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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB5N62K3

Name: STB5N62K3
Brand: STMicroelectronics
SKU: STB5N62K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB5N62K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB5N62K3.pdf

Description:: MOSFET N-CH 620V 4.2A D2PAK

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Product details

Overview

STB5N62K3 from STMicroelectronics is an N-channel 620 V, 1.28 Ω typ., 4.2 A MDmesh™ K3 Power MOSFET in TO-220 package, designed as a high-voltage switching device for offline SMPS primary-side power switches, PFC stages, and industrial AC-DC converters. It features 100% avalanche tested ruggedness, 12 V/ns dv/dt capability, and built-in Zener-protected gate.

For engineers reviewing the STB5N62K3 datasheet, STB5N62K3 pinout, STB5N62K3 application, or STB5N62K3 equivalent, key selection criteria include its 620 V V_DS, 1.28 Ω R_DS(on) at V_GS = 10 V, 120 mJ single-pulse avalanche energy, and optimized diode reverse recovery (t_rr = 290 ns at T_j = 25 °C).

Technical Context

This MDmesh™ K3 MOSFET employs an optimized vertical structure to reduce on-resistance while maintaining high voltage blocking. Its gate threshold voltage (V_GS(th) = 3.0–4.5 V) ensures reliable turn-on with standard 10 V gate drivers, and its low C_iss (680 pF) and C_rss (8 pF) support high-frequency hard-switching up to 100 kHz.

The integrated source-drain diode exhibits improved reverse recovery characteristics (Q_rr = 1.9 µC, I_RRM = 13 A), and the Zener-protected gate (±30 V V_(BR)GSO) eliminates need for external gate clamping in noisy industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	620 V - Rated drain-source breakdown voltage; supports 400 VAC mains input with 2× safety margin in flyback and LLC topologies.
R_DS(on) max	1.6 Ω - Maximum on-resistance at V_GS = 10 V, ID = 2.1 A; defines conduction loss in continuous conduction mode operation.
I_D (cont)	4.2 A at T_C = 25 °C - Continuous drain current rating; derates to 3 A at T_C = 100 °C per thermal limits.
E_AS	120 mJ - Single-pulse avalanche energy at T_j = 25 °C; enables robust unclamped inductive switching without external snubbers.
t_rr	290 ns - Diode reverse recovery time at I_SD = 4.2 A, di/dt = 100 A/µs; reduces switching loss and EMI in bridge-leg configurations.
dv/dt	12 V/ns - Peak diode recovery voltage slope; ensures immunity to parasitic turn-on during fast voltage transients in high-noise environments.
Q_g	26 nC - Total gate charge at V_DD = 496 V, I_D = 4.2 A; determines gate driver power requirement and switching speed trade-off.

Pinout & Package

STB5N62K3 is housed in a TO-220 package with isolated tab (Type A), where the tab is electrically connected to the drain terminal. Thermal resistance junction-to-case is 5 °C/W, enabling direct mounting to heatsinks without insulating pads when isolation is not required.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode; requires ≤ ±30 V drive; Zener-protected to withstand ESD and transient overvoltage.
2 (D)	Drain	Main high-voltage power terminal; connected to internal die backside and metal tab; must be isolated if heatsink is grounded.
3 (S)	Source	Power return path and reference for gate drive; forms common node with driver ground in non-isolated topologies.

Key Features

Feature	Design Value
MDmesh™ K3 vertical structure	Reduces R_DS(on) × area by 30% vs. prior K2 generation, enabling higher power density in same TO-220 footprint.
100% avalanche tested	Every unit validated for 4.2 A repetitive avalanche current, ensuring field reliability in overload and short-circuit conditions.
Zener-protected gate	Integrated ±30 V bidirectional Zener clamps gate-source voltage, eliminating need for external TVS in cost-sensitive industrial designs.
Low C_oss eq.	16.6 pF equivalent output capacitance across 0–496 V; minimizes turn-off loss and improves light-load efficiency in QR flyback converters.
Improved diode Q_rr	1.9 µC reverse recovery charge at 25 °C; reduces diode-induced shoot-through risk and EMI in synchronous rectification and half-bridge circuits.

Applications

Industrial AC-DC Power Supplies

LED Streetlight Drivers

Use Scenario: Primary-side switch in 150 W universal-input flyback converter for factory automation control panels.

IC Role / Device Role / Timing Role: High-voltage power switch operating in quasi-resonant mode at 65–100 kHz, handling 400 VDC bus transients.

Use Value: 120 mJ avalanche energy prevents failure during output short-circuit events; 12 V/ns dv/dt rating suppresses false triggering from transformer leakage spikes.

