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STMicroelectronics STD2NM60T4

Part No.:
STD2NM60T4
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSTD2NM60T4.pdf
Description:
MOSFET N-CH 600V 2A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,456

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Product details

Overview

STD2NM60T4 from STMicroelectronics is a Zener-protected N-channel 600 V, 2.8 Ω (typ), 2 A MDmesh™ Power MOSFET in DPAK (TO-252) package. It delivers high dv/dt immunity (15 V/ns), 100% unclamped avalanche tested performance (EAS = 250 mJ), and integrated gate-source Zener protection (±30 V rating). It is used in offline SMPS primary-side switching stages requiring robustness against voltage transients and fast diode recovery.

For engineers reviewing the STD2NM60T4 datasheet, STD2NM60T4 pinout, STD2NM60T4 application, or STD2NM60T4 equivalent, key selection criteria include its 600 V VDSS, 2.8 Ω RDS(on) at VGS = 10 V, 1.5 V VSD body diode forward voltage, 6 nC total gate charge, and DPAK thermal resistance (Rthj-case = 2.73 °C/W).

Technical Context

This MOSFET employs ST's MDmesh™ technology-combining Multiple Drain process with PowerMESH™ horizontal layout-to achieve low on-resistance while maintaining high voltage capability and superior dynamic performance. Its built-in back-to-back gate-source Zener diodes (BVGSO = 30 V) eliminate need for external clamping components.

The device is characterized for hard-switched, inductive-load applications with strict safe operating area (SOA) compliance up to Tj = 150 °C. Key dynamic parameters include tr = 8 ns, tf = 25 ns, and trr = 516 ns (Tj = 25 °C) for its intrinsic source-drain diode under di/dt = 100 A/µs conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS600 V - supports universal-input offline converters without derating
RDS(on)2.8 Ω (typ) at VGS = 10 V - enables low conduction loss in 2 A continuous drain applications
ID (cont)2 A at TC = 25 °C - defines maximum steady-state current with heatsink
EAS250 mJ - quantifies single-pulse avalanche energy handling without failure
Qg6 nC - determines gate drive power requirement and switching speed trade-off
VSD1.5 V at ISD = 2 A - sets forward conduction loss during synchronous rectification or freewheeling
dv/dt Rating15 V/ns - ensures reliable operation in high-slew-rate flyback and resonant topologies

Pinout & Package

STD2NM60T4 is housed in a surface-mount DPAK (TO-252) package with exposed drain pad for thermal enhancement. The package has three terminals: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the tab for low-inductance heat sinking.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control inputReceives 10 V logic-level signal to fully enhance channel; protected by integrated Zener diode
2 (Source)Reference nodeServes as return path for load current and gate drive loop; tied to power ground in most topologies
3 (Drain)High-voltage outputConnected to primary winding of transformer or bulk DC rail; tab is electrically common with this terminal

Key Features

FeatureDesign Value
Zener-protected gateIntegrated ±30 V gate-source Zener diodes eliminate need for external TVS and reduce BOM count
100% avalanche testedEach unit passes unclamped inductive switching test (EAS = 250 mJ), ensuring ruggedness in real-world overvoltage events
Low Ciss/Crss160 pF input capacitance and only 4 pF reverse transfer capacitance enable stable high-frequency operation with minimal Miller effect
Enhanced diode recoverytrr = 516 ns (25 °C) and Qrr = 516 nC support efficient snubberless operation in discontinuous conduction mode (DCM) flyback
Tight RDS(on) distributionGuaranteed < 3.2 Ω max ensures consistent conduction loss across production lots for predictable thermal design

Applications

Offline AC-DC AdaptersIndustrial SMPS

Use Scenario: 36 W universal-input (90–264 VAC) flyback converter powering IoT gateway control board.

IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer during ON-time; operates at 65 kHz with DCM.

Use Value: Low Qg (6 nC) and tight RDS(on) tolerance reduce gate drive loss and improve efficiency by 0.8% at full load vs. legacy 5 Ω MOSFETs.

Use Scenario: 120 W industrial auxiliary supply with reinforced isolation and wide ambient temperature range (−40 to +85 °C).

IC Role / Device Role / Timing Role: Main switch in quasi-resonant (QR) flyback stage; handles 600 V reflected voltage spikes during demagnetization.

Use Value: 15 V/ns dv/dt rating and 100% avalanche testing ensure no failure during line surges or transformer saturation events.

LED Driver Power StagesUPS Hold-up Circuits

Use Scenario: Constant-current LED driver for street lighting using primary-side regulation with analog dimming.

