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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB60NH02LT4

Name: STB60NH02LT4
Brand: STMicroelectronics
SKU: STB60NH02LT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB60NH02LT4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB60NH02LT4.pdf

Description:: MOSFET N-CH 24V 60A D2PAK

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Product details

Overview

STB60NH02LT4 from STMicroelectronics is an N-channel enhancement-mode power MOSFET in D²PAK (TO-263) package, rated for 24 V V_DSS, 60 A continuous drain current at T_C = 25°C, and 0.0085 Ω typical R_DS(on) at V_GS = 10 V. It is optimized for high-efficiency DC-DC converters where low conduction and switching losses are critical.

For engineers reviewing the STB60NH02LT4 datasheet, STB60NH02LT4 pinout, STB60NH02LT4 application, or STB60NH02LT4 equivalent, key selection criteria include its low-threshold gate drive (V_GS(th) = 1–2.5 V), industry-benchmark R_DS(on) × Q_g figure of merit, and surface-mount D²PAK thermal performance in high-current power stages.

Technical Context

This MOSFET employs ST's proprietary STripFET™ III process, delivering reduced R_DS(on) and optimized gate charge (Q_g = 24 nC typ., Q_gd = 3.4 nC) for fast switching with minimal overlap loss. Its low V_GS(th) enables direct drive from 3.3 V or 5 V logic controllers without level-shifting.

The device integrates a robust body diode with t_rr = 36 ns and Q_rr = 36 nC at di/dt = 100 A/µs, supporting synchronous rectification and unclamped inductive switching up to 280 mJ single-pulse avalanche energy.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	24 V - Maximum blocking voltage in DC-DC primary/secondary switches
R_DS(on) @ V_GS=10 V	0.0085 Ω typ. - Enables <1 W conduction loss at 30 A in 12 V output rails
I_D (continuous)	60 A @ T_C = 25°C - Supports high-current POL converters and motor drivers
Q_g	24 nC typ. - Low gate drive power requirement for 500 kHz+ switching
t_r/t_f	130 ns / 21.6 ns - Fast edge control minimizes switching transition losses
E_AS	280 mJ - Withstands unclamped inductive energy in hard-switched topologies
V_GS(th)	1.0–2.5 V - Compatible with 3.3 V microcontroller GPIO or PWM controllers

Pinout & Package

Package: D²PAK (TO-263), surface-mount, single-die N-channel MOSFET with exposed drain pad for thermal dissipation. Pin assignment verified per STMicroelectronics mechanical drawing and internal schematic.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 0–20 V gate drive; low C_iss = 1400 pF reduces driver loading
Pin 2 (D)	Drain	Main power output node; electrically connected to exposed metal tab for heatsinking
Pin 3 (S)	Source	Power return path and reference for gate drive; tied to PCB ground plane

Key Features

Feature	Design Value
STripFET™ III process	Enables 0.0085 Ω R_DS(on) in D²PAK, reducing die size and thermal resistance vs prior generations
R_DS(on) × Q_g benchmark	Industry-leading figure of merit ensures optimal trade-off between conduction and switching loss
Low-threshold gate	V_GS(th) down to 1.0 V allows direct interface with 3.3 V logic without gate driver IC
Robust body diode	t_rr = 36 ns and Q_rr = 36 nC support efficient synchronous rectification in buck converters
D²PAK thermal design	R_thj-case = 2.14 °C/W enables >50 W dissipation with moderate heatsinking

Applications

DC-DC Buck Converter

High-Current Load Switch

Use Scenario: 12 V input to 1.2 V/40 A output VRM for server CPU core supply.

IC Role / Device Role: High-side synchronous rectifier switch in multiphase buck stage.

Use Value: 0.0085 Ω R_DS(on) limits conduction loss to ≤1.4 W at 40 A, improving full-load efficiency by ≥1.2% vs legacy 12 mΩ devices.

Use Scenario: Hot-swap power sequencing for industrial I/O module with 24 V/30 A rail.

IC Role / Device Role: Low-side load switch controlling power delivery to downstream peripherals.

Use Value: 60 A rating and 280 mJ E_AS withstand inrush and fault currents without SOA violation during hot-plug events.

Motor Drive Half-Bridge

OR-ing Diode Replacement

Use Scenario: 24 V BLDC gate driver stage for HVAC fan actuator (15 A RMS).

