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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB10NK60Z-1

Name: STB10NK60Z-1
Brand: STMicroelectronics
SKU: STB10NK60Z-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB10NK60Z-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STB10NK60Z-1.pdf

Description:: MOSFET N-CH 600V 10A I2PAK

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Product details

Overview

STB10NK60Z-1 from STMicroelectronics is a Zener-protected N-channel 600 V, 10 A SuperMESH Power MOSFET in D²PAK (TO-263) package, with typ. R_DS(on) = 0.68 Ω at V_GS = 10 V and 100% avalanche tested for robustness in high-dv/dt switching applications such as offline SMPS and PFC stages.

For engineers reviewing the STB10NK60Z-1 datasheet, STB10NK60Z-1 pinout, STB10NK60Z-1 application, or STB10NK60Z-1 equivalent, this device delivers verified avalanche energy (E_AS = 300 mJ), low gate charge (Q_g = 48–70 nC), and high di/dt immunity - critical for reliable operation in hard-switched industrial power converters.

Technical Context

This MOSFET employs ST's SuperMESH process - an evolution of PowerMESH - to simultaneously reduce on-resistance and enhance dv/dt ruggedness without compromising safe operating area (SOA). Its integrated gate-source Zener protection enables direct drive without external clamping in noisy environments.

The device features a fast body diode with t_rr = 570 ns and Q_rr = 4.3 µC at TJ = 150 °C, supporting efficient inductive turn-off in flyback and resonant topologies. Thermal resistance R_thJC = 1.09 °C/W (D²PAK) ensures effective heat transfer to PCB copper or heatsink.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full mains rectified voltage (e.g., 400 V DC + margin) in offline converters without derating.
R_DS(on) typ.	0.68 Ω - Enables <1.5 W conduction loss at 10 A continuous drain current (T_C = 25 °C).
Q_g	48–70 nC - Low gate charge reduces driver power demand and switching losses in 50–100 kHz SMPS designs.
E_AS	300 mJ - Single-pulse avalanche rating allows reliable operation during transient overvoltage events (e.g., transformer leakage spikes).
dv/dt capability	4.5 V/ns - Confirmed peak diode recovery slope supports stable operation in high-speed hard-switched circuits with fast voltage transients.
t_rr	570 ns - Fast reverse recovery minimizes commutation losses and EMI in bridge-leg and synchronous rectifier configurations.
P_TOT	115 W (T_C = 25 °C) - High power dissipation capacity enables use in compact, thermally constrained industrial power modules.

Pinout & Package

D²PAK (TO-263) package: surface-mount, single-ended lead frame with exposed drain tab (pin 2) for thermal and electrical connection to PCB copper pour. Standard JEDEC MO-211 variant with 3-pin configuration and 2.54 mm pitch.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control input; requires ≤±30 V drive; internal Zener clamps ±20 V to protect oxide layer.
2 (D / TAB)	Drain / Exposed Pad	Primary high-voltage output node and thermal path; must be soldered to ≥1 in² 2-oz copper for R_thJA = 35 °C/W.
3 (S)	Source	Power return reference; connects to ground or low-side switch node; defines V_GS control loop reference.

Key Features

Feature	Design Value
100% avalanche tested	Every unit validated for E_AS = 300 mJ - eliminates field failure risk from unclamped inductive switching stress.
Zener-protected gate	Integrated bidirectional 20 V Zener between G and S - removes need for external TVS in cost-sensitive industrial drives.
Extremely high dv/dt capability	Rated 4.5 V/ns under ISD ≤ 10 A, di/dt ≤ 200 A/μs - prevents spurious turn-on in high-noise motor control inverters.
SuperMESH technology	Optimized cell layout achieves 0.68 Ω R_DS(on) at 600 V - improves efficiency vs. legacy PowerMESH by ~15% at 10 A.
Low Q_gd/Q_gs ratio	Q_gd = 25 nC, Q_gs = 10 nC - enhances Miller immunity and enables stable operation with standard gate drivers (e.g., IR2110).

Applications

AC-DC Power Supplies

Industrial Motor Drives

Use Scenario: Primary-side switch in 100–300 W offline flyback and forward converters.

IC Role / Device Role / Timing Role: High-voltage switching element handling full rectified mains voltage with zero-voltage switching assist.

Use Value: 600 V rating and 300 mJ avalanche energy prevent failure during output short-circuit or transformer saturation events.

Use Scenario: Half-bridge leg in 3-phase inverter for HVAC compressors and pump controllers.

