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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQW33N65EF-GE3

Name: SQW33N65EF-GE3
Brand: Vishay Siliconix
SKU: SQW33N65EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQW33N65EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SQW33N65EF-GE3.pdf

Description:: E SERIES POWER MOSFET WITH FAST

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SQW33N65EF-GE3 from Vishay Siliconix is a 650 V, 34 A N-channel power MOSFET in TO-247AD package, featuring ultra-low gate charge (115 nC typ.), fast body diode (trr = 178 ns typ.), and AEC-Q101 qualification for automotive high-voltage DC/DC converters and onboard chargers.

For engineers reviewing the SQW33N65EF-GE3 datasheet, SQW33N65EF-GE3 pinout, SQW33N65EF-GE3 application, or SQW33N65EF-GE3 equivalent, key selection criteria include RDS(on) = 0.095 Ω at 10 V, UIS-rated avalanche energy (508 mJ), and reduced Qrr (1.4 μC typ.) enabling high-efficiency hard-switched topologies.

Technical Context

This E-series MOSFET employs optimized silicon process and cell layout to minimize reverse recovery charge (Qrr) and body diode turn-off losses while maintaining low RDS(on) × Qg figure-of-merit (0.095 Ω × 115 nC). Its 175 °C maximum junction temperature supports compact thermal design in space-constrained automotive power stages.

The device integrates a fast-recovery intrinsic body diode with dV/dt immunity up to 50 V/ns and IRRM of 17 A, enabling reliable operation in synchronous rectification and bidirectional switching applications without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Supports 400 V nominal DC bus with 30 % overvoltage margin in automotive traction battery interfaces
R_DS(on) typ.	0.095 Ω at V_GS = 10 V - Enables <1.5 W conduction loss at 34 A continuous drain current
Q_g typ.	115 nC - Reduces gate drive power requirement and enables use with lower-current drivers
Q_rr typ.	1.4 μC - Lowers diode recovery loss by >40 % vs. standard 650 V MOSFETs in ZVS/ZCS circuits
t_rr typ.	178 ns - Minimizes voltage overshoot during commutation in high-dI/dt (>100 A/μs) conditions
E_AS	508 mJ - Withstands unclamped inductive switching events without failure under rated conditions
T_J max	+175 °C - Allows full-rated operation in engine bay or power module environments without derating

Pinout & Package

Package: TO-247AD - Industry-standard 3-lead through-hole package with isolated tab (drain-connected), 21.1 mm × 15.9 mm footprint, 20.1 mm height, and 0.4 °C/W typical R_thJC.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (left)	Source (S)	Low-side return path; connects to PCB ground plane or source node; carries full load current
Lead 2 (center)	Drain (D)	High-voltage power input/output node; electrically connected to metal tab; requires isolation from heatsink unless specified
Lead 3 (right)	Gate (G)	Control terminal; high-impedance input requiring <115 nC charge for full enhancement; sensitive to ESD

Key Features

Feature	Design Value
Fast body diode	trr = 178 ns and Qrr = 1.4 μC enable efficient bidirectional switching in LLC resonant and phase-shifted full-bridge topologies
AEC-Q101 qualified	Validated for automotive powertrain applications including OBC and DC/DC with full stress testing per JESD22-A108
Low R_DS(on) × Q_g	10.9 nC·Ω - Optimized trade-off between conduction and switching loss for 100–300 kHz operation
UIS-rated avalanche capability	508 mJ single-pulse energy rating ensures robustness against transient overloads in unregulated systems
175 °C operation	Enables direct mounting on aluminum heatsinks without thermal derating in ambient temperatures up to +105 °C

Applications

Automotive Onboard Charger (OBC)	High-Voltage DC/DC Converter
Use Scenario: Bidirectional AC/DC and DC/DC conversion in 400 V–800 V BEV architectures with SiC/GaN co-design constraints. IC Role / Device Role / Timing Role: Primary-side high-side switch in dual-active-bridge (DAB) topology operating at 100–200 kHz. Use Value: Fast body diode reduces circulating current loss during zero-voltage switching transitions, improving peak efficiency by ≥0.8 % at 5 kW output.	Use Scenario: Isolated 400 V to 12 V/48 V conversion for vehicle control units and ADAS domain controllers. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side full-bridge configuration with forced commutation. Use Value: Low Qrr minimizes reverse recovery-induced shoot-through risk during gate overlap, enabling safe 150 ns dead-time reduction.
Industrial Motor Drive Inverter	Renewable Energy PV String Inverter
Use Scenario: 3-phase inverter stage for 7.5 kW HVAC compressors and traction inverters in off-road EVs. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid half-bridge modules. Use Value: 175 °C T_J rating allows sustained 34 A operation at case temperatures up to 100 °C without current derating.	Use Scenario: High-voltage DC link switching in string-level MPPT converters interfacing 1000 V+ PV arrays. IC Role / Device Role / Timing Role: Clamping switch in active snubber networks protecting main IGBTs during turn-off. Use Value: 508 mJ E_AS withstands repetitive 650 V clamp transients without degradation over 10-year field life.

Automotive Onboard Charger (OBC)

High-Voltage DC/DC Converter

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 400 V–800 V BEV architectures with SiC/GaN co-design constraints.

IC Role / Device Role / Timing Role: Primary-side high-side switch in dual-active-bridge (DAB) topology operating at 100–200 kHz.

