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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD27N3LH5

Name: STD27N3LH5
Brand: STMicroelectronics
SKU: STD27N3LH5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD27N3LH5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD27N3LH5.pdf

Description:: MOSFET N-CH 30V 27A DPAK

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Product details

Overview

STD27N3LH5 from STMicroelectronics is an N-channel 30 V, 27 A Power MOSFET in DPAK (TO-252) package, featuring 0.019 Ω R_DS(on) at V_GS = 10 V and 13.5 A, 4.6 nC total gate charge, and 50 mJ single-pulse avalanche energy - optimized for high-efficiency DC-DC converters and motor control switches in industrial power supplies.

For engineers reviewing the STD27N3LH5 datasheet, STD27N3LH5 pinout, STD27N3LH5 application, or STD27N3LH5 equivalent, key selection criteria include low conduction loss at 13.5 A, fast switching with 4 ns turn-on delay and 2.8 ns fall time, thermal resistance of 5 °C/W (junction-to-case), and rugged unclamped inductive switching capability.

Technical Context

This STripFET™ V MOSFET employs trench-gate technology to achieve industry-leading R_DS(on) × Q_g figure of merit. Its gate threshold voltage (1–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while the integrated source-drain diode supports synchronous rectification with 16.2 ns reverse recovery time and 7.8 nC Q_rr.

The device operates across –55 °C to 175 °C junction temperature range, with 30 W total dissipation at T_C = 25 °C and derating factor of 0.2 W/°C. Safe operating area (SOA) is validated up to 108 A pulsed drain current under 100 µs pulse width, limited by R_DS(on) at T_J = 175 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage in off-state; suitable for 24 V nominal bus systems with margin.
R_DS(on) max	0.019 Ω @ V_GS = 10 V, I_D = 13.5 A - Enables <1.7 W conduction loss at 13.5 A, reducing heatsink requirements.
Q_g	4.6 nC - Low gate drive energy minimizes driver IC power loss and enables >1 MHz switching in hard-switched topologies.
E_AS	50 mJ - Confirmed single-pulse avalanche ruggedness supports reliable operation during inductive load transients.
t_f	2.8 ns @ V_DD = 15 V, I_D = 13.5 A, R_G = 4.7 Ω - Fast fall time reduces switching losses in high-frequency SMPS designs.
R_thJC	5 °C/W - Junction-to-case thermal resistance allows direct mounting to heatsink for 30 W continuous dissipation.
I_D cont	27 A @ T_C = 25 °C - Rated continuous current supports high-current load switching without derating at ambient case temperature.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration with standard G-S-D terminal assignment.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–10 V logic-level drive; 2.5 Ω gate input resistance limits ringing.
2 (D / TAB)	Drain (exposed pad)	Main high-side current path; electrically and thermally connected to PCB copper pour for heat dissipation.
3 (S)	Source	Reference node for gate drive and current sensing; ties to power ground or low-side switch node.

Key Features

Feature	Design Value
STripFET™ V trench architecture	Delivers best-in-class R_DS(on) × Q_g FOM for reduced conduction + switching loss trade-off.
Low gate charge (Q_g = 4.6 nC)	Reduces gate driver power consumption and enables use of smaller, lower-cost driver ICs.
High avalanche ruggedness (E_AS = 50 mJ)	Eliminates need for external snubbers in relay driving and solenoid control applications.
Logic-level gate threshold (V_GS(th) = 1–2.5 V)	Ensures full enhancement with 3.3 V microcontroller GPIO without level-shifting circuitry.
Optimized body diode (t_rr = 16.2 ns, Q_rr = 7.8 nC)	Minimizes reverse recovery loss in synchronous buck and half-bridge configurations.

Applications

Industrial DC-DC Converters

Brushed DC Motor Control

Use Scenario: Primary-side switch in isolated 24 V input, 5–12 V output flyback or forward converters.

IC Role / Device Role: High-side power switch handling 13.5 A peak primary current at 300–500 kHz.

Use Value: 0.019 Ω R_DS(on) limits conduction loss to ≤3.5 W at full load, enabling compact heatsink-free design.

Use Scenario: H-bridge low-side switch for 24 V brushed DC motors in factory automation actuators.

IC Role / Device Role: Synchronous rectifier and PWM-controlled current path with bidirectional freewheeling.

Use Value: 16.2 ns t_rr and low Q_rr reduce shoot-through risk and improve efficiency at 20 kHz PWM frequency.

