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STMicroelectronics STD13N60M6

Name: STD13N60M6
Brand: STMicroelectronics
SKU: STD13N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD13N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD13N60M6.pdf

Description:: MOSFET N-CH 600V 10A DPAK

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Product details

Overview

STD13N60M6 from STMicroelectronics is a 600 V, 10 A N-channel MDmesh M6 superjunction power MOSFET in DPAK (TO-252) package, featuring 320 mΩ typical R_DS(on), 13 nC total gate charge, and 140 mJ single-pulse avalanche energy-designed for high-efficiency LLC and boost PFC converters.

For engineers reviewing the STD13N60M6 datasheet, STD13N60M6 pinout, STD13N60M6 application, or STD13N60M6 equivalent, key selection criteria include switching loss optimization, Zener-protected gate robustness, 100% avalanche testing, and thermal resistance of 1.36 °C/W junction-to-case.

Technical Context

This MOSFET employs ST's MDmesh M6 technology to achieve improved R_DS(on)/area ratio versus prior MDmesh generations while maintaining high dv/dt ruggedness (100 V/ns) and low gate input resistance (5.6 Ω). Its Zener-protected gate structure enhances ESD immunity and system reliability under transient stress.

The device integrates a fast-recovery body diode with 182 ns reverse recovery time (T_j = 25 °C) and 1.35 µC Q_rr, enabling efficient hard-switching operation in resonant topologies. Safe operating area (SOA) is characterized up to 10 ms at T_C = 25 °C with R_DS(on)-limited conduction.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in universal-input offline SMPS up to 400 V DC bus.
R_DS(on) max	380 mΩ - ensures ≤3.8 W conduction loss at 10 A ID, critical for thermal management in compact PFC stages.
Q_g	13 nC - enables fast turn-on/off with moderate gate drive strength, reducing switching losses in 100–500 kHz LLC designs.
E_AS	140 mJ - provides margin against unclamped inductive switching events without external snubbers.
R_thj-case	1.36 °C/W - allows 92 W dissipation at ΔT = 125 °C, supporting high-power density with minimal heatsinking.
dv/dt ruggedness	100 V/ns - sustains reliable operation during fast voltage transients in high-frequency resonant converters.
I_D (T_C = 100 °C)	6.4 A - defines usable continuous current in thermally constrained industrial enclosures.

Pinout & Package

DPAK (TO-252) package with exposed drain tab (Pin 2) for enhanced thermal conduction and mechanical mounting. Standard 3-lead surface-mount outline per IEC 60747-16, compatible with automated reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Low-impedance control terminal requiring ≤±25 V bias; 5.6 Ω intrinsic resistance minimizes gate ringing.
2 (D, TAB)	Drain (exposed metal tab)	Main high-voltage power path; tab soldered to PCB copper pour for thermal and electrical connection to DC bus.
3 (S)	Source	Reference node for gate drive and current sensing; ties to low-side switch node or ground return path.

Key Features

Feature	Design Value
MDmesh M6 silicon technology	320 mΩ typ. R_DS(on) at 10 A - delivers 18% lower on-resistance per die area than MDmesh M5, improving power density.
100% avalanche tested	Guarantees minimum 140 mJ E_AS - eliminates need for design margining against single-event inductive spikes.
Zener-protected gate	±25 V V_GS rating with integrated clamp - prevents gate oxide failure during hot-plug or layout-induced transients.
Low C_oss eq.	94 pF - reduces capacitive switching loss and improves light-load efficiency in resonant LLC topologies.
Fast body diode	182 ns t_rr, 1.35 µC Q_rr - enables zero-voltage switching (ZVS) in half-bridge configurations without external diodes.

Applications

LLC Resonant Converter

Boost PFC Stage

Use Scenario: Primary-side switch in 300–600 W server PSU LLC half-bridge with 300 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side and low-side synchronous switch managing resonant tank current and voltage inversion.

Use Value: 13 nC Q_g and 100 V/ns dv/dt ruggedness enable stable ZVS across line/load variations without added gate drive complexity.

Use Scenario: Active switch in continuous-conduction-mode (CCM) boost PFC front-end for industrial motor drives.

