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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQV120N10-3M8_GE3

Name: SQV120N10-3M8_GE3
Brand: Vishay Siliconix
SKU: SQV120N10-3M8_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQV120N10-3M8_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: SQV120N10-3M8_GE3.pdf

Description:: MOSFET N-CH 100V 120A TO262-3

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Product details

Overview

SQV120N10-3M8_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 100 V V_DS, 120 A continuous drain current at T_C = 25 °C, and 3.8 mΩ R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is housed in a TO-262 package, designed for high-current DC/DC converters and motor control in engine management systems.

For engineers reviewing the SQV120N10-3M8_GE3 datasheet, SQV120N10-3M8_GE3 pinout, SQV120N10-3M8_GE3 application, or SQV120N10-3M8_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 0.6 °C/W junction-to-case thermal resistance, 100% R_g and UIS testing, and low gate charge (125–190 nC) enabling efficient high-frequency switching in automotive power stages.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and robust avalanche capability (E_AS = 266 mJ). Its gate threshold voltage (2.5–3.5 V) supports standard 10 V gate drive, while dynamic parameters-including C_iss = 5780–7230 pF and Q_gd = 46 nC-enable predictable turn-on/turn-off timing in hard-switched topologies.

The device features integrated body diode with V_SD = 0.9–1.5 V at I_F = 100 A and is rated for pulsed drain current up to 480 A. Thermal design is supported by validated R_thJC = 0.6 °C/W and R_thJA = 40 °C/W (PCB mount), confirming suitability for thermally constrained under-hood environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands full automotive load-dump transients without breakdown
R_DS(on) @ V_GS = 10 V	3.8 mΩ - Enables <1.5 W conduction loss at 60 A, reducing heatsink requirements
I_D (continuous, T_C = 25 °C)	120 A - Supports high-power traction inverters and starter-generator modules
E_AS	266 mJ - Absorbs inductive energy during switching transitions without failure
Q_g	125–190 nC - Determines gate driver power requirement and switching speed trade-off
T_J max	+175 °C - Certified for operation in engine bay and transmission control units
R_thJC	0.6 °C/W - Enables direct heatsink mounting for optimal thermal path in high-power modules

Pinout & Package

TO-262 package: 3-lead, straight leadframe, isolated drain tab. Mounting surface is electrically connected to drain (D). Package outline per Vishay Doc. 71769, with dimensions D = 8.64–9.65 mm, E = 10.03–10.41 mm, L = 13.08–14.22 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±20 V drive; 1.6–5 Ω gate resistance affects switching speed and ringing
2 (D)	Drain	Main power output; electrically tied to metal tab; must be thermally and electrically connected to heatsink
3 (S)	Source	Power return and reference node; used for current sensing and gate drive referencing in high-side configurations

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use including temperature cycling, HTRB, and UHAST per JESD22-A108
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness
Low R_thJC = 0.6 °C/W	Enables >200 W dissipation with <120 °C ΔT to heatsink, critical for compact power modules
TrenchFET® structure	Delivers lower R_DS(on) × area vs. planar MOSFETs, improving power density in space-constrained ECUs
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive DC/DC Converter Primary Switch
Use Scenario: High-speed switching of 12 V fuel injectors in gasoline direct injection systems with peak currents up to 100 A. IC Role / Device Role / Timing Role: Power switch controlling injector coil energization; requires fast turn-off (<60 ns t_d(off)) to limit dwell time accuracy. Use Value: Low R_DS(on) minimizes resistive heating during extended duty cycles; 175 °C rating ensures reliability near hot engine components.	Use Scenario: Primary-side synchronous rectifier in 48 V–12 V bidirectional DC/DC converters for mild hybrid vehicles. IC Role / Device Role / Timing Role: High-current, high-frequency (100–300 kHz) main switching element; gate charge profile enables efficient zero-voltage switching (ZVS) assist. Use Value: 125–190 nC Q_g balances driver loss and switching loss; low C_oss (3070–3840 pF) reduces capacitive turn-on loss.
Electric Power Steering (EPS) Motor Phase Leg	On-Board Charger (OBC) Input Stage Switch
Use Scenario: Half-bridge phase leg in 3-phase EPS motor drivers handling 80–100 A RMS current with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: Low-side switching element; body diode recovery (V_SD = 0.9–1.5 V) supports freewheeling during dead-time. Use Value: Robust UIS rating (IAS = 73 A, EAS = 266 mJ) withstands motor inductive kickback during fault conditions.	Use Scenario: AC–DC front-end switch in 6.6 kW OBCs operating in continuous conduction mode (CCM) PFC stage. IC Role / Device Role / Timing Role: Fast-switching, high-current switch with precise gate threshold (2.5–3.5 V) for accurate PWM control across wide temperature range. Use Value: Stable V_GS(th) drift (<±0.6 V from −55 to +175 °C) ensures consistent turn-on behavior in varying ambient conditions.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive DC/DC Converter Primary Switch

Use Scenario: High-speed switching of 12 V fuel injectors in gasoline direct injection systems with peak currents up to 100 A.

IC Role / Device Role / Timing Role: Power switch controlling injector coil energization; requires fast turn-off (<60 ns t_d(off)) to limit dwell time accuracy.

Use Value: Low R_DS(on) minimizes resistive heating during extended duty cycles; 175 °C rating ensures reliability near hot engine components.

Use Scenario: Primary-side synchronous rectifier in 48 V–12 V bidirectional DC/DC converters for mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-current, high-frequency (100–300 kHz) main switching element; gate charge profile enables efficient zero-voltage switching (ZVS) assist.

