; less space-constrained layouts. | Select when higher current headroom and lower RDS(on) outweigh PCB area constraints. |
| SI7401DN-T1-GE3 | 60 V, 6.5 A per channel, PowerPAK 1212-8; RDS(on) = 0.042 Ω @ 10 V; same package but non-AEC-Q101 rated and 150 °C max TJ. | Acceptable for industrial or consumer applications lacking automotive qualification requirements. | Choose for cost-sensitive non-automotive designs where AEC-Q101 and 175 °C operation are not mandatory. |
Compared with SQS966ENW-T1_GE3, SQJQ960EL_T1_GE3 offers lower conduction loss at higher current but increases board area by 2.7×, while SI7401DN-T1-GE3 matches footprint and basic specs but lacks automotive qualification and high-temperature capability - making SQS966ENW-T1_GE3 the only option meeting full AEC-Q101 and 175 °C requirements in this package size.
Availability
SQS966ENW-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control units, HVAC motor drivers, 48 V mild hybrid converters, and ADAS camera power supplies requiring stable component supply across extended temperature and long lifecycle programs.
Supply support for SQS966ENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for automotive, industrial, and computing markets.
The SQS966ENW-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, designed specifically for under-hood and safety-critical applications demanding AEC-Q101 qualification, 175 °C operation, and robust transient immunity.
FAQ
What is the maximum continuous drain current per channel for SQS966ENW-T1_GE3 at 125 °C case temperature?
The SQS966ENW-T1_GE3 supports 6 A continuous drain current per channel at TC = 125 °C, matching its rating at 25 °C due to package thermal design - this reflects derating based on RthJC = 5.4 °C/W and maximum PD = 9.25 W at that temperature. The device maintains full 6 A capability up to 125 °C case without further linear derating.
Is SQS966ENW-T1_GE3 pin-compatible with other PowerPAK 1212-8W dual MOSFETs like SI7401DN-T1-GE3?
Yes, SQS966ENW-T1_GE3 shares identical PowerPAK 1212-8W pinout and land pattern with SI7401DN-T1-GE3 - both use pins 1/S1, 2/G1, 3/S2, 4/G2, and dual drain pads (D1 on pins 7–8, D2 on pins 5–6). This allows direct PCB layout reuse, though SQS966ENW-T1_GE3 adds AEC-Q101 qualification and 175 °C rating not present in SI7401DN-T1-GE3.
Does SQS966ENW-T1_GE3 require special PCB layout considerations for thermal performance?
Yes - optimal thermal performance for SQS966ENW-T1_GE3 requires ≥ 0.3 in² copper area connected to each drain pad (pins 5–6 and 7–8), with solid inner-layer planes preferred. Extending copper beyond 0.5 in² yields diminishing returns; thermal resistance drops from 94 °C/W (junction-to-ambient) to ~50 °C/W with proper spreading copper, critical for sustaining 2 W/channel dissipation.
What is the gate threshold voltage range for SQS966ENW-T1_GE3, and how does it affect 3.3 V logic drive?
The SQS966ENW-T1_GE3 has a gate threshold voltage VGS(th) of 1.5–2.5 V, enabling turn-on with 3.3 V logic, but RDS(on) at 3.3 V is not characterized - minimum guaranteed VGS for full spec compliance is 4.5 V (RDS(on) = 0.048 Ω). For reliable 3.3 V drive, external level-shifting or gate boosting is recommended to ensure VGS ≥ 4.5 V during switching.
Can SQS966ENW-T1_GE3 be used in synchronous rectifier configurations, and what body diode parameters support this?
Yes, SQS966ENW-T1_GE3 is suitable for synchronous rectification due to its characterized body diode: forward voltage VSD = 0.82–1.1 V at 6 A, reverse recovery time trr = 22.7–44 ns, and Qrr = 20–26 nC. These values enable efficient replacement of Schottky diodes in 100–300 kHz DC-DC converters, reducing conduction loss while maintaining controllable recovery behavior.
SQS966ENW-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8W Dual
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Tc)
- Rds On (Max) @ Id, Vgs:
- 36mOhm @ 1.25A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 572pF @ 25V
- Power - Max:
- 27.8W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerPAK® 1212-8W Dual
SQS966ENW-T1_GE3 FAQ
1.How can I place an order for SQS966ENW-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS966ENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS966ENW-T1_GE3 reliable?
The price and inventory of SQS966ENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS966ENW-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS966ENW-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS966ENW-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS966ENW-T1_GE3?
SQS966ENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS966ENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS966ENW-T1_GE3?
For technical support, including SQS966ENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS966ENW-T1_GE3 requirements.
6.How does Aetrix verify that SQS966ENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS966ENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS966ENW-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS966ENW-T1_GE3?
All SQS966ENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS966ENW-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS966ENW-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS966ENW-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQS966ENW-T1_GE3 Tags
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