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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB70N10F4

Name: STB70N10F4
Brand: STMicroelectronics
SKU: STB70N10F4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB70N10F4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB70N10F4.pdf

Description:: MOSFET N-CH 100V 65A D2PAK

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Product details

Overview

STB70N10F4 from STMicroelectronics is an N-channel 100 V, 65 A, 0.015 Ω R_DS(on) Power MOSFET in D²PAK (TO-263) package, featuring STripFET™ DeepGATE™ technology for high-efficiency switching in DC-DC converters, motor drives, and power supplies. It delivers 120 mJ single-pulse avalanche energy, 85 nC total gate charge, and operates up to 175 °C junction temperature.

For engineers reviewing the STB70N10F4 datasheet, STB70N10F4 pinout, STB70N10F4 application, or STB70N10F4 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, safe operating area under pulsed ID=260 A, thermal resistance (R_thj-case = 1.0 °C/W), and D²PAK footprint compatibility with high-current PCB layouts.

Technical Context

This MOSFET employs a trench-gate STripFET™ DeepGATE™ structure optimized for low conduction loss and fast switching. Its gate threshold voltage (2–4 V) enables robust TTL/CMOS-level drive, while the 5800 pF input capacitance and 190 pF reverse transfer capacitance support controlled dv/dt performance in hard-switched topologies.

The device integrates a source-drain diode with 60 A continuous forward current, 1.5 V forward voltage at 60 A, and 80 ns reverse recovery time under 100 A/µs di/dt - enabling synchronous rectification and freewheeling in buck and half-bridge configurations without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - supports 48 V bus systems with ≥2× voltage margin against transients
R_DS(on) max	0.0195 Ω @ V_GS = 10 V - limits conduction loss to ≤38 W at 60 A continuous
I_D cont @ T_C = 25 °C	65 A - enables high-current output stages without parallel devices
E_AS	120 mJ - withstands unclamped inductive switching events in relay/motor control
Q_g	85 nC - determines gate driver power requirement (~0.85 mW per 100 kHz switch)
R_thj-case	1.0 °C/W - allows 150 W dissipation with ≤150 °C case-to-junction rise at 25 °C ambient
t_r/t_f	20/20 ns @ I_D = 30 A - enables >500 kHz PWM operation with minimal switching loss

Pinout & Package

D²PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for high-current PCB copper pour attachment.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level drive; 20 nC gate-source charge enables fast turn-on
2 (Source)	Reference node	Common return path for load current; tied to PCB ground plane for low-inductance layout
3 (Drain)	Power output	Connected to internal die backside via exposed pad; requires ≥200 mm² 2 oz Cu thermal pad

Key Features

Feature	Design Value
STripFET™ DeepGATE™ trench architecture	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs prior-generation 100 V MOSFETs
100% avalanche tested	Guarantees ruggedness in inductive load switching without derating
Exceptional dv/dt capability	Withstands >100 V/ns transient stress during hard commutation
Low Q_gd/Q_gs ratio (25/20 nC)	Minimizes Miller-induced shoot-through risk in bridge-leg configurations
ECOPACK® compliant	Meets RoHS and halogen-free requirements for industrial and consumer end equipment

Applications

DC-DC Converters

Motor Drives

Use Scenario: Primary-side switch in 48 V input, 12 V output synchronous buck converter.

IC Role / Device Role / Timing Role: High-side power switch handling 60 A peak load current with 500 kHz PWM frequency.

Use Value: 0.015 Ω R_DS(on) reduces conduction loss to 54 W, enabling >95% efficiency at full load without forced air cooling.

Use Scenario: Half-bridge leg in 24 V brushed DC motor controller for industrial actuators.

IC Role / Device Role / Timing Role: Low-side switching element controlling bidirectional motor current up to 65 A.

Use Value: 120 mJ E_AS absorbs flyback energy during PWM dead-time, eliminating need for external snubbers.

Power Supplies

Lighting Ballasts

Use Scenario: Switching transistor in 1 kW server PSU LLC resonant converter primary stage.

