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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB6NK60Z-1

Name: STB6NK60Z-1
Brand: STMicroelectronics
SKU: STB6NK60Z-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB6NK60Z-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STB6NK60Z-1.pdf

Description:: MOSFET N-CH 600V 6A I2PAK

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Product details

Overview

STB6NK60Z-1 from STMicroelectronics is a Zener-protected N-channel 600 V, 1.2 Ω (max), 6 A SuperMESH Power MOSFET in I²PAK package, designed for high-voltage switching in offline SMPS, PFC stages, and AC-DC adapters. It delivers 100% avalanche tested ruggedness, 4.5 V/ns dv/dt capability, and 33 nC total gate charge for reliable hard-switching operation.

For engineers reviewing the STB6NK60Z-1 datasheet, STB6NK60Z-1 pinout, STB6NK60Z-1 application, or STB6NK60Z-1 equivalent, key selection criteria include its 600 V V_DS, 1.2 Ω R_DS(on) at 10 V_GS, 110 W P_TOT at T_C = 25 °C, 1.14 °C/W R_thJC, and Zener-protected gate for ESD robustness up to 3.5 kV HBM.

Technical Context

This device implements ST's SuperMESH process-a refined PowerMESH architecture-optimized for reduced on-resistance while preserving high dv/dt immunity and avalanche energy rating (E_AS = 210 mJ). Its gate threshold voltage (3.0–4.5 V) and low Crss (25 pF) support stable turn-on under noisy high-side configurations.

The integrated body diode exhibits t_rr = 445 ns and Q_rr = 2.7 µC at 150 °C, enabling efficient recovery in continuous conduction mode (CCM) PFC. Thermal resistance of 1.14 °C/W (junction-to-case) enables direct mounting to heatsinks without thermal derating penalties in 6 A DC applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full mains rectified voltage in universal-input 85–265 VAC systems without derating
R_DS(on) max	1.2 Ω @ V_GS = 10 V, I_D = 3 A - Enables <1.5 W conduction loss at 6 A, supporting compact thermal design
I_D cont @ T_C = 25 °C	6 A - Sustains full-load current in 100–150 W SMPS with minimal heatsink area
Q_g total	33–46 nC - Low gate drive power requirement; compatible with standard 1 A peak gate drivers
E_AS	210 mJ @ T_J = 25 °C - Absorbs unclamped inductive energy during startup/fault without failure
dv/dt capability	4.5 V/ns - Immune to false triggering in high-noise bridge-leg or flyback transformer environments
V_GS(th)	3.0–4.5 V - Ensures clean turn-on margin above typical gate driver dropout, avoiding partial enhancement

Pinout & Package

I²PAK (TO-262) package: insulated case, single-row 3-pin outline with integral heatsink tab (pin 2). Mounting surface is electrically connected to drain (D).

Pin/Terminal	Circuit Role	Design Meaning
D (Tab, Pin 2)	Drain	High-voltage power path; tab serves as primary thermal interface and must be isolated from chassis ground unless referenced to HV rail
G (Pin 1)	Gate	Control input; Zener-protected to ±30 V; requires <100 Ω series resistance to limit ringing and gate charge current
S (Pin 3)	Source	Power return node; referenced to driver ground; carries full load current and diode reverse recovery charge

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS = 210 mJ performance across production lot-no screening waivers
Zener-protected gate	Integrated 30 V bidirectional Zener clamps transients exceeding V_GS rating, eliminating external TVS in most designs
SuperMESH technology	Reduces R_DS(on) by ~25% vs. prior PowerMESH while maintaining >4.5 V/ns dv/dt immunity
Low C_iss/C_rss ratio	C_iss = 905 pF, C_rss = 25 pF → Miller gain < 0.03, minimizing voltage-dependent gate oscillation risk
ECOPACK® compliant	Meets RoHS and halogen-free requirements per ST's Grade 3 environmental specification

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter Leg

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating in continuous conduction mode (CCM) PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: Main switch in boost PFC stage; handles 6 A RMS input current at 100 kHz switching frequency.

Use Value: 1.2 Ω R_DS(on) limits conduction loss to ≤0.8 W at full load, reducing heatsink volume by 35% vs. legacy 2 Ω devices.

Use Scenario: 3-phase inverter driving 0.75 kW induction motor in variable-frequency drive (VFD) with 16 kHz PWM carrier.

IC Role / Device Role / Timing Role: Upper-leg switch in one inverter phase leg; subjected to 400 V DC bus and fast dv/dt from complementary switching.

