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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD30NF03LT4

Name: STD30NF03LT4
Brand: STMicroelectronics
SKU: STD30NF03LT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD30NF03LT4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD30NF03LT4.pdf

Description:: MOSFET N-CH 30V 30A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD30NF03LT4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in DPAK package, rated for 30V V_DS, 30A continuous drain current at T_C = 25°C, and 0.020Ω typical R_DS(on) at V_GS = 10V. It features rugged avalanche capability (100 mJ single-pulse E_AS), low gate charge (18 nC), and optimized for high-efficiency DC-DC converters and motor control switches.

For engineers reviewing the STD30NF03LT4 datasheet, STD30NF03LT4 pinout, STD30NF03LT4 application, or STD30NF03LT4 equivalent, key selection criteria include its 0.020Ω on-resistance at 10V drive, 120A pulsed drain rating, thermal resistance junction-to-PCB (3.0°C/W), and DPAK footprint compatibility with automated SMT assembly.

Technical Context

This STripFET™ II device uses a strip-based "Single Feature Size™" process to achieve high cell density and low conduction loss while maintaining robust safe operating area (SOA) and unclamped inductive switching (UIS) performance. Its gate threshold voltage (1.0–2.5V) enables direct logic-level drive from 3.3V/5V microcontrollers.

The MOSFET integrates a fast, low-Q_rr body diode (72 nC reverse recovery charge, 65 ns t_rr) suitable for synchronous rectification and freewheeling in buck converters and half-bridge topologies. Dynamic parameters-including 830 pF C_iss, 92 pF C_rss, and 205 ns rise time-are characterized at V_DS = 15V, I_D = 20A, R_G = 4.7Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage in switching applications; defines upper limit for input rail in 24V industrial systems.
R_DS(on) (typ)	0.020 Ω @ V_GS = 10V - Enables ≤6W conduction loss at 30A, critical for thermally constrained PCB layouts.
I_D (cont)	30 A @ T_C = 25°C - Continuous current rating assuming heatsinked case; derates to 19A at 100°C case temperature.
E_AS	100 mJ - Single-pulse avalanche energy at T_j = 25°C; supports reliable operation under inductive load turn-off stress.
Q_g	18 nC - Total gate charge at V_GS = 5V; determines driver power requirement and switching speed in high-frequency SMPS.
R_thj-pcb	3.0 °C/W - Junction-to-PCB thermal resistance with standard 1-in² copper pour; enables ~16.7°C/W effective θ_JA in typical 4-layer board layout.
t_r/t_f	205 ns / 240 ns - Rise/fall times under 15V V_DD, 20A I_D, 4.7Ω gate resistor; sets minimum practical switching frequency for <1% switching loss.

Pinout & Package

DPAK (TO-252) package: surface-mount, 3-terminal, single-die power MOSFET with exposed drain pad for thermal and electrical connection to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives gate drive signal; requires <2.5V threshold to initiate conduction; sensitive to ESD (±20V max V_GS).
2 (Source)	Reference node for gate drive and current return path	Connected to power ground or low-side switch node; carries full load current and influences gate drive loop inductance.
3 (Drain)	Main power output terminal	Connected to high-side of load or input rail; electrically and thermally tied to exposed metal tab (pin 3 = drain = thermal pad).

Key Features

Feature	Design Value
STripFET™ II process	Enables 0.020Ω R_DS(on) in DPAK without requiring external heatsink in 15W dissipation scenarios.
Rugged avalanche rating	100 mJ E_AS allows operation in unclamped inductive switching without snubbers in motor gate drivers.
Low gate charge	18 nC Q_g reduces gate driver power loss and enables >500 kHz PWM in DC-DC controllers with minimal overshoot.
Fast body diode	65 ns t_rr and 72 nC Q_rr minimize reverse recovery losses in synchronous buck and flyback topologies.
ECOPACK® compliance	Lead-free second-level interconnect and RoHS-compliant packaging meet industrial environmental requirements.

Applications

DC-DC Converter Switch

Motor Control Half-Bridge

Use Scenario: High-current step-down regulator in industrial PLC power supply delivering 12V/20A from 24V input.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300 kHz with 10V gate drive.

Use Value: 0.020Ω R_DS(on) limits conduction loss to 8W at 20A, enabling compact thermal design without forced air cooling.

Use Scenario: Upper-leg switch in brushed DC motor H-bridge driving 18A stall current at 24V.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven by bootstrap gate driver with 5V logic interface.

Use Value: 120A pulsed ID rating and 100 mJ E_AS withstand motor back-EMF transients during rapid direction reversal.