IC Role / Device Role / Timing Role: Main power switch controlling inductor current ramp/decay to shape input current waveform.

Use Value: 380 mΩ R_DS(on) max and 92 W P_TOT support >96% efficiency at full load with minimal heatsink volume.

Industrial AC-DC Adapter

Telecom Rectifier Module

Use Scenario: Primary switch in 150 W enclosed AC-DC adapter with strict thermal envelope and no forced airflow.

IC Role / Device Role / Timing Role: Power transistor handling 600 V DC link voltage and conducting peak currents up to 28 A pulsed.

Use Value: 1.36 °C/W R_thj-case and 6.4 A I_D @ 100 °C allow full-rated operation at 70 °C ambient without derating.

Use Scenario: Switch in 48 V telecom rectifier module operating in harsh environments with wide temperature range.

IC Role / Device Role / Timing Role: High-reliability power switch subjected to repeated lightning surge and load dump transients.

Use Value: 100% avalanche testing and Zener-protected gate ensure field failure rate <1 FIT over 10-year service life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP13N60M6	TO-220 package, identical silicon die and electrical specs; R_thj-case = 1.05 °C/W vs 1.36 °C/W.	Better thermal performance but larger footprint; requires through-hole assembly and heatsink mounting.	Select when board space permits and higher power dissipation (>100 W) is required without thermal interface limitations.
IPP60R190C7	Infineon CoolMOS C7: 190 mΩ R_DS(on), 15 nC Q_g, 650 V rating; no integrated Zener protection.	Lower conduction loss but higher gate charge and no gate clamping-requires external gate protection circuitry.	Select when optimizing for ultra-high efficiency at light loads and gate drive design includes discrete Zener clamping.

Compared with STP13N60M6, STD13N60M6 trades 0.31 °C/W higher thermal resistance for surface-mount compatibility and reduced assembly cost; versus IPP60R190C7, it offers proven gate robustness at the expense of 50 mΩ higher R_DS(on) and 2 nC lower Q_g.

Availability

STD13N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, boost PFC stages, and industrial AC-DC adapters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STD13N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD13N60M6 belongs to the MDmesh M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies where low switching loss and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD13N60M6 supports 6.4 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS13028. This value reflects thermal derating due to junction-to-case thermal resistance (1.36 °C/W) and maximum junction temperature limit (150 °C), ensuring safe operation in convection-cooled industrial enclosures.

Does this MOSFET include integrated gate protection?

Yes, the STD13N60M6 features an integrated Zener diode between gate and source, enabling ±25 V absolute maximum gate-source voltage rating. This protection prevents gate oxide breakdown during ESD events or gate driver overshoot, eliminating the need for external gate clamping components in most designs.

Can STD13N60M6 be used in zero-voltage switching (ZVS) topologies?

Yes-its 182 ns body diode reverse recovery time (t_rr) and 1.35 µC Q_rr at 25 °C, combined with low C_oss eq. (94 pF), support reliable ZVS in LLC resonant converters. The device's 100 V/ns dv/dt ruggedness further ensures stability during the resonant transition phase.

What is the recommended PCB footprint for thermal performance?

The datasheet specifies a recommended DPAK (TO-252) footprint with ≥1-inch² FR-4 copper area (2 oz) connected directly to the exposed drain tab (Pin 2). This layout achieves the rated R_thj-pcb = 50 °C/W and supports 92 W total power dissipation at T_C = 25 °C, per Table 2 in DS13028.

STD13N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 509 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

STD13N60M6 FAQ

1.How can I place an order for STD13N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD13N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD13N60M6 reliable?

The price and inventory of STD13N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD13N60M6 is usually 5 days.

3.What payment methods are accepted for STD13N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD13N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD13N60M6?

STD13N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD13N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD13N60M6?

For technical support, including STD13N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD13N60M6 requirements.

6.How does Aetrix verify that STD13N60M6 is sourced from the original manufacturer or authorized distributors?

All STD13N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD13N60M6 meets industry standards.

7.What is the process for return or replacement of STD13N60M6?

All STD13N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STD13N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD13N60M6 part is unused and in its original packaging.

Return procedure for STD13N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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