Use Value: 4.5 V/ns dv/dt rating prevents spurious turn-on during shoot-through events, eliminating need for negative gate bias.

LED Streetlight Driver

Appliance AC-DC Adapter

Use Scenario: Isolated flyback LED driver powering 150 W streetlight array with universal AC input and active PFC.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant (QR) flyback topology; operates in boundary conduction mode (BCM) with variable frequency.

Use Value: 210 mJ E_AS withstands reflected output overvoltage spikes during LED string open-circuit faults without latch-up.

Use Scenario: Compact 65 W laptop adapter using active clamp forward or LLC topology with high-density PCB layout.

IC Role / Device Role / Timing Role: High-side switch in primary power stage; mounted directly to aluminum heat spreader on secondary side.

Use Value: 1.14 °C/W R_thJC enables junction temperature rise of only 25 °C at 6 A, allowing 100% derating margin at 50 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60Z	Same die, TO-220 package; R_thJC = 4.2 °C/W vs. 1.14 °C/W; P_TOT = 30 W vs. 110 W	Lower power density; requires larger heatsink; unsuitable for space-constrained 6 A designs	Select when mechanical compatibility with legacy TO-220 footprints is mandatory and thermal budget allows 3× higher R_thJC
FQP6N60	600 V, 1.5 Ω R_DS(on), 6 A; no Zener gate protection; E_AS = 120 mJ; C_iss = 1050 pF	Lacks integrated gate Zener; lower avalanche ruggedness; higher gate charge (42 nC)	Acceptable where cost sensitivity outweighs reliability requirements and external gate protection is added

Compared with STP6NK60Z and FQP6N60, STB6NK60Z-1 provides superior thermal performance (1.14 °C/W), guaranteed avalanche robustness (210 mJ), and integrated gate protection-making it optimal for high-reliability, high-power-density industrial and server applications where field failure risk must be minimized.

Availability

STB6NK60Z-1 is available at Aetrix Electronics and suitable for server PSUs, industrial motor drives, LED streetlight drivers, and compact AC-DC adapters requiring stable component supply and long-term manufacturability.

Supply support for STB6NK60Z-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's SuperMESH Power MOSFET product line-engineered specifically for high-efficiency, high-reliability switching in 500–1000 V industrial and computing power supplies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB6NK60Z-1 supports 3.8 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS2754 Rev 9. This rating reflects thermal derating due to junction-to-case resistance (1.14 °C/W) and maximum junction temperature limit of 150 °C. Operation above this current requires forced-air cooling or reduced ambient temperature.

Does STB6NK60Z-1 require an external gate Zener diode?

No. The device integrates a bidirectional Zener diode between gate and source, rated for ±30 V, as confirmed in the "Features" section and Absolute Maximum Ratings table (V_GS = ±30 V). This eliminates the need for external gate protection in standard applications, though a small series resistor (≤100 Ω) is still recommended for ringing suppression.

How does the body diode performance compare to standard silicon diodes?

The intrinsic body diode has t_rr = 445 ns and Q_rr = 2.7 µC at T_J = 150 °C, ISD = 6 A, and di/dt = 100 A/µs. While slower than dedicated SiC Schottky diodes, its soft recovery characteristic minimizes EMI in hard-switched topologies-unlike fast-recovery diodes that generate high di/dt-induced noise.

Can STB6NK60Z-1 be used in synchronous rectification?

No. As a standard N-channel high-voltage MOSFET with non-optimized body diode and no dedicated synchronous control features (e.g., adaptive dead-time logic or integrated driver), it is not suitable for synchronous rectifier roles. Its design targets high-side switching in converters-not low-loss freewheeling paths where ultra-low V_SD and nanosecond t_rr are critical.

STB6NK60Z-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 905 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STB6NK60Z-1 FAQ

1.How can I place an order for STB6NK60Z-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB6NK60Z-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB6NK60Z-1 reliable?

The price and inventory of STB6NK60Z-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB6NK60Z-1 is usually 5 days.

3.What payment methods are accepted for STB6NK60Z-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB6NK60Z-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB6NK60Z-1?

STB6NK60Z-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB6NK60Z-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB6NK60Z-1?

For technical support, including STB6NK60Z-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB6NK60Z-1 requirements.

6.How does Aetrix verify that STB6NK60Z-1 is sourced from the original manufacturer or authorized distributors?

All STB6NK60Z-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB6NK60Z-1 meets industry standards.

7.What is the process for return or replacement of STB6NK60Z-1?

All STB6NK60Z-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB6NK60Z-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB6NK60Z-1 part is unused and in its original packaging.

Return procedure for STB6NK60Z-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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