Use Value: Fast body diode reduces circulating current loss during zero-voltage switching transitions, improving peak efficiency by ≥0.8 % at 5 kW output.

Use Scenario: Isolated 400 V to 12 V/48 V conversion for vehicle control units and ADAS domain controllers.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side full-bridge configuration with forced commutation.

Use Value: Low Qrr minimizes reverse recovery-induced shoot-through risk during gate overlap, enabling safe 150 ns dead-time reduction.

Industrial Motor Drive Inverter

Renewable Energy PV String Inverter

Use Scenario: 3-phase inverter stage for 7.5 kW HVAC compressors and traction inverters in off-road EVs.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid half-bridge modules.

Use Value: 175 °C T_J rating allows sustained 34 A operation at case temperatures up to 100 °C without current derating.

Use Scenario: High-voltage DC link switching in string-level MPPT converters interfacing 1000 V+ PV arrays.

IC Role / Device Role / Timing Role: Clamping switch in active snubber networks protecting main IGBTs during turn-off.

Use Value: 508 mJ E_AS withstands repetitive 650 V clamp transients without degradation over 10-year field life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW33N65M5	R_DS(on) = 0.095 Ω, Q_g = 105 nC, trr = 210 ns, not AEC-Q101 qualified	Targeted at industrial SMPS; lacks automotive qualification and body diode speed optimization	Select when AEC-Q101 is not required and lower gate charge is prioritized over diode performance
IXTH30N65X2	R_DS(on) = 0.105 Ω, Q_g = 92 nC, trr = 145 ns, 150 °C T_J max, not AEC-Q101 qualified	Optimized for high-frequency PFC; lower thermal limit restricts continuous 34 A operation above 85 °C ambient	Select for 300–500 kHz PFC stages where diode speed outweighs junction temperature margin

Compared with STW33N65M5 and IXTH30N65X2, SQW33N65EF-GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, and sub-200 ns trr-making it the only option qualified for automotive-grade 650 V hard-switched converters requiring long-term reliability at elevated temperature.

Availability

SQW33N65EF-GE3 is available at Aetrix Electronics and suitable for automotive onboard chargers, high-voltage DC/DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SQW33N65EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

SQW33N65EF-GE3 belongs to Vishay's E-series high-voltage power MOSFET family, engineered specifically for fast-body-diode performance and AEC-Q101 compliance in next-generation EV power electronics.

FAQ

What is the maximum continuous drain current rating for SQW33N65EF-GE3 at 100 °C case temperature?

The SQW33N65EF-GE3 supports 24 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking and adherence to the linear derating factor of 2.5 W/°C above 100 °C. At TC = 25 °C, the rating increases to 34 A, and the device maintains full functionality up to TJ = 175 °C.

Is SQW33N65EF-GE3 suitable for synchronous rectification in high-frequency LLC resonant converters?

Yes, SQW33N65EF-GE3 is well-suited for synchronous rectification in LLC converters due to its fast body diode (trr = 178 ns typ., IRRM = 17 A) and low Qrr (1.4 μC typ.). These characteristics reduce reverse recovery losses and enable precise timing control during zero-current switching transitions, especially at 200–300 kHz operating frequencies common in high-density EV power supplies.

Does SQW33N65EF-GE3 have lead (Pb)-free and halogen-free construction?

Yes, SQW33N65EF-GE3 is explicitly marked as lead (Pb)-free and halogen-free per Vishay's ordering information and material categorization documentation. The "-GE3" suffix denotes Vishay's standard green packaging, compliant with RoHS Directive 2011/65/EU and JEDEC JS709B requirements for hazardous substance limitations.

What is the typical gate-to-source threshold voltage (V_GS(th)) range for SQW33N65EF-GE3?

The SQW33N65EF-GE3 has a V_GS(th) range of 2.0 V to 4.0 V at TJ = 25 °C and ID = 250 μA, as confirmed in its Specifications table. This threshold ensures reliable turn-on with standard 10 V gate drivers while providing noise immunity against spurious triggering in noisy automotive environments.

How does the avalanche energy rating of SQW33N65EF-GE3 compare to standard 650 V MOSFETs?

SQW33N65EF-GE3 delivers 508 mJ single-pulse avalanche energy (EAS) under standardized test conditions (VDD = 140 V, L = 28.2 mH, Rg = 25 Ω, IAS = 6.0 A), exceeding typical 650 V MOSFETs by 20–35 %. This higher rating stems from its rugged silicon structure and is validated per JEDEC JESD24-1, making SQW33N65EF-GE3 suitable for unclamped inductive switching in fault-tolerant power designs.

SQW33N65EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 109mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 173 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3972 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AD

SQW33N65EF-GE3 FAQ

1.How can I place an order for SQW33N65EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQW33N65EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQW33N65EF-GE3 reliable?

The price and inventory of SQW33N65EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQW33N65EF-GE3 is usually 5 days.

3.What payment methods are accepted for SQW33N65EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQW33N65EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQW33N65EF-GE3?

SQW33N65EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQW33N65EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQW33N65EF-GE3?

For technical support, including SQW33N65EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQW33N65EF-GE3 requirements.

6.How does Aetrix verify that SQW33N65EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SQW33N65EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQW33N65EF-GE3 meets industry standards.

7.What is the process for return or replacement of SQW33N65EF-GE3?

All SQW33N65EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQW33N65EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQW33N65EF-GE3 part is unused and in its original packaging.

Return procedure for SQW33N65EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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