IC Role / Device Role: Low-side switch in half-bridge topology with bootstrap gate drive.

Use Value: Fast t_f = 21.6 ns and low Q_gd = 3.4 nC minimize shoot-through risk and dead-time loss.

Use Scenario: Redundant 12 V power supply OR-ing in telecom shelf backplane.

IC Role / Device Role: Active OR-ing FET replacing Schottky diode in ideal diode controller circuit.

Use Value: V_SD = 1.3 V at 30 A yields 39 W less heat vs 0.45 V Schottky, enabling passive cooling in dense chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6644TRPbF	R_DS(on) = 0.0055 Ω @ 10 V; Q_g = 27 nC; D²PAK-7L package with Kelvin source	Better R_DS(on) but higher Q_g; requires 4-pin layout for source sensing	Preferred for ultra-high-efficiency 1 MHz+ GaN-assisted converters needing Kelvin source feedback
IXTP60N20T	R_DS(on) = 0.020 Ω @ 10 V; TO-220 package; V_DSS = 200 V	Higher voltage rating but 2.4× higher R_DS(on); through-hole mounting only	Suitable for lower-frequency (<200 kHz), higher-voltage industrial SMPS where D²PAK footprint is unavailable

Compared with IRF6644TRPbF and IXTP60N20T, STB60NH02LT4 offers the best balance of low R_DS(on), moderate Q_g, and standard 3-pin D²PAK compatibility-ideal for cost-sensitive, high-volume DC-DC designs operating below 1 MHz.

Availability

STB60NH02LT4 is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, industrial load switches, motor drive half-bridges, and OR-ing diode replacements requiring stable component supply and long-term manufacturability.

Supply support for STB60NH02LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ III power MOSFET product line, engineered specifically for high-current, high-frequency DC-DC conversion in computing, telecom, and industrial power supplies.

FAQ

What is the maximum safe operating junction temperature for STB60NH02LT4?

The absolute maximum operating junction temperature is 175°C, with derating beginning at T_C = 25°C at 0.47 W/°C. Thermal resistance R_thj-case is 2.14°C/W, so sustained 60 A operation requires case temperature ≤85°C to maintain T_j < 150°C under typical PCB copper area and airflow conditions.

Can STB60NH02LT4 be driven directly from a 3.3 V microcontroller GPIO?

Yes-its gate threshold voltage range is 1.0–2.5 V, and it delivers usable R_DS(on) = 0.012 Ω at V_GS = 5 V. At 3.3 V, it achieves partial enhancement (R_DS(on) ≈ 0.020 Ω max), sufficient for low-duty-cycle or low-current applications; for full 60 A capability, a dedicated gate driver is recommended.

Does STB60NH02LT4 have avalanche ruggedness specified in the datasheet?

Yes-single-pulse avalanche energy E_AS is guaranteed at 280 mJ (T_j = 25°C, I_D = 25 A, V_DD = 15 V). This rating supports reliable operation in unclamped inductive switching events common in motor drives and relay snubbers without external protection.

Is the D²PAK package of STB60NH02LT4 lead-free and RoHS-compliant?

Yes-the STB60NH02LT4 is manufactured in accordance with RoHS Directive 2011/65/EU and is lead-free. The "T4" suffix denotes tape-and-reel packaging compliant with JEDEC J-STD-020 moisture sensitivity level 3 (MSL3), with peak reflow temperature up to 260°C.

STB60NH02LT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 24 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB60NH02LT4 FAQ

1.How can I place an order for STB60NH02LT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB60NH02LT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB60NH02LT4 reliable?

The price and inventory of STB60NH02LT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB60NH02LT4 is usually 5 days.

3.What payment methods are accepted for STB60NH02LT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB60NH02LT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB60NH02LT4?

STB60NH02LT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB60NH02LT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB60NH02LT4?

For technical support, including STB60NH02LT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB60NH02LT4 requirements.

6.How does Aetrix verify that STB60NH02LT4 is sourced from the original manufacturer or authorized distributors?

All STB60NH02LT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB60NH02LT4 meets industry standards.

7.What is the process for return or replacement of STB60NH02LT4?

All STB60NH02LT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB60NH02LT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB60NH02LT4 part is unused and in its original packaging.

Return procedure for STB60NH02LT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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