STMicroelectronics ST25DV16K-IER8T3

Overview

ST25DV16K-IER8T3 from STMicroelectronics is a dynamic NFC/RFID tag IC with dual I²C and ISO/IEC 15693 contactless interfaces, 16 Kbit EEPROM (2048 bytes via I²C / 512 blocks × 4 bytes via RF), 256-byte fast-transfer buffer, 1.8–5.5 V supply, and GPO interrupt output. It enables secure, bidirectional data exchange between wired microcontrollers and NFC readers in smart labels and industrial asset tags.

For engineers reviewing the ST25DV16K-IER8T3 datasheet, ST25DV16K-IER8T3 pinout, ST25DV16K-IER8T3 application, or ST25DV16K-IER8T3 equivalent, key selection criteria include RF/I²C coexistence timing, 64-bit password-protected memory segmentation, energy harvesting analog output (V_EH), and GPO event configuration for field change, write completion, or mailbox activity detection.

Technical Context

The device implements a dual-interface architecture where I²C operates as a standard slave (1 MHz max) while RF complies fully with ISO/IEC 15693 and NFC Forum Type 5, supporting all sub-carrier modes, data rates, and modulations. Its internal 28.5 pF tuning capacitance eliminates external matching components for antenna design.

Fast Transfer Mode uses a dedicated 256-byte volatile buffer to synchronize data between RF and I²C domains without host intervention; GPO supports configurable open-drain output (per ST25DVxx-IE variant) for real-time RF event signaling including field presence, memory write end, and Fast Transfer completion.

Key Specifications

Pinout & Package

ST25DV16K-IER8T3 is packaged in an 8-pin TSSOP (JEDEC MO-153) with ECOPACK2 RoHS compliance. Pin functions are validated per DS10925 Rev 11 Figure 2 and Table 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-interface NFC tag applications.

Compared with ST25DV04K-IER8T3, this part doubles memory and retains full Fast Transfer/GPO/EH functionality; versus NT3H2211, it adds ISO/IEC 15693 compatibility, hardware mailbox, and energy harvesting - enabling true hybrid wired/wireless system architectures.

Availability

ST25DV16K-IER8T3 is available at Aetrix Electronics and suitable for smart industrial labels, NFC-enabled sensor nodes, secure product authentication, and IoT device configuration hubs requiring stable component supply across automotive-grade temperature ranges (–40 to 105 °C).

Supply support for ST25DV16K-IER8T3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, specializing in microcontrollers, power management, sensors, and connectivity solutions for industrial, automotive, and consumer markets.

The ST25DV family targets hybrid wired/wireless systems requiring secure, low-power, dual-interface memory - designed specifically for NFC-integrated edge devices where I²C hosts must coordinate with contactless readers without software overhead.

FAQ

What is the function of the V_EH pin and under what conditions does it deliver voltage?

The V_EH pin provides unregulated analog voltage derived from the RF carrier field when energy harvesting mode is enabled and field strength exceeds the activation threshold. It enters high-impedance (high-Z) state when RF field is absent or insufficient, and delivers no regulated output - external circuitry must tolerate variable voltage and current. This pin is not present in SO8N packages but is confirmed functional in TSSOP8 and UFDFPN8 variants per DS10925 Rev 11 Section 2.5.

How does the Fast Transfer Mode buffer operate between I²C and RF interfaces?

The 256-byte volatile buffer acts as a mailbox: data written via I²C to the buffer's dedicated address range becomes immediately readable via RF extended commands, and vice versa. No host CPU intervention is required - the hardware automatically manages coherency. Buffer contents are lost on power loss, and RF reads/writes to the buffer do not affect main EEPROM until explicitly copied using Fast Transfer commands per Section 4.1 of DS10925.

Can the GPO pin be used to wake up a microcontroller from deep sleep?

Yes - the GPO pin can be configured to assert on RF field detection, memory write completion, or Fast Transfer end. In ST25DV16K-IER8T3 (IE variant), GPO is open-drain and requires an external pull-up resistor (>4.7 kΩ). When tied to a microcontroller's external interrupt pin, a falling edge triggers wake-up. Boot time from LPD-controlled low-power mode is ~100 µs, confirmed in Section 2.2.2 of DS10925 Rev 11.

What memory protection mechanisms are implemented for user data?

User memory is divided into up to four configurable areas, each independently protected by 64-bit passwords for RF read/write and I²C write. Three distinct 64-bit RF passwords and one 64-bit I²C password are stored in system configuration registers. Password verification is performed in hardware before granting access - no software decryption or key management is required. Area boundaries are defined by ENDA registers and enforced at command execution time per Section 4.2.1 of DS10925.