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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD30NE06L

Name: STD30NE06L
Brand: STMicroelectronics
SKU: STD30NE06L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD30NE06L

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD30NE06L.pdf

Description:: MOSFET N-CH 60V 30A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD30NE06L from STMicroelectronics is an N-channel enhancement-mode power MOSFET in TO-252 (DPAK) package, rated for 60 V V_DS, 30 A continuous drain current at T_C = 25 °C, and typ. R_DS(on) = 0.025 Ω at V_GS = 10 V. It delivers high-speed switching with 7 V/ns dv/dt capability and is 100% avalanche tested-used in DC-DC converters and motor control stages where ruggedness and low conduction loss are critical.

For engineers reviewing the STD30NE06L datasheet, STD30NE06L pinout, STD30NE06L application, or STD30NE06L equivalent, key selection criteria include its 175 °C max junction temperature, 31 nC total gate charge, 2370 pF input capacitance, avalanche energy rating of 100 mJ, and DPAK thermal resistance (R_thj-pcb = 2.72 °C/W), all essential for thermal-aware high-current layout design.

Technical Context

This device employs ST's "Single Feature Size" strip-based process to achieve high cell density and low R_DS(on), enabling efficient high-current operation while maintaining robust unclamped inductive switching performance. Its gate threshold voltage (1.0–2.5 V) supports direct 5 V logic-level drive, and the integrated body diode features 55 ns reverse recovery time with 0.1 µC Q_rr at 150 °C junction temperature.

The MOSFET is characterized for high dv/dt immunity (7 V/ns) and operates within a safe operating area defined up to 120 A pulsed drain current. Thermal design leverages its low R_thj-pcb (2.72 °C/W) and 1.5 °C/W case-to-sink resistance when mounted on copper pour, supporting compact PCB-level thermal management without external heatsinks in medium-power applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before breakdown; defines use in ≤48 V bus systems with margin.
R_DS(on) (typ)	0.025 Ω @ V_GS = 10 V - Enables <1.1 W conduction loss at 30 A, reducing thermal load in high-current paths.
I_D (cont)	30 A @ T_C = 25 °C - Sustains full-rated current with adequate heatsinking; derates to 21 A at 100 °C case.
Q_g	31 nC - Determines gate driver power requirement; enables fast switching with moderate gate resistance (e.g., 4.7 Ω).
E_AS	100 mJ - Single-pulse avalanche energy rating ensures reliability during inductive turn-off transients without snubbers.
dv/dt	7 V/ns - High immunity to parasitic turn-on in noisy environments, critical for half-bridge and H-bridge topologies.
C_iss	2370 pF - Input capacitance impacts gate drive loop stability and switching speed; requires careful gate resistor selection.

Pinout & Package

Package: TO-252 (DPAK), surface-mount, single-drain tab configuration with exposed drain pad for thermal and electrical connection to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Accepts 0–20 V gate drive; threshold at 1.7 V typical; low input capacitance enables fast edge rates.
2 (Source)	Reference node for gate drive and current return	Connected to power ground plane; low-inductance routing required to minimize switching noise and shoot-through risk.
3 (Drain)	Main current output path	Exposed metal tab tied internally to drain; must be soldered to large copper area for thermal dissipation and low EMI path.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against inductive energy spikes without derating; eliminates need for external clamping in solenoid drivers.
Low R_DS(on) (0.025 Ω typ)	Reduces I²R losses by >30% vs. comparable 60 V MOSFETs, directly improving efficiency in 12–48 V DC-DC stages.
High dv/dt immunity (7 V/ns)	Prevents false triggering in high-noise motor control and relay drive circuits, enhancing system reliability without added gate filtering.
Optimized for 5 V logic drive	Operates fully enhanced at V_GS = 5 V (R_DS(on) ≤ 0.030 Ω), enabling direct interface with microcontroller GPIOs or low-voltage gate drivers.
TO-252 thermal performance	R_thj-pcb = 2.72 °C/W allows 20+ W dissipation on 2 oz. copper with 10 cm² thermal pad-no heatsink needed in many industrial modules.

Applications

Motor Control Stage

DC-DC Converter Primary Switch

Use Scenario: Half-bridge driver for brushed DC motors in industrial actuators and HVAC dampers.

IC Role / Device Role / Timing Role: High-side/low-side power switch handling 20–30 A peak currents with PWM frequencies up to 100 kHz.

Use Value: Low R_DS(on) and 100 mJ E_AS prevent failure during stall conditions and commutation spikes, extending field lifetime.

Use Scenario: Synchronous rectifier or primary-side switch in isolated 24 V input, 5–12 V output flyback or forward converters.

IC Role / Device Role / Timing Role: Main power switch operating in hard-switched or quasi-resonant mode with 30–100 kHz switching frequency.

