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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD10NM50N

Name: STD10NM50N
Brand: STMicroelectronics
SKU: STD10NM50N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD10NM50N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD10NM50N.pdf

Description:: MOSFET N-CH 500V 7A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD10NM50N from STMicroelectronics is an N-channel 500 V, 7 A MDmesh™ II Power MOSFET in DPAK (TO-252) package, featuring 0.53 Ω R_DS(on) at V_GS = 10 V, 100% avalanche tested, and optimized for high-efficiency switching converters in industrial power supplies and LED drivers.

For engineers reviewing the STD10NM50N datasheet, STD10NM50N pinout, STD10NM50N application, or STD10NM50N equivalent, key selection criteria include its 500 V V_DS, low 17 nC total gate charge, 450 pF input capacitance, 1.79 °C/W junction-to-case thermal resistance, and DPAK footprint compatibility with automated PCB assembly.

Technical Context

This device employs ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its 500 V breakdown voltage is rated at T_jmax = 150 °C, and it sustains repetitive unclamped inductive switching with 143 mJ single-pulse avalanche energy at T_j = 25 °C.

The MOSFET delivers fast switching performance: 7.8 ns turn-on delay, 12 ns fall time (V_DD = 250 V, I_D = 3.5 A, R_G = 4.7 Ω), and exhibits low diode reverse recovery charge (1.4 µC at T_j = 25 °C) - critical for reducing EMI and loss in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in offline SMPS up to 380 V DC bus with margin.
R_DS(on) max	0.63 Ω - ensures ≤ 15.5 W conduction loss at 7 A continuous drain current (T_C = 25 °C).
Q_g	17 nC - enables efficient gate drive with low-power controllers and reduces switching loss in 50–500 kHz converters.
C_iss	450 pF - contributes to stable high-frequency operation with minimal Miller-induced oscillation risk.
T_j max	150 °C - allows operation in thermally constrained enclosures without derating below full 7 A rating at T_C = 100 °C.
E_AS	143 mJ - provides robustness against transient overvoltage during inductive load switching without external snubbers.

Pinout & Package

DPAK (TO-252) package with exposed drain tab on underside for thermal and electrical connection; surface-mount compatible with standard reflow profiles and IPC-7351B footprint.

Pin/Terminal	Circuit Role	Design Meaning
1 (GATE)	Control terminal	Receives 10 V logic-level drive; 4.7 Ω gate input resistance minimizes ringing in high-dV/dt environments.
2 (DRAIN)	High-side power output	Connected to PCB copper pour via exposed tab; carries full load current and dissipates heat directly to board.
3 (SOURCE)	Reference/return path	Provides low-impedance return for gate drive loop and source current; critical for minimizing common-source inductance.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness in unclamped inductive switching events without parameter shift or failure.
Low Q_g/Q_gd ratio	Q_gd/Q_g ≈ 0.5 - improves controllability during Miller plateau and reduces risk of shoot-through in half-bridge configurations.
Low C_oss eq.	167 pF (0–400 V) - lowers capacitive switching loss and improves light-load efficiency in resonant converters.
MDmesh™ II silicon	Combines trench-gate vertical structure with optimized cell pitch to achieve best-in-class R_DS(on) × Q_g figure of merit (≈ 10.7 Ω·nC).

Applications

Industrial Switch-Mode Power Supplies

LED Constant-Current Drivers

Use Scenario: Primary-side switch in 60–150 W offline flyback or LLC resonant converters.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding.

Use Value: 0.53 Ω R_DS(on) and 17 nC Q_g enable >90% efficiency at 100 kHz while maintaining thermal headroom on 1-inch² FR-4 PCB.

Use Scenario: Secondary-side constant-current buck controller for high-bay LED luminaires (30–100 W).

IC Role / Device Role / Timing Role: Synchronous rectifier or PWM-controlled current sink in isolated DC-DC stage.

Use Value: 1.3 V forward diode voltage and 177 ns reverse recovery time reduce conduction loss and improve dimming linearity vs. standard Schottky alternatives.

