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Vishay Siliconix SQV120N06-4M7L_GE3
- Part No.:
- SQV120N06-4M7L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
SQV120N06-4M7L_GE3.pdf
- Description:
- MOSFET N-CH 60V 120A TO262-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,504
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Product details
Overview
SQV120N06-4M7L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 120 A continuous drain current at TC = 25 °C, and 4.7 mΩ RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101 for under-hood motor control, DC-DC converters, and high-current load switching.
For engineers reviewing the SQV120N06-4M7L_GE3 datasheet, SQV120N06-4M7L_GE3 pinout, SQV120N06-4M7L_GE3 application, or SQV120N06-4M7L_GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 100 % UIS and Rg testing, TO-262 package thermal performance, and automotive reliability validation.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-power automotive systems. Its gate threshold voltage (1.5–2.5 V) enables robust turn-on with standard 3.3 V or 5 V logic-level drivers, while the 148 nC typical total gate charge supports efficient PWM operation at frequencies up to several hundred kHz.
The device integrates a robust body diode with 0.92 V typical forward voltage at 70 A and is characterized for avalanche energy (320 mJ) and pulsed current (300 A), supporting fault-tolerant designs in motor drives and battery protection circuits where transient overloads occur.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Max | 60 V - Supports 48 V nominal automotive bus systems with margin for load dump transients |
| RDS(on) @ 10 V | 4.7 mΩ - Enables <1 W conduction loss at 100 A, reducing heatsink requirements |
| RDS(on) @ 4.5 V | 6.0 mΩ - Ensures usable on-resistance with 5 V microcontroller gate drive |
| ID Continuous | 120 A @ TC = 25 °C - Delivers high current in compact TO-262 package with low RthJC = 0.6 °C/W |
| Junction Temp | −55 to +175 °C - Qualified for engine compartment and transmission control unit environments |
| Qg Total | 148 nC typ - Determines gate driver power requirement and switching loss in hard-switched topologies |
| EAS | 320 mJ - Specifies single-pulse avalanche capability for inductive load interruption safety |
Pinout & Package
Package: TO-262 (Straight Lead, 3-pin, through-hole). Thermal resistance junction-to-case is 0.6 °C/W, enabling high-power dissipation when mounted to heatsink via drain tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main current path output / heatsink connection | Exposed metal tab electrically connected to drain; must be insulated from chassis unless referenced to system ground |
| G (Gate) | Control input for channel conduction | High-impedance terminal requiring low-inductance gate loop; sensitive to ESD and ringing |
| S (Source) | Reference node for gate drive and current return | Common return path for load current; defines local ground reference for gate control |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, transmission, and ADAS power stages |
| 100 % UIS tested | Each unit verified for unclamped inductive switching robustness-critical for relay replacement and solenoid driving |
| Low RthJC = 0.6 °C/W | Enables >200 W power dissipation with modest heatsinking, improving system power density |
| TrenchFET® architecture | Delivers lower RDS(on) × Qg figure of merit than planar MOSFETs, reducing combined conduction and switching losses |
| 100 % Rg tested | Ensures consistent gate charge profile and predictable switching timing across production lots |
Applications
| Electric Power Steering (EPS) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-current H-bridge motor driver controlling steering assist torque. IC Role / Device Role / Timing Role: Main power switch in dual-phase half-bridge configuration handling bidirectional 100+ A peak currents. Use Value: Low 4.7 mΩ RDS(on) minimizes I²R heating during sustained assist; 175 °C rating ensures reliability near motor housing. | Use Scenario: Primary-side synchronous rectifier in bi-directional buck-boost converter linking 12 V and 48 V domains. IC Role / Device Role / Timing Role: High-side and low-side switching element operating at 100–200 kHz with 5 V gate drive. Use Value: 6.0 mΩ RDS(on) at 4.5 V enables efficient operation without level-shifting gate drivers, reducing BOM count. |
| Automotive HVAC Blower Control | On-Board Charger (OBC) Input Stage |
Use Scenario: PWM-controlled high-power fan driver in climate control module. IC Role / Device Role / Timing Role: Single-ended switch modulating 80–120 A motor current with variable duty cycle. Use Value: 320 mJ avalanche energy rating protects against back-EMF spikes during abrupt shutdown, eliminating need for external snubbers. | Use Scenario: AC/DC front-end switch in 6.6 kW OBC handling rectified line voltage and PFC output. IC Role / Device Role / Timing Role: Fast-switching, high-current switch in totem-pole PFC or isolated DC-DC primary side. Use Value: 148 nC Qg and 0.6 °C/W RthJC support thermally constrained, high-frequency operation with minimal gate drive loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6LF6AG | 60 V, 220 A, 2.2 mΩ @ 10 V, PowerFLAT 8x8 package, no AEC-Q101 listed | Higher current rating but surface-mount only; lacks automotive qualification documentation | Prefer for space-constrained non-automotive industrial inverters where AEC-Q101 is not required |
| IRFB4115PBF | 55 V, 110 A, 5.8 mΩ @ 10 V, TO-220 package, AEC-Q101 qualified | Lower voltage rating and higher RDS(on); larger RthJA limits power handling in same footprint | Acceptable for 42 V systems with derated current; requires thermal redesign if replacing SQV120N06-4M7L_GE3 directly |
Compared with STL220N6LF6AG and IRFB4115PBF, the SQV120N06-4M7L_GE3 uniquely balances AEC-Q101 compliance, 60 V rating, 4.7 mΩ on-resistance, and TO-262 thermal performance-making it optimal for high-reliability 48 V automotive power stages where through-hole mounting and proven transient robustness are mandatory.