Use Value: 7 V/ns dv/dt rating suppresses false turn-on during transformer leakage spikes, improving regulation stability and EMI compliance.

Solenoid & Relay Driver

Audio Amplifier Output Stage

Use Scenario: Direct-drive interface between MCU and 24 V/1.5 A solenoids in fluid control valves and pneumatic systems.

IC Role / Device Role / Timing Role: Single-ended switch with freewheeling diode conduction during de-energization.

Use Value: Fast 55 ns t_rr and low Q_rr (0.1 µC) minimize voltage overshoot and reduce snubber size, cutting BOM cost and board space.

Use Scenario: Class-D output stage in mid-power audio amplifiers (20–50 W) for public address and automotive infotainment.

IC Role / Device Role / Timing Role: High-current, low-distortion output switch operating at ≥300 kHz carrier frequency.

Use Value: Low C_iss (2370 pF) and balanced C_oss/C_rss ratio ensure clean zero-voltage switching transitions, lowering THD+N and EMI emissions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 0.028 Ω (typ), Q_g = 67 nC, no avalanche rating specified	Lacks guaranteed avalanche ruggedness; requires external clamping in inductive loads	Choose only if avalanche stress is absent and gate drive strength permits higher Q_g.
STP30NF06L	Same die family, TO-220 package, R_thj-amb = 62 °C/W vs. 100 °C/W for DPAK	Requires heatsink for >10 W dissipation; less suitable for space-constrained PCBs	Select when mechanical mounting flexibility outweighs thermal PCB integration needs.

Compared with IRFZ44NPBF and STP30NF06L, STD30NE06L uniquely combines DPAK-mountable thermal efficiency (R_thj-pcb = 2.72 °C/W), guaranteed 100 mJ avalanche energy, and 5 V logic compatibility-making it optimal for compact, rugged, high-reliability industrial power stages.

Availability

STD30NE06L is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, solenoid driving, and audio amplifier output stages requiring stable component supply across long-lifecycle industrial programs.

Supply support for STD30NE06L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

STD30NE06L belongs to ST's StripFET™ II power MOSFET product line, engineered specifically for high-efficiency, high-ruggedness switching in industrial power supplies, motor drives, and automotive body electronics.

FAQ

Is STD30NE06L suitable for 5 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.0–2.5 V and full enhancement at V_GS = 5 V (R_DS(on) ≤ 0.030 Ω), it interfaces directly with standard 5 V GPIOs. No level-shifting circuitry is required, simplifying drive-stage design and reducing component count in cost-sensitive applications.

What is the maximum continuous power dissipation at 100 °C case temperature?

At T_C = 100 °C, the device supports 21 A continuous drain current. Using R_DS(on) = 0.028 Ω (max), conduction loss is ~12.3 W. With R_thj-pcb = 2.72 °C/W and T_j(max) = 175 °C, the achievable steady-state power is ~27 W on a well-designed 2 oz. copper thermal pad-well above the 12.3 W loss.

Does STD30NE06L include an integrated body diode? What are its recovery characteristics?

Yes, it integrates a fast, low-loss body diode with t_rr = 55 ns, Q_rr = 0.1 µC, and I_RRM = 3.5 A at T_j = 150 °C. These parameters enable efficient freewheeling in synchronous rectification and half-bridge configurations without external Schottky diodes in many medium-frequency designs.

Can STD30NE06L replace older ST power MOSFETs like STD20NE06L in existing designs?

Yes-STD30NE06L is a direct upgrade: same TO-252 package, identical pinout, higher current rating (30 A vs. 20 A), lower R_DS(on) (0.025 Ω vs. 0.035 Ω), and improved avalanche rating (100 mJ vs. 65 mJ). Layout and drive circuitry remain unchanged, delivering immediate efficiency and ruggedness gains.

STD30NE06L Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 28mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2370 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 55W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD30NE06L FAQ

1.How can I place an order for STD30NE06L through Aetrix?

Please submit a Request for Quotation (RFQ) for STD30NE06L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD30NE06L reliable?

The price and inventory of STD30NE06L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD30NE06L is usually 5 days.

3.What payment methods are accepted for STD30NE06L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD30NE06L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD30NE06L?

STD30NE06L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD30NE06L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD30NE06L?

For technical support, including STD30NE06L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD30NE06L requirements.

6.How does Aetrix verify that STD30NE06L is sourced from the original manufacturer or authorized distributors?

All STD30NE06L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD30NE06L meets industry standards.

7.What is the process for return or replacement of STD30NE06L?

All STD30NE06L units undergo pre-shipment inspection (PSI). If there is an issue with STD30NE06L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD30NE06L part is unused and in its original packaging.

Return procedure for STD30NE06L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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