IC Role / Device Role / Timing Role: Low-side switching device with fast body diode recovery enabling efficient shoot-through protection.

Use Value: 570 ns t_rr and 4.3 µC Q_rr reduce switching losses and EMI during PWM dead-time transitions.

LED Street Lighting Drivers

Telecom Rectifiers

Use Scenario: Switching transistor in isolated buck-boost LED drivers for outdoor luminaires.

IC Role / Device Role / Timing Role: Constant-current regulation switch operating at 60–100 kHz with high duty-cycle stability.

Use Value: 0.68 Ω R_DS(on) maintains >92% efficiency at 10 A load while minimizing heatsink size in sealed enclosures.

Use Scenario: Primary switch in 48 V telecom rectifier front-end with active PFC stage.

IC Role / Device Role / Timing Role: High-reliability switching element in continuous conduction mode (CCM) boost converter.

Use Value: 4.5 V/ns dv/dt rating ensures noise immunity against bus transients in multi-rack data center power systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK60Z	Same die, TO-220 package; R_thJC = 3.6 °C/W vs. 1.09 °C/W; no exposed drain tab.	Requires mechanical heatsink mounting; unsuitable for high-density SMT layouts.	Select when through-hole assembly or discrete heatsinking is preferred over PCB thermal management.
FDPF10N60NZ	ON Semiconductor part; R_DS(on) = 0.72 Ω; Q_g = 52 nC; not 100% avalanche tested.	Lacks guaranteed E_AS rating; requires external gate Zener for same robustness level.	Choose only if cost sensitivity outweighs need for certified avalanche ruggedness in non-safety-critical designs.

Compared with STP10NK60Z and FDPF10N60NZ, STB10NK60Z-1 offers superior thermal performance via D²PAK's low R_thJC, guaranteed avalanche endurance, and integrated gate protection - making it the preferred choice for space-constrained, high-reliability industrial power stages.

Availability

STB10NK60Z-1 is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor drives, LED street lighting drivers, and telecom rectifiers requiring stable component supply and long-term industrial lifecycle support.

Supply support for STB10NK60Z-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's SuperMESH Power MOSFET product line - engineered specifically for high-efficiency, high-reliability switching in 50–300 kHz industrial power conversion systems where avalanche ruggedness and thermal performance are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current (I_D) at T_C = 100 °C is 5.7 A, as specified in Table 1 of DS2635 Rev 12. This rating reflects thermal derating due to junction-to-case thermal resistance (R_thJC = 1.09 °C/W) and ensures safe operation within the SOA limits at elevated temperatures.

Does STB10NK60Z-1 include integrated gate protection?

Yes - the device integrates a bidirectional gate-source Zener diode rated at ±20 V, confirmed in the "Features" section and Table 4 (I_GSS test condition). This eliminates the need for external gate clamping components in most industrial drive and SMPS applications.

Can STB10NK60Z-1 replace STB10NK60ZT4 in new designs?

No - STB10NK60Z-1 is obsolete per DS2635 Rev 12 (July 2025), which explicitly states "Removed order code STB10NK60Z-1". STB10NK60ZT4 is the active, tape-and-reel packaged version with identical electrical specs and D²PAK (TO-263) type A mechanical outline.

What is the recommended PCB footprint for thermal performance?

The recommended D²PAK footprint uses ≥1 in² of 2-oz copper connected directly to the exposed drain tab (pin 2), per Table 2 footnote. Figure 25 in DS2635 Rev 12 provides exact pad dimensions, including 8.95–9.35 mm D-width and 10.00–10.40 mm E-length for optimal solder joint reliability and thermal conduction.

STB10NK60Z-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1370 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STB10NK60Z-1 FAQ

1.How can I place an order for STB10NK60Z-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB10NK60Z-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB10NK60Z-1 reliable?

The price and inventory of STB10NK60Z-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB10NK60Z-1 is usually 5 days.

3.What payment methods are accepted for STB10NK60Z-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB10NK60Z-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB10NK60Z-1?

STB10NK60Z-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB10NK60Z-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB10NK60Z-1?

For technical support, including STB10NK60Z-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB10NK60Z-1 requirements.

6.How does Aetrix verify that STB10NK60Z-1 is sourced from the original manufacturer or authorized distributors?

All STB10NK60Z-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB10NK60Z-1 meets industry standards.

7.What is the process for return or replacement of STB10NK60Z-1?

All STB10NK60Z-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB10NK60Z-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB10NK60Z-1 part is unused and in its original packaging.

Return procedure for STB10NK60Z-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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