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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB16NS25T4

Name: STB16NS25T4
Brand: STMicroelectronics
SKU: STB16NS25T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB16NS25T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB16NS25T4.pdf

Description:: MOSFET N-CH 250V 16A D2PAK

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Product details

Overview

STB16NS25T4 from STMicroelectronics is an N-channel enhancement-mode power MOSFET in D2PAK package, rated for 250 V V_DSS, 0.23 Ω R_DS(on) at V_GS = 10 V and I_D = 8 A, with 16 A continuous drain current at T_C = 25°C. It features 100% avalanche tested ruggedness, 5 V/ns dv/dt capability, and is optimized for high-speed switching in lighting ballasts and telecom DC-DC converters.

For engineers reviewing the STB16NS25T4 datasheet, STB16NS25T4 pinout, STB16NS25T4 application, or STB16NS25T4 equivalent, this device is selected for high-current, high-voltage switching where low conduction loss, fast turn-on/off times (15 ns t_d(on), 75 ns t_d(off)), and robust unclamped inductive switching performance are critical.

Technical Context

This MOSFET employs ST's proprietary MESH OVERLAY™ process and STrip layout with edge termination, enabling high voltage blocking (250 V) while maintaining low on-resistance (0.23 Ω typ). Its gate charge profile (Q_g = 60–80 nC, Q_gd = 22 nC) supports efficient high-frequency operation in hard-switched topologies.

The integrated body diode exhibits 1.5 V forward voltage at 16 A and 270 ns reverse recovery time (t_rr) under specified conditions (I_SD = 16 A, di/dt = 100 A/µs, T_j = 150°C), making it suitable for freewheeling and synchronous rectification roles in non-isolated converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - Maximum drain-source blocking voltage before avalanche onset; defines safe operating range in 200 V bus applications.
R_DS(on)	0.23 Ω (typ) at V_GS = 10 V, I_D = 8 A - Directly determines conduction loss (P_cond ≈ I² × R) in continuous high-current paths.
I_D (cont)	16 A at T_C = 25°C - Specifies maximum steady-state current with heatsink; derates to 11 A at T_C = 100°C.
Q_g	60–80 nC - Total gate charge required for full turn-on; impacts driver power requirement and switching loss at high frequency.
t_d(off)	75 ns - Turn-off delay time under 125 V V_DD, 8 A I_D, 4.7 Ω gate resistance; constrains minimum achievable switching period.
E_AS	200 mJ - Single-pulse avalanche energy rating at T_j = 25°C; enables reliable operation during transient overvoltage events without external snubbers.
R_thj-case	0.9 °C/W - Junction-to-case thermal resistance; determines temperature rise across die-to-heatsink interface under 140 W dissipation.

Pinout & Package

Package: D2PAK (TO-263), surface-mount, single-ended heat sink compatible, with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path; carries full load current in low-side switch configuration.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; driven by 10 V logic-level signal for full enhancement.
Pin 3 (Drain)	Power output / high-side node	Exposed metal tab (Pin 3) is electrically connected to drain; must be isolated from heatsink unless referenced to same potential.

Key Features

Feature	Design Value
MESH OVERLAY™ process	Enables 250 V breakdown with 0.23 Ω R_DS(on), improving power density vs. conventional planar high-voltage MOSFETs.
100% avalanche tested	Guarantees minimum 200 mJ single-pulse avalanche energy handling without parameter shift or failure.
5 V/ns dv/dt capability	Prevents spurious turn-on during fast voltage transients in high-noise SMPS and motor drive environments.
Low Q_gd/Q_g ratio (≈0.275)	Reduces Miller-induced switching instability and improves controllability in hard-switched converters.
STrip layout + edge termination	Minimizes electric field crowding at junction periphery, enhancing long-term reliability under repetitive stress.

Applications

LED Streetlight Ballast

Telecom DC-DC Converter

Use Scenario: High-efficiency buck-boost LED driver operating from 176–264 VAC rectified bus with active PFC front-end.

IC Role / Device Role / Timing Role: Primary high-side switching element in resonant half-bridge topology, switching at 50–100 kHz.

Use Value: Low R_DS(on) reduces conduction loss in 16 A peak current paths; avalanche rating eliminates need for external clamping diodes during lamp hot-plug events.

Use Scenario: Isolated forward converter delivering 48 V/20 A output from -48 V telecom battery backup system.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous rectification stage.

