STMicroelectronics STD37P3H6AG
- Part No.:
- STD37P3H6AG
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD37P3H6AG.pdf
- Description:
- MOSFET P-CH 30V 49A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:3,778
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Product details
Overview
STD37P3H6AG from STMicroelectronics is an AEC-Q101-qualified P-channel automotive Power MOSFET in DPAK (TO-252) package, rated for -30 V VDS, 11 mΩ typ. RDS(on) at -10 V VGS, -49 A continuous drain current, and 60 W total power dissipation. It serves as a high-efficiency high-side load switch in 12 V automotive power distribution systems.
For engineers reviewing the STD37P3H6AG datasheet, STD37P3H6AG pinout, STD37P3H6AG application, or STD37P3H6AG equivalent, key selection criteria include its low gate charge (30.6 nC), high avalanche energy rating (750 mJ), thermal resistance junction-to-case (2.5 °C/W), and reverse recovery performance (25.3 ns trr) in inductive switching.
Technical Context
This P-channel MOSFET employs ST's STripFET™ H6 trench-gate technology to achieve ultra-low on-resistance and minimized gate drive losses. Its negative threshold voltage (-2 to -4 V) enables direct logic-level control from standard automotive microcontrollers without level-shifting.
The device features integrated source-drain diode with 19.2 nC Qrr and -1.3 V forward voltage at -40 A, supporting synchronous rectification and flyback energy recovery in DC-DC converters and motor drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - supports full 12 V automotive battery transient tolerance (e.g., load dump up to +40 V, reverse polarity down to -30 V) |
| RDS(on) max | 15 mΩ @ VGS = -10 V - limits conduction loss to ≤ 36.8 W at -49 A, enabling compact thermal design |
| Qg | 30.6 nC - reduces gate driver power consumption and switching transition time in high-frequency PWM |
| EAS | 750 mJ - withstands single-pulse inductive energy without failure in relay or solenoid drive circuits |
| trr | 25.3 ns - minimizes switching losses and EMI during turn-off in buck or half-bridge topologies |
| Rthj-case | 2.5 °C/W - allows 24 W continuous power dissipation at 100 °C case temperature with minimal heatsinking |
| IDM | -196 A pulsed - handles short-circuit currents in overcurrent protection schemes with SOA compliance |
Pinout & Package
STD37P3H6AG is housed in a DPAK (TO-252) surface-mount package with exposed drain tab for thermal and electrical connection. The package conforms to JEDEC MO-231, variant A2, and uses tape-and-reel packing (2500 pcs/reel).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Pin 1) | Gate | Controls channel conduction; requires -10 V for full enhancement; gate leakage ≤ 100 nA at -20 V |
| S (Pin 3) | Source | Reference node for gate drive; connects to system ground or high-side rail return path |
| D (Pin 2, Tab) | Drain | Main current path terminal; electrically and thermally connected to exposed copper tab for PCB heat spreading |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood operation across -40 °C to +175 °C junction temperature range |
| Very low RDS(on) | 11 mΩ typ. at -10 V ensures ≤ 27 W conduction loss at 40 A, reducing thermal stress in space-constrained modules |
| Low gate charge | 30.6 nC total charge enables fast switching with low-power gate drivers (e.g., STM32 GPIO or TC1412N) |
| High avalanche ruggedness | 750 mJ single-pulse rating protects against inductive kickback in motor control and solenoid actuation |
| Optimized body diode | 25.3 ns trr and 19.2 nC Qrr support efficient freewheeling in synchronous buck and H-bridge configurations |
Applications
| Automotive Body Control Module (BCM) | 12 V Automotive DC-DC Converter |
|---|---|
Use Scenario: High-side switching of lighting loads (headlamps, fog lamps) with short-circuit and overtemperature protection. IC Role / Device Role / Timing Role: P-channel MOSFET used as protected high-side switch with integrated diagnostics via current sensing. Use Value: 11 mΩ RDS(on) reduces voltage drop to < 0.5 V at 45 A, preserving lamp brightness and minimizing thermal derating. | Use Scenario: Synchronous rectifier in secondary-side of isolated 12 V–5 V/3.3 V buck converter for infotainment power supply. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to improve efficiency at light-to-moderate loads. Use Value: 25.3 ns trr prevents cross-conduction losses and enables >92% efficiency at 2 A output with 500 kHz switching. |
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Control |