IC Role / Device Role / Timing Role: High-voltage switch in buck-boost PFC front-end; conducts 2 A average current with 100% duty cycle capability at light load.

Use Value: Integrated Zener protection prevents gate oxide damage during hot-plug or ESD events in field-deployed outdoor units.

Use Scenario: 24 V backup supply in telecom shelf with 20 ms hold-up time after AC loss.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter; leverages low VSD (1.5 V) for reduced conduction loss.

Use Value: Body diode's low Qrr (516 nC) minimizes reverse recovery loss during zero-voltage switching transitions, improving thermal margin by 12 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP2NK60Z600 V, 3.3 Ω RDS(on), 2 A, TO-220 package, no integrated ZenerRequires external gate protection; higher conduction loss increases junction temperature by ~8 °C at 2 APreferred where through-hole mounting and cost sensitivity outweigh Zener integration benefits
FQP2N60600 V, 3.6 Ω RDS(on), 2 A, TO-220, no avalanche rating or ZenerLacks EAS specification and gate protection; not recommended for unclamped inductive loadsSuitable only for low-risk, low-di/dt applications with conservative SOA derating

Compared with STP2NK60Z and FQP2N60, STD2NM60T4 provides lower RDS(on), guaranteed avalanche ruggedness, and integrated gate protection-enabling smaller heatsinks, fewer external components, and higher reliability in compact, high-density offline power supplies.

Availability

STD2NM60T4 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial SMPS, LED driver power stages, and UPS hold-up circuits requiring stable component supply and long-term manufacturability.

Supply support for STD2NM60T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

STD2NM60T4 belongs to the MDmesh™ family-designed specifically for high-efficiency, high-power-density offline converters where low RDS(on), fast switching, and rugged avalanche performance are critical.

FAQ

Is STD2NM60T4 suitable for use in zero-voltage switching (ZVS) topologies?

Yes. With low Coss (67 pF) and Crss (4 pF), STD2NM60T4 enables efficient ZVS operation in LLC resonant converters. Its 600 V rating and 15 V/ns dv/dt capability allow reliable turn-on under high dV/dt conditions typical in resonant tank waveforms, and its body diode trr (516 ns) supports clean commutation without excessive ringing.

What is the maximum allowable gate resistor value for reliable switching at 100 kHz?

For 100 kHz operation with 10 V gate drive, a gate resistor ≤ 10 Ω is recommended. With Qg = 6 nC and typical driver output impedance < 2 Ω, RG = 10 Ω yields td(on) ≈ 15 ns and tr ≈ 10 ns-well within safe SOA limits. Higher values increase switching loss and risk shoot-through in half-bridge configurations.

Does the "T4" suffix indicate tape-and-reel packaging only, or does it affect electrical specs?

The "T4" suffix denotes tape-and-reel packaging (2500 pcs/reel) per JEDEC standard J-STD-020. It has no impact on electrical or thermal specifications-STD2NM60T4 shares identical absolute maximum ratings, dynamic parameters, and thermal resistance (Rthj-case = 2.73 °C/W) with tube-packaged STD2NM60.

Can STD2NM60T4 replace STD2NM60-1 in existing designs?

Yes-STD2NM60T4 and STD2NM60-1 share identical electrical characteristics, pinout, and package (DPAK). The "-1" variant is tube-packaged; "T4" is tape-and-reel. Both meet the same AEC-Q101 stress test requirements and have identical RDS(on), EAS, and dv/dt ratings-making them functionally interchangeable in layout and schematic.

STD2NM60T4 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.2Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.4 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
160 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
46W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

STD2NM60T4 FAQ

1.How can I place an order for STD2NM60T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD2NM60T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD2NM60T4 reliable?

The price and inventory of STD2NM60T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD2NM60T4 is usually 5 days.

3.What payment methods are accepted for STD2NM60T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD2NM60T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD2NM60T4?

STD2NM60T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD2NM60T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD2NM60T4?

For technical support, including STD2NM60T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD2NM60T4 requirements.

6.How does Aetrix verify that STD2NM60T4 is sourced from the original manufacturer or authorized distributors?

All STD2NM60T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD2NM60T4 meets industry standards.

7.What is the process for return or replacement of STD2NM60T4?

All STD2NM60T4 units undergo pre-shipment inspection (PSI). If there is an issue with STD2NM60T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD2NM60T4 part is unused and in its original packaging.

Return procedure for STD2NM60T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STD2NM60T4 Tags

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