LED Constant-Current Drivers

Power ORing Circuits

Use Scenario: High-side current regulator for multi-string 24 V LED lighting systems with analog dimming.

IC Role / Device Role: Linear or PWM-controlled pass element maintaining precise LED current up to 27 A.

Use Value: 175 °C max junction temperature and 5 °C/W R_thJC support stable operation under sustained thermal stress.

Use Scenario: Ideal diode replacement in redundant 24 V power supply inputs for PLC backplanes.

IC Role / Device Role: Low-loss reverse-polarity and fault-isolation switch with fast turn-off (<13 ns td(off)).

Use Value: 0.019 Ω on-resistance cuts forward voltage drop to <510 mV at 27 A, outperforming Schottky diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP27N3LH5	TO-220 package; R_DS(on) = 0.020 Ω; R_thJC = 3.33 °C/W; higher thermal mass.	Better suited for through-hole prototyping and higher-power heatsinked designs requiring >30 W dissipation.	Select when mechanical robustness and manual assembly outweigh surface-mount density requirements.
STD28N3LH5	Same DPAK package; R_DS(on) = 0.014 Ω; Q_g = 5.1 nC; 30 V rating unchanged.	Offers lower conduction loss but slightly higher gate drive demand; requires re-optimization of gate resistor.	Choose for ultra-low-loss 12–24 V systems where <1.5 W conduction loss is critical and gate drive capability permits.

Compared with STP27N3LH5, STD27N3LH5 provides superior board space efficiency and thermal interface simplicity; versus STD28N3LH5, it trades 0.005 Ω higher R_DS(on) for 0.5 nC lower Q_g, easing gate driver selection in cost-sensitive 200–500 kHz designs.

Availability

STD27N3LH5 is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushed DC motor controllers, and LED constant-current drivers requiring stable component supply and long-term production continuity.

Supply support for STD27N3LH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power management applications.

STD27N3LH5 belongs to the STripFET™ V Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 24 V industrial power systems with emphasis on low R_DS(on) × Q_g optimization.

FAQ

What is the maximum continuous drain current for STD27N3LH5 at 100 °C case temperature?

The maximum continuous drain current is 19 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating from 27 A at 25 °C reflects thermal limitations of the DPAK package and ensures safe operation within its 5 °C/W junction-to-case thermal resistance.

Can STD27N3LH5 be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage ranges from 1 V to 2.5 V, and it achieves full enhancement with V_GS ≥ 4.5 V. At 3.3 V drive, R_DS(on) rises to 0.027 Ω (typ.), still supporting ≤27 A pulsed operation; for continuous 27 A, 10 V drive is recommended per datasheet test conditions.

Does STD27N3LH5 have built-in ESD protection on the gate?

No - the datasheet does not specify integrated gate ESD protection. External Zener clamping (e.g., 15 V TVS between gate and source) is recommended for board-level ESD immunity, especially in automated handling or high-static environments.

What is the safe operating area (SOA) limitation at 100 µs pulse width and 175 °C junction temperature?

At 100 µs pulse width and T_J = 175 °C, the SOA is limited by R_DS(on) to approximately 21 A at 10 V V_DS, per Figure 4. This reflects the device's intrinsic on-resistance boundary, not packaging or bond-wire limits, and applies to unclamped inductive switching events.

STD27N3LH5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ V

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 4.6 nC @ 5 V

Vgs (Max):: ±22V

Input Capacitance (Ciss) (Max) @ Vds:: 475 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD27N3LH5 FAQ

1.How can I place an order for STD27N3LH5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD27N3LH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD27N3LH5 reliable?

The price and inventory of STD27N3LH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD27N3LH5 is usually 5 days.

3.What payment methods are accepted for STD27N3LH5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD27N3LH5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD27N3LH5?

STD27N3LH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD27N3LH5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD27N3LH5?

For technical support, including STD27N3LH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD27N3LH5 requirements.

6.How does Aetrix verify that STD27N3LH5 is sourced from the original manufacturer or authorized distributors?

All STD27N3LH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD27N3LH5 meets industry standards.

7.What is the process for return or replacement of STD27N3LH5?

All STD27N3LH5 units undergo pre-shipment inspection (PSI). If there is an issue with STD27N3LH5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD27N3LH5 part is unused and in its original packaging.

Return procedure for STD27N3LH5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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