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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD10N60M6

Name: STD10N60M6
Brand: STMicroelectronics
SKU: STD10N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD10N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD10N60M6.pdf

Description:: MOSFET N-CH 600V 6.4A DPAK

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Product details

Overview

STD10N60M6 from STMicroelectronics is an N-channel 600 V, 520 mΩ typ. (600 mΩ max), 6.4 A MDmesh M6 superjunction Power MOSFET in DPAK (TO-252) package. It serves as a high-voltage switching device in resonant and hard-switched topologies, featuring 100% avalanche tested ruggedness, Zener-protected gate, and low gate input resistance. Used in LLC converters, boost PFC stages, and industrial SMPS.

For engineers reviewing the STD10N60M6 datasheet, STD10N60M6 pinout, STD10N60M6 application, or STD10N60M6 equivalent, key selection criteria include R_DS(on) at 10 V drive, 155 ns diode t_rr at 25 °C, 100 V/ns MOSFET dv/dt ruggedness, and thermal resistance of 2.08 °C/W junction-to-case - all critical for high-efficiency, high-reliability power conversion designs.

Technical Context

This MOSFET employs ST's MDmesh M6 technology, delivering improved R_DS(on)/area over prior generations while maintaining excellent switching behavior. Its 600 V V_(BR)DSS, 15 V/ns diode recovery dv/dt rating, and 100 V/ns MOSFET dv/dt ruggedness enable robust operation in fast-switching resonant converters.

The device integrates a Zener-protected gate structure and exhibits low intrinsic gate resistance (7 Ω), supporting clean turn-on/turn-off with minimal external gate drive complexity. Its 120 mJ single-pulse avalanche energy (E_AS) and 1.4 A repetitive avalanche current confirm design margin for unclamped inductive switching events.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - Withstands 600 V drain-source blocking voltage before breakdown, enabling use in 400 V AC-input PFC and 380 V DC-link applications.
R_DS(on) max	600 mΩ @ V_GS = 10 V, I_D = 3.2 A - Defines conduction loss ceiling at rated current; typ. 520 mΩ improves efficiency in continuous conduction mode.
Q_g	8.8 nC - Total gate charge determines driver power requirement and switching speed; enables <10 ns rise/fall times with 4.7 Ω gate resistor.
t_r/t_f	8 ns / 10 ns - Fast switching transitions reduce overlap losses; supports >300 kHz operation in LLC and PFC stages.
R_thj-case	2.08 °C/W - Junction-to-case thermal resistance allows 60 W dissipation at T_C = 25 °C; requires adequate heatsinking for >4 A continuous operation.
E_AS	120 mJ - Single-pulse avalanche energy rating ensures survivability during transient overvoltage events without external snubbers.
t_rr	155 ns @ T_j = 25 °C - Reverse recovery time of integrated body diode impacts commutation loss and EMI in synchronous rectification and half-bridge configurations.

Pinout & Package

DPAK (TO-252) package with exposed drain tab (pin 2) for enhanced thermal performance and electrical connection. Standard 3-pin surface-mount outline with gull-wing leads.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 10 V logic-level drive; Zener-protected to ±25 V; 7 Ω intrinsic resistance shapes gate waveform.
2 (D, TAB)	Drain (exposed metal tab)	Main high-side power path; electrically and thermally connected to PCB copper pour; carries full load current and dissipates heat.
3 (S)	Source	Reference node for gate drive and current sensing; connects to power ground or low-side switch source in bridge configurations.

Key Features

Feature	Design Value
MDmesh M6 silicon technology	Delivers 23% lower R_DS(on) per die area vs. MDmesh M5, enabling smaller footprint or higher current density in same package.
100% avalanche tested	Each unit validated for single-pulse avalanche capability up to 120 mJ, eliminating need for derating in inductive switching circuits.
Zener-protected gate	Integrated gate-body Zener clamps transients to ±25 V, preventing gate oxide damage during layout parasitic coupling or hot-swap events.
Low Q_gd/Q_gs ratio	4.8 nC / 2.7 nC ≈ 1.78 - Reduces Miller effect, improving noise immunity and enabling stable operation at high dv/dt (100 V/ns).
Optimized C_oss eq.	59 pF (0–480 V) - Low effective output capacitance minimizes turn-off energy loss and improves light-load efficiency in resonant topologies.

Applications

LLC Resonant Converter

Boost PFC Stage

Use Scenario: Primary-side switch in 300–500 W server PSU LLC half-bridge with 380 V DC bus and 300–700 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side switching element; handles zero-voltage switching (ZVS) transitions; body diode conducts during dead-time.