AC-DC Adapters

Motor Drive Half-Bridge Stages

Use Scenario: Main switch in universal-input (90–264 V AC) 36 W adapter with active PFC front-end.

IC Role / Device Role / Timing Role: DC-link switch handling rectified mains voltage in boost PFC or flyback topology.

Use Value: 500 V V_DS rating accommodates 400 V DC link with 25% safety margin; 150 °C T_j max supports compact enclosure designs.

Use Scenario: Low-side switch in 24–48 V BLDC motor gate driver stage for HVAC blowers or power tools.

IC Role / Device Role / Timing Role: Fast-switching power element in half-bridge leg driving motor phase windings.

Use Value: 12 ns fall time and 1.4 µC Q_rr minimize dead-time loss and commutation spikes, enabling clean 20 kHz PWM operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 500 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NM50N	Same silicon die, TO-220 package; R_thj-case = 5 °C/W vs. 1.79 °C/W for DPAK.	Requires heatsink mounting; unsuitable for space-constrained SMT-only designs.	Select when mechanical mounting flexibility and higher peak power dissipation (>25 W) are prioritized over board area.
FQP10N50CT	500 V, 10 A, R_DS(on) = 0.65 Ω; no avalanche rating; Q_g = 22 nC; TO-220 package only.	Lacks 100% avalanche testing and has higher gate charge - less robust in inductive switching.	Consider only in cost-sensitive, non-critical applications where surge immunity is not required.

Compared with STP10NM50N and FQP10N50CT, STD10NM50N offers superior thermal performance in SMT layouts, guaranteed avalanche capability for reliability-critical systems, and lower gate charge for high-frequency efficiency - making it optimal for compact, high-reliability industrial power stages.

Availability

STD10NM50N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, LED constant-current drivers, AC-DC adapters, and motor drive half-bridge stages requiring stable component supply and long-term production continuity.

Supply support for STD10NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

STD10NM50N belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications where low R_DS(on), low gate charge, and avalanche ruggedness are essential - especially in compact, thermally constrained power converters.

FAQ

What is the maximum continuous drain current for STD10NM50N at 100 °C case temperature?

The maximum continuous drain current is 5 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, ensuring safe operation within the SOA limits defined in Figure 2.

Does STD10NM50N require a gate resistor for stability in hard-switched applications?

Yes - a 4.7 Ω gate resistor is used in the official switching time test circuit (Figure 17). This value damps gate oscillation, controls dv/dt during turn-on, and prevents unintended turn-on from Miller coupling, especially critical given its 38 pF C_rss and 500 V blocking capability.

Can STD10NM50N be used in synchronous rectification topologies?

No - STD10NM50N is a standard N-channel enhancement-mode MOSFET with an integrated body diode, but it is not optimized for synchronous rectification. Its body diode reverse recovery time (177 ns) and Q_rr (1.4 µC) are higher than dedicated SR FETs, leading to excessive loss and noise in secondary-side rectification.

Is the DPAK package of STD10NM50N lead-free and RoHS-compliant?

Yes - the device is offered in ECOPACK®-compliant DPAK packaging, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The "ECOPACK®" designation confirms halogen-free molding compound and lead-free terminations per JEDEC J-STD-020 moisture sensitivity level 1.

STD10NM50N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 630mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 450 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD10NM50N FAQ

1.How can I place an order for STD10NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STD10NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD10NM50N reliable?

The price and inventory of STD10NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD10NM50N is usually 5 days.

3.What payment methods are accepted for STD10NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD10NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD10NM50N?

STD10NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD10NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD10NM50N?

For technical support, including STD10NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD10NM50N requirements.

6.How does Aetrix verify that STD10NM50N is sourced from the original manufacturer or authorized distributors?

All STD10NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD10NM50N meets industry standards.

7.What is the process for return or replacement of STD10NM50N?

All STD10NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STD10NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD10NM50N part is unused and in its original packaging.

Return procedure for STD10NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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