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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB6N62K3

Name: STB6N62K3
Brand: STMicroelectronics
SKU: STB6N62K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB6N62K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB6N62K3.pdf

Description:: MOSFET N-CH 620V 5.5A D2PAK

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Product details

Overview

STB6N62K3 from STMicroelectronics is an N-channel 620 V, 0.95 Ω (typ), 5.5 A SuperMESH3™ Power MOSFET in D²PAK (TO-263) package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It features 140 mJ single-pulse avalanche energy, 12 V/ns dv/dt capability, and integrated gate-source Zener protection at ±30 V.

For engineers reviewing the STB6N62K3 datasheet, STB6N62K3 pinout, STB6N62K3 application, or STB6N62K3 equivalent, this device is selected for high-reliability 600 V-class power conversion where low R_DS(on), fast switching, and robust avalanche performance are critical - especially in space-constrained designs requiring D²PAK thermal performance.

Technical Context

This MOSFET employs ST's SuperMESH3™ vertical structure to achieve ultra-low on-resistance while maintaining high voltage blocking. Its optimized charge profile delivers Q_g = 34 nC and Q_gd/Q_gs ratio of ~5.5, supporting efficient hard-switching at high frequencies up to 100 kHz.

The integrated back-to-back Zener diodes clamp gate-source voltage to ±30 V, eliminating external TVS requirements. Diode recovery is enhanced with t_rr = 290 ns (T_j = 25 °C) and soft recovery behavior confirmed by low I_RRM = 13.5 A under 100 A/µs di/dt stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	620 V - Supports 400 V AC mains input with ≥20% safety margin in flyback/PFC topologies.
R_DS(on) max	1.2 Ω @ V_GS = 10 V, I_D = 2.8 A - Enables <1.5 W conduction loss at 5.5 A DC, reducing heatsink size.
Q_g	34 nC - Low gate drive power requirement; compatible with standard 1 A peak gate drivers.
E_AS	140 mJ - Withstands unclamped inductive switching events without failure in relay/snubberless designs.
t_r/t_f	12 ns / 20 ns @ V_DD = 310 V - Minimizes switching transition losses and EMI generation.
R_thj-case	1.39 °C/W - Enables 90 W continuous dissipation with modest heatsinking (e.g., 25 mm × 25 mm copper area).
V_(BR)GSO	30 V - Integrated Zener clamps gate transients, removing need for external gate protection components.

Pinout & Package

D²PAK (TO-263) package: surface-mount, single-ended heat sink tab (drain-connected), 3-pin outline with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Tab (D)	Drain	Electrically and thermally connected to internal die drain; must be soldered to PCB copper pour for thermal management and current return path.
Pin 1 (G)	Gate	Control terminal; driven by isolated gate driver; sensitive to ESD (protected by integrated Zener).
Pin 3 (S)	Source	Reference node for gate drive and load current return; forms common source configuration with drain-tab layout.

Key Features

Feature	Design Value
100% avalanche tested	Every unit validated for 140 mJ single-pulse energy at T_j = 25 °C - ensures production-line robustness in inductive switching.
Extremely high dv/dt capability	12 V/ns rated - suppresses false turn-on during high-speed commutation in bridge configurations.
Minimized gate charge	Q_g = 34 nC with Q_gd = 22 nC - reduces Miller-induced oscillation risk and enables faster turn-off.
Improved diode reverse recovery	t_rr = 290 ns, Q_rr = 1900 nC - lowers recovery loss and EMI vs legacy SuperMESH devices.
Zener-protected gate	V_(BR)GSO = 30 V - eliminates discrete gate clamp diodes, simplifying layout and improving reliability.

Applications

AC-DC Adapter Primary Switch

Industrial PFC Boost Stage

Use Scenario: 65–100 W universal-input offline flyback converter operating at 65 kHz.

IC Role / Device Role / Timing Role: Main high-side switch handling full primary current and 620 V blocking duty.

Use Value: Low R_DS(on) and soft diode recovery reduce conduction + switching losses by ~18% vs comparable 600 V MOSFETs, enabling higher efficiency at full load.