Use Value: 155 ns t_rr and low C_oss eq. (59 pF) minimize dead-time loss and improve ZVS range across line/load conditions.

Use Scenario: Switching transistor in continuous conduction mode (CCM) boost PFC for 85–265 V AC input, 380 V DC output, 1–2 kW.

IC Role / Device Role / Timing Role: Main power switch; operates at 65–100 kHz with duty cycle modulation; withstands 600 V peak reverse voltage.

Use Value: 600 V V_(BR)DSS and 100 V/ns dv/dt ruggedness ensure reliable operation during line surges and inrush events.

Industrial SMPS

UPS Inverter Stage

Use Scenario: Primary switch in 1–3 kW telecom rectifier with wide input range (180–305 V AC) and forced-air cooling.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward or flyback topology; conducts 6.4 A continuous at T_C = 25 °C.

Use Value: 2.08 °C/W R_thj-case and 60 W P_TOT allow compact heatsink design; 120 mJ E_AS prevents failure during output short-circuit recovery.

Use Scenario: Half-bridge switch in online UPS inverter driving 230 V AC output from 400 V DC bus, operating at 16–20 kHz.

IC Role / Device Role / Timing Role: Low-loss switching device; body diode provides freewheeling path during PWM dead-time; must survive bidirectional current.

Use Value: 6.4 A I_SD and 16.6 A I_SDM support peak overload currents; 1.6 V V_SD limits conduction loss during freewheeling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK60ZFP	600 V, 650 mΩ max, 10 A, TO-220 package; Zener-protected but higher R_DS(on) and no M6 optimization.	Larger through-hole package; higher thermal resistance (1.5 °C/W case-to-heatsink only); not optimized for >200 kHz.	Select when board space permits TO-220 mounting and cost sensitivity outweighs switching loss reduction.
FDPF10N60NZ	600 V, 650 mΩ max, 10 A, TO-220FP; lower Q_g (7.2 nC) but higher t_rr (220 ns) and no avalanche rating.	Higher diode recovery loss; unsuitable for ZVS or high-di/dt resonant circuits requiring rugged body diode.	Prefer only in fixed-frequency hard-switched applications where diode recovery is non-critical and gate drive is highly constrained.

Compared with STP10NK60ZFP and FDPF10N60NZ, STD10N60M6 offers superior R_DS(on)/area, lower E_AS-normalized switching loss, and verified 100% avalanche testing - making it the optimal choice for high-frequency, high-reliability PFC and resonant converter designs where thermal and electrical margin are tightly coupled.

Availability

STD10N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, boost PFC stages, and industrial SMPS requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for STD10N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STD10N60M6 belongs to the MDmesh M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency AC-DC and DC-DC power conversion where low conduction and switching losses are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD10N60M6 supports 4 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS13010 Rev 3. This derating reflects thermal limitations of the DPAK package and must be respected in thermally constrained layouts without forced airflow or large copper areas.

Does this MOSFET require a negative gate turn-off voltage?

No. STD10N60M6 operates with 0 V to +10 V gate drive; its gate threshold voltage (V_GS(th)) ranges from 3.25 V to 4.75 V, and it is fully enhanced at V_GS = 10 V. A negative turn-off voltage is unnecessary and not recommended due to Zener protection limits of ±25 V.

Can the body diode be used for synchronous rectification?

The integrated body diode has t_rr = 155 ns at 25 °C and V_SD = 1.6 V at 6.4 A, making it usable for low-frequency freewheeling but not recommended for high-frequency synchronous rectification above 100 kHz due to recovery loss and lack of soft recovery characteristics.

Is the DPAK package lead-free and RoHS compliant?

Yes. STD10N60M6 is offered in ECOPACK2-compliant DPAK (TO-252) packaging, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device uses matte tin plating on leads and halogen-free molding compound, as confirmed in ST's ECOPACK documentation.

STD10N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.8 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 338 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

STD10N60M6 FAQ

1.How can I place an order for STD10N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD10N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD10N60M6 reliable?

The price and inventory of STD10N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD10N60M6 is usually 5 days.

3.What payment methods are accepted for STD10N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD10N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD10N60M6?

STD10N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD10N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD10N60M6?

For technical support, including STD10N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD10N60M6 requirements.

6.How does Aetrix verify that STD10N60M6 is sourced from the original manufacturer or authorized distributors?

All STD10N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD10N60M6 meets industry standards.

7.What is the process for return or replacement of STD10N60M6?

All STD10N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STD10N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD10N60M6 part is unused and in its original packaging.

Return procedure for STD10N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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