Use Scenario: Main switch in constant-current LED driver for outdoor 100 W streetlights with surge immunity to 4 kV line-to-line.

IC Role / Device Role / Timing Role: Hard-switched buck-boost controller primary FET, cycling at 75 kHz with 50% duty cycle under full load.

Use Value: Low 1.28 Ω R_DS(on) maintains >92% efficiency at 40 °C ambient; Zener-protected gate survives repeated 2 kV ESD events on PCB assembly lines.

Server PSU PFC Stages

Induction Heating Inverters

Use Scenario: Boost switch in active PFC front-end of 500 W telecom server power supply compliant with EN 61000-3-2 Class C.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost transistor switching at 100 kHz with sinusoidal input current shaping.

Use Value: 290 ns t_rr and 1.9 µC Q_rr minimize diode commutation loss and THD; 680 pF C_iss enables stable gate drive with 10 Ω series resistor.

Use Scenario: Half-bridge leg switch in 3 kW resonant induction heater for metal forging, operating at 20–50 kHz with high di/dt stress.

IC Role / Device Role / Timing Role: High-side and low-side switching element subjected to 400 A/µs di/dt during zero-voltage switching transitions.

Use Value: 400 A/ns di/dt rating ensures no parasitic turn-on; 5 °C/W R_thj-case allows 70 W dissipation with 10 °C/W heatsink, sustaining 100% duty cycle bursts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5N62K3	Identical electrical specs and die; differs only in TO-220 mechanical outline (Type A vs. Type B), with identical pinout and thermal resistance.	No functional difference; both rated for same 70 W P_TOT at T_C = 25 °C and share identical SOA curves.	Select STP5N62K3 if legacy board layout uses standard TO-220 hole pattern per IEC 60747-16.
FQP5N62	Higher R_DS(on) (1.8 Ω max), lower E_AS (75 mJ), no Zener gate protection, and slower t_rr (450 ns).	Not suitable for unclamped inductive loads or high-dv/dt industrial noise; requires external gate clamp and snubber.	Choose only for cost-driven consumer-grade designs where avalanche robustness and EMI immunity are secondary.

Compared with STP5N62K3, STB5N62K3 offers identical performance but may differ in mechanical tolerances affecting heatsink interface; versus FQP5N62, it delivers 38% lower conduction loss, 60% higher avalanche energy, and integrated gate protection-critical for industrial reliability.

Availability

STB5N62K3 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED streetlight drivers, and server PSU PFC stages requiring stable component supply and long-term manufacturability.

Supply support for STB5N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STB5N62K3 belongs to the MDmesh™ K3 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching applications demanding superior avalanche ruggedness and fast dynamic performance.

FAQ

What is the maximum gate-source voltage rating for STB5N62K3?

The absolute maximum gate-source voltage is ±30 V, enforced by integrated back-to-back Zener diodes. This eliminates need for external gate clamping components and protects against ESD and transient overvoltage during PCB handling or system startup.

Can STB5N62K3 replace STP5N62K3 in existing designs?

Yes-STB5N62K3 and STP5N62K3 share identical electrical specifications, pinout, thermal resistance (5 °C/W), and SOA curves. Mechanical differences are limited to minor TO-220 outline tolerances; no layout or thermal redesign is required for drop-in replacement.

What is the safe operating area limitation at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is derated to 3 A due to junction temperature limits. The SOA curve (Figure 5) shows operation is bounded by R_DS(on) at DC and pulse widths < 10 ms, with peak pulsed current capped at 16.8 A for < 10 µs pulses.

Does STB5N62K3 require a gate resistor for stability?

A gate resistor of 4.7 Ω is recommended per Figure 18 test circuit to dampen ringing and control dV/dt during switching. Lower values increase switching speed but risk oscillation; higher values reduce EMI but raise switching losses-optimize based on measured gate waveform and thermal budget.

STB5N62K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 620 V

Current - Continuous Drain (Id) @ 25°C:: 4.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.6Ohm @ 2.1A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 680 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB5N62K3 FAQ

1.How can I place an order for STB5N62K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB5N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB5N62K3 reliable?

The price and inventory of STB5N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB5N62K3 is usually 5 days.

3.What payment methods are accepted for STB5N62K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB5N62K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB5N62K3?

STB5N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB5N62K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB5N62K3?

For technical support, including STB5N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB5N62K3 requirements.

6.How does Aetrix verify that STB5N62K3 is sourced from the original manufacturer or authorized distributors?

All STB5N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB5N62K3 meets industry standards.

7.What is the process for return or replacement of STB5N62K3?

All STB5N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STB5N62K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB5N62K3 part is unused and in its original packaging.

Return procedure for STB5N62K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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