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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB75NH02LT4

Name: STB75NH02LT4
Brand: STMicroelectronics
SKU: STB75NH02LT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB75NH02LT4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB75NH02LT4.pdf

Description:: MOSFET N-CH 24V 60A D2PAK

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Product details

Overview

STB75NH02LT4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D²PAK (TO-263) package, rated for 24 V V_DS, 60 A continuous drain current at T_C = 25°C, and 0.0062 Ω R_DS(on) at V_GS = 10 V. It features STripFET™ III technology optimized for high-efficiency DC-DC converters, low gate charge (17 nC), and robust avalanche capability (360 mJ). Used in synchronous rectification and high-current switching stages.

For engineers reviewing the STB75NH02LT4 datasheet, STB75NH02LT4 pinout, STB75NH02LT4 application, or STB75NH02LT4 equivalent, key selection criteria include conduction loss minimization at 30–60 A loads, fast switching with <200 ns rise time, thermal performance under forced-air cooling, and compatibility with 5 V gate drive in half-bridge configurations.

Technical Context

This MOSFET employs ST's STripFET™ III trench-gate process to achieve ultra-low R_DS(on) × Q_g product-critical for minimizing both conduction and switching losses in high-frequency buck converters. Its 1.88 °C/W R_thJC enables high power density when mounted on copper-clad PCBs with thermal vias.

The device supports gate drive voltages from 1 V to 20 V, with a typical V_GS(th) of 1.4 V (min 1 V), enabling direct interfacing with 3.3 V logic controllers. Its integrated body diode exhibits 36 ns reverse recovery time and 35 µC Q_rr, suitable for synchronous rectification without external Schottky replacement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	24 V - Maximum blocking voltage in DC-DC primary/secondary side; compatible with 24 V bus systems and 12 V input boost stages.
R_DS(on) @ V_GS=10 V	0.0062 Ω - Enables ≤2.2 W conduction loss at 60 A, reducing heatsink requirements in 50–200 kHz converters.
Q_g	17 nC - Low total gate charge allows full turn-on with ≤1 A peak gate driver current, easing gate driver IC selection.
t_r/t_f	200 ns / 25 ns - Fast switching supports >500 kHz operation while limiting overlap loss in hard-switched topologies.
E_AS	360 mJ - Single-pulse avalanche rating permits unclamped inductive switching in motor gate drivers or relay snubbers.
R_thJC	1.88 °C/W - Junction-to-case thermal resistance enables 80 W dissipation with ≤150°C junction rise over 25°C case temperature.

Pinout & Package

Package: D²PAK (TO-263), surface-mount, single-ended heat sink interface with exposed drain pad. Dimensions per ST mechanical drawing: 10.4 mm × 15.85 mm × 4.6 mm (L × W × H), lead-free ECOPACK® compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects directly to ground plane or source return path; carries full load current.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <100 nA leakage; driven via series resistor (e.g., 4.7 Ω) to damp ringing.
Pin 3 (Drain)	Power output (D)	Exposed metal pad on underside - electrically connected to drain; must be soldered to large copper pour for thermal and electrical conduction.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	Industry benchmark for efficiency in 24 V, 50–100 A DC-DC stages; reduces combined conduction + switching loss by ≥18% vs. prior-gen D²PAK MOSFETs.
Enhanced avalanche ruggedness	360 mJ E_AS at T_J = 25°C - eliminates need for external clamping in flyback or inductive load switching where energy recovery is uncontrolled.
Low threshold voltage	V_GS(th) = 1.0–1.8 V - enables direct drive from microcontroller GPIOs or low-voltage PWM controllers without level-shifting.
Optimized body diode	t_rr = 36 ns, Q_rr = 35 µC - minimizes reverse recovery loss in synchronous rectifier mode, improving light-load efficiency.

Applications

Server VRM Output Stage

Industrial DC-DC Converter

Use Scenario: High-current point-of-load regulation in 1U server motherboards delivering 50–80 A at 1.2 V.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switched at 300–600 kHz.

Use Value: 0.0062 Ω R_DS(on) limits I²R loss to <2.3 W at 80 A, enabling compact thermal design without active cooling.

Use Scenario: 24 V input to 5 V/12 V isolated DC-DC module for PLC I/O modules and sensor interfaces.

IC Role / Device Role / Timing Role: Primary-side switch in non-isolated buck regulator; gate-driven by UC3843-based controller.

