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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD170N4F7AG

Name: STD170N4F7AG
Brand: STMicroelectronics
SKU: STD170N4F7AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD170N4F7AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD170N4F7AG.pdf

Description:: MOSFET N-CHANNEL 40V 80A DPAK

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Product details

Overview

STD170N4F7AG from STMicroelectronics is an automotive-grade N-channel 40 V, 2.2 mΩ typ. R_DS(on), 80 A continuous drain current Power MOSFET in DPAK (TO-252) package, designed for high-efficiency switching in motor control and DC-DC conversion. It features AEC-Q101 qualification, 460 mJ single-pulse avalanche energy, and low Crss/Ciss ratio for EMI immunity.

For engineers reviewing the STD170N4F7AG datasheet, STD170N4F7AG pinout, STD170N4F7AG application, or STD170N4F7AG equivalent, key selection criteria include R_DS(on) at 10 V gate drive, thermal resistance (0.87 °C/W j-case), gate charge (63 nC), and SOA robustness under pulsed load conditions.

Technical Context

This device employs STripFET™ F7 trench-gate technology to achieve ultra-low on-resistance while minimizing C_iss (4350 pF) and Crss (80 pF). Its optimized capacitance ratio improves EMI performance in high-frequency switching converters.

The MOSFET supports 80 A continuous current at T_case = 25 °C with 172 W total power dissipation, and maintains stable V_GS(th) (2–4 V) and R_DS(on) across -55 to 175 °C junction temperature range, enabling reliable operation in automotive under-hood environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive systems
R_DS(on) max	2.8 mΩ - Ensures <1.8 W conduction loss at 80 A, critical for thermal management
I_D cont	80 A - Continuous current rating limited by DPAK package thermal capability
E_AS	460 mJ - Avalanche ruggedness enables unclamped inductive switching without failure
Q_g	63 nC - Gate charge value determines driver strength requirement for 100 kHz+ switching
C_rss/C_iss	80/4350 pF - Low ratio reduces Miller effect, improving noise immunity and turn-off stability
R_thj-case	0.87 °C/W - Enables direct heatsink mounting for high-power density PCB layouts

Pinout & Package

STD170N4F7AG is housed in a surface-mount DPAK (TO-252) package with exposed drain pad for thermal and electrical connection. The package complies with ECOPACK® environmental standards and is qualified per AEC-Q101.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main power output terminal / heat sink interface	Connected to large copper area for thermal dissipation and low-inductance high-current path
G (Gate)	Control input	Receives 10 V logic-level drive; requires <63 nC charge for full enhancement
S (Source)	Reference node / return path	Provides common reference for gate drive and current sensing; tied to PCB ground plane

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood use including temperature cycling, humidity, and mechanical shock
Low R_DS(on) × Q_g FoM	~177 mΩ·nC - Balances conduction and switching losses for high-efficiency SMPS designs
High avalanche energy (E_AS)	460 mJ - Supports robust operation during load dump or inductive kickback events
Optimized Crss/Ciss ratio	1.8% - Reduces dv/dt-induced false turn-on and improves EMI margin in noisy environments

Applications

Electric Power Steering (EPS)

Automotive DC-DC Converters

Use Scenario: High-current H-bridge motor driver for 12 V EPS systems requiring bidirectional torque control and fault tolerance.

IC Role / Device Role / Timing Role: Main switching element in half-bridge configuration, handling up to 80 A peak motor current with fast 35 ns turn-on delay.

Use Value: Low R_DS(on) minimizes I²R heating during sustained assist, while 460 mJ E_AS withstands regenerative braking spikes.

Use Scenario: Primary-side synchronous rectifier in 12 V → 5 V/3.3 V buck converter for ADAS camera modules.

IC Role / Device Role / Timing Role: High-side switch operating at 300–500 kHz with precise gate timing enabled by low Q_g and stable V_GS(th).

Use Value: 63 nC Q_g allows efficient driving with low-power gate drivers; 0.87 °C/W R_thj-case sustains >92% efficiency at full load.

Body Control Modules (BCM)

Start-Stop Battery Management

Use Scenario: Load switch for high-power lighting (headlamps, fog lamps) with overcurrent and thermal protection.

