STMicroelectronics ST25DV64K-IER8T3

Overview

ST25DV64K-IER8T3 from STMicroelectronics is a dynamic NFC/RFID tag IC with dual I²C and ISO/IEC 15693 contactless interfaces, 64 kbit EEPROM, 256-byte fast-transfer buffer, and energy harvesting output (V_EH). It operates from 1.8–5.5 V, supports 1 MHz I²C, and delivers up to 53 Kbit/s RF read speed. Used in smart labels, industrial asset tags, and IoT sensor nodes requiring secure, battery-free configuration.

For engineers reviewing the ST25DV64K-IER8T3 datasheet, ST25DV64K-IER8T3 pinout, ST25DV64K-IER8T3 application, or ST25DV64K-IER8T3 equivalent, key selection criteria include RF/I²C coexistence timing, GPO interrupt configurability (open-drain), 40-year data retention, and password-protected memory segmentation across four user areas.

Technical Context

The device integrates two independent data paths: an I²C interface accessing memory byte-wise and an RF interface accessing 4-byte blocks per command under ISO/IEC 15693 and NFC Forum Type 5 compliance. Its analog front end includes 28.5 pF internal tuning capacitance and supports all ISO/IEC 15693 modulation modes and sub-carrier frequencies.

Fast Transfer Mode uses a dedicated 256-byte volatile buffer to synchronize data between RF and I²C domains without host intervention. The GPO pin-configured as open-drain in this variant-signals RF field change, memory write completion, or mailbox activity, enabling low-latency system wake-up or status monitoring.

Key Specifications

Pinout & Package

ST25DV64K-IER8T3 is supplied in an 8-pin TSSOP8 package (ECOPACK2, RoHS-compliant) with open-drain GPO output and no LPD/VDCG pins. Pin functions are validated per STMicroelectronics DS10925 Rev 11 (Figure 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dynamic NFC tag applications.

Compared with ST25DV16K-IER8T3, the ST25DV64K-IER8T3 provides 4× more EEPROM for extended firmware logs or multi-parameter calibration tables; versus NXH3670, it offers simpler integration, zero-power persistence, and deterministic RF/I²C coexistence-but no onboard processing.

Availability

ST25DV64K-IER8T3 is available at Aetrix Electronics and suitable for smart label deployment, industrial asset tagging, IoT sensor node configuration, and automotive aftermarket diagnostics requiring stable component supply across multi-year production cycles.

Supply support for ST25DV64K-IER8T3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power management ICs, sensors, and connectivity solutions for industrial, automotive, and consumer markets.

The ST25DVxxx product line targets secure, battery-free identification and configuration in harsh or space-constrained environments, combining NFC interoperability with robust EEPROM reliability and dual-interface flexibility.

FAQ

What is the function of the V_EH pin, and what load can it drive?

The V_EH pin delivers unregulated analog voltage harvested from the RF field, active only when field strength exceeds operational threshold. It is not a regulated power rail and cannot drive loads exceeding 1 mA; typical use is biasing low-power comparators or enabling ultra-low-quiescent LDOs for auxiliary sensors. No external capacitor is required, but layout must minimize parasitic capacitance to preserve fast turn-on response.

How does the GPO pin behave during RF field detection, and what pull-up value is required?

In ST25DV64K-IER8T3 (open-drain variant), GPO asserts low upon RF field detection, memory write completion, or Fast Transfer end-configurable via dynamic registers. It requires an external pull-up resistor ≥4.7 kΩ to V_CC; values >10 kΩ increase rise time and may cause missed interrupts in high-noise environments. Default mode is RF field change detection, and pulse duration is fixed at 10 µs unless modified via Manage GPO command.

Can the same memory address be accessed simultaneously via I²C and RF interfaces?

No-simultaneous access is blocked by hardware arbitration. When I²C is active, RF commands are ignored until I²C Stop condition is detected and internal write cycle completes (t_W ≤ 5 ms). Conversely, during RF operation, I²C transactions stall until RF session ends or times out. This prevents corruption but introduces interface switching latency; the 256-byte Mailbox mitigates this by decoupling bulk transfers from real-time constraints.

What is the minimum RF field strength required to power the device and enable energy harvesting?

Functional operation begins at −10 dBm (100 mV_rms) at the antenna terminals for basic RF communication; energy harvesting (V_EH output) activates above −5 dBm (178 mV_rms). Below −15 dBm, the device enters RF sleep mode and ignores commands. Field strength depends on reader output, antenna geometry, and coupling distance-ST recommends ≥5 mm air gap and Q-factor >25 for reliable V_EH delivery in production layouts.