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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB70NH03LT4

Name: STB70NH03LT4
Brand: STMicroelectronics
SKU: STB70NH03LT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB70NH03LT4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB70NH03LT4.pdf

Description:: MOSFET N-CH 30V 60A D2PAK

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Product details

Overview

STB70NH03LT4 from STMicroelectronics is an N-channel 30V, 0.0075Ω R_DS(on), 60A D²PAK Power MOSFET optimized for high-current synchronous buck DC-DC converters. It features low threshold voltage (1V), third-quadrant gate charge of 15nC, and 300mJ single-pulse avalanche energy-enabling efficient operation in server VRMs and telecom power supplies.

For engineers reviewing the STB70NH03LT4 datasheet, STB70NH03LT4 pinout, STB70NH03LT4 application, or STB70NH03LT4 equivalent, key selection criteria include its 1.87°C/W junction-to-case thermal resistance, 2200pF input capacitance, 15.7nC total gate charge at V_GS=5V, and suitability as a low-side switch in high-frequency (<1MHz) point-of-load regulators.

Technical Context

This MOSFET employs ST's STripFET™ III process to achieve industry-benchmark R_DS(on) × Q_g product (≈118 mΩ·nC), enabling reduced conduction and switching losses simultaneously. Its 1V gate threshold supports direct drive from 3.3V logic controllers without level-shifting.

The device integrates a robust body diode with 32ns reverse recovery time and 51nC Q_rr, critical for minimizing shoot-through risk and dead-time losses in synchronous rectification. Thermal design is enabled by its 858W P_TOT rating at T_C=25°C and low R_thJC.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V maximum drain-source voltage - defines safe operating range in 12V/24V input DC-DC stages
R_DS(on)	0.0075Ω @ V_GS=10V, I_D=30A - enables <1.7W conduction loss at 60A continuous current
I_D (cont)	60A @ T_C=25°C - supports high-output-current VRMs without parallel devices
Q_g	15.7nC @ V_GS=5V - determines gate driver current requirement (~1.6A peak for 100ns turn-on)
R_thJC	1.87°C/W - allows junction temperature rise of ≤115°C under 858W dissipation with proper heatsinking
E_AS	300mJ single-pulse avalanche energy - provides ruggedness against inductive switching transients
Q_rr	51nC - directly impacts turn-on loss of high-side FET during synchronous rectification

Pinout & Package

Package: D²PAK (TO-263AB), surface-mount, thermally enhanced with exposed drain pad. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate control terminal	Receives PWM signal; 1V threshold enables 3.3V logic compatibility; 1.5Ω gate resistance affects drive loop stability
Pin 2 (D)	Drain connection / thermal pad	Electrically and thermally connected to metal tab; must be soldered to PCB copper pour for thermal management
Pin 3 (S)	Source return path	Serves as reference for gate drive; low-inductance layout critical to minimize V_GS ringing during fast switching

Key Features

Feature	Design Value
STripFET™ III process	Enables 0.0075Ω R_DS(on) in D²PAK - reduces conduction loss by ~25% vs prior-generation 30V MOSFETs
Low V_GS(th)	1V typical threshold - eliminates need for gate driver bootstrapping in low-voltage control ICs
Third-quadrant Q_gls	15nC - minimizes gate loss during body-diode conduction phase in synchronous buck operation
Robust body diode	32ns t_rr, 51nC Q_rr - reduces cross-conduction risk and high-side FET turn-on loss
ECOPACK® compliance	Lead-free second-level interconnect - meets RoHS and JEDEC JESD97 environmental requirements

Applications

Server Voltage Regulator Modules

Telecom DC-DC Converters

Use Scenario: 48V-to-12V intermediate bus conversion feeding multi-phase CPU VRMs in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 500kHz–1MHz multiphase buck converter.

Use Value: 0.0075Ω R_DS(on) limits conduction loss to <2.7W at 60A, enabling >95% efficiency at full load.

Use Scenario: 48V input, 3.3V/50A output DC-DC module for base station power distribution.