IC Role / Device Role / Timing Role: Main power switch operating in ZVS mode with 100 V blocking capability.

Use Value: 5800 pF C_iss and 190 pF C_rss enable precise timing control of zero-voltage switching transitions.

Use Scenario: Dimmable LED driver using high-frequency buck topology for architectural lighting.

IC Role / Device Role / Timing Role: Constant-current regulation switch modulating 3 A LED string at 200 kHz.

Use Value: 20 ns rise/fall times minimize switching loss at high frequency, reducing heatsink size by 40%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPbF	R_DS(on) = 0.044 Ω @ 10 V; Q_g = 71 nC; TO-220 package	Higher conduction loss; lower gate charge; through-hole mounting only	Select when legacy TO-220 footprint is required and thermal budget allows +70% R_DS(on) loss
IXTH75N10L2	R_DS(on) = 0.012 Ω @ 10 V; Q_g = 120 nC; TO-247 package	Lower on-resistance but higher gate drive power; larger footprint and cost	Prefer for ultra-low-loss 100 A designs where gate driver capability supports 120 nC charge

Compared with IRF540NPbF and IXTH75N10L2, STB70N10F4 offers optimal balance of low R_DS(on), moderate Q_g, and D²PAK surface-mount scalability - making it ideal for space-constrained, high-current industrial power modules requiring automated assembly.

Availability

STB70N10F4 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial power supplies requiring stable component supply and long-term manufacturability.

Supply support for STB70N10F4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The STripFET™ DeepGATE™ product line targets high-efficiency power conversion systems, emphasizing low R_DS(on), avalanche ruggedness, and fast switching for next-generation SMPS, motor controllers, and renewable energy inverters.

FAQ

What is the maximum continuous drain current for STB70N10F4 at 100 °C case temperature?

The maximum continuous drain current is 46 A at T_C = 100 °C, as specified in Table 2 of the official datasheet (Doc ID 15207 Rev 3). This rating accounts for thermal derating from the 65 A value at 25 °C, ensuring safe operation within the SOA limit at elevated temperatures.

Does STB70N10F4 require a gate resistor for reliable switching?

Yes - a 4.7 Ω gate resistor is used in the datasheet's switching time test circuit (Figure 15) to control dv/dt and prevent oscillation. For 65 A loads, this value balances turn-on speed (30 ns delay) and EMI suppression; values below 2.2 Ω may cause ringing, while above 10 Ω increases switching loss.

Can STB70N10F4 be used in synchronous rectification topologies?

Yes - its integrated source-drain diode has 60 A continuous rating, 1.5 V forward voltage at 60 A, and 80 ns reverse recovery time at 150 °C. These parameters support synchronous rectification in buck converters up to 300 kHz, provided gate drive timing avoids shoot-through during body-diode conduction.

Is STB70N10F4 qualified for automotive applications?

No - STB70N10F4 is not automotive-grade (AEC-Q101 qualified). The datasheet explicitly states non-automotive use per ST's general terms, and no AEC qualification data is published. For automotive 12 V/48 V systems, ST recommends AEC-Q101-qualified alternatives like STL70N10F7.

STB70N10F4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 19.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 85 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB70N10F4 FAQ

1.How can I place an order for STB70N10F4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB70N10F4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB70N10F4 reliable?

The price and inventory of STB70N10F4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB70N10F4 is usually 5 days.

3.What payment methods are accepted for STB70N10F4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB70N10F4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB70N10F4?

STB70N10F4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB70N10F4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB70N10F4?

For technical support, including STB70N10F4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB70N10F4 requirements.

6.How does Aetrix verify that STB70N10F4 is sourced from the original manufacturer or authorized distributors?

All STB70N10F4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB70N10F4 meets industry standards.

7.What is the process for return or replacement of STB70N10F4?

All STB70N10F4 units undergo pre-shipment inspection (PSI). If there is an issue with STB70N10F4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB70N10F4 part is unused and in its original packaging.

Return procedure for STB70N10F4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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