Use Scenario: Low-side driver for peak-current-limited fuel injector solenoids with fast turn-off for precise pulse-width modulation. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with external gate driver for controlled inductive turn-off. Use Value: 750 mJ EAS absorbs flyback energy during 12 V–60 V inductive transients, eliminating need for external snubbers. | Use Scenario: PWM-controlled high-side switch for 12 V blower motor with soft-start and stall detection. IC Role / Device Role / Timing Role: Main power switch in half-bridge motor driver IC auxiliary stage or discrete H-bridge implementation. Use Value: -49 A continuous rating supports 300 W motor loads; 2.5 °C/W Rthj-case enables operation at 100 °C ambient without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PbF | RDS(on) = 20 mΩ @ -10 V; Qg = 110 nC; not AEC-Q101 qualified | Lacks automotive qualification; higher gate drive loss; lower avalanche rating (450 mJ) | Acceptable for non-automotive industrial use where qualification is not required |
| IPB80P03P4L-04 | RDS(on) = 3.8 mΩ @ -10 V; larger D²PAK package; AEC-Q101 qualified | Lower RDS(on) but higher cost and footprint; requires more PCB area and thermal management | Preferred when < 10 mΩ RDS(on) is mandatory and board space permits larger package |
Compared with IRF4905PbF and IPB80P03P4L-04, STD37P3H6AG delivers optimal balance of automotive qualification, thermal efficiency (2.5 °C/W), and compact DPAK footprint-making it ideal for space-constrained BCM and ECU designs where 11–15 mΩ RDS(on) suffices.
Availability
STD37P3H6AG is available at Aetrix Electronics and suitable for automotive body control modules, engine control units, and 12 V DC-DC power supplies requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.
Supply support for STD37P3H6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
STD37P3H6AG belongs to ST's STripFET™ H6 automotive power MOSFET product line, engineered specifically for high-reliability 12 V vehicle networks demanding low RDS(on), robust avalanche capability, and extended temperature operation.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STD37P3H6AG supports -34.5 A continuous drain current at TCASE = 100 °C, as specified in Table 2 of the datasheet. This derating accounts for thermal limitations and ensures safe operation within the SOA boundary when mounted on a standard FR-4 PCB with adequate copper area.
Does this MOSFET require a gate driver for automotive microcontroller interfacing?
Yes - while its gate threshold voltage (-2 to -4 V) allows basic turn-on with 3.3 V or 5 V logic, full enhancement (RDS(on) ≤ 15 mΩ) requires -10 V VGS. An automotive-grade gate driver (e.g., STGW30V60DF, L9369) is recommended to ensure fast, robust switching and prevent partial turn-on during transients.
Can STD37P3H6AG be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) (confirmed in Figure 10) enables stable current sharing. However, layout symmetry, matched gate drive impedance, and individual current sensing are required to avoid thermal runaway. Derate total current by 15% per additional device beyond two.
Is the exposed drain tab electrically isolated from the PCB mounting pad?
No - the DPAK drain tab (Pin 2) is internally connected to the MOSFET's drain and must be soldered directly to a large copper pour serving as both thermal sink and circuit node. Electrical isolation requires insulating thermal interface materials and careful layout to avoid shorting to adjacent ground or signal planes.
STD37P3H6AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ H6
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30.6 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1630 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 60W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD37P3H6AG FAQ
1.How can I place an order for STD37P3H6AG through Aetrix?
Please submit a Request for Quotation (RFQ) for STD37P3H6AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD37P3H6AG reliable?
The price and inventory of STD37P3H6AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD37P3H6AG is usually 5 days.
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4.How is shipping managed for STD37P3H6AG?
STD37P3H6AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD37P3H6AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD37P3H6AG?
For technical support, including STD37P3H6AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD37P3H6AG requirements.
6.How does Aetrix verify that STD37P3H6AG is sourced from the original manufacturer or authorized distributors?
All STD37P3H6AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD37P3H6AG meets industry standards.
7.What is the process for return or replacement of STD37P3H6AG?
All STD37P3H6AG units undergo pre-shipment inspection (PSI). If there is an issue with STD37P3H6AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD37P3H6AG part is unused and in its original packaging.
Return procedure for STD37P3H6AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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