IC Role / Device Role / Timing Role: Single-N-channel high-side switch controlled via microcontroller GPIO with external pull-up.

Use Value: 2.8 mΩ R_DS(on) limits voltage drop to <220 mV at 80 A, preserving lamp brightness and reducing thermal derating.

Use Scenario: Isolation switch between starter battery and auxiliary Li-ion buffer in engine start-stop systems.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch supporting charge/discharge paths with reverse diode conduction.

Use Value: Integrated body diode with 1.2 V V_SD and 50 ns t_rr enables efficient freewheeling during transient load dumps without external Schottky.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 4.0 mΩ max @ 10 V; Q_g = 71 nC; non-AEC-Q101	Lacks automotive qualification; higher conduction loss increases thermal stress in BCM modules	Acceptable for industrial non-automotive 40 V switching where qualification is not required
STL110N4F7AG	Same F7 technology, but DFN5x6 package; R_DS(on) = 2.5 mΩ max; lower I_D = 60 A	Smaller footprint, lower thermal mass; unsuitable for 80 A continuous loads due to package limitation	Preferred for space-constrained, lower-current automotive modules needing same process benefits

Compared with IRL1404ZPBF, STD170N4F7AG delivers 30% lower R_DS(on) and AEC-Q101 compliance for mission-critical automotive use; versus STL110N4F7AG, it trades package size for 33% higher current capacity and superior thermal dissipation via DPAK's exposed drain pad.

Availability

STD170N4F7AG is available at Aetrix Electronics and suitable for Electric Power Steering (EPS), automotive DC-DC converters, Body Control Modules (BCM), and start-stop battery management systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for STD170N4F7AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

STD170N4F7AG belongs to ST's STripFET™ F7 Power MOSFET product line, engineered specifically for high-current, high-reliability automotive power switching with emphasis on low R_DS(on), robust avalanche capability, and AEC-Q101 compliance.

FAQ

Is STD170N4F7AG suitable for 48 V mild-hybrid systems?

No. Its 40 V V_DS rating provides only 10% margin above nominal 36 V battery systems and is insufficient for 48 V architectures where transients exceed 60 V. Use 75 V or 100 V rated MOSFETs such as STW75N60DM6 for 48 V applications.

What is the maximum PCB copper area recommended for thermal performance?

For optimal R_thj-pcb of 50 °C/W, ST recommends a minimum 1-inch² (645 mm²) FR-4 board with 2 oz copper connected directly to the exposed drain pad. Larger copper areas further reduce thermal resistance but yield diminishing returns beyond 2.5-inch².

Does the integrated body diode support synchronous rectification?

Yes - the source-drain diode has 1.2 V forward voltage at 80 A and 50 ns reverse recovery time, enabling use in freewheeling paths. However, its Q_rr (51 nC) and I_RRM (2.0 A) limit effectiveness in high-frequency synchronous rectification; external Schottky or GaN devices are preferred above 1 MHz.

Can STD170N4F7AG be paralleled for higher current?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Figure 10) ensures inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical layout, and shared thermal coupling to avoid thermal runaway; ST recommends ≤3 devices in parallel for 80 A per unit.

STD170N4F7AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 172W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD170N4F7AG FAQ

1.How can I place an order for STD170N4F7AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STD170N4F7AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD170N4F7AG reliable?

The price and inventory of STD170N4F7AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD170N4F7AG is usually 5 days.

3.What payment methods are accepted for STD170N4F7AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD170N4F7AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD170N4F7AG?

STD170N4F7AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD170N4F7AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD170N4F7AG?

For technical support, including STD170N4F7AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD170N4F7AG requirements.

6.How does Aetrix verify that STD170N4F7AG is sourced from the original manufacturer or authorized distributors?

All STD170N4F7AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD170N4F7AG meets industry standards.

7.What is the process for return or replacement of STD170N4F7AG?

All STD170N4F7AG units undergo pre-shipment inspection (PSI). If there is an issue with STD170N4F7AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD170N4F7AG part is unused and in its original packaging.

Return procedure for STD170N4F7AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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