Use Value: Fast t_rr (270 ns) and low V_SD (1.5 V) minimize reverse recovery loss and forward conduction loss versus Schottky alternatives.

Industrial Motor Starter

UPS Inverter Stage

Use Scenario: Soft-start circuit for 3-phase induction motor drives using phase-angle control with zero-cross detection.

IC Role / Device Role / Timing Role: Main AC line switch in back-to-back configuration for bidirectional current control.

Use Value: High dv/dt immunity prevents false triggering during commutation spikes; 175°C T_j(max) supports operation in enclosed cabinets without forced air.

Use Scenario: High-frequency H-bridge in online double-conversion UPS converting 380 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: High-side switch in leg driving transformer primary winding.

Use Value: Robust SOA allows safe operation during short-circuit fault conditions; low C_oss (190 pF) minimizes capacitive turn-off loss at 20 kHz switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF25	Same die, TO-220 package; higher R_thj-amb (62.5 °C/W vs. 0.9 °C/W case); no exposed drain pad.	Limited to lower-power designs (<50 W) due to inferior thermal coupling; unsuitable for surface-mount PCB layouts.	Select when through-hole mounting and manual heatsinking are preferred over automated SMT assembly.
IRFP460	200 V V_DSS, 0.27 Ω R_DS(on), TO-247; higher Q_g (140 nC); no avalanche rating specified.	Requires external avalanche protection in inductive switching; less suitable for lighting ballasts with frequent hot-restart cycles.	Choose only if legacy design compatibility or higher voltage margin (200 V vs. 250 V) is not required.

Compared with STP16NF25 and IRFP460, STB16NS25T4 delivers superior thermal performance via D2PAK's low R_thj-case, guaranteed avalanche ruggedness for lighting surge immunity, and tighter R_DS(on) tolerance-making it optimal for space-constrained, high-reliability industrial switching.

Availability

STB16NS25T4 is available at Aetrix Electronics and suitable for LED streetlight ballasts, telecom DC-DC converters, and industrial motor starters requiring stable component supply and long-term production continuity.

Supply support for STB16NS25T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

The STB16NS25 belongs to ST's high-voltage power MOSFET product line, engineered specifically for rugged, high-efficiency switching in lighting, telecom, and industrial power conversion systems.

FAQ

Is STB16NS25T4 RoHS compliant?

Yes, STB16NS25T4 is RoHS compliant and lead-free per EU Directive 2011/65/EU. The device uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30°C/60% RH.

What is the maximum gate-source voltage rating?

The absolute maximum V_GS is ±20 V. Operation above ±20 V risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement; gate drive circuits must include clamping (e.g., Zener diode) to prevent overshoot beyond this limit.

Can STB16NS25T4 be used in parallel configurations?

Yes, but requires careful attention to gate drive matching and current sharing. Its positive temperature coefficient of R_DS(on) (confirmed in datasheet Fig. 5) promotes inherent current balancing above 100°C, though individual gate resistors (≤4.7 Ω) and symmetrical PCB layout are mandatory for stable parallel operation.

Does STB16NS25T4 have a built-in ESD protection diode?

No, STB16NS25T4 does not integrate gate ESD protection. Gate-body leakage is specified at ±100 nA at ±20 V, indicating absence of internal clamping diodes. External gate protection (e.g., 12 V Zener between G-S) is strongly recommended during handling and PCB assembly.

STB16NS25T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MESH OVERLAY™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB16NS25T4 FAQ

1.How can I place an order for STB16NS25T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB16NS25T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB16NS25T4 reliable?

The price and inventory of STB16NS25T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB16NS25T4 is usually 5 days.

3.What payment methods are accepted for STB16NS25T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB16NS25T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB16NS25T4?

STB16NS25T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB16NS25T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB16NS25T4?

For technical support, including STB16NS25T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB16NS25T4 requirements.

6.How does Aetrix verify that STB16NS25T4 is sourced from the original manufacturer or authorized distributors?

All STB16NS25T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB16NS25T4 meets industry standards.

7.What is the process for return or replacement of STB16NS25T4?

All STB16NS25T4 units undergo pre-shipment inspection (PSI). If there is an issue with STB16NS25T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB16NS25T4 part is unused and in its original packaging.

Return procedure for STB16NS25T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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