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STMicroelectronics STD30NE06LT4

Part No.:
STD30NE06LT4
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSTD30NE06LT4.pdf
Description:
MOSFET N-CH 60V 30A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,108

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Product details

Overview

STD30NE06LT4 from STMicroelectronics is an N-channel 60 V, 30 A DPAK (TO-252) Power MOSFET with RDS(on) = 0.025 Ω at VGS = 10 V, 100% avalanche tested, and optimized for high-speed switching in motor control and DC-DC converters.

For engineers reviewing the STD30NE06LT4 datasheet, STD30NE06LT4 pinout, STD30NE06LT4 application, or STD30NE06LT4 equivalent, key selection criteria include its 7 V/ns dv/dt capability, low gate charge (31 nC), rugged unclamped inductive switching performance, and thermal resistance Rthj-pcb = 2.72 °C/W.

Technical Context

This MOSFET employs ST's "Single Feature Size" strip-based process to achieve high cell density and low on-resistance while maintaining robust avalanche energy handling (EAS = 100 mJ). Its gate threshold voltage (1.0–2.5 V) enables compatibility with 5 V logic-level drive.

The device features a fast body diode with trr = 55 ns and Qrr = 0.1 µC under specified inductive conditions, supporting efficient synchronous rectification and flyback recovery in hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - supports 48 V bus systems with margin against transients
RDS(on)0.025 Ω @ VGS = 10 V - delivers ≤11.25 W conduction loss at 30 A continuous
ID (Tc = 100°C)21 A - defines usable current in thermally constrained PCB layouts
Qg31 nC - determines gate driver power requirement and switching speed trade-off
EAS100 mJ - enables reliable operation in unclamped inductive switching without snubbers
dv/dt7 V/ns - suppresses false turn-on during high-slew-rate commutation
Rthj-pcb2.72 °C/W - sets junction-to-PCB temperature rise under 55 W dissipation

Pinout & Package

Package: DPAK (TO-252), surface-mount, single-drain tab configuration with exposed drain pad for thermal and electrical connection.

Pin/TerminalCircuit RoleDesign Meaning
1 (Source)Source terminalCommon return path for load current; connects to ground or low-side reference
2 (Gate)Control inputHigh-impedance MOSFET gate requiring <31 nC charge for full enhancement
3 (Drain)Power outputExposed metal tab - electrically and thermally connected to drain; must be isolated from other nets

Key Features

FeatureDesign Value
100% avalanche testedGuarantees robustness under unclamped inductive switching up to IAR = 30 A and EAS = 100 mJ
Low gate charge (Qg = 31 nC)Reduces driver losses and enables >100 kHz switching with standard gate drivers
Exceptional dv/dt immunity (7 V/ns)Prevents spurious turn-on during fast voltage transitions in half-bridge configurations
Application-oriented characterizationTested under real-world conditions including inductive loads, diode recovery, and SOA limits

Applications

Motor ControlDC-DC Converters

Use Scenario: Brushed DC motor H-bridge half-bridge leg in industrial actuators.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling bidirectional current flow and PWM duty cycle.

Use Value: Low RDS(on) minimizes I²R heating at 30 A peak; avalanche rating handles back-EMF spikes without external clamping.

Use Scenario: Synchronous rectifier in 48 V input, 12 V output buck converter for telecom power supplies.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to reduce conduction loss.

Use Value: Fast body diode (trr = 55 ns) and low Qrr (0.1 µC) limit reverse recovery loss and EMI generation.

Solenoid DriversAudio Amplifiers

Use Scenario: High-current solenoid actuation in automotive door locks and valve control modules.

IC Role / Device Role / Timing Role: Single-ended switch driving inductive load with controlled turn-off to manage flyback energy.

Use Value: 100% avalanche-tested design absorbs stored inductive energy without failure during rapid de-energization.

Use Scenario: Output stage in Class-D audio amplifier delivering ≥50 W into 4 Ω loads.

IC Role / Device Role / Timing Role: High-efficiency power switch modulating audio signal via PWM at >300 kHz carrier frequency.

Use Value: Low gate charge and fast switching (tr = 100 ns, tf = 45 ns) preserve signal fidelity and minimize dead-time distortion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFZ44NPBFRDS(on) = 0.028 Ω @ VGS = 10 V; Qg = 67 nC; no avalanche rating specifiedLacks guaranteed avalanche performance; higher gate drive power requiredPrefer when cost sensitivity outweighs need for unclamped inductive reliability
STP30NF06LSame RDS(on) spec (0.025 Ω), but TO-220 package; higher Rthj-amb (62 °C/W vs 100 °C/W for DPAK)Requires heatsink for >10 A continuous; not suitable for space-constrained SMT designsChoose only if through-hole mounting and higher thermal mass are acceptable

Compared with IRFZ44NPBF and STP30NF06L, STD30NE06LT4 uniquely combines DPAK surface-mount form factor, 100% avalanche testing, and low gate charge-making it optimal for compact, high-reliability, high-frequency switching in motor and power supply designs.

Availability

STD30NE06LT4 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, solenoid drivers, and Class-D audio amplifiers requiring stable component supply and long-term industrial availability.

Supply support for STD30NE06LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices.

This part belongs to ST's StripFET™ II family of trench-gate MOSFETs, engineered specifically for high-efficiency, high-reliability power switching in industrial and automotive-grade applications.

FAQ

Is STD30NE06LT4 logic-level compatible?

Yes - its gate threshold voltage range (1.0–2.5 V) and low RDS(on) at VGS = 5 V (0.030 Ω max) enable direct drive from 5 V microcontrollers or gate drivers without level-shifting. Full enhancement occurs at 10 V, but usable switching begins well below that.

What is the maximum safe operating area (SOA) limitation at 100°C case temperature?

At Tc = 100°C, the continuous drain current is derated to 21 A. The pulsed current limit remains 120 A, but pulse width is constrained by SOA boundaries - specifically, VDS × ID must stay below the curve defined in Figure 7 of the datasheet to avoid second breakdown.

Can STD30NE06LT4 replace STD30NE06L in existing designs?

Yes - the "T4" suffix denotes tape-and-reel packaging only; all electrical, thermal, and mechanical specifications are identical to STD30NE06L. No layout or schematic changes are needed when migrating to the T4 variant for automated assembly.

Does the body diode support synchronous rectification in buck converters?

Yes - with trr = 55 ns, Qrr = 0.1 µC, and VSD = 1.5 V at 30 A, the intrinsic diode performs comparably to discrete Schottky diodes in medium-frequency (<500 kHz) buck topologies, reducing conduction loss while avoiding external diode cost and footprint.

STD30NE06LT4 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
28mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2370 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
55W (Tc)
Operating Temperature:
175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

STD30NE06LT4 FAQ

1.How can I place an order for STD30NE06LT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD30NE06LT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD30NE06LT4 reliable?

The price and inventory of STD30NE06LT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD30NE06LT4 is usually 5 days.

3.What payment methods are accepted for STD30NE06LT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD30NE06LT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD30NE06LT4?

STD30NE06LT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD30NE06LT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD30NE06LT4?

For technical support, including STD30NE06LT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD30NE06LT4 requirements.

6.How does Aetrix verify that STD30NE06LT4 is sourced from the original manufacturer or authorized distributors?

All STD30NE06LT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD30NE06LT4 meets industry standards.

7.What is the process for return or replacement of STD30NE06LT4?

All STD30NE06LT4 units undergo pre-shipment inspection (PSI). If there is an issue with STD30NE06LT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD30NE06LT4 part is unused and in its original packaging.

Return procedure for STD30NE06LT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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