Use Value: 17 nC Q_g ensures minimal gate drive power (<15 mW at 500 kHz), extending controller lifetime and simplifying bias supply.

Automotive Body Control Module

Telecom Rectifier Board

Use Scenario: High-side load switch for headlight or HVAC blower control in 24 V commercial vehicle BCMs.

IC Role / Device Role / Timing Role: N-channel high-side switch with charge pump gate driver; operated in on/off mode (not PWM).

Use Value: 60 A ID rating and 30 V V_spike rating tolerate load dump transients up to 28 V, meeting ISO 7637-2 Pulse 5a requirements.

Use Scenario: OR-ing FET in -48 V telecom rectifier shelf with hot-swap and redundancy support.

IC Role / Device Role / Timing Role: Reverse-polarity protection and current-sharing MOSFET in parallel rectifier strings.

Use Value: 0.008 Ω R_DS(on) at V_GS = 5 V ensures <19 mV drop at 25 A, minimizing voltage imbalance between paralleled units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404ZPBF	R_DS(on) = 0.004 Ω @ 10 V but Q_g = 205 nC; TO-220 package; higher switching loss.	Better conduction loss but unsuitable for >100 kHz due to excessive gate charge and slower t_r/t_f.	Prefer for low-frequency, high-current linear switching; avoid in high-frequency SMPS.
STB80NF55-08	V_DS = 55 V, R_DS(on) = 0.008 Ω @ 10 V, Q_g = 120 nC; same D²PAK package.	Higher voltage rating trades off conduction efficiency; requires larger gate driver for same speed.	Select only if system requires >30 V transient tolerance; otherwise incurs unnecessary R_DS(on) penalty.

Compared with IRF1404ZPBF and STB80NF55-08, STB75NH02LT4 uniquely balances low R_DS(on), low Q_g, and D²PAK thermal performance for 24 V, 300–600 kHz DC-DC designs-making it optimal for space-constrained, high-efficiency power stages where both conduction and switching losses must be minimized simultaneously.

Availability

STB75NH02LT4 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for STB75NH02LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and MEMS products for industrial, automotive, and consumer markets.

STB75NH02LT4 belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing, telecom, and industrial power supplies.

FAQ

Is STB75NH02LT4 RoHS-compliant and lead-free?

Yes. STB75NH02LT4 is manufactured in ST's ECOPACK®-compliant D²PAK package with lead-free second-level interconnects, meeting RoHS Directive 2011/65/EU and JEDEC JESD97 standards. The inner box label explicitly marks the lead-free status.

What is the maximum safe operating frequency for STB75NH02LT4 in a buck converter?

Based on its 200 ns rise time and 25 ns fall time with 4.7 Ω gate resistor, STB75NH02LT4 supports reliable operation up to 600 kHz in hard-switched buck topologies. Above this, gate drive strength and PCB layout parasitics become dominant loss factors.

Can STB75NH02LT4 be used in linear mode (e.g., electronic load)?

No. Its Safe Operating Area (SOA) curve shows limited DC capability beyond 10 A at V_DS > 10 V. Linear operation risks thermal runaway due to positive temperature coefficient of R_DS(on); it is specified only for switching applications.

Does STB75NH02LT4 require a gate resistor, and what value is recommended?

Yes. A 4.7 Ω series gate resistor is recommended per ST's test circuit (Figure 15) to limit peak gate current, suppress oscillation, and control dV/dt. Lower values increase switching speed but risk ringing; higher values degrade efficiency and increase t_r/t_f.

STB75NH02LT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 24 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2050 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 80W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB75NH02LT4 FAQ

1.How can I place an order for STB75NH02LT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB75NH02LT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB75NH02LT4 reliable?

The price and inventory of STB75NH02LT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB75NH02LT4 is usually 5 days.

3.What payment methods are accepted for STB75NH02LT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB75NH02LT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB75NH02LT4?

STB75NH02LT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB75NH02LT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB75NH02LT4?

For technical support, including STB75NH02LT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB75NH02LT4 requirements.

6.How does Aetrix verify that STB75NH02LT4 is sourced from the original manufacturer or authorized distributors?

All STB75NH02LT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB75NH02LT4 meets industry standards.

7.What is the process for return or replacement of STB75NH02LT4?

All STB75NH02LT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB75NH02LT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB75NH02LT4 part is unused and in its original packaging.

Return procedure for STB75NH02LT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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