LED Driver Switch

Power OR-ing Circuit

Use Scenario: Constant-current LED string driver for architectural lighting with 30A peak current pulses.

IC Role / Device Role / Timing Role: PWM-controlled main current switch modulating 30A at 1 kHz with minimal dead-time distortion.

Use Value: Fast 205 ns rise time ensures precise current pulse fidelity; low Q_g minimizes gate driver loading at high duty cycles.

Use Scenario: Redundant 24V power input selector in telecom shelf with automatic failover between two supplies.

IC Role / Device Role / Timing Role: Low-loss forward path switch replacing Schottky diodes in ideal diode configuration.

Use Value: 0.020Ω R_DS(on) cuts forward voltage drop to <0.6V at 30A-reducing heat generation by >75% vs. 0.4V Schottky.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PbF	R_DS(on) = 0.008Ω (lower), but larger TO-220 package; Q_g = 71 nC (higher); no specified E_AS.	Requires through-hole assembly and larger board area; higher gate drive power needed for same switching speed.	Prefer when ultra-low R_DS(on) justifies manual assembly and thermal mass; avoid where space or gate drive efficiency is constrained.
STP30NF03L	Same die, TO-220 package; identical R_DS(on), Q_g, and E_AS; higher R_thj-amb (62°C/W vs. 100°C/W for DPAK).	Through-hole mounting only; less suitable for high-density SMT designs; slower thermal response due to higher junction-to-ambient resistance.	Select for prototyping or legacy through-hole systems; STD30NF03LT4 preferred for production SMT volume and thermal performance per unit area.

Compared with IRF3205PbF and STP30NF03L, STD30NF03LT4 delivers optimal balance of low R_DS(on), moderate Q_g, proven avalanche ruggedness, and DPAK manufacturability-making it the preferred choice for cost-sensitive, high-volume SMT power stages where thermal density and gate drive efficiency matter.

Availability

STD30NF03LT4 is available at Aetrix Electronics and suitable for DC-DC converters, motor control half-bridges, and LED driver switches requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.

Supply support for STD30NF03LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and consumer markets.

STD30NF03LT4 belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for high-current, medium-voltage switching in space-constrained industrial power supplies and motor drives.

FAQ

What is the maximum gate-source voltage rating for STD30NF03LT4?

The absolute maximum V_GS is ±20 V, as specified in Table 1 of the datasheet. Exceeding this rating-even transiently-can cause irreversible gate oxide damage. For reliable operation, gate drive should be clamped to ≤±15 V, especially in noisy industrial environments with inductive coupling.

Can STD30NF03LT4 be used in a high-side switch configuration with 5V logic-level drive?

Yes: its gate threshold voltage range (1.0–2.5 V) and low R_DS(on) (0.028 Ω typ at V_GS = 4.5 V) allow full enhancement with 5V logic. However, a bootstrap or charge-pump gate driver is required for high-side use to maintain V_GS > 4.5 V when source rises above ground.

What is the recommended PCB layout for thermal performance?

Mount the DPAK device directly over ≥1 in² of 2-oz copper connected to the drain pad via ≥6 thermal vias (0.3 mm diameter, filled or plated). Keep gate and source traces short and wide to minimize L_GS and reduce ringing. Avoid routing high dv/dt nodes near sensitive analog traces.

Does STD30NF03LT4 have built-in ESD protection?

No: it lacks integrated gate protection diodes. The gate oxide is susceptible to ESD damage-HBM rating is not specified in the datasheet. Always use grounded wrist straps, ESD-safe workstations, and series gate resistors (≥10 Ω) during handling and testing to prevent static discharge.

STD30NF03LT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 830 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -65°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD30NF03LT4 FAQ

1.How can I place an order for STD30NF03LT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD30NF03LT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD30NF03LT4 reliable?

The price and inventory of STD30NF03LT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD30NF03LT4 is usually 5 days.

3.What payment methods are accepted for STD30NF03LT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD30NF03LT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD30NF03LT4?

STD30NF03LT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD30NF03LT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD30NF03LT4?

For technical support, including STD30NF03LT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD30NF03LT4 requirements.

6.How does Aetrix verify that STD30NF03LT4 is sourced from the original manufacturer or authorized distributors?

All STD30NF03LT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD30NF03LT4 meets industry standards.

7.What is the process for return or replacement of STD30NF03LT4?

All STD30NF03LT4 units undergo pre-shipment inspection (PSI). If there is an issue with STD30NF03LT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD30NF03LT4 part is unused and in its original packaging.

Return procedure for STD30NF03LT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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