Use Value: 125–190 nC Q_g balances driver loss and switching loss; low C_oss (3070–3840 pF) reduces capacitive turn-on loss.

Electric Power Steering (EPS) Motor Phase Leg

On-Board Charger (OBC) Input Stage Switch

Use Scenario: Half-bridge phase leg in 3-phase EPS motor drivers handling 80–100 A RMS current with PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side switching element; body diode recovery (V_SD = 0.9–1.5 V) supports freewheeling during dead-time.

Use Value: Robust UIS rating (IAS = 73 A, EAS = 266 mJ) withstands motor inductive kickback during fault conditions.

Use Scenario: AC–DC front-end switch in 6.6 kW OBCs operating in continuous conduction mode (CCM) PFC stage.

IC Role / Device Role / Timing Role: Fast-switching, high-current switch with precise gate threshold (2.5–3.5 V) for accurate PWM control across wide temperature range.

Use Value: Stable V_GS(th) drift (<±0.6 V from −55 to +175 °C) ensures consistent turn-on behavior in varying ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N10F7AG	100 V, 120 A, R_DS(on) = 3.5 mΩ @ 10 V; TO-263 package; no AEC-Q101 documentation confirmed	Same voltage/current class but lacks documented automotive qualification; higher thermal resistance (R_thJC = 0.75 °C/W)	Prefer SQV120N10-3M8_GE3 for safety-critical under-hood applications requiring AEC-Q101 traceability
IXTH120N10L2	100 V, 120 A, R_DS(on) = 4.0 mΩ @ 10 V; TO-247 package; AEC-Q101 qualified; higher Q_g (220 nC)	Larger footprint; higher gate drive power needed; better suited for forced-air-cooled industrial inverters	Choose SQV120N10-3M8_GE3 when board space and thermal interface to heatsink are constrained

Compared with STL120N10F7AG and IXTH120N10L2, the SQV120N10-3M8_GE3 delivers superior thermal performance (R_thJC = 0.6 °C/W), verified AEC-Q101 compliance, and optimized gate charge for automotive switching efficiency-making it the preferred choice for space- and reliability-constrained vehicle power systems.

Availability

SQV120N10-3M8_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and on-board chargers requiring stable component supply across automotive production lifecycles.

Supply support for SQV120N10-3M8_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The SQV120N10-3M8_GE3 belongs to Vishay's automotive-qualified TrenchFET® power MOSFET product line, engineered specifically for demanding under-hood power switching applications where thermal resilience, avalanche ruggedness, and long-term parametric stability are mandatory.

FAQ

What is the maximum junction temperature rating for SQV120N10-3M8_GE3?

The SQV120N10-3M8_GE3 has a maximum operating junction temperature of +175 °C, validated per AEC-Q101 stress test conditions. This rating allows reliable operation in high-ambient environments such as engine compartments and transmission control modules. The device's R_DS(on) and threshold voltage are characterized across this full range, ensuring predictable performance at elevated temperatures.

Is SQV120N10-3M8_GE3 qualified to AEC-Q101 standards?

Yes, SQV120N10-3M8_GE3 is explicitly AEC-Q101 qualified, as stated in the Vishay datasheet (S13-1433-Rev. A). Qualification includes temperature cycling, high-temperature reverse bias (HTRB), and unclamped inductive switching (UIS) tests. Documentation confirms compliance for automotive powertrain and chassis applications.

What is the gate threshold voltage range for SQV120N10-3M8_GE3?

The gate threshold voltage (V_GS(th)) for SQV120N10-3M8_GE3 is specified as 2.5 V (min), 3.0 V (typ), and 3.5 V (max) at I_D = 250 μA. This tight distribution ensures consistent turn-on behavior across production lots and temperature extremes (−55 to +175 °C), supporting robust gate drive design in automotive microcontrollers.

Does SQV120N10-3M8_GE3 have an integrated body diode, and what is its forward voltage?

Yes, SQV120N10-3M8_GE3 includes an integrated source-drain body diode. Its forward voltage (V_SD) is 0.9 V (typ) to 1.5 V (max) at I_F = 100 A and V_GS = 0 V. This diode supports freewheeling in half-bridge and synchronous rectifier topologies, with characterization provided across temperature ranges for accurate loss modeling.

What is the total gate charge (Q_g) specification for SQV120N10-3M8_GE3?

The total gate charge (Q_g) for SQV120N10-3M8_GE3 is 125 nC (typ) and 190 nC (max) at V_GS = 10 V, V_DS = 50 V, and I_D = 70 A. This value directly determines gate driver sizing and switching loss in high-frequency applications such as DC/DC converters and motor inverters.

SQV120N10-3M8_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 190 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7230 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-262-3

SQV120N10-3M8_GE3 FAQ

1.How can I place an order for SQV120N10-3M8_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQV120N10-3M8_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQV120N10-3M8_GE3 reliable?

The price and inventory of SQV120N10-3M8_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQV120N10-3M8_GE3 is usually 5 days.

3.What payment methods are accepted for SQV120N10-3M8_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQV120N10-3M8_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQV120N10-3M8_GE3?

SQV120N10-3M8_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQV120N10-3M8_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQV120N10-3M8_GE3?

For technical support, including SQV120N10-3M8_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQV120N10-3M8_GE3 requirements.

6.How does Aetrix verify that SQV120N10-3M8_GE3 is sourced from the original manufacturer or authorized distributors?

All SQV120N10-3M8_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQV120N10-3M8_GE3 meets industry standards.

7.What is the process for return or replacement of SQV120N10-3M8_GE3?

All SQV120N10-3M8_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQV120N10-3M8_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQV120N10-3M8_GE3 part is unused and in its original packaging.

Return procedure for SQV120N10-3M8_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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