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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD10PF06T4

Name: STD10PF06T4
Brand: STMicroelectronics
SKU: STD10PF06T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD10PF06T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD10PF06T4.pdf

Description:: MOSFET P-CH 60V 10A DPAK

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Product details

Overview

STD10PF06T4 from STMicroelectronics is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for 60 V V_DSS, 10 A continuous drain current at T_C = 25 °C, and 0.18 Ω typical R_DS(on) at V_GS = −10 V. It features 100% avalanche tested ruggedness, 6 V/ns dv/dt capability, and low gate charge (16 nC), enabling robust switching in DC-DC converters and motor control stages.

For engineers reviewing the STD10PF06T4 datasheet, STD10PF06T4 pinout, STD10PF06T4 application, or STD10PF06T4 equivalent, key selection criteria include verified P-channel polarity, TO-252 thermal performance (R_thj-case = 3.75 °C/W), unclamped inductive switching capability, and diode recovery parameters (t_rr = 100 ns, Q_rr = 260 µC) under 150 °C junction conditions.

Technical Context

This device employs ST's StripFET™ II process with single-feature-size strip geometry to achieve high cell density and low on-resistance. Its P-channel topology enables high-side switching without level-shifting circuitry, and its 175 °C maximum junction temperature supports operation in thermally constrained industrial environments.

The MOSFET integrates an intrinsic body diode with characterized reverse recovery (I_RRM = 5.2 A, t_rr = 100 ns), and its 125 mJ single-pulse avalanche energy rating (E_AS) confirms reliability under transient overvoltage events in inductive load circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum drain-source blocking voltage before avalanche onset; defines safe operating range in 48 V bus applications.
R_DS(on)	0.18 Ω (typ.) at V_GS = −10 V - Directly determines conduction loss (P_cond ≈ I_D² × R_DS(on)) in high-current paths.
I_D (cont)	10 A at T_C = 25 °C - Continuous current rating under heatsink-cooled conditions; derates to 7 A at 100 °C case temperature.
Q_g	16 nC - Total gate charge required for full turn-on; sets minimum driver strength and switching loss in PWM operation.
t_rr	100 ns - Body diode reverse recovery time at T_j = 150 °C; critical for minimizing shoot-through risk in synchronous buck topologies.
E_AS	125 mJ - Single-pulse avalanche energy rating; validates survivability during unclamped inductive switching transients.

Pinout & Package

STD10PF06T4 uses the surface-mount DPAK (TO-252) package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad provides low thermal resistance (R_thj-case = 3.75 °C/W) and serves as the primary heat path to the PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts −10 V to −20 V gate drive for full enhancement; threshold voltage V_GS(th) = 2–4 V (P-channel polarity).
2 (Drain)	High-side current return path	Connected to exposed metal tab; electrically and thermally coupled to PCB ground plane for efficient heat dissipation.
3 (Source)	Reference node for gate drive and load return	Serves as common connection point for load and gate driver reference; defines V_GS bias relative to load ground.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against inductive switching surges without derating; eliminates need for external snubbers in motor drive H-bridges.
Low R_DS(on) (0.18 Ω typ.)	Reduces conduction losses by >30% vs. comparable 60 V P-MOSFETs, improving efficiency in 12–48 V DC-DC output stages.
6 V/ns dv/dt immunity	Prevents false turn-on during fast voltage transients in high-noise industrial environments, enhancing system reliability.
StripFET™ II process	Delivers consistent parametric spread (±10% R_DS(on)) across production lots, simplifying thermal margining in volume designs.

Applications

Brushless DC Motor Control

Industrial DC-DC Converters

Use Scenario: High-side switch in 3-phase BLDC inverter half-bridge, driving 24 V/5 A fan modules in HVAC systems.

IC Role / Device Role / Timing Role: P-channel high-side MOSFET providing synchronous rectification and regenerative braking via controlled source-drain conduction.

Use Value: Low R_DS(on) minimizes I²R heating during 100% duty-cycle braking; avalanche rating handles back-EMF spikes up to 60 V.

Use Scenario: Input-side high-side switch in non-isolated buck converter powering PLC I/O modules from 48 V rail.

IC Role / Device Role / Timing Role: Primary switching element controlling energy transfer into output inductor; operates at 200 kHz with 50 ns dead-time.

Use Value: 16 nC Q_g enables use of low-power gate drivers (e.g., STGW30V60DF); 100 ns t_rr prevents cross-conduction during synchronous rectification.