Availability
SQV120N06-4M7L_GE3 is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid converters, and automotive HVAC blower control requiring stable component supply across extended vehicle lifecycles.
Supply support for SQV120N06-4M7L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and performance in harsh environments.
The SQV120N06-4M7L_GE3 belongs to Vishay's automotive-qualified TrenchFET® power MOSFET product line, engineered specifically for high-current, high-temperature switching in engine bay and chassis-mounted electronic control units.
FAQ
What is the maximum continuous drain current rating for SQV120N06-4M7L_GE3 at 125 °C case temperature?
The SQV120N06-4M7L_GE3 supports 91 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-262 package and ensures safe operation within its 175 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain TC ≤ 125 °C under full-load conditions.
Is SQV120N06-4M7L_GE3 suitable for 4.5 V gate drive applications?
Yes, the SQV120N06-4M7L_GE3 is fully compatible with 4.5 V gate drive, delivering 6.0 mΩ RDS(on) at ID = 20 A and VGS = 4.5 V. Its gate threshold voltage range (1.5–2.5 V) provides strong turn-on margin with standard 5 V logic or automotive microcontrollers, making it appropriate for direct-drive configurations without gate boosting.
Does SQV120N06-4M7L_GE3 include integrated ESD protection on the gate?
No, the SQV120N06-4M7L_GE3 does not incorporate integrated gate ESD protection. The datasheet specifies ±100 nA gate leakage at ±20 V, indicating a standard MOSFET gate structure. External gate resistors and TVS diodes are recommended in production designs to prevent ESD damage during handling and PCB assembly.
What is the avalanche energy rating of SQV120N06-4M7L_GE3, and how is it tested?
The SQV120N06-4M7L_GE3 is rated for 320 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH. This value is measured per JEDEC JESD24-11 using unclamped inductive switching (UIS) test conditions and confirmed by 100 % production testing. It enables reliable operation in inductive load switching applications such as motor commutation and solenoid control.
How does the thermal resistance of SQV120N06-4M7L_GE3 compare between junction-to-case and junction-to-ambient?
The SQV120N06-4M7L_GE3 has RthJC = 0.6 °C/W (junction-to-case) and RthJA = 40 °C/W (junction-to-ambient, PCB mount). This 66× difference confirms that effective heatsinking of the drain tab is essential-ambient cooling alone cannot sustain high-power operation. Mounting to a large copper area or external heatsink reduces thermal bottleneck and enables full 120 A current capability.
SQV120N06-4M7L_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 230 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262-3
SQV120N06-4M7L_GE3 FAQ
1.How can I place an order for SQV120N06-4M7L_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQV120N06-4M7L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQV120N06-4M7L_GE3 reliable?
The price and inventory of SQV120N06-4M7L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQV120N06-4M7L_GE3 is usually 5 days.
3.What payment methods are accepted for SQV120N06-4M7L_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQV120N06-4M7L_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQV120N06-4M7L_GE3?
SQV120N06-4M7L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQV120N06-4M7L_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQV120N06-4M7L_GE3?
For technical support, including SQV120N06-4M7L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQV120N06-4M7L_GE3 requirements.
6.How does Aetrix verify that SQV120N06-4M7L_GE3 is sourced from the original manufacturer or authorized distributors?
All SQV120N06-4M7L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQV120N06-4M7L_GE3 meets industry standards.
7.What is the process for return or replacement of SQV120N06-4M7L_GE3?
All SQV120N06-4M7L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQV120N06-4M7L_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQV120N06-4M7L_GE3 part is unused and in its original packaging.
Return procedure for SQV120N06-4M7L_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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