IC Role / Device Role / Timing Role: Primary low-side switch in isolated forward or non-isolated buck converter.

Use Value: 300mJ E_AS withstands transient overloads during hot-swap events without failure.

Industrial PLC Power Supplies

Automotive ADAS ECUs

Use Scenario: 24V input, 5V/20A auxiliary supply in programmable logic controller backplane.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in flyback or LLC resonant converter.

Use Value: 1.87°C/W R_thJC enables operation up to 100°C ambient with minimal heatsink area.

Use Scenario: 12V-to-3.3V point-of-load regulator powering radar sensor SoCs in automotive ADAS modules.

IC Role / Device Role / Timing Role: Low-side switch in compact, high-density buck converter operating at 2MHz.

Use Value: 15.7nC Q_g at 5V gate drive supports fast switching with standard 2A gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side synchronous rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.0085Ω @ 10V; Q_g = 19nC; TO-252 package	Higher R_thJA (62.5°C/W vs 1.87°C/W) limits power density in high-current designs	Preferred for space-constrained PCBs where thermal performance is secondary to footprint size
IXTP75N04T	R_DS(on) = 0.0045Ω @ 10V; Q_g = 28nC; TO-220 package	Higher gate charge increases driver loss; larger through-hole package impedes automated assembly	Selected when ultra-low R_DS(on) justifies higher gate drive complexity and manual assembly cost

Compared with IRF7470PBF and IXTP75N04T, STB70NH03LT4 delivers optimal balance of low R_DS(on), moderate Q_g, and superior thermal performance in surface-mount form-making it ideal for high-efficiency, high-power-density DC-DC converters requiring automated manufacturing.

Availability

STB70NH03LT4 is available at Aetrix Electronics and suitable for server VRMs, telecom power supplies, and industrial PLC power modules requiring stable component supply and long-term production continuity.

Supply support for STB70NH03LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing and communications infrastructure.

FAQ

Is STB70NH03LT4 suitable for high-frequency (>1MHz) switching applications?

Yes. With 2200pF C_iss, 380pF C_oss, and 15.7nC Q_g at 5V, it supports efficient operation up to 2MHz in well-designed layouts. Its low C_oss/C_iss ratio improves hard-switching efficiency, and third-quadrant Q_gls of 15nC ensures predictable body-diode commutation behavior.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies I_D = 43A at T_C = 100°C. This derating reflects thermal limitations-not silicon capability-and assumes proper PCB copper area (≥10cm² 2oz Cu) under the exposed drain pad to maintain R_thJC ≤1.87°C/W.

Does STB70NH03LT4 require a gate resistor for stability?

A series gate resistor (typically 2.2–4.7Ω) is recommended to dampen parasitic oscillation caused by gate loop inductance and C_iss. The device's 1.5Ω intrinsic gate resistance helps but does not eliminate need for external damping in high-dI/dt applications like multiphase VRMs.

Can STB70NH03LT4 replace obsolete STB70NH03L in existing designs?

Yes. STB70NH03LT4 is the tape-and-reel packaged version of STB70NH03L, sharing identical electrical specifications, pinout, and thermal characteristics. The "T4" suffix denotes packaging only; no circuit redesign or layout modification is required for drop-in replacement.

STB70NH03LT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 858W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB70NH03LT4 FAQ

1.How can I place an order for STB70NH03LT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB70NH03LT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB70NH03LT4 reliable?

The price and inventory of STB70NH03LT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB70NH03LT4 is usually 5 days.

3.What payment methods are accepted for STB70NH03LT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB70NH03LT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB70NH03LT4?

STB70NH03LT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB70NH03LT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB70NH03LT4?

For technical support, including STB70NH03LT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB70NH03LT4 requirements.

6.How does Aetrix verify that STB70NH03LT4 is sourced from the original manufacturer or authorized distributors?

All STB70NH03LT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB70NH03LT4 meets industry standards.

7.What is the process for return or replacement of STB70NH03LT4?

All STB70NH03LT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB70NH03LT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB70NH03LT4 part is unused and in its original packaging.

Return procedure for STB70NH03LT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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