Automotive Body Control

Power Over Ethernet (PoE) Injectors

Use Scenario: Load switch for 12 V lighting circuits in automotive door modules, requiring reverse-battery protection.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement, blocking reverse current while conducting forward load current.

Use Value: Intrinsic body diode forward voltage (V_SD = 2.5 V) is lower than Schottky alternatives at 10 A, reducing power loss in always-on lighting loads.

Use Scenario: Secondary-side high-side switch in 48 V PoE injector delivering up to 90 W to IEEE 802.3bt Type 4 PDs.

IC Role / Device Role / Timing Role: Hot-swap FET limiting inrush current during PD insertion; withstands repeated 60 V clamp events per IEEE 802.3af/bt stress tests.

Use Value: 125 mJ E_AS rating exceeds IEEE 802.3bt surge requirement (100 mJ), eliminating need for external TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPBF	R_DS(on) = 0.2 Ω (typ.), higher Q_g = 22 nC, same TO-220 package	Through-hole mounting only; lacks DPAK thermal performance (R_thj-case = 3.75 °C/W vs. 6.5 °C/W)	Choose only if board layout requires through-hole assembly and thermal budget allows +1.5 W conduction loss at 10 A.
DMG2305UVT-7	R_DS(on) = 0.045 Ω (typ.), but V_DSS = 20 V only; SOT-23 package	Not suitable for 48 V systems; limited to ≤3 A continuous due to package thermal limits	Select only for low-voltage, low-current (<5 V, <2 A) logic-level switching where footprint is critical.

Compared with IRF9540NPBF and DMG2305UVT-7, STD10PF06T4 uniquely balances 60 V rating, DPAK thermal efficiency, and 10 A capability-making it optimal for space-constrained 24–48 V industrial switching where both voltage headroom and thermal management matter.

Availability

STD10PF06T4 is available at Aetrix Electronics and suitable for motor control, industrial DC-DC converters, and automotive body electronics requiring stable component supply and long-term manufacturability.

Supply support for STD10PF06T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD10PF06T4 belongs to ST's Power MOSFET product line, engineered specifically for high-reliability, high-efficiency switching in 12–60 V industrial and automotive power systems.

FAQ

What is the maximum gate-source voltage rating for STD10PF06T4?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable enhancement, apply −10 V to −15 V during conduction; avoid prolonged exposure to −20 V unless specified in transient test conditions. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching.

Can STD10PF06T4 be used in synchronous rectification configurations?

Yes-its intrinsic body diode has characterized reverse recovery (t_rr = 100 ns, Q_rr = 260 µC at 150 °C), enabling use in synchronous buck secondaries. However, external synchronous gate control is required since the device lacks integrated driver logic. Ensure gate drive timing accounts for t_rr to prevent shoot-through.

What is the thermal resistance from junction to case (R_thj-case) for STD10PF06T4?

R_thj-case is 3.75 °C/W, measured with the drain tab soldered to a 1-inch² 2-oz copper pad on FR-4 PCB. This value assumes full thermal contact between the exposed drain pad and PCB copper; incomplete solder coverage increases effective thermal resistance by up to 40%.

Does STD10PF06T4 require a gate resistor for stability?

A series gate resistor (typically 4.7 Ω) is recommended to dampen ringing caused by gate loop inductance and Miller capacitance. Data sheet switching tests (td(on), tr, td(off), tf) were performed with RG = 4.7 Ω. Lower values increase dv/dt stress; higher values slow switching and raise dynamic losses.

STD10PF06T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 850 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD10PF06T4 FAQ

1.How can I place an order for STD10PF06T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD10PF06T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD10PF06T4 reliable?

The price and inventory of STD10PF06T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD10PF06T4 is usually 5 days.

3.What payment methods are accepted for STD10PF06T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD10PF06T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD10PF06T4?

STD10PF06T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD10PF06T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD10PF06T4?

For technical support, including STD10PF06T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD10PF06T4 requirements.

6.How does Aetrix verify that STD10PF06T4 is sourced from the original manufacturer or authorized distributors?

All STD10PF06T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD10PF06T4 meets industry standards.

7.What is the process for return or replacement of STD10PF06T4?

All STD10PF06T4 units undergo pre-shipment inspection (PSI). If there is an issue with STD10PF06T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD10PF06T4 part is unused and in its original packaging.

Return procedure for STD10PF06T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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