Use Scenario: 300–500 W active boost PFC front-end in industrial PLC power supplies.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 5.5 A peak inductor current at 70 kHz.

Use Value: 12 V/ns dv/dt rating prevents spurious turn-on during zero-crossing transitions, improving stability without snubbers.

LED Driver High-Voltage Buck

Motor Control Inverter Half-Bridge

Use Scenario: Constant-current 150 V output LED driver for street lighting using buck topology.

IC Role / Device Role / Timing Role: Low-side switching element in high-side buck configuration with 620 V bus.

Use Value: Integrated Zener protection eliminates external gate clamp, reducing BOM count and board area by 25% in compact outdoor-rated enclosures.

Use Scenario: 1 kW three-phase inverter for HVAC compressor control using discrete half-bridge modules.

IC Role / Device Role / Timing Role: Upper-leg switch in each phase leg, subjected to repetitive avalanche during short-circuit events.

Use Value: 140 mJ E_AS rating allows safe operation during 10 µs fault windows without desat protection circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6N62K3	TO-220 package, R_DS(on) max = 1.2 Ω, same V_DSS and Q_g; lacks Zener gate protection.	Requires external gate clamp; better suited for through-hole prototyping or lower-volume industrial controls.	Select when mechanical mounting flexibility outweighs surface-mount density and gate protection needs.
FDPF6N62	650 V rating, R_DS(on) = 1.4 Ω, Q_g = 32 nC; no integrated Zener; D²PAK-3L package identical footprint.	Higher voltage margin but higher conduction loss; gate drive design must include external protection.	Choose only if 650 V rating is mandatory and gate protection can be added externally without compromising layout.

Compared with STP6N62K3 and FDPF6N62, the STB6N62K3 uniquely combines D²PAK thermal performance, integrated gate Zener, and industry-leading 140 mJ avalanche energy - making it optimal for high-density, high-reliability 600 V switching where component count and fault resilience are prioritized.

Availability

STB6N62K3 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial PFC modules, LED drivers, and motor control inverters requiring stable component supply across multi-year production cycles.

Supply support for STB6N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MCU, and sensor technologies for industrial, automotive, and consumer markets.

This device belongs to ST's SuperMESH3™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability 600 V switching in space-constrained power converters where thermal performance and ruggedness are non-negotiable.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB6N62K3 supports 3 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the D²PAK package and ensures reliable operation within its 150 °C maximum junction temperature rating under sustained load conditions.

Does the STB6N62K3 require external gate protection?

No - the device integrates back-to-back Zener diodes between gate and source with a breakdown voltage of 30 V (±1 V tolerance), providing inherent protection against ESD and gate overvoltage transients. External clamping components are unnecessary unless system-level surge immunity exceeds 2.5 kV HBM.

How does the diode recovery performance compare to standard MOSFETs?

At I_SD = 5.5 A and di/dt = 100 A/µs, the STB6N62K3 achieves t_rr = 290 ns and Q_rr = 1900 nC at 25 °C - significantly improved over first-generation SuperMESH devices. Its soft recovery characteristic reduces ringing and EMI, verified by low I_RRM = 13.5 A.

Can STB6N62K3 be used in synchronous rectification?

No - it is an N-channel enhancement-mode MOSFET optimized for high-side or low-side switching in hard-switched topologies, not synchronous rectification. Its body diode is optimized for low Q_rr and soft recovery, but the device lacks the low forward voltage and bidirectional conduction characteristics required for SR control.

STB6N62K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 620 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 875 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB6N62K3 FAQ

1.How can I place an order for STB6N62K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB6N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB6N62K3 reliable?

The price and inventory of STB6N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB6N62K3 is usually 5 days.

3.What payment methods are accepted for STB6N62K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB6N62K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB6N62K3?

STB6N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB6N62K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB6N62K3?

For technical support, including STB6N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB6N62K3 requirements.

6.How does Aetrix verify that STB6N62K3 is sourced from the original manufacturer or authorized distributors?

All STB6N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB6N62K3 meets industry standards.

7.What is the process for return or replacement of STB6N62K3?

All STB6N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STB6N62K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB6N62K3 part is unused and in its original packaging.